The document provides an overview of a class on fundamentals of power electronics. It covers topics like power electronics, power electronic devices, applications of power electronics, thyristors, characteristics of SCR, turn on and turn off methods of SCR, and classifications of commutation techniques. The class discusses concepts related to control and conversion of electric power using solid state devices.
This document discusses various power semiconductor devices used in power electronics, including power diodes, thyristors, SCRs, and TRIACs. It provides details on their structural features, characteristics, and operating principles. Thyristors like SCRs can conduct current in either direction but only be turned on by a gate signal, while TRIACs can conduct bidirectionally and be turned on by a gate pulse of either polarity.
The document discusses various types of thyristor devices including SCR, Diac, and Triac. It provides details on their construction, operating principles, characteristics, and applications. Specifically:
- SCR (Silicon Controlled Rectifier) is a thyristor that can conduct current in only one direction. It has three layers of p-n-p-n material and three terminals - Anode, Cathode, Gate.
- Diac is a bidirectional thyristor used for triggering Triacs. It has two electrodes and four alternating p-n layers with no gate terminal. It conducts for both voltage polarities.
- Triac is a three-terminal bidirectional AC switch that
This document provides lecture notes on power electronics for a 6th semester electrical engineering course. It covers key topics in four modules:
Module 1 introduces thyristors, their static V-I characteristics and turn-on/turn-off mechanisms. It also discusses power BJTs, MOSFETs, IGBTs and their characteristics.
Module 2 covers single-phase and three-phase rectifier circuits including half-wave, full-wave and bridge configurations. It analyzes input current harmonics, power factor and waveforms.
Module 3 discusses DC-DC converters like choppers and their operations. It also introduces single-phase AC-AC cycloconverters and AC voltage regulators.
Module
Thyristors are four-layer semiconductor devices that can efficiently control and convert large amounts of power in AC or DC systems. They have higher power handling capabilities than diodes and transistors. A thyristor is turned on by applying a voltage at its gate terminal and remains on until the current drops to zero. Thyristors are used in applications that require switching or controlling high currents like speed control, voltage regulation, and circuit protection. They can be connected in series and parallel configurations to achieve higher voltages and currents.
Industrial electronics 1 marks- polytechnicSukesh R
The document discusses various power semiconductor devices and their applications. It provides definitions and explanations of silicon controlled rectifier (SCR), insulated gate bipolar transistor (IGBT), gate turn-off thyristor (GTO), metal-oxide-semiconductor field-effect transistor (MOSFET), and other related terms. Some key applications mentioned include motor drives, UPS systems, static breakers, and industrial uses. The document also covers triggering mechanisms, commutation methods, and inverters.
Industrial electronics 1 marks- polytechnicSukesh R
The document discusses power electronic devices such as SCR, IGBT, MOSFET and GTO. It provides definitions of key terms related to these devices such as triggering, gate triggering, latching current, and applications. Specific topics covered include:
1. SCR, IGBT, MOSFET and GTO are power semiconductor switching devices. SCR can be triggered through its gate or by increasing voltage.
2. Inverters, choppers, and UPS systems are discussed as applications that use these devices to convert power efficiently.
3. Forced and natural commutation methods are described for turning devices off in different circuit configurations.
The document discusses programmable logic controllers (PLCs) and their applications in industrial electronics. It provides definitions and explanations of key concepts such as:
1) PLCs use programmable memory to store instructions to implement logic, timing and sequencing functions to control machines and processes.
2) Relays are electrically operated switches used to control high voltage/current devices with low voltage/current control signals in PLC systems.
3) PLC programming uses ladder logic diagrams to create control programs that represent the logical functions of relay-based hardwired controllers.
This document discusses various power semiconductor devices used in power electronics, including power diodes, thyristors, SCRs, and TRIACs. It provides details on their structural features, characteristics, and operating principles. Thyristors like SCRs can conduct current in either direction but only be turned on by a gate signal, while TRIACs can conduct bidirectionally and be turned on by a gate pulse of either polarity.
The document discusses various types of thyristor devices including SCR, Diac, and Triac. It provides details on their construction, operating principles, characteristics, and applications. Specifically:
- SCR (Silicon Controlled Rectifier) is a thyristor that can conduct current in only one direction. It has three layers of p-n-p-n material and three terminals - Anode, Cathode, Gate.
- Diac is a bidirectional thyristor used for triggering Triacs. It has two electrodes and four alternating p-n layers with no gate terminal. It conducts for both voltage polarities.
- Triac is a three-terminal bidirectional AC switch that
This document provides lecture notes on power electronics for a 6th semester electrical engineering course. It covers key topics in four modules:
Module 1 introduces thyristors, their static V-I characteristics and turn-on/turn-off mechanisms. It also discusses power BJTs, MOSFETs, IGBTs and their characteristics.
Module 2 covers single-phase and three-phase rectifier circuits including half-wave, full-wave and bridge configurations. It analyzes input current harmonics, power factor and waveforms.
Module 3 discusses DC-DC converters like choppers and their operations. It also introduces single-phase AC-AC cycloconverters and AC voltage regulators.
Module
Thyristors are four-layer semiconductor devices that can efficiently control and convert large amounts of power in AC or DC systems. They have higher power handling capabilities than diodes and transistors. A thyristor is turned on by applying a voltage at its gate terminal and remains on until the current drops to zero. Thyristors are used in applications that require switching or controlling high currents like speed control, voltage regulation, and circuit protection. They can be connected in series and parallel configurations to achieve higher voltages and currents.
Industrial electronics 1 marks- polytechnicSukesh R
The document discusses various power semiconductor devices and their applications. It provides definitions and explanations of silicon controlled rectifier (SCR), insulated gate bipolar transistor (IGBT), gate turn-off thyristor (GTO), metal-oxide-semiconductor field-effect transistor (MOSFET), and other related terms. Some key applications mentioned include motor drives, UPS systems, static breakers, and industrial uses. The document also covers triggering mechanisms, commutation methods, and inverters.
Industrial electronics 1 marks- polytechnicSukesh R
The document discusses power electronic devices such as SCR, IGBT, MOSFET and GTO. It provides definitions of key terms related to these devices such as triggering, gate triggering, latching current, and applications. Specific topics covered include:
1. SCR, IGBT, MOSFET and GTO are power semiconductor switching devices. SCR can be triggered through its gate or by increasing voltage.
