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2013
Ahmed Nader Al-Askalany
Center of Nanoelectronics and Devices
- Information Technology Institute
6/8/2013
THERMOELECTRIC DEVICES -
TCAD SIMULATION RESULTS
Presented to:
Dr. Hamdy Abdel-Hamid
Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 1
THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
Simulation Environment:
Tool Description Tool Name Version
Device Structure Editor Synopsys Sentaurus Structure Editor
G-2012.06
(1.4, RHEL32)
Mesh Generator Synopsys Sentaurus Mesh
G-2012.06
(1.12, RHEL32)
Device Simulator
Synopsys Sentaurus Device
- sdevice-thermo
- sdevice-hydro
- sdevice-mixedmode
- sdevice-3d
- sdevice-parallel
G-2012.06
(1.7, RHEL32)
Plotting and Visualization Synopsys Sentaurus Visual
G-2012.06
(1.6, ia32, linux_gnu)
Graphical Framework Synopsys Sentaurus Workbench
G-2012.06
(1.11, RHEL32)
Power Computation Methods:
𝑃1 =
𝑉2
𝑅
𝑃2 = 𝑉𝐼
Where,
𝑉 = 𝑉𝐴𝑛𝑜𝑑𝑒 − 𝑉𝐶𝑎𝑡ℎ𝑜𝑑𝑒
𝐼 = 𝐼𝐴𝑛𝑜𝑑𝑒 = 𝐼 𝐶𝑎𝑡ℎ𝑜𝑑𝑒
Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 2
THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
Detailed Structures:
Structure (1): Paper
Structure (2): Two Couples
Structure (3) T-Copper
Structure (4): Long Structure (5): Copper-Sandwiched Long
Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 3
THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
Structure (1): Thermocouple from Gold's Paper:
Body Dimension Values
P-Type
(Boron - 1E15)
X -1600 -100
Y 100 1600
Z 0 1500
N-Type
(Phosphorous - 1E15)
X 100 1600
Y 100 1600
Z 0 1500
High
Temp
Resistance
Anode
Voltage
Conduction
Current
Cathode
voltage
Voltage P1 (μW) P2 (uW)
301
10 -1.28E-04 -1.43E-05 -2.71E-04 1.43E-04 2.04E-03 2.05E-03
30 1.51E-05 -1.24E-05 -3.57E-04 3.72E-04 4.62E-03 4.62E-03
50 1.25E-04 -1.10E-05 -4.23E-04 5.48E-04 6.00E-03 6.00E-03
70 2.11E-04 -9.80E-06 -4.75E-04 6.86E-04 6.72E-03 6.73E-03
90 2.81E-04 -8.87E-06 -5.17E-04 7.99E-04 7.08E-03 7.08E-03
110 3.39E-04 -8.10E-06 -5.52E-04 8.91E-04 7.22E-03 7.22E-03
130 3.88E-04 -7.46E-06 -5.81E-04 9.69E-04 7.23E-03 7.23E-03
150 4.30E-04 -6.91E-06 -6.06E-04 1.04E-03 7.15E-03 7.15E-03
170 4.65E-04 -6.43E-06 -6.28E-04 1.09E-03 7.03E-03 7.03E-03
190 4.97E-04 -6.02E-06 -6.46E-04 1.14E-03 6.87E-03 6.87E-03
210 5.24E-04 -5.65E-06 -6.63E-04 1.19E-03 6.71E-03 6.71E-03
230 5.48E-04 -5.33E-06 -6.77E-04 1.23E-03 6.53E-03 6.53E-03
250 5.70E-04 -5.04E-06 -6.90E-04 1.26E-03 6.35E-03 6.35E-03
270 5.89E-04 -4.78E-06 -7.02E-04 1.29E-03 6.18E-03 6.18E-03
290 6.07E-04 -4.55E-06 -7.13E-04 1.32E-03 6.00E-03 6.00E-03
310 6.23E-04 -4.34E-06 -7.22E-04 1.35E-03 5.84E-03 5.84E-03
330 6.37E-04 -4.15E-06 -7.31E-04 1.37E-03 5.67E-03 5.67E-03
350 6.51E-04 -3.97E-06 -7.39E-04 1.39E-03 5.52E-03 5.52E-03
Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 4
THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
Structure (2): Two Couples:
Body Dimension Values
