SPICE MODEL of SSM3J120TU (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of SSM3J120TU (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of SSM3J120TU (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: MOSFET (Model Parameter) PART NUMBER: SSM3J120TU MANUFACTURER: TOSHIBA REMARK: P Channel Model Body Diode (Parameter) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 2. Circuit Configuration MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 3. Transconductance Characteristic Circuit Simulation Result 0.2 0.15 gfs 0.1 0.05 Measurement Simulation 0 0 10 20 30 40 50 - ID - Drain Current - mA Comparison table gfs Id(mA) Error(%) Measurement Simulation -0.1 0.005 0.005 4.167 -0.2 0.008 0.008 4.575 -0.5 0.013 0.014 4.478 -1 0.020 0.020 0.000 -2 0.027 0.028 3.704 -5 0.043 0.045 4.651 -10 0.062 0.063 1.613 -20 0.091 0.091 -0.549 -50 0.143 0.143 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 4. Vgs-Id Characteristic Circuit Simulation result -10A -10mA 0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V -1.4V I(V3) V_V1 Evaluation circuit V3 0Vdc U1 SSM3J120TU V2 V1 -10 -3 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 5. Comparison Graph Circuit Simulation Result 10 Measurement BeeTech - ID - Drain Current - A 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 - VGS - Gate to Source Voltage - V Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation -0.01 -0.690 -0.722 4.638 -0.02 -0.710 -0.735 3.521 -0.05 -0.760 -0.760 0.000 -0.1 -0.805 -0.790 -1.863 -0.2 -0.850 -0.832 -2.118 -0.5 -0.935 -0.916 -2.032 -1 -1.000 -1.012 1.200 -2 -1.100 -1.150 4.545 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 6. Rds(on) Characteristic Circuit Simulation result -5.0A -4.0A -3.0A -2.0A -1.0A 0A 0V -25mV -50mV -75mV -100mV -125mV -150mV I(V2) V_V3 Evaluation circuit V2 0Vdc U1 SSM3J120TU V3 0Vdc V1 -10 0 Simulation Result ID=-3.0A, VGS=-4.0V Measurement Simulation Error (%) R DS (on) 84.000 m 83.910 m -0.107 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 7. Gate Charge Characteristic Circuit Simulation result -10V -8V -6V -4V -2V 0V 0 10n 20n 30n 40n 50n 60n 70n V(W1:4) Time*1mA Evaluation circuit U1 SSM3J120TU W - + I2 D1 W1 Dbreak -4 IOFF = 1mA I1 TD = 0 ION = 0 TF = 1n ROFF = 1e6 PW = 600u RON = 1.0 V1 PER = 1500u I1 = 0 I2 = 1m -16 TR = 1n 0 Simulation Result VDD=-16V,ID=-4A Measurement Simulation Error (%) ,VGS=-4V Qgs 2.000 nC 2.024 nC 1.200 Qgd 9.800 nC 9.816 nC 0.163 Qg 23.000 nC 16.267 nC -29.274 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 200.000 199.000 -0.500 0.2 158.000 160.000 1.266 0.5 100.000 101.000 1.000 1 60.000 61.500 2.500 2 35.000 35.000 0.000 5 15.000 14.800 -1.333 10 7.000 7.000 0.000 20 200.000 199.000 -0.500 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 9. Switching Time Characteristic Circuit Simulation result -3.0V -2.0V -1.0V 0V 1.90us 2.00us 2.10us 2.20us 2.30us V(U1:G) V(U1:D)/4 Time Evaluation circuit L1 R3 30nH 5 R1 L2 U1 SSM3J120TU 30nH -10 V1 4.7 V1 = 0 V2 V2 = -5 R2 TD = 2u TR = 10n 4.7 TF = 10n PW = 10u PER = 50u 0 Simulation Result ID=-2.0A, VDD=-10V Measurement Simulation Error(%) VGS=-2.5V ton 67.000 ns 67.044 ns 0.066 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 10. Output Characteristic Circuit Simulation result -2.0A -1.3V -1.8A -1.6A -1.4A -1.2A -1.2V -1.0A -0.8A -0.6A -1.1V -0.4A -0.2A VGS= -1.0V 0A 0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V -1.4V -1.6V -1.8V I(V3) V_V2 Evaluation circuit V3 0Vdc U1 SSM3J120TU V2 V1 0 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 11. Output Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 12. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result -4.0A -3.0A -2.0A -1.0A 0A 0V 0.2V 0.4V 0.6V 0.8V 1.0V -I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc SSM3J120TU 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 13. Comparison Graph Circuit Simulation Result 4 Measurement Simulation 3 - Drain reverse current IDR(A) 2 1 0 0 0.2 0.4 0.6 0.8 1 Drain Source voltage VDS(V) Simulation Result VDS(V) VDS(V) -IDR(A) %Error Measurement Simulation 0.100 0.450 0.445 -1.111 0.250 0.485 0.489 0.825 0.500 0.530 0.530 0.019 1.000 0.580 0.584 0.690 2.000 0.650 0.654 0.615 3.000 0.705 0.706 0.142 4.000 0.750 0.751 0.120 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 14. Reverse Recovery Characteristic Circuit Simulation Result 400mA 200mA 0A -200mA -400mA 19.88us 19.96us 20.04us 20.12us 20.20us 20.28us I(RL) Time Evaluation Circuit RL 50 V1 = -9.65 V1 V2 = 10.5 TD = 20n U1 TR = 10n SSM3J120TU TF = 20n PW = 20u PER = 100u 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 15.200 ns 15.337 ns 0.901 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 15. Reverse Recovery Characteristic Reference Trj=15.2(ns) Trb=28.8(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 16. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result 10mA 5mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 U1 SSM3J120TU 0.01m R2 V1 1G 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 17. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006