2. Inverters, choppers, and UPS systems are discussed as applications that use these devices to convert power efficiently.
3. Forced and natural commutation methods are described for turning devices off in different circuit configurations.
The document discusses programmable logic controllers (PLCs) and their applications in industrial electronics. It provides definitions and explanations of key concepts such as:
1) PLCs use programmable memory to store instructions to implement logic, timing and sequencing functions to control machines and processes.
2) Relays are electrically operated switches used to control high voltage/current devices with low voltage/current control signals in PLC systems.
3) PLC programming uses ladder logic diagrams to create control programs that represent the logical functions of relay-based hardwired controllers.
This document provides an overview of thyristors, which are four-layer semiconductor devices that can switch between two states: on and off. The key points covered include:
- Thyristors have alternating p-type and n-type layers and three terminals - anode, cathode, and gate. Applying a voltage at the gate can trigger the thyristor to switch from off to on.
- There are four operating modes for thyristors depending on voltage polarity and gate signal: reverse blocking, reverse conduction, forward blocking, and forward conduction.
- Important thyristor specifications include forward breakover voltage, holding current, and gate trigger current.
- Thyristors can be
The document provides information on various thyristor devices used for power control including the Silicon Controlled Rectifier (SCR), Triode AC Switch (TRIAC), Diode AC Switch (DIAC), and Insulated-Gate Bipolar Transistor (IGBT). It discusses the construction, operation, characteristics and applications of SCRs, TRIACs, and DIACs. The SCR is described as the most important thyristor device used in applications requiring efficient power control like switch mode power supplies. TRIACs can conduct current in both directions making them suitable for controlling AC power while DIACs consist of two diodes connected to form a bidirectional switching device.
The document discusses various power semiconductor devices used as switches in power electronics applications. It describes power diodes, thyristors, power transistors, and other devices. Key points covered include:
1. Power diodes conduct current in the forward direction and block voltage in the reverse direction. Thyristors can conduct in both directions but require a gate signal to turn on.
2. Thyristors like SCRs have four alternating layers of p-type and n-type semiconductor material. They can latch on in the conducting state once triggered by a gate signal.
3. Other power semiconductor devices discussed include power MOSFETs, IGBTs, and GTO thyristors. Each
This ppt provides a brief overview on thyristors commonly known as SCRs. V- I characteristics curve, triggering methods, protection methods, series and parallel operations of SCRs, applications are discussed in this slide.
This experiment investigates the construction, operation, and characteristics of a silicon-controlled rectifier (SCR). Key objectives include understanding the PNPN construction of an SCR, its operation as a switch controlled by a gate signal, and measuring its characteristics using an ohmmeter. The document provides details on SCR structure, triggering, characteristics curves, and testing methods. It describes how SCRs can be triggered through the gate using DC, pulse, or phase shift signals to control power circuits.
The document discusses substations and their components. It defines a substation as an assembly of apparatus that transforms electrical energy from one form to another, such as changing voltage levels. Substations contain step-up transformers to increase voltage for transmission and step-down transformers to decrease voltage for distribution to consumers. The document describes various types of substations and explains their functions. It also provides details about components within substations such as circuit breakers, transformers, buses, isolators and instrument transformers.
The document is a presentation on silicon controlled rectifiers (SCRs) given by five students. It introduces SCRs, explaining that they are power electronic devices that can convert AC to DC and control power to a load. The presentation describes the basic structure and operation of SCRs, including how applying a voltage to the gate terminal allows current to flow. It also covers the characteristics curve and applications of SCRs in areas like rectification, power supplies, motor controls and battery charging. In conclusion, SCRs are widely used power components due to their ability to easily switch high currents and their low cost.
Thyristors are power semiconductor devices that operate as bi-stable switches and are extensively used in power electronics. A thyristor has a p-n-p-n structure with three p-n junctions and three terminals - anode, cathode, and gate. When the anode voltage exceeds the forward breakdown voltage, the thyristor switches to the conducting state. It can be switched off only by reducing the anode current below the holding current. The document discusses thyristor turn-on methods including gate, thermal, light, and high voltage triggering. Resistance and RC triggering circuits are described for controlling the thyristor firing angle.
This document discusses power semiconducting switches, specifically thyristors. It defines thyristors and lists some common types, including SCRs, GTOs, triacs, and LASCRs. It then focuses on SCRs, describing their structure, characteristics like triggering methods, and important applications. Protection of thyristors is also covered, such as protecting against high di/dt, dv/dt, overvoltage, overcurrent, and noise. Common uses of thyristors include electric vehicle control, switching, HVDC transmission, and industrial applications.
This document discusses silicon controlled rectifiers (SCRs) and provides information on their operating modes, characteristics, and applications. It describes how SCRs operate in forward and reverse blocking modes and forward conduction mode. It also discusses latching and holding current, turn-on methods, snubber circuits, parallel and series operation, and the two-transistor analogy model of SCR operation. Triacs, which can conduct in both half-cycles of an AC supply, are also introduced.
Silicon Controlled Rectifier (SCR) is a unidirectional semiconductor device made of silicon.SCR is a three-terminal, four-layer semiconductor device consisting of alternate layers of p-type and n-type material.
This document provides information about experiments to characterize various power electronics devices like SCR, MOSFET, and IGBT. It includes circuit diagrams, procedures to obtain characteristics like V-I, transfer and output, and questions for a viva voce. The experiments aim to determine characteristics like latching current, holding current for SCR, and transfer and output curves for MOSFET and IGBT. Gate triggering circuits using RC and resistance triggering for SCR are also described.
Condition based monitoring (CBM) has been implemented at Adani Power Maharashtra Limited to monitor electrical equipment and detect issues before failures occur. CBM involves regularly monitoring key parameters of equipment like transformers, circuit breakers, and insulators. This has helped replace faulty equipment like a wave trap and isolator contact tip during scheduled outages. CBM also detected heating in circuit breaker clamps and leakage in a lightning arrestor, avoiding potential outages. By trending gas levels in transformers, degassing was performed before failure. Overall, CBM is an effective tool for improving system reliability and performance by identifying issues early and planning maintenance.
SCRs are mainly used in devices where the control of high power, possibly coupled with high voltage, is demanded. Their operation makes them suitable for use in medium- to high-voltage AC power control applications, such as lamp dimming, power regulators and motor control.