N-Type 1
(Phosphorous - 1E15)
X -3300 -1800
Y 100 1600
Z 0 1500
P-Type 1
(Boron - 1E15)
X -1600 -100
Y 100 1600
Z 0 1500
N-Type 2
(Phosphorous - 1E15)
X 100 1600
Y 100 1600
Z 0 1500
P-Type 2
(Boron - 1E15)
X 1800 3300
Y 100 1600
Z 0 1500
High
Temp
Resistance
Anode
Voltage
Conduction
Current
Cathode
voltage
Voltage P1 (μW) P2 (uW)
301
10 -2.88E-04 1.49E-05 -1.40E-04 1.49E-04 2.21E-03 2.21E-03
30 -4.04E-04 1.38E-05 9.38E-06 4.13E-04 5.69E-03 5.69E-03
50 -5.04E-04 1.28E-05 1.38E-04 6.41E-04 8.23E-03 8.23E-03
70 -5.90E-04 1.20E-05 2.50E-04 8.40E-04 1.01E-02 1.01E-02
90 -6.67E-04 1.13E-05 3.49E-04 1.02E-03 1.15E-02 1.15E-02
110 -7.34E-04 1.06E-05 4.36E-04 1.17E-03 1.24E-02 1.24E-02
130 -7.95E-04 1.01E-05 5.14E-04 1.31E-03 1.32E-02 1.32E-02
150 -8.49E-04 9.55E-06 5.84E-04 1.43E-03 1.37E-02 1.37E-02
170 -8.98E-04 9.09E-06 6.47E-04 1.54E-03 1.40E-02 1.40E-02
190 -9.42E-04 8.66E-06 7.04E-04 1.65E-03 1.43E-02 1.43E-02
210 -9.83E-04 8.28E-06 7.56E-04 1.74E-03 1.44E-02 1.44E-02
230 -1.02E-03 7.93E-06 8.04E-04 1.82E-03 1.45E-02 1.45E-02
250 -1.05E-03 7.61E-06 8.48E-04 1.90E-03 1.45E-02 1.45E-02
270 -1.09E-03 7.31E-06 8.88E-04 1.97E-03 1.44E-02 1.44E-02
290 -1.11E-03 7.03E-06 9.26E-04 2.04E-03 1.43E-02 1.43E-02
310 -1.14E-03 6.78E-06 9.60E-04 2.10E-03 1.42E-02 1.42E-02
330 -1.17E-03 6.54E-06 9.92E-04 2.16E-03 1.41E-02 1.41E-02
350 -1.19E-03 6.32E-06 1.02E-03 2.21E-03 1.40E-02 1.40E-02
Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 5
THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
Structure (3): T-Copper:
Body Dimension Values
N-Type 1
(Phosphorous - 1E15)
X -3300 -1800
Y 100 1600
Z 0 1500
P-Type 1
(Boron - 1E15)
X -1600 -100
Y 100 1600
Z 0 1500
N-Type 2
(Phosphorous - 1E15)
X 100 1600
Y 100 1600
Z 0 1500
P-Type 2
(Boron - 1E15)
X 1800 3300
Y 100 1600
Z 0 1500
Copper Inside Y 500
High
Temp
Resistance
Anode
Voltage
Conduction
Current
Cathode
voltage
Voltage P1 (μW) P2 (uW)
301
10 -2.85E-04 1.39E-05 -1.45E-04 1.39E-04 1.94E-03 1.94E-03
30 -3.89E-04 1.28E-05 -6.30E-06 3.83E-04 4.88E-03 4.88E-03
50 -4.78E-04 1.18E-05 1.11E-04 5.89E-04 6.94E-03 6.94E-03
70 -5.53E-04 1.09E-05 2.12E-04 7.66E-04 8.37E-03 8.38E-03
90 -6.19E-04 1.02E-05 3.00E-04 9.19E-04 9.38E-03 9.38E-03
110 -6.76E-04 9.57E-06 3.76E-04 1.05E-03 1.01E-02 1.01E-02
130 -7.27E-04 9.01E-06 4.44E-04 1.17E-03 1.05E-02 1.05E-02
150 -7.72E-04 8.51E-06 5.04E-04 1.28E-03 1.09E-02 1.09E-02
170 -8.13E-04 8.06E-06 5.58E-04 1.37E-03 1.10E-02 1.10E-02
190 -8.49E-04 7.66E-06 6.06E-04 1.45E-03 1.11E-02 1.11E-02
210 -8.82E-04 7.29E-06 6.50E-04 1.53E-03 1.12E-02 1.12E-02
230 -9.12E-04 6.96E-06 6.89E-04 1.60E-03 1.11E-02 1.11E-02
250 -9.39E-04 6.66E-06 7.26E-04 1.66E-03 1.11E-02 1.11E-02
270 -9.64E-04 6.38E-06 7.59E-04 1.72E-03 1.10E-02 1.10E-02
290 -9.87E-04 6.13E-06 7.90E-04 1.78E-03 1.09E-02 1.09E-02
310 -1.01E-03 5.89E-06 8.18E-04 1.83E-03 1.08E-02 1.08E-02
