SPICE MODEL of SSM3J112TU (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model parameter)
PART NUMBER: SSM3J112TU
MANUFACTURER: TOSHIBA
Body Diode (Model parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
1.4
1.2
1
0.8
gfs
0.6
0.4
0.2
Measurement
Simulation
0
0 100 200 300 400 500 600 700 800 900 1000
-ID(mA)
Comparison table
gfs
- Id(mA) Error(%)
Measurement Simulation
1 0.0232 0.023 0.870
2 0.0545 0.054 0.926
5 0.09 0.088 2.273
10 0.127 0.123 3.252
20 0.17 0.175 -2.857
50 0.265 0.276 -3.986
100 0.385 0.391 -1.535
200 0.545 0.551 -1.089
500 0.84 0.867 -3.114
1000 1.17 1.220 -4.098
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
-10A
-1.0mA
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
V2
SSM3J112
-5
V1
-3
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
Measurement
Simulation
100
-ID - Drain Current - mA
1
0 1 2 3 4 5
-VGS - Gate to Source Voltage - V
Simulation Result
- VGS(V)
- ID(mA) Error (%)
Measurement Simulation
1 1.700 1.6887 -0.665
2 1.730 1.7121 -1.035
5 1.800 1.7552 -2.489
10 1.850 1.8037 -2.503
20 1.95 1.8724 -3.979
50 2.1 2.0087 -4.348
100 2.2 2.1625 -1.705
200 2.4 2.3803 -0.821
500 2.9 2.8136 -2.979
1000 3.4 3.3037 -2.832
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
-500mA
-250mA
0A
0V -100mV -200mV -300mV
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
U1
V3
0Vdc
SSM3J112
V1
-10
0
Simulation Result
ID=-0.5A, VGS=-10V Measurement Simulation Error (%)
R DS (on) 310.000 m 315.852 m 1.888
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
-10V
-5V
0V
0 1.0n 2.0n 3.0n
V(W1:4)
Time*1mA
Evaluation circuit
U1
W
- SSM3J112
+ I2
D1
W1 Dbreak -1
IOFF = 100uA
I1 TD = 0 ION = 0
TF = 10n ROFF = 1e6
PW = 200u RON = 1.0 V1
PER = 500u
I1 = 0
I2 = 1m -24
TR = 10n
0
Simulation Result
VDD=36V,ID=3A Measurement Simulation Error (%)
Qgs 0.4 nC 0.4001 nC 0.025
Qgd 0.7 nC 0.6883 nC -1.671
Qg 2.25 nC 2.1101 nC -6.218
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
- VDS(V) Error(%)
Measurement Simulation
0.1 39 38.95 -0.128
0.2 37 36.9 -0.270
0.5 32 32.4 1.250
1 28 27.8 -0.714
2 23 22.9 -0.435
5 17 16.9 -0.588
10 13 13.1 0.769
20 10 10.05 0.500
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
-5.0V
-2.5V
0V
1.975us 2.000us 2.025us 2.050us
V(U1:G) V(U1:D)/3.75
Time
Evaluation circuit
L1 R2
50nH
U1
30
V1
L2
SSM3J112 -15
30nH
V1 = 0 V2
V2 = -4 R4
TD = 2u
TR = 4n 10
TF = 4n
PW = 10u
PER = 30u
0
Simulation Result
ID=-0.5 A, VDD=-15V
Measurement Simulation Error(%)
VGS=0/-4V
Ton(ns) 14.000 14.024 0.171
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
-2.0A
-10 -4 .5
-4
-1.5A
-3 .5
-1.0A
-3
-0.5A
VGS=-2.5 V
0A
0V -0.5V -1.0V -1.5V -2.0V
I(V3)
V_V2
Evaluation circuit
V3
U1 0Vdc
SSM3J112
V2
V1 -2
-4
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
2.0A
1.6A
1.2A
0.8A
0.4A
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1
V1
0Vdc
SSM3J112
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
Measurement
1.9
Simulation
1.6
Drain reverse current IDR(A)
1.3
1
0.7
0.4
0.1
0 0.2 0.4 0.6 0.8 1
Source-Drain voltage VSD(V)
Simulation Result
VSD(V)
IDR(A) Measuremen Simulation %Error
0.1 0.73 0.7298 -0.027
0.2 0.755 0.7552 0.026
0.5 0.8 0.7998 -0.025
1 0.845 0.8450 0.000
2 0.91 0.9067 -0.363
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
14.98us 15.00us 15.02us 15.04us 15.06us 15.08us
I(RL)
Time
Evaluation Circuit
RL
50
U2
V1 = -9.3 V1
V2 = 10.75
TD = 0
TR = 10n SSM3J112
TF = 10n
PW = 15u
PER = 100u
0
Compare Measurement vs. Simulation
Trr(ns) Measurement Simulation Error (%)
Trj+Trb (ns) 12 12.198 1.65
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic Reference
Trj=7.2(ns)
Trb=4.8(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
5mA
0A
0V 25V 50V
I(R1)
V_V1
Evaluation Circuit
U1
R1
SSM3J112
0.01m
R2
V1
0Vdc 1G
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006