This document contains questions and answers related to power electronics topics like phase controlled converters. Some key points:
- Phase controlled rectifiers convert fixed AC voltage to variable DC voltage by controlling the firing delay angle. Common applications include motor drives, traction systems, and process control.
- Freewheeling diodes improve input power factor and output current waveform quality in controlled rectifiers.
- Single phase bridge converters have advantages over midpoint converters like lower peak inverse voltages on SCRs and lower transformer ratings.
- Firing circuits for line commutated converters include UJT, cosine wave crossing pulse timing control, and digital schemes.
- Six-pulse converters have simpler commutation and reduced lower order
This document contains questions and answers related to power electronics devices and converters. It begins with definitions of key power electronics terms:
- IGBT is popular due to lower switching losses and smaller snubber circuit requirements.
- Thyristors can be turned on through forward voltage, gate, dv/dt, temperature, or light triggering.
- Power diodes have higher voltage, current, and power ratings than signal diodes due to a drift region construction.
- IGBTs, power MOSFETs, and power BJTs are voltage, voltage, and current controlled devices respectively due to how their output current is controlled by their input signals.
- There are N-channel and P-channel
This document discusses power diodes and their characteristics. It begins with an introduction to power diodes, describing how they are made suitable for high current and voltage applications. Characteristics like the voltage-current relationship are examined for signal diodes, power diodes, and ideal diodes. Reverse recovery characteristics are also covered. Different types of power diodes like general purpose, fast recovery, and Schottky diodes are defined. Assessment questions are included throughout to test understanding. References for further reading are provided at the end.
This document discusses different methods for turning on or triggering an SCR (silicon controlled rectifier). It describes gate triggering as the most common and efficient method, where a positive voltage applied between the gate and cathode terminals injects electrons to cause breakdown at junction J2. It also discusses forward voltage, temperature, dv/dt, and light triggering but indicates they have disadvantages like requiring high voltages, causing thermal runaway, or producing high voltage spikes. Pulse triggering with a single pulse or train of pulses through a pulse transformer is highlighted as the most popular gate triggering method to reduce gate losses.
This document provides an overview of power semiconductor devices taught in a course at S.M.D.R. Government Polytechnic in Dhule, India. It covers various topics including semiconductor devices like power diodes, transistors, thyristors, and their characteristics. Specifically, it discusses the structures, symbols, V-I characteristics, and applications of power diodes, BJTs, MOSFETs, IGBTs, SITs, thyristors, SCRs, and triacs. It provides comparisons of the key features of BJTs vs MOSFETs and IGBTs vs MOSFETs. The document aims to educate students about important power semiconductor devices and their working principles
The document provides an overview of a class on fundamentals of power electronics. It covers topics like power electronics, power control using devices like thyristors, characteristics of SCR including V-I characteristics and different turn on/off methods. Diagrams are included to explain concepts like two transistor analogy of SCR, different commutation techniques etc. The document acts as notes for a class on basic concepts of power electronics.
This document provides an overview of thyristors, which are four-layer semiconductor devices that can switch between two states: on and off. The key points covered include:
- Thyristors have alternating p-type and n-type layers and three terminals - anode, cathode, and gate. Applying a voltage at the gate can trigger the thyristor to switch from off to on.
- There are four operating modes for thyristors depending on voltage polarity and gate signal: reverse blocking, reverse conduction, forward blocking, and forward conduction.
- Important thyristor specifications include forward breakover voltage, holding current, and gate trigger current.
- Thyristors can be
The document provides information on various thyristor devices used for power control including the Silicon Controlled Rectifier (SCR), Triode AC Switch (TRIAC), Diode AC Switch (DIAC), and Insulated-Gate Bipolar Transistor (IGBT). It discusses the construction, operation, characteristics and applications of SCRs, TRIACs, and DIACs. The SCR is described as the most important thyristor device used in applications requiring efficient power control like switch mode power supplies. TRIACs can conduct current in both directions making them suitable for controlling AC power while DIACs consist of two diodes connected to form a bidirectional switching device.
The document discusses various power semiconductor devices used as switches in power electronics applications. It describes power diodes, thyristors, power transistors, and other devices. Key points covered include:
1. Power diodes conduct current in the forward direction and block voltage in the reverse direction. Thyristors can conduct in both directions but require a gate signal to turn on.
2. Thyristors like SCRs have four alternating layers of p-type and n-type semiconductor material. They can latch on in the conducting state once triggered by a gate signal.
3. Other power semiconductor devices discussed include power MOSFETs, IGBTs, and GTO thyristors. Each
This ppt provides a brief overview on thyristors commonly known as SCRs. V- I characteristics curve, triggering methods, protection methods, series and parallel operations of SCRs, applications are discussed in this slide.
This experiment investigates the construction, operation, and characteristics of a silicon-controlled rectifier (SCR). Key objectives include understanding the PNPN construction of an SCR, its operation as a switch controlled by a gate signal, and measuring its characteristics using an ohmmeter. The document provides details on SCR structure, triggering, characteristics curves, and testing methods. It describes how SCRs can be triggered through the gate using DC, pulse, or phase shift signals to control power circuits.
The document discusses substations and their components. It defines a substation as an assembly of apparatus that transforms electrical energy from one form to another, such as changing voltage levels. Substations contain step-up transformers to increase voltage for transmission and step-down transformers to decrease voltage for distribution to consumers. The document describes various types of substations and explains their functions. It also provides details about components within substations such as circuit breakers, transformers, buses, isolators and instrument transformers.
The document is a presentation on silicon controlled rectifiers (SCRs) given by five students. It introduces SCRs, explaining that they are power electronic devices that can convert AC to DC and control power to a load. The presentation describes the basic structure and operation of SCRs, including how applying a voltage to the gate terminal allows current to flow. It also covers the characteristics curve and applications of SCRs in areas like rectification, power supplies, motor controls and battery charging. In conclusion, SCRs are widely used power components due to their ability to easily switch high currents and their low cost.
Thyristors are power semiconductor devices that operate as bi-stable switches and are extensively used in power electronics. A thyristor has a p-n-p-n structure with three p-n junctions and three terminals - anode, cathode, and gate. When the anode voltage exceeds the forward breakdown voltage, the thyristor switches to the conducting state. It can be switched off only by reducing the anode current below the holding current. The document discusses thyristor turn-on methods including gate, thermal, light, and high voltage triggering. Resistance and RC triggering circuits are described for controlling the thyristor firing angle.