330 -1.03E-03 5.67E-06 8.44E-04 1.87E-03 1.06E-02 1.06E-02
350 -1.05E-03 5.47E-06 8.68E-04 1.91E-03 1.05E-02 1.05E-02
Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 6
THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
Structure (4): Long:
Body Dimension Values
N-Type 1
(Phosphorous - 1E15)
X -1300 -800
Y 0 3000
Z 0 2250
P-Type 1
(Boron - 1E15)
X -600 -100
Y 0 3000
Z 0 2250
N-Type 2
(Phosphorous - 1E15)
X 100 600
Y 0 3000
Z 0 2250
P-Type 2
(Boron - 1E15)
X 800 1300
Y 0 3000
Z 0 2250
Copper Length Y 2800
Copper Shift Y In=400 Out=200
High
Temp
Resistance
Anode
Voltage
Conduction
Current
Cathode
voltage
Voltage P1 (μW) P2 (uW)
301
10 6.14E-06 -9.54E-07 -3.41E-06 9.54E-06 9.11E-06 9.11E-06
30 1.06E-05 -6.39E-07 -8.60E-06 1.92E-05 1.22E-05 1.22E-05
50 1.28E-05 -4.80E-07 -1.12E-05 2.40E-05 1.15E-05 1.15E-05
70 1.41E-05 -3.85E-07 -1.28E-05 2.69E-05 1.04E-05 1.04E-05
90 1.50E-05 -3.21E-07 -1.38E-05 2.89E-05 9.25E-06 9.26E-06
110 1.57E-05 -2.75E-07 -1.46E-05 3.03E-05 8.32E-06 8.32E-06
130 1.61E-05 -2.41E-07 -1.52E-05 3.13E-05 7.54E-06 7.54E-06
150 1.65E-05 -2.14E-07 -1.56E-05 3.21E-05 6.88E-06 6.88E-06
170 1.68E-05 -1.93E-07 -1.60E-05 3.28E-05 6.32E-06 6.31E-06
190 1.71E-05 -1.75E-07 -1.62E-05 3.33E-05 5.83E-06 5.83E-06
210 1.73E-05 -1.61E-07 -1.65E-05 3.37E-05 5.42E-06 5.42E-06
230 1.74E-05 -1.48E-07 -1.67E-05 3.41E-05 5.06E-06 5.06E-06
250 1.76E-05 -1.38E-07 -1.69E-05 3.44E-05 4.74E-06 4.75E-06
270 1.77E-05 -1.29E-07 -1.70E-05 3.47E-05 4.46E-06 4.46E-06
290 1.78E-05 -1.21E-07 -1.71E-05 3.50E-05 4.21E-06 4.22E-06
310 1.79E-05 -1.14E-07 -1.73E-05 3.52E-05 3.99E-06 3.99E-06
330 1.80E-05 -1.07E-07 -1.74E-05 3.54E-05 3.79E-06 3.79E-06
350 1.81E-05 -1.02E-07 -1.75E-05 3.56E-05 3.61E-06 3.61E-06
Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 7
THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
Structure (5): Copper-sandwiched Long:
Body Dimension Values
N-Type 1
(Phosphorous - 1E15)
X -1300 -800
Y 0 3000
Z 0 2250
P-Type 1
(Boron - 1E15)
X -600 -100
Y 0 3000
Z 0 2250
N-Type 2
(Phosphorous - 1E15)
X 100 600
Y 0 3000
Z 0 2250
P-Type 2
(Boron - 1E15)
X 800 1300
Y 0 3000
Z 0 2250
Middle Copper Y 500 2500
High
Temp
Resistance
Anode
Voltage
Conduction
Current
Cathode
voltage
Voltage P1 (μW) P2 (uW)
301
10 8.03E-05 -1.36E-05 -5.60E-05 1.36E-04 1.86E-03 1.86E-03
30 1.43E-04 -8.10E-06 -9.97E-05 2.43E-04 1.97E-03 1.97E-03
50 1.70E-04 -5.76E-06 -1.18E-04 2.88E-04 1.66E-03 1.66E-03
70 1.85E-04 -4.47E-06 -1.28E-04 3.13E-04 1.40E-03 1.40E-03
90 1.94E-04 -3.65E-06 -1.35E-04 3.29E-04 1.20E-03 1.20E-03
110 2.00E-04 -3.09E-06 -1.39E-04 3.40E-04 1.05E-03 1.05E-03
130 2.05E-04 -2.67E-06 -1.43E-04 3.48E-04 9.29E-04 9.29E-04
150 2.09E-04 -2.36E-06 -1.45E-04 3.54E-04 8.33E-04 8.33E-04
170 2.11E-04 -2.11E-06 -1.47E-04 3.58E-04 7.55E-04 7.55E-04
190 2.14E-04 -1.91E-06 -1.49E-04 3.62E-04 6.90E-04 6.90E-04
210 2.16E-04 -1.74E-06 -1.50E-04 3.65E-04 6.36E-04 6.36E-04
