SPICE MODEL of TPC6003 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPC6003
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

3. Transconductance Characteristic
Circuit Simulation Result
Comparison table
VGS(V)
ID(A) Error (%)
Measurement Simulation
1.000 8.333 8.606 3.276
2.000 11.764 11.749 -0.129
4.000 16.000 15.835 -1.031
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

4. Vgs-Id Characteristic
Circuit Simulation result
12A
11A
10A
9A
8A
7A
6A
5A
4A
3A
2A
1A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
TPC6003
V2
V1 10Vdc
4.5Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1.000 2.200 2.194 -0.259
2.000 2.300 2.294 -0.243
5.000 2.490 2.503 0.538
10.000 2.730 2.755 0.923
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Id-Rds(on) Characteristic
Circuit Simulation result
3.0A
2.0A
1.0A
0A
0V 50mV 100mV 200mV 300mV 400mV 500mV
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
TPC6003
V2
V1 10Vdc
4.5Vdc
0
Simulation Result
ID=3, VGS=4.5V Measurement Simulation Error (%)
R DS (on) 25.00 m 25.00 m 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. Gate Charge Characteristic
Circuit Simulation result
25.0V
22.5V
20.0V
17.5V
15.0V
12.5V VDD=6V
10.0V VDD=12V
7.5V
5.0V VDD=24V
2.5V
0V
0 4n 8n 12n 16n 20n 24n 28n 32n 36n 40n
V(W1:2)
Time*50ms
Evaluation circuit
V2
0V dc
U2 5
Db reak
D1
I2
PE R = 10 00 u
PW = 6 00 u TP C6 003 6A dc
TF = 10 n W1
TR = 10 n +
TD = 0 V1
I2 = 5 0m
- 24 Vd c
I1 W
I1 = 0 IOFF = 50 m
ION = 0 uA
0
Simulation Result
VDD=24V,ID=6A Measurement Simulation Error (%)
,VGS=5V
Qgs 3.70 nC 3.70 nC 0.000
Qgd 6.32 nC 6.30 nC -0.316
Qg 24.00 nC 24.15 nC 0.625
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.100 22.000 22.075 0.341
0.200 17.000 16.900 -0.588
0.500 7.700 7.620 -1.039
1.000 2.200 2.170 -1.364
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

9. Switching Time Characteristic
Circuit Simulation result
12V
VDS = 15V VGS = 10V
8V
4V
0V
4.95us 5.00us 5.05us 5.10us
V(2) V(3)/1.5
Time
Evaluation circuit
V3 3
0Vdc
L1
30nH
U26
R1 L2 RL
2
5
4.7 30nH
V1 = 0 TPC6003
V1
V2 = 20 VDD
TD = 5u R2
TR = 6n 15
TF = 6n 4.7
PW = 5u
PER = 10u
0 0 0 0
Simulation Result
ID=3A, VDD=15V
Measurement Simulation Error(%)
VGS=0/5V
td (on) 11.000 ns 11.014 ns 0.127
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

10. Output Characteristic
Circuit Simulation result
6,8,10V
4V
10A
3V 2.6V
9A
8A
2.7V
7A
6A
2.6V
5A
4A
2.5V
3A
VGS=2.4V
2A
1A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V
I(V3)
V_V2
Evaluation circuit
V3
0V dc
TP C6 003
V2
V1 10 Vd c
4.5 Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

11. Forward Current Characteristic
Circuit Simulation Result
20A
10A
1.0A
200mA
-0.2V -0.4V -0.6V -0.8V -1.0V -1.2V
I(V2)
V_V3
Evaluation Circuit
R1
0Vdc
0.01m
V2
V3
0Vdc TPC6003
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

12. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.200 -0.610 -0.610 -0.052
0.500 -0.650 -0.652 0.328
1.000 -0.690 -0.688 -0.329
2.000 -0.730 -0.730 -0.045
5.000 -0.805 -0.807 0.203
10.000 -0.900 -0.900 -0.041
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
0A
-400mA
15.54us 15.58us 15.62us 15.66us 15.70us 15.74us
I(R1)
Time
Evaluation circuit
R1
50
V1 = {-9.7} V1
V2 = {10.6}
TD = 0.576u
TR = 10n
TF = 10n
PW = 15u
PER = 100u
0 0
Compare Measurement vs. Simulation
Measurement Simulation Error(%)
trj 8.800 ns 8.802 ns 0.023
trb 39.200 ns 39.091 ns -0.278
trr 48.000 ns 47.893 ns -0.223
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

14. Reverse Recovery Characteristic Reference
Measurement
trj=8.8(ns)
trb=39.2(ns)
Conditions:Ifwd=Irev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

15. Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(V2)
V_V3
Evaluation Circuit
R1
0.01m
OPEN
OPEN
V2
0Vdc
V3
U26
TPC6003
0Vdc
OPEN
OPEN
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005