This document discusses power semiconducting switches, specifically thyristors. It defines thyristors and lists some common types, including SCRs, GTOs, triacs, and LASCRs. It then focuses on SCRs, describing their structure, characteristics like triggering methods, and important applications. Protection of thyristors is also covered, such as protecting against high di/dt, dv/dt, overvoltage, overcurrent, and noise. Common uses of thyristors include electric vehicle control, switching, HVDC transmission, and industrial applications.
This document discusses silicon controlled rectifiers (SCRs) and provides information on their operating modes, characteristics, and applications. It describes how SCRs operate in forward and reverse blocking modes and forward conduction mode. It also discusses latching and holding current, turn-on methods, snubber circuits, parallel and series operation, and the two-transistor analogy model of SCR operation. Triacs, which can conduct in both half-cycles of an AC supply, are also introduced.
Silicon Controlled Rectifier (SCR) is a unidirectional semiconductor device made of silicon.SCR is a three-terminal, four-layer semiconductor device consisting of alternate layers of p-type and n-type material.
This document provides information about experiments to characterize various power electronics devices like SCR, MOSFET, and IGBT. It includes circuit diagrams, procedures to obtain characteristics like V-I, transfer and output, and questions for a viva voce. The experiments aim to determine characteristics like latching current, holding current for SCR, and transfer and output curves for MOSFET and IGBT. Gate triggering circuits using RC and resistance triggering for SCR are also described.
Condition based monitoring (CBM) has been implemented at Adani Power Maharashtra Limited to monitor electrical equipment and detect issues before failures occur. CBM involves regularly monitoring key parameters of equipment like transformers, circuit breakers, and insulators. This has helped replace faulty equipment like a wave trap and isolator contact tip during scheduled outages. CBM also detected heating in circuit breaker clamps and leakage in a lightning arrestor, avoiding potential outages. By trending gas levels in transformers, degassing was performed before failure. Overall, CBM is an effective tool for improving system reliability and performance by identifying issues early and planning maintenance.
SCRs are mainly used in devices where the control of high power, possibly coupled with high voltage, is demanded. Their operation makes them suitable for use in medium- to high-voltage AC power control applications, such as lamp dimming, power regulators and motor control.
This document contains questions and answers related to power electronics topics like phase controlled converters. Some key points:
- Phase controlled rectifiers convert fixed AC voltage to variable DC voltage by controlling the firing delay angle. Common applications include motor drives, traction systems, and process control.
- Freewheeling diodes improve input power factor and output current waveform quality in controlled rectifiers.
- Single phase bridge converters have advantages over midpoint converters like lower peak inverse voltages on SCRs and lower transformer ratings.
- Firing circuits for line commutated converters include UJT, cosine wave crossing pulse timing control, and digital schemes.
- Six-pulse converters have simpler commutation and reduced lower order
This document contains questions and answers related to power electronics devices and converters. It begins with definitions of key power electronics terms:
- IGBT is popular due to lower switching losses and smaller snubber circuit requirements.
- Thyristors can be turned on through forward voltage, gate, dv/dt, temperature, or light triggering.
- Power diodes have higher voltage, current, and power ratings than signal diodes due to a drift region construction.
- IGBTs, power MOSFETs, and power BJTs are voltage, voltage, and current controlled devices respectively due to how their output current is controlled by their input signals.
- There are N-channel and P-channel
This document discusses power diodes and their characteristics. It begins with an introduction to power diodes, describing how they are made suitable for high current and voltage applications. Characteristics like the voltage-current relationship are examined for signal diodes, power diodes, and ideal diodes. Reverse recovery characteristics are also covered. Different types of power diodes like general purpose, fast recovery, and Schottky diodes are defined. Assessment questions are included throughout to test understanding. References for further reading are provided at the end.
This document discusses different methods for turning on or triggering an SCR (silicon controlled rectifier). It describes gate triggering as the most common and efficient method, where a positive voltage applied between the gate and cathode terminals injects electrons to cause breakdown at junction J2. It also discusses forward voltage, temperature, dv/dt, and light triggering but indicates they have disadvantages like requiring high voltages, causing thermal runaway, or producing high voltage spikes. Pulse triggering with a single pulse or train of pulses through a pulse transformer is highlighted as the most popular gate triggering method to reduce gate losses.
This document provides an overview of power semiconductor devices taught in a course at S.M.D.R. Government Polytechnic in Dhule, India. It covers various topics including semiconductor devices like power diodes, transistors, thyristors, and their characteristics. Specifically, it discusses the structures, symbols, V-I characteristics, and applications of power diodes, BJTs, MOSFETs, IGBTs, SITs, thyristors, SCRs, and triacs. It provides comparisons of the key features of BJTs vs MOSFETs and IGBTs vs MOSFETs. The document aims to educate students about important power semiconductor devices and their working principles
The document provides an overview of a class on fundamentals of power electronics. It covers topics like power electronics, power control using devices like thyristors, characteristics of SCR including V-I characteristics and different turn on/off methods. Diagrams are included to explain concepts like two transistor analogy of SCR, different commutation techniques etc. The document acts as notes for a class on basic concepts of power electronics.
The 8051 microcontroller contains a 16-bit timer/counter that can be used for timing and counting applications. The timer/counter can operate in one of three modes - mode 0 counts external events with no prescaling, mode 1 counts external events with a programmable prescaler, and mode 2 generates internal timing pulses for time delay purposes. The timer/counter is a versatile component of the 8051 that allows it to perform tasks that require precise timing or event counting.
the silicon controled rectifier with diagram.pptxyogeshkute7
Silicon controlled rectifiers (SCRs) are thyristor devices that can control large amounts of power using low control power. SCRs have three terminals - anode, cathode, and gate. Applying a positive pulse to the gate turns on the SCR when the anode is positive with respect to the cathode. SCRs are turned off by reducing the anode current below the holding current. SCRs are commonly used in power electronics and have applications in AC or DC power control systems.
The UJT firing circuit uses a unijunction transistor (UJT) as a relaxation oscillator to produce sharp repetitive gate pulses for thyristors, reducing power dissipation in the gate circuit compared to R-firing and RC-firing circuits. The UJT starts conducting when the capacitor voltage reaches its peak voltage VP, causing the capacitor to discharge. It turns off once the capacitor voltage decreases to the UJT's valley voltage VV, after which the capacitor recharges and the process repeats to produce pulses that fire the thyristor. Adjusting the variable resistor RV varies the capacitor charging time and thus controls the firing angle.