230 2.17E-04 -1.60E-06 -1.51E-04 3.68E-04 5.89E-04 5.89E-04
250 2.19E-04 -1.48E-06 -1.52E-04 3.70E-04 5.49E-04 5.49E-04
270 2.20E-04 -1.38E-06 -1.53E-04 3.72E-04 5.14E-04 5.14E-04
290 2.21E-04 -1.29E-06 -1.53E-04 3.74E-04 4.83E-04 4.83E-04
310 2.22E-04 -1.21E-06 -1.54E-04 3.76E-04 4.55E-04 4.55E-04
330 2.22E-04 -1.14E-06 -1.55E-04 3.77E-04 4.30E-04 4.30E-04
350 2.23E-04 -1.08E-06 -1.55E-04 3.78E-04 4.08E-04 4.08E-04
Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 8
THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
Results Graphs:
Maximum Powers:
0.0000000000
0.0020000000
0.0040000000
0.0060000000
0.0080000000
0.0100000000
0.0120000000
0.0140000000
0.0160000000
10 30 50 70 90 110130150170190210230250270290310330350
Paper
TwoCouples
TCopper
Long
LongSandwiched
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
Power (uW)
Power (uW)
Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 9
THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
Sentaurus Device Command File:
Device Section:
Device Long {
File {
Grid = "/root/Desktop/AllModels/Long/Long_msh.tdr"
Plot = "/root/Desktop/AllModels/Long/Long_plot"
Current = "/root/Desktop/AllModels/Long/Long_current"
}
Electrode {
{ Name="Anode" Voltage=0}
{ Name="Cathode" Voltage=0}
}
Thermode {
{ Name = "THot" Temperature=301 SurfaceResistance=0.01}
{ Name = "TCold" Temperature=300.0 SurfaceResistance=0.01}
}
Physics {
Fermi
RecGenHeat
Thermodynamic
Hydrodynamic
ThermalConductivity(TempDep Conductivity)
HeatCapacity(TempDep)
Mobility( DopingDependece(UniBo) Enormal(UniBo))
}
Physics(MaterialInterface="Silicon/Copper") {
MSPeltierHeat
}
Physics (Material="Silicon") {
TEPower(Analytic)
}
Physics (Material="Copper") {
MetalTEPower()
}
}
Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 10
THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
Plot Section:
Plot {
eDensity
hDensity
eCurrent
hCurrent
Current
ConductionCurrent
SpaceCharge
ElectricField
Potential
eMobility
hMobility
eVelocity
hVelocity
EffectiveBandGap
BandGap
BandGapNarrowing
eQuasiFermiEnergy
hQuasiFermiEnergy
eQuasiFermi
hQuasiFermi
TotalRecombination
eTemperature
hTemperature
LatticeTemperature
eThermoelectricPower
eJouleHeat
hJouleHeat
JouleHeat
TotalHeat
RecombinationHeat
ThomsonHeat
PeltierHeat
eHeatFlux
hHeatFlux
lHeatFlux
ConductionBandEnergy
ValenceBandEnergy
eDriftVelocity
hDriftVelocity
ThermalConductivity
}
Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 11
THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
System Section:
System{
Long Long1 ( Anode=A Cathode=C )
Resistor_pset Rout ( A C ){ resistance = @RLoad@ }
}
Math Section:
Math {
*-- Parallelization on multi-CPU machine --*
Number_Of_Threads=2 * change the number of threads to > 1 to make
* parallelization possible. First ensure your machine
* has shared-memory multi-CPU configuration.
