SPICE MODEL of TPCA8015-H (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: TPCA8015-H
MANUFACTURER: TOSHIBA
Body Diode (Model Parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
1.000 23.000 23.274 1.191
2.000 30.000 31.004 3.347
5.000 45.000 45.471 1.047
10.00 60.000 59.683 -0.528
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
100A
80A
60A
40A
20A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
I(V3)
V_V1
Evaluation circuit
TPCA8015-H
U2
V3
0Vdc
V2
10Vdc
V1
10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
2.000 2.600 2.702 3.919
5.000 2.690 2.781 3.398
10.000 2.810 2.878 2.406
20.000 2.970 3.026 1.872
50.000 3.300 3.361 1.839
100.000 3.800 3.804 0.116
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
17.5A
15.0A
12.5A
10.0A
7.5A
5.0A
2.5A
0A
0V 200mV 400mV 500mV
I(V3)
V_V2
Evaluation circuit
TPCA8015-H
U2
V3
0Vdc
V2
10Vdc
V1
10Vdc
0
Simulation Result
ID=17.5A, VGS=10V Measurement Simulation Error (%)
R DS (on) 4.400 m 4.460 m 1.364
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
16V
12V
8V
4V
0V
0s 10ns 20ns 30ns 40ns
V(U2:4)
Time*1m
Evaluation circuit
TPCA8015-H
U2
V2
0Vdc
W1
+
-
W D1
IOFF = 10m Dbreak I2
PER = 1000u ION = 0uA DC = 35Adc
PW = 600u ROFF = 100G
TF = 10n RON = 1m
TR = 10n
TD = 0
I2 = 10m V1
I1 32Vdc
I1 = 0
0
Simulation Result
VDD=32V,ID= 35A
Measurement Simulation Error (%)
,VGS=5V
Qgs 7.000 nC 7.288 nC 4.114
Qgd 9.000 nC 8.640 nC 4.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.100 2120.000 2100.000 -0.943
0.200 2060.000 2000.000 -2.913
0.500 1750.000 1760.000 0.571
1.000 1500.000 1500.000 0.000
2.000 1200.000 1250.000 4.167
5.000 780.000 790.000 1.282
10.000 550.000 560.000 1.818
20.000 400.000 405.000 1.250
40.000 290.000 280.000 -3.448
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
12V
11V
10V
9V
8V
7V
6V
5V
4V
3V
2V
1V
0V
4.962us 4.980us 5.000us 5.020us 5.040us 5.060us
V(2) V(3)/2
Time
Evaluation circuit
TPCA8015-H
U2
R3 L1 L2
2 3
4.7 30nH 50nH
V3 RL
V1 = 0 0Vdc
R4 1.11
V1
V2 = 20 VDD
TD = 5u 4.7
TR = 6n 20
TF = 6n
PW = 5u
PER = 10u
0 0 0 0
Simulation Result
ID=17.5A, VDD= 20V
Measurement Simulation Error(%)
VGS=0/10V
ton 12.000 ns 12.029 ns 0.242
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
100A
3.8 V
10 3.7 V
4
6
80A 4.5
3.5 V
60A 3.4 V
3.2 V
40A
3.0V
20A
VGS= 2.8V
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
V_V2
Evaluation circuit
TPCA8015-H
U2
V3
0Vdc
V2
10Vdc
V1
10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U2
TPCA8015-H
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
Simulation Result
VSD(V)
IDR(A) %Error
Measurement Simulation
0.100 0.590 0.587 -0.508
0.200 0.605 0.604 -0.165
0.500 0.627 0.627 0.000
1.000 0.645 0.646 0.155
2.000 0.665 0.666 0.150
5.000 0.700 0.697 -0.429
10.000 0.730 0.727 -0.411
20.000 0.770 0.765 -0.649
50.000 0.830 0.830 0.000
100.000 0.900 0.900 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.7us 0.9us 1.1us 1.3us 1.5us 1.7us
I(R1)
Time
Evaluation Circuit
R1 50
V1 = -9.4V
V2 = 10.6V
TD = 60n
V1
TR = 12n
TF = 10n
TPCA8015-H
PW = 1u
PER = 2u
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 18.000 ns 17.934 ns -0.367
trb 112.000 ns 110.345 ns -1.478
trr 130.000 ns 128.279 ns -1.324
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic Reference
Trj=18 (ns)
Trb=112(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1 U7
0.01m
V1
0Vdc
TPCA8015_H
Ropen
100MEG
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006