The document discusses various types of power semiconductor devices used in power electronics. It covers power diodes, power transistors including BJTs, MOSFETs, IGBTs, and SITs. It also discusses thyristors such as SCRs, triacs, GTOs, and their characteristics. The key devices covered in detail include their structure, V-I characteristics, switching characteristics, and applications. Comparisons are made between different power devices like BJTs and MOSFETs, and IGBTs. Triggering methods for thyristors such as forward voltage, gate, dv/dt, temperature and light triggering are also summarized.
This receipt acknowledges a donation of Rs. 1500 from Mr. Yogesh Kute at an address in Dhule, Maharashtra to The Art of Living charitable trust in Bengaluru. The donation was made via online transfer on August 4, 2023 and is referenced by transaction ID artofliving-16911295243762258-1.
The document discusses computer system components and buses. It can be summarized as:
- A computer system consists of a processor, memory, and input/output devices that communicate via buses. Buses allow different components to transfer data and instructions simultaneously rather than having to transfer one item at a time.
- There are different types of buses that serve different purposes. The main buses are data buses that transfer data, address buses that identify memory locations, and control buses that coordinate activities. Wider buses allow more data to be transferred at once, improving performance.
- Buses can be internal, connecting components inside the computer case, or external, connecting to peripheral devices. The bus structure including lines for data, addresses
basic power electronics devices chapter1.ppt.pdfyogeshkute7
This document provides an overview of power electronic devices. It discusses the basic concepts including classifications of devices as uncontrolled, half-controlled, or fully-controlled. Power diodes are introduced as an example uncontrolled device. Their structure and operation as a PN junction is explained. Construction details are provided for practical power diodes used in power electronics applications.
This document provides instructions for creating and editing spreadsheets as well as creating charts in spreadsheets. It explains that creating a spreadsheet involves entering labels, values, and formulas. It also notes that you can enter data the same as in a word document and should save your work often. The document includes steps for highlighting data, inserting a chart, using the chart wizard to select the chart type and layout, and personalizing the finished chart. It aims to demonstrate the basic functions of creating, editing, and visualizing data in spreadsheets.
Presentation of IEEE Slovenia CIS (Computational Intelligence Society) Chapte...University of Maribor
Slides from talk presenting:
Aleš Zamuda: Presentation of IEEE Slovenia CIS (Computational Intelligence Society) Chapter and Networking.
Presentation at IcETRAN 2024 session:
"Inter-Society Networking Panel GRSS/MTT-S/CIS
Panel Session: Promoting Connection and Cooperation"
IEEE Slovenia GRSS
IEEE Serbia and Montenegro MTT-S
IEEE Slovenia CIS
11TH INTERNATIONAL CONFERENCE ON ELECTRICAL, ELECTRONIC AND COMPUTING ENGINEERING
3-6 June 2024, Niš, Serbia
Batteries -Introduction – Types of Batteries – discharging and charging of battery - characteristics of battery –battery rating- various tests on battery- – Primary battery: silver button cell- Secondary battery :Ni-Cd battery-modern battery: lithium ion battery-maintenance of batteries-choices of batteries for electric vehicle applications.
Fuel Cells: Introduction- importance and classification of fuel cells - description, principle, components, applications of fuel cells: H2-O2 fuel cell, alkaline fuel cell, molten carbonate fuel cell and direct methanol fuel cells.
CHINA’S GEO-ECONOMIC OUTREACH IN CENTRAL ASIAN COUNTRIES AND FUTURE PROSPECTjpsjournal1
The rivalry between prominent international actors for dominance over Central Asia's hydrocarbon
reserves and the ancient silk trade route, along with China's diplomatic endeavours in the area, has been
referred to as the "New Great Game." This research centres on the power struggle, considering
geopolitical, geostrategic, and geoeconomic variables. Topics including trade, political hegemony, oil
politics, and conventional and nontraditional security are all explored and explained by the researcher.
Using Mackinder's Heartland, Spykman Rimland, and Hegemonic Stability theories, examines China's role
in Central Asia. This study adheres to the empirical epistemological method and has taken care of
objectivity. This study analyze primary and secondary research documents critically to elaborate role of
china’s geo economic outreach in central Asian countries and its future prospect. China is thriving in trade,
pipeline politics, and winning states, according to this study, thanks to important instruments like the
Shanghai Cooperation Organisation and the Belt and Road Economic Initiative. According to this study,
China is seeing significant success in commerce, pipeline politics, and gaining influence on other
governments. This success may be attributed to the effective utilisation of key tools such as the Shanghai
Cooperation Organisation and the Belt and Road Economic Initiative.
Optimizing Gradle Builds - Gradle DPE Tour Berlin 2024Sinan KOZAK
Sinan from the Delivery Hero mobile infrastructure engineering team shares a deep dive into performance acceleration with Gradle build cache optimizations. Sinan shares their journey into solving complex build-cache problems that affect Gradle builds. By understanding the challenges and solutions found in our journey, we aim to demonstrate the possibilities for faster builds. The case study reveals how overlapping outputs and cache misconfigurations led to significant increases in build times, especially as the project scaled up with numerous modules using Paparazzi tests. The journey from diagnosing to defeating cache issues offers invaluable lessons on maintaining cache integrity without sacrificing functionality.
TIME DIVISION MULTIPLEXING TECHNIQUE FOR COMMUNICATION SYSTEMHODECEDSIET
Time Division Multiplexing (TDM) is a method of transmitting multiple signals over a single communication channel by dividing the signal into many segments, each having a very short duration of time. These time slots are then allocated to different data streams, allowing multiple signals to share the same transmission medium efficiently. TDM is widely used in telecommunications and data communication systems.
### How TDM Works
1. **Time Slots Allocation**: The core principle of TDM is to assign distinct time slots to each signal. During each time slot, the respective signal is transmitted, and then the process repeats cyclically. For example, if there are four signals to be transmitted, the TDM cycle will divide time into four slots, each assigned to one signal.