*-- Numeric/Solver Controls --*
Extrapolate * switches on solution extrapolation aLong a bias ramp
Derivatives * considers mobility derivatives in Jacobian
Iterations=8 * maximum-allowed number of Newton iterations (3D)
RelErrControl * switches on the relative error control for solution
* variables (on by default)
Digits=5 * relative error control value. Iterations stop if
* dx/x < 10^(-Digits)
Method=ILS * use the iterative linear solver with default parameter
NotDamped=100 * number of Newton iterations over which the RHS-norm
* is allowed to increase
Transient=BE * switches on BE transient method
}
Solve Section:
Solve {
Coupled{Long1.Poisson Long1.Electron Long1.Hole Long1.Temperature Long1.eTemperature Long1.hTemperature Circuit}
}
Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 12
THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
Simulation Visualization Example (TwoCouples R=250):
Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 13
THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
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THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
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THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
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THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
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THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
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THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
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THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
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THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
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THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
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THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
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THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
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THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013
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THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013

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Thermoelectric Devices TCAD Simulation

  • 1. 2013 Ahmed Nader Al-Askalany Center of Nanoelectronics and Devices - Information Technology Institute 6/8/2013 THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS Presented to: Dr. Hamdy Abdel-Hamid
  • 2. Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 1 THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013 Simulation Environment: Tool Description Tool Name Version Device Structure Editor Synopsys Sentaurus Structure Editor G-2012.06 (1.4, RHEL32) Mesh Generator Synopsys Sentaurus Mesh G-2012.06 (1.12, RHEL32) Device Simulator Synopsys Sentaurus Device - sdevice-thermo - sdevice-hydro - sdevice-mixedmode - sdevice-3d - sdevice-parallel G-2012.06 (1.7, RHEL32) Plotting and Visualization Synopsys Sentaurus Visual G-2012.06 (1.6, ia32, linux_gnu) Graphical Framework Synopsys Sentaurus Workbench G-2012.06 (1.11, RHEL32) Power Computation Methods: 𝑃1 = 𝑉2 𝑅 𝑃2 = 𝑉𝐼 Where, 𝑉 = 𝑉𝐴𝑛𝑜𝑑𝑒 − 𝑉𝐶𝑎𝑡ℎ𝑜𝑑𝑒 𝐼 = 𝐼𝐴𝑛𝑜𝑑𝑒 = 𝐼 𝐶𝑎𝑡ℎ𝑜𝑑𝑒
  • 3. Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 2 THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013 Detailed Structures: Structure (1): Paper Structure (2): Two Couples Structure (3) T-Copper Structure (4): Long Structure (5): Copper-Sandwiched Long
  • 4. Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 3 THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013 Structure (1): Thermocouple from Gold's Paper: Body Dimension Values P-Type (Boron - 1E15) X -1600 -100 Y 100 1600 Z 0 1500 N-Type (Phosphorous - 1E15) X 100 1600 Y 100 1600 Z 0 1500 High Temp Resistance Anode Voltage Conduction Current Cathode voltage Voltage P1 (μW) P2 (uW) 301 10 -1.28E-04 -1.43E-05 -2.71E-04 1.43E-04 2.04E-03 2.05E-03 30 1.51E-05 -1.24E-05 -3.57E-04 3.72E-04 4.62E-03 4.62E-03 50 1.25E-04 -1.10E-05 -4.23E-04 5.48E-04 6.00E-03 6.00E-03 70 2.11E-04 -9.80E-06 -4.75E-04 6.86E-04 6.72E-03 6.73E-03 90 2.81E-04 -8.87E-06 -5.17E-04 7.99E-04 7.08E-03 7.08E-03 110 3.39E-04 -8.10E-06 -5.52E-04 8.91E-04 7.22E-03 7.22E-03 130 3.88E-04 -7.46E-06 -5.81E-04 9.69E-04 7.23E-03 7.23E-03 150 4.30E-04 -6.91E-06 -6.06E-04 1.04E-03 7.15E-03 7.15E-03 170 4.65E-04 -6.43E-06 -6.28E-04 1.09E-03 7.03E-03 7.03E-03 190 4.97E-04 -6.02E-06 -6.46E-04 1.14E-03 6.87E-03 6.87E-03 210 5.24E-04 -5.65E-06 -6.63E-04 1.19E-03 6.71E-03 6.71E-03 230 5.48E-04 -5.33E-06 -6.77E-04 1.23E-03 6.53E-03 6.53E-03 250 5.70E-04 -5.04E-06 -6.90E-04 1.26E-03 6.35E-03 6.35E-03 270 5.89E-04 -4.78E-06 -7.02E-04 1.29E-03 6.18E-03 6.18E-03 290 6.07E-04 -4.55E-06 -7.13E-04 1.32E-03 6.00E-03 6.00E-03 310 6.23E-04 -4.34E-06 -7.22E-04 1.35E-03 5.84E-03 5.84E-03 330 6.37E-04 -4.15E-06 -7.31E-04 1.37E-03 5.67E-03 5.67E-03 350 6.51E-04 -3.97E-06 -7.39E-04 1.39E-03 5.52E-03 5.52E-03
  • 5. Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 4 THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013 Structure (2): Two Couples: Body Dimension Values N-Type 1 (Phosphorous - 1E15) X -3300 -1800 Y 100 1600 Z 0 1500 P-Type 1 (Boron - 1E15) X -1600 -100 Y 100 1600 Z 0 1500 N-Type 2 (Phosphorous - 1E15) X 100 1600 Y 100 1600 Z 0 1500 P-Type 2 (Boron - 1E15) X 1800 3300 Y 100 1600 Z 0 1500 High Temp Resistance Anode Voltage Conduction Current Cathode voltage Voltage P1 (μW) P2 (uW) 301 10 -2.88E-04 1.49E-05 -1.40E-04 1.49E-04 2.21E-03 2.21E-03 30 -4.04E-04 1.38E-05 9.38E-06 4.13E-04 5.69E-03 5.69E-03 50 -5.04E-04 1.28E-05 1.38E-04 6.41E-04 8.23E-03 8.23E-03 70 -5.90E-04 1.20E-05 2.50E-04 8.40E-04 1.01E-02 1.01E-02 90 -6.67E-04 1.13E-05 3.49E-04 1.02E-03 1.15E-02 1.15E-02 110 -7.34E-04 1.06E-05 4.36E-04 1.17E-03 1.24E-02 1.24E-02 130 -7.95E-04 1.01E-05 5.14E-04 1.31E-03 1.32E-02 1.32E-02 150 -8.49E-04 9.55E-06 5.84E-04 1.43E-03 1.37E-02 1.37E-02 170 -8.98E-04 9.09E-06 6.47E-04 1.54E-03 1.40E-02 1.40E-02 190 -9.42E-04 8.66E-06 7.04E-04 1.65E-03 1.43E-02 1.43E-02 210 -9.83E-04 8.28E-06 7.56E-04 1.74E-03 1.44E-02 1.44E-02 230 -1.02E-03 7.93E-06 8.04E-04 1.82E-03 1.45E-02 1.45E-02 250 -1.05E-03 7.61E-06 8.48E-04 1.90E-03 1.45E-02 1.45E-02 270 -1.09E-03 7.31E-06 8.88E-04 1.97E-03 1.44E-02 1.44E-02 290 -1.11E-03 7.03E-06 9.26E-04 2.04E-03 1.43E-02 1.43E-02 310 -1.14E-03 6.78E-06 9.60E-04 2.10E-03 1.42E-02 1.42E-02 330 -1.17E-03 6.54E-06 9.92E-04 2.16E-03 1.41E-02 1.41E-02 350 -1.19E-03 6.32E-06 1.02E-03 2.21E-03 1.40E-02 1.40E-02
  • 6. Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 5 THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013 Structure (3): T-Copper: Body Dimension Values N-Type 1 (Phosphorous - 1E15) X -3300 -1800 Y 100 1600 Z 0 1500 P-Type 1 (Boron - 1E15) X -1600 -100 Y 100 1600 Z 0 1500 N-Type 2 (Phosphorous - 1E15) X 100 1600 Y 100 1600 Z 0 1500 P-Type 2 (Boron - 1E15) X 1800 3300 Y 100 1600 Z 0 1500 Copper Inside Y 500 High Temp Resistance Anode Voltage Conduction Current Cathode voltage Voltage P1 (μW) P2 (uW) 301 10 -2.85E-04 1.39E-05 -1.45E-04 1.39E-04 1.94E-03 1.94E-03 30 -3.89E-04 1.28E-05 -6.30E-06 3.83E-04 4.88E-03 4.88E-03 50 -4.78E-04 1.18E-05 1.11E-04 5.89E-04 6.94E-03 6.94E-03 70 -5.53E-04 1.09E-05 2.12E-04 7.66E-04 8.37E-03 8.38E-03 90 -6.19E-04 