2. **Synchronization**: Synchronization is crucial in TDM systems to ensure that the signals are correctly aligned with their respective time slots. Both the transmitter and receiver must be synchronized to avoid any overlap or loss of data. This synchronization is typically maintained by a clock signal that ensures time slots are accurately aligned.
3. **Frame Structure**: TDM data is organized into frames, where each frame consists of a set of time slots. Each frame is repeated at regular intervals, ensuring continuous transmission of data streams. The frame structure helps in managing the data streams and maintaining the synchronization between the transmitter and receiver.
4. **Multiplexer and Demultiplexer**: At the transmitting end, a multiplexer combines multiple input signals into a single composite signal by assigning each signal to a specific time slot. At the receiving end, a demultiplexer separates the composite signal back into individual signals based on their respective time slots.
### Types of TDM
1. **Synchronous TDM**: In synchronous TDM, time slots are pre-assigned to each signal, regardless of whether the signal has data to transmit or not. This can lead to inefficiencies if some time slots remain empty due to the absence of data.
2. **Asynchronous TDM (or Statistical TDM)**: Asynchronous TDM addresses the inefficiencies of synchronous TDM by allocating time slots dynamically based on the presence of data. Time slots are assigned only when there is data to transmit, which optimizes the use of the communication channel.
### Applications of TDM
- **Telecommunications**: TDM is extensively used in telecommunication systems, such as in T1 and E1 lines, where multiple telephone calls are transmitted over a single line by assigning each call to a specific time slot.
- **Digital Audio and Video Broadcasting**: TDM is used in broadcasting systems to transmit multiple audio or video streams over a single channel, ensuring efficient use of bandwidth.
- **Computer Networks**: TDM is used in network protocols and systems to manage the transmission of data from multiple sources over a single network medium.
### Advantages of TDM
- **Efficient Use of Bandwidth**: TDM all
Using recycled concrete aggregates (RCA) for pavements is crucial to achieving sustainability. Implementing RCA for new pavement can minimize carbon footprint, conserve natural resources, reduce harmful emissions, and lower life cycle costs. Compared to natural aggregate (NA), RCA pavement has fewer comprehensive studies and sustainability assessments.
A SYSTEMATIC RISK ASSESSMENT APPROACH FOR SECURING THE SMART IRRIGATION SYSTEMSIJNSA Journal
The smart irrigation system represents an innovative approach to optimize water usage in agricultural and landscaping practices. The integration of cutting-edge technologies, including sensors, actuators, and data analysis, empowers this system to provide accurate monitoring and control of irrigation processes by leveraging real-time environmental conditions. The main objective of a smart irrigation system is to optimize water efficiency, minimize expenses, and foster the adoption of sustainable water management methods. This paper conducts a systematic risk assessment by exploring the key components/assets and their functionalities in the smart irrigation system. The crucial role of sensors in gathering data on soil moisture, weather patterns, and plant well-being is emphasized in this system. These sensors enable intelligent decision-making in irrigation scheduling and water distribution, leading to enhanced water efficiency and sustainable water management practices. Actuators enable automated control of irrigation devices, ensuring precise and targeted water delivery to plants. Additionally, the paper addresses the potential threat and vulnerabilities associated with smart irrigation systems. It discusses limitations of the system, such as power constraints and computational capabilities, and calculates the potential security risks. The paper suggests possible risk treatment methods for effective secure system operation. In conclusion, the paper emphasizes the significant benefits of implementing smart irrigation systems, including improved water conservation, increased crop yield, and reduced environmental impact. Additionally, based on the security analysis conducted, the paper recommends the implementation of countermeasures and security approaches to address vulnerabilities and ensure the integrity and reliability of the system. By incorporating these measures, smart irrigation technology can revolutionize water management practices in agriculture, promoting sustainability, resource efficiency, and safeguarding against potential security threats.
A SYSTEMATIC RISK ASSESSMENT APPROACH FOR SECURING THE SMART IRRIGATION SYSTEMS
Online Lecture fpe.pptx
1. Fundamental of Power Electronics
(FPE)
Class:- EE3I
Date:-
07/09/2020
BY
y.R.Kute
2. Power Electronics:- Power Electronics
is the branch of electrical
Engineering that deals with control
and conversion of Electric Power
Class:- EE3I
Date:-
07/09/2020
• Electrical Engineering deals with
very large power (Voltage and
Current)
• Electronics Engineering deals with
very low voltage (Say 5Volt or 12
Volt)
Power Electronic makes use of Solid state
devices (Semiconductor Devices) for control
and conversion)
3. Power Electronics Basically deals with
Control and Conversion of Electric
Power
Class:- EE3I
Date:-
07/09/2020
Control:- Power Electronic Devices are
used for Controlling Electric Power from
Source to load
Eg:- Fan Speed Regulator
Conversion:- This deals with conversion of
Electric Power from One form to other
Eg:- Rectifier, Inverter, Chopper,
Cycloconverter
5. Applications of Power
Electronics
Class:- EE3I
Date:-
07/09/2020
1. Power supply for Battery operated
vehicles
2. In induction Heating applications
3. In Railway Locomotives
4. Washing machine, Dryers, Air
conditioning
5. In fan Regulator , Light dimmer
application
6. In motor control application for
controlling AC and DC motors.
8. P and N Type
o f
Semiconductors
Class:- EE3I
Date:-
07/09/2020
P type of Semiconductor is formed by adding
/Doppping trivalent impurity to Semiconductor
(Si or Ge)
P type of impurities are.. Boron, Gallium, Aluminum,
Indium
N type of Semiconductor is formed by
adding/Dopping Penta valent impurity to
Semiconductor (Si or Ge)
N type of impurities are…Phosphorus, Antimony,
Arsenic, Bismuth
N-Type has
Electrons
P - Type has
Holes
1
1
9. Forward and Reverse
Bias
Class:- EE3I
Date:-
07/09/2020
Forward Bias –
On state
P terminal
+Ve
N terminal -
Ve
Reverse Bias –
On
state
P terminal -
Ve
N terminal
+Ve
+
+
-
-
Note:- Current Flows through Device in
Forward Bias
Note:- No Current Flows through Device in
Reverse Bias
10. SCR Special
Features
Class:- EE3I
Date:-
07/09/2020
1. It is four layer Three terminal device
2. Gate Terminal is used to turn on the
3. It can handle very large amount of
voltage, current and power.
4. It can be easily turned on with Gate
Terminal.
5. Power Delivered to load can be easily
controlled with SCR
12. V-I characteristics of
SCR
Class:- EE3I
Date:-
07/09/2020
V-I characteristics
of SCR is divided
into three states
1. Forward Blocking
State
2. Forward
Conduction State
3. Reverse Blocking
State
•
13. V-I characteristics of
SCR
Class:- EE3I
Date:-
07/09/2020
Forward Blocking
State:-
+
-
+ -
(I)
(V)
Vbo
Forward
Blocking
State
0
Junction J1:- Forward
Bias
J2:-
Reverse Bias
J3:-
Forward Bias
Small
Leakage
Current
18. Important
Definition
Class:- EE3I
Date:-
14/09/2020
1. Forward Break over voltage (Vbo):-
Maximum voltage applied across SCR in forward blocking state
without initiating forward condition is called as Forward Break
over voltage(Vbo)
2. Reverse Break over voltage (Vbr):-
Voltage across SCR in Reverse Blocking state at which device
enters into Breakdown.
3. Forward Leakage Current
Small current flowing through SCR in forward Blocking
state due to minority carrier is called as Forward Leakage
Current . It is very small of the order of nano amp or micro
amp
19. Important
Definition
Class:- EE3I
Date:-
14/09/2020
4. Holding Current (IH) :-
It represent minimum current that can flow through SCR and
can hold it in On state. When current becomes less than Holding
current SCR turns into OFF state.
5. Latching Current (IL)
It represents Minimum current that must flow through
SCR to latch into On state. It is always greater than Holding
Current.
6. On State Voltage :-
Voltage across SCR when it enters into forward conduction
state. It is very low of the order of 1Volt or 1.5 volt
21. Class:- EE3I
Date:-
16/09/2020
Two Transistor Analogy of
SCR
Ia- Anode Current
Ig- Gate Current
Ik- Cathode Current
Ia=Emitter current of PNP transistor
Ig=Base current of NPN transistor
Ik=Emitter current of NPN transistor
22. Class:- EE3I
Date:-
16/09/2020
Two Transistor Analogy of
SCR
IA- Anode Current
ICO1- Leakage current of PNP
transistor
ICO2- Leakage current of NPN
transistor
α1 - Common base current gain of
PNP transistor
α2 - Common base current gain of
NPN transistor
23. Symbol and
Characteristics of Power
Semiconductor Devices
Class:- EE3I
Date:-
16/09/2020
1. SCR (Silicon Controlled Rectifier)
2. LASCR (Light Activated Silicon Controlled Rectifier)
25. Turn on Methods
of SCR
Class:- EE3I
Date:-
28/09/2020
Process of turning on SCR is also called as
Triggering of SCR or Firing of SCR
• Forward Voltage Triggering
• Gate Triggering
• dv/dt Triggering
• Temperature Triggering
• Light Triggering
Turn on Methods of SCR are as follows
26. Turn on Methods
of SCR
Class:- EE3I
Date:-
28/09/2020
1. Forward Voltage Triggering
In this method Gate current IG=0 , Anode is
at positive potential w.r.t. cathode , If anode
voltage is increased to break over voltage VBO
,
SCR turns into On condition. This method is
called as Forward Voltage Triggering. In actual
practice this method is not used as it requires
large anode to cathode voltage and also large
current Generation occurs.
It may cause damage to the thyristor. In
this method avalanche breakdown occurs
+
-
27. Turn on Methods
of SCR
Class:- EE3I
Date:-
28/09/2020
2. Gate Triggering
Gate Triggering is a simple reliable and
efficient method. At a desired moment of
turn- On suitable positive voltage is applied to
Gate terminal. This result in gate current. As
the value of Gate Current (IG ) increases
required anode to cathode Voltage decreases.
Gate current of magnitude 20mA to 200mA
is applied.
28. Class:- EE3I
Date:-
28/09/2020
3. dv/dt Triggering
When anode to cathode voltage is positive
outer junction J1 and J3 get forward biased
and inner junction J2 reverse biased Junction
behaves as a Capacitor
Charging Current of Capacitor depends upon rate
of rise of forward Voltage
If forward Voltage is suddenly applied then
Charging current would be large. Due to this
phenomenon SCR enters into Turn On state.
However this dv/dt turn On has to be avoided
Rate of change of applied voltage is kept below the
specified rate.
J1
J2
J3
29. Class:- EE3I
Date:-
28/09/2020
4. Light Triggering
Light can be used to turn On SCR
by causing Breakdown of the junction
J2 with junction J1 and J3 forward
Biased
In Light triggered SCR gate
region is made up of Light sensitive
material, When a ray of light of
suitable intensity and wavelength is
incident on the Gate junction of SCR
Gate current increases it makes
forward bias SCR to enter into On state
Light Radiation
30. Turn on Methods
of SCR
Class:- EE3I
Date:-
28/09/2020
4. Thermal Triggering
Width of depletion layer of SCR
decreases with increase in junction
temperature
Therefore in SCR when anode
voltage is nearer to breakdown voltage
device is triggered by increasing
junction temperature
By increasing junction temperature
reverse bias junction collapses thus
device starts to conduct.
Temp.
31. Turn OFF Methods
of SCR
Class:- EE3I
Date:-
28/09/2020
Transition of SCR from On state to Off state is called as
Turn off method of SCR
Process of turning off SCR is also called as Commutation
of SCR
Time required to turn SCR Off from On state is Called
as Turn off Time of SCR
SCR can be turned off / Commutation can be achieved by
1. Reducing current flowing through SCR below Holding current by
decreasing Forward Voltage
2. Reducing current flowing through SCR below Holding current by
increasing load impedance
3. By reverse voltage across SCR forcing zero current to flow
through SCR
32. Types of
Commutation
Class:- EE3I
Date:-
28/09/2020
Commutation is basically classified into two types
Natural commutation
-> In this process of commutation No external circuit is applied, to
turn off SCR, SCR turns off at its own.
Eg. Class F commutation
Forced commutation
-> In this process of commutation external circuit is applied, to turn it
off. SCR doesn’t turns off at its own.