1.02E-05 3.00E-04 9.19E-04 9.38E-03 9.38E-03 110 -6.76E-04 9.57E-06 3.76E-04 1.05E-03 1.01E-02 1.01E-02 130 -7.27E-04 9.01E-06 4.44E-04 1.17E-03 1.05E-02 1.05E-02 150 -7.72E-04 8.51E-06 5.04E-04 1.28E-03 1.09E-02 1.09E-02 170 -8.13E-04 8.06E-06 5.58E-04 1.37E-03 1.10E-02 1.10E-02 190 -8.49E-04 7.66E-06 6.06E-04 1.45E-03 1.11E-02 1.11E-02 210 -8.82E-04 7.29E-06 6.50E-04 1.53E-03 1.12E-02 1.12E-02 230 -9.12E-04 6.96E-06 6.89E-04 1.60E-03 1.11E-02 1.11E-02 250 -9.39E-04 6.66E-06 7.26E-04 1.66E-03 1.11E-02 1.11E-02 270 -9.64E-04 6.38E-06 7.59E-04 1.72E-03 1.10E-02 1.10E-02 290 -9.87E-04 6.13E-06 7.90E-04 1.78E-03 1.09E-02 1.09E-02 310 -1.01E-03 5.89E-06 8.18E-04 1.83E-03 1.08E-02 1.08E-02 330 -1.03E-03 5.67E-06 8.44E-04 1.87E-03 1.06E-02 1.06E-02 350 -1.05E-03 5.47E-06 8.68E-04 1.91E-03 1.05E-02 1.05E-02
  • 7. Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 6 THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013 Structure (4): Long: Body Dimension Values N-Type 1 (Phosphorous - 1E15) X -1300 -800 Y 0 3000 Z 0 2250 P-Type 1 (Boron - 1E15) X -600 -100 Y 0 3000 Z 0 2250 N-Type 2 (Phosphorous - 1E15) X 100 600 Y 0 3000 Z 0 2250 P-Type 2 (Boron - 1E15) X 800 1300 Y 0 3000 Z 0 2250 Copper Length Y 2800 Copper Shift Y In=400 Out=200 High Temp Resistance Anode Voltage Conduction Current Cathode voltage Voltage P1 (μW) P2 (uW) 301 10 6.14E-06 -9.54E-07 -3.41E-06 9.54E-06 9.11E-06 9.11E-06 30 1.06E-05 -6.39E-07 -8.60E-06 1.92E-05 1.22E-05 1.22E-05 50 1.28E-05 -4.80E-07 -1.12E-05 2.40E-05 1.15E-05 1.15E-05 70 1.41E-05 -3.85E-07 -1.28E-05 2.69E-05 1.04E-05 1.04E-05 90 1.50E-05 -3.21E-07 -1.38E-05 2.89E-05 9.25E-06 9.26E-06 110 1.57E-05 -2.75E-07 -1.46E-05 3.03E-05 8.32E-06 8.32E-06 130 1.61E-05 -2.41E-07 -1.52E-05 3.13E-05 7.54E-06 7.54E-06 150 1.65E-05 -2.14E-07 -1.56E-05 3.21E-05 6.88E-06 6.88E-06 170 1.68E-05 -1.93E-07 -1.60E-05 3.28E-05 6.32E-06 6.31E-06 190 1.71E-05 -1.75E-07 -1.62E-05 3.33E-05 5.83E-06 5.83E-06 210 1.73E-05 -1.61E-07 -1.65E-05 3.37E-05 5.42E-06 5.42E-06 230 1.74E-05 -1.48E-07 -1.67E-05 3.41E-05 5.06E-06 5.06E-06 250 1.76E-05 -1.38E-07 -1.69E-05 3.44E-05 4.74E-06 4.75E-06 270 1.77E-05 -1.29E-07 -1.70E-05 3.47E-05 4.46E-06 4.46E-06 290 1.78E-05 -1.21E-07 -1.71E-05 3.50E-05 4.21E-06 4.22E-06 310 1.79E-05 -1.14E-07 -1.73E-05 3.52E-05 3.99E-06 3.99E-06 330 1.80E-05 -1.07E-07 -1.74E-05 3.54E-05 3.79E-06 3.79E-06 350 1.81E-05 -1.02E-07 -1.75E-05 3.56E-05 3.61E-06 3.61E-06
  • 8. Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 7 THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013 Structure (5): Copper-sandwiched Long: Body Dimension Values N-Type 1 (Phosphorous - 1E15) X -1300 -800 Y 0 3000 Z 0 2250 P-Type 1 (Boron - 1E15) X -600 -100 Y 0 3000 Z 0 2250 N-Type 2 (Phosphorous - 1E15) X 100 600 Y 0 3000 Z 0 2250 P-Type 2 (Boron - 1E15) X 800 1300 Y 0 3000 Z 0 2250 Middle Copper Y 500 2500 High Temp Resistance Anode Voltage Conduction Current Cathode voltage Voltage P1 (μW) P2 (uW) 301 10 8.03E-05 -1.36E-05 -5.60E-05 1.36E-04 1.86E-03 1.86E-03 30 1.43E-04 -8.10E-06 -9.97E-05 2.43E-04 1.97E-03 1.97E-03 50 1.70E-04 -5.76E-06 -1.18E-04 2.88E-04 1.66E-03 1.66E-03 70 1.85E-04 -4.47E-06 -1.28E-04 3.13E-04 1.40E-03 1.40E-03 90 1.94E-04 -3.65E-06 -1.35E-04 3.29E-04 1.20E-03 1.20E-03 110 2.00E-04 -3.09E-06 -1.39E-04 3.40E-04 1.05E-03 1.05E-03 130 2.05E-04 -2.67E-06 -1.43E-04 3.48E-04 9.29E-04 9.29E-04 150 2.09E-04 -2.36E-06 -1.45E-04 3.54E-04 8.33E-04 8.33E-04 170 2.11E-04 -2.11E-06 -1.47E-04 3.58E-04 7.55E-04 7.55E-04 190 2.14E-04 -1.91E-06 -1.49E-04 3.62E-04 6.90E-04 6.90E-04 210 2.16E-04 -1.74E-06 -1.50E-04 3.65E-04 6.36E-04 6.36E-04 230 2.17E-04 -1.60E-06 -1.51E-04 3.68E-04 5.89E-04 5.89E-04 250 2.19E-04 -1.48E-06 -1.52E-04 3.70E-04 5.49E-04 5.49E-04 270 2.20E-04 -1.38E-06 -1.53E-04 3.72E-04 5.14E-04 5.14E-04 290 2.21E-04 -1.29E-06 -1.53E-04 3.74E-04 4.83E-04 4.83E-04 310 2.22E-04 -1.21E-06 -1.54E-04 3.76E-04 4.55E-04 4.55E-04 330 2.22E-04 -1.14E-06 -1.55E-04 3.77E-04 4.30E-04 4.30E-04 350 2.23E-04 -1.08E-06 -1.55E-04 3.78E-04 4.08E-04 4.08E-04
  • 9. Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 8 THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013 Results Graphs: Maximum Powers: 0.0000000000 0.0020000000 0.0040000000 0.0060000000 0.0080000000 0.0100000000 0.0120000000 0.0140000000 0.0160000000 10 30 50 70 90 110130150170190210230250270290310330350 Paper TwoCouples TCopper Long LongSandwiched 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 Power (uW) Power (uW)
  • 10. Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 9 THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013 Sentaurus Device Command File: Device Section: Device Long { File { Grid = "/root/Desktop/AllModels/Long/Long_msh.tdr" Plot = "/root/Desktop/AllModels/Long/Long_plot" Current = "/root/Desktop/AllModels/Long/Long_current" } Electrode { { Name="Anode" Voltage=0} { Name="Cathode" Voltage=0} } Thermode { { Name = "THot" Temperature=301 SurfaceResistance=0.01} { Name = "TCold" Temperature=300.0 SurfaceResistance=0.01} } Physics { Fermi RecGenHeat Thermodynamic Hydrodynamic ThermalConductivity(TempDep Conductivity) HeatCapacity(TempDep) Mobility( DopingDependece(UniBo) Enormal(UniBo)) } Physics(MaterialInterface="Silicon/Copper") { MSPeltierHeat } Physics (Material="Silicon") { TEPower(Analytic) } Physics (Material="Copper") { MetalTEPower() } }
  • 11. Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 10 THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013 Plot Section: Plot { eDensity hDensity eCurrent hCurrent Current ConductionCurrent SpaceCharge ElectricField Potential eMobility hMobility eVelocity hVelocity EffectiveBandGap BandGap BandGapNarrowing eQuasiFermiEnergy hQuasiFermiEnergy eQuasiFermi hQuasiFermi TotalRecombination eTemperature hTemperature LatticeTemperature eThermoelectricPower eJouleHeat hJouleHeat JouleHeat TotalHeat RecombinationHeat ThomsonHeat PeltierHeat eHeatFlux hHeatFlux lHeatFlux ConductionBandEnergy ValenceBandEnergy eDriftVelocity hDriftVelocity ThermalConductivity }
  • 12. Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 11 THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013 System Section: System{ Long Long1 ( Anode=A Cathode=C ) Resistor_pset Rout ( A C ){ resistance = @RLoad@ } } Math Section: Math { *-- Parallelization on multi-CPU machine --* Number_Of_Threads=2 * change the number of threads to > 1 to make * parallelization possible. First ensure your machine * has shared-memory multi-CPU configuration. *-- Numeric/Solver Controls --* Extrapolate * switches on solution extrapolation aLong a bias ramp Derivatives * considers mobility derivatives in Jacobian Iterations=8 * maximum-allowed number of Newton iterations (3D) RelErrControl * switches on the relative error control for solution * variables (on by default) Digits=5 * relative error control value. Iterations stop if * dx/x < 10^(-Digits) Method=ILS * use the iterative linear solver with default parameter NotDamped=100 * number of Newton iterations over which the RHS-norm * is allowed to increase Transient=BE * switches on BE transient method } Solve Section: Solve { Coupled{Long1.Poisson Long1.Electron Long1.Hole Long1.Temperature Long1.eTemperature Long1.hTemperature Circuit} }
  • 13. Prepared by: Ahmed Nader Al-Askalany - CND-ITI - [6/8/2013] Page 12 THERMOELECTRIC DEVICES - TCAD SIMULATION RESULTS 2013 Simulation Visualization Example (TwoCouples R=250):
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