Eg. Class A, Class B, Class C, Class D, Class E commutation
33. Class:- EE3I
Date:-
28/09/2020
Classification of Commutation
Techniques
Natural commutation
1. Class F commutation (AC Line Commutation)
Forced commutation
1. Class A Commutation (Resonant Commutation)
2. Class B Commutation (Self Commutation)
3. Class C Commutation (Complimentary Commutation)
4. Class D Commutation (Auxiliary Commutation)
5. Class E Commutation (External Pulse Commutation)
34. Class:- EE3I
Date:-
28/09/2020
This method of Commutation is also called as Resonant Commutation
Commutation component L and C are connected in series or parallel
with the load
In this technique Current through L and C components is reduced to
natural zero due to L and C component
1. Class A Commutation ( Resonant Commutation)
35. Class:- EE3I
Date:-
28/09/2020
This method of Commutation is also called as Self Commutation
Here, SCR is turned off by Resonating L and C component, but they do not carry
load current.
Here, initially capacitor C charges with upper plate positive, As soon as SCR is
turned on capacitor discharges through SCR and starts charging in opposite
direction
Making upper plate of capacitor negative and lower plate positive, thus negative
voltage is applied across SCR which in turns turns it off
2. Class B Commutation ( Self Commutation )
37. Class:- EE3I
Date:-
28/09/2020
This method of Commutation is also called as Complimentary Commutation
This method consist of main thyristor T1 and complimentary Thyristor T2 in
parallel with T1
Triggering of One SCR turns off other SCR and vice versa
When SCR T1 is turned on current flows through Load 1 and T1 also current flows
through Load2- Capacitor C- T1
When T2 is turned on Voltage across capacitor appears across SCR which is
negative voltage turns it into off State
3. Class C Commutation (Complimentary Commutation )
40. Class:- EE3I
Date:-
28/09/2020
This method of Commutation is also called as Auxiliary Commutation.
Here, commutation elements are Capacitor, Inductor and Auxiliary Thyristor.
As shown in circuit T1 is main SCR and T2 is auxiliary SCR.
Here initially T1 is turned on thus capacitor C charges with polarity as upper
plate negative and lower plate positive.
In order to turn off SCR T1, SCR T2 is turned ON thus voltage of Capacitor.
appears across SCR T1 turning it off, as capacitor voltage of reveres polarity is
applied.
4. Class D Commutation (Auxiliary Commutation )
-
+
41. Class:- EE3I
Date:-
28/09/2020
This method of Commutation is also called as External Pulse Commutation.
Here reverse voltage is applied to the current carrying SCR from external pulse
source.
Pulse transformer is used to apply commutating pulse.
Voltage at secondary of pulse transformer appears across SCR T1 as reverse
voltage and turns it OFF.
5. Class E Commutation
(External Pulse Commutation)
42. Class:- EE3I
Date:-
28/09/2020
It is AC line Commutation method.
If supply is Alternating voltage, load current flows during the positive half cycle.
During negative half cycle the SCR will turn OFF.
Duration of negative half cycle must be greater than turn off time of SCR.
It is natural commutation, It doesn’t requires any additional Commutation circuit.
This method is used in controlled Rectifiers.
Class F Commutation
(AC Line Commutation)
43. Class:- EE3I
Date:-
12/10/2020
SCR Protection Circuits
1. Over voltage protection.
2. Over current protection.
3. High dv/dt protection.
4. High di/dt protection.
5. Thermal protection.
44. Class:- EE3I
Date:-
12/10/2020
1. Over voltage protection
Over voltage across SCR is one of the cause
of failure of SCR
This can be avoided by using
1. Snubber circuit
2. Non-Linear Device
47. Class:- EE3I
Date:-
12/10/2020
2. Over Current protection
Over Current through SCR is one of the cause
of failure of SCR
This can be avoided by using Circuit Breakers,
Fast Responding Fuse
48. Class:- EE3I
Date:-
12/10/2020
3. High dv/dt protection
High dv/dt through SCR is one of the cause of
failure of SCR
This can be avoided by using Snubber Circuit
49. Class:- EE3I
Date:-
12/10/2020
4. High di/dt protection
High di/dt through SCR is one of the cause of
failure of SCR
This can be avoided by using inductor Circuit
50. Class:- EE3I
Date:-
12/10/2020
5. Thermal Protection of SCR
High Temperature of SCR is one of the cause
of failure of SCR
This can be avoided by using Heat sink Circuit
58. Class:- EE3I
Date:-
23/12/2020
Phase Controlled Rectifiers:-
Uncontrolled Rectifiers:- The rectifiers using
diodes operates on AC supply voltage ,
Which converts A.C. Voltage into fixed dc
voltage
Controlled Rectifiers:- The rectifiers
using SCR’s operates on AC supply
voltage , Which converts A.C. Voltage
into variable dc voltage by varying firing
angle (α)
59. Class:- EE3I
Date:-
13/01/2021
Phase Controlled Rectifiers:-
Phase Control:- Controlled Rectifiers converts
A.C. Voltage into Variable DC voltage. They
makes use of Technique called as phase angle
control to change firing angle or delay angle or
Phase angle.
Firing Angle (α) :- In AC circuits we can turn on
the SCR with the help of gate triggering circuits
at any angle with respect to applied voltage.
• Angle with respect applied input voltage at
which SCR is turned on is called as Firing Angle
(α)
• Firing angle can have any value between 0 to 180
degree
Conduction Angle:- Angle for which SCR is in
conduction state is called as conduction angle
Conduction angle=(180- α)
60. Class:- EE3I
Date:-
13/01/2021
Classification of Phase
Controlled Rectifiers:-
1Φ Controlled
Rectifier
Half wave Controlled
Rectifier
Full wave Controlled
Rectifier
Mid Point Converter
Bridge Converter
Full Converter
(4 SCR’s)
Semi Converter
(2 Diode & 2SCR’s)
63. Class:- EE3I
Date:-
13/01/2021
Inductive load
Inductor doesn’t like change, in voltage (It opposes
Change).
It tries to maintain same circuit condition.
In case of controlled rectifier, Inductor reverses polarity
of voltage across it in order to maintain same circuit
conditions.
When it reverses its polarity, It discharge the energy
stored in magnetic field. Because of that SCR remains in On state even
in negative half cycle.
66. Class:- EE3I
Date:-
13/01/2021
Free wheeling diode
Free wheeling diode is connected in parallel with Inductive load
It doesn’t allows inductor to reverse its polarity
Energy stored in inductor is dissipated through Free wheeling
diode and resistor R.
It improves power factor
Load voltage doesn’t goes negative due to presence of free
wheeling diode