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Power semiconducting switches
- 1. POWER SEMICONDUCTING SWITCHES DeliveredBy : Indubhushan Kumar Assistant Professor -II Department of Electrical Engineering JECRC University , Jaipur
- 2. OVERVIEW Power SemiconductingSwitch : Introduction Silicon Control Rectifier Thyristor Characteristics Protection Applications
- 3. Power Semiconductor Switches oBroadly Classified into 3-Types : Power Diodes : Power Transistors : Thyristors o Used to Control & Conversion of Electric Power o Rated at Power Level rather than Signal Level o Fast dynamic response o Small Size & Less Maintenance o Highly Efficient & Reliable
- 5. Thyristors Family Siliconcontrolled switch (SCR) : Unidirectional , 7000 V/ 5000 A , 1kHz Gate-turnoff thyristor (GTO) : Unidirectional , 5000V/ 3000A , 2kHz Triac : Bidirectional , 1200 V/ 1000 A, 0.5 kHz Silicon induction Thyristor (SITH) : Unidirectional , 2500 V/ 500 A , 100kHz Mos-controlled switch (MCT) : Unidirectional , 1200 V/ 40 A, 20 kHz ASCR /RCT : Bidirectional , 2500 V/ 400 A , 2 kHz LASCR : Unidirectional , 6000 V/ 3000 A, 1 kHz
- 6. Silicon Controlled Rectifier Most popular of thyristor family Commonly used in power electronic applications. 3 terminals (Anode , cathode ,Gate ) , 4-layers switch Turned on by applying +ve gate signal when anode is +ve w.r.t cathode SCR is turned off by interrupting anode current
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- 8. SCR Triggering (Turn-on)Methods The turning on Process of the SCR is known as Triggering. In other words, turning the SCR from Forward-Blocking state to Forward-Conduction state is known as Triggering.
- 9. SCR Triggering Method Forward Voltage Triggering Thermal or Temperature Triggering Radiation or Light triggering dv/dt Triggering Gate Triggering
- 10. Forward Voltage Triggering In this mode, an additional forward voltage is applied between anode and cathode When the anode terminal is positive with respect to cathode(VAK) , Junction J1 and J3 is forward biased and junction J2 is reverse biased. No current flows due to depletion region in J2 is reverse biased (except leakage current) As VAK is further increased, at a voltage VBO (Forward Break Over Voltage) the junction J2 undergoes avalanche breakdown and so a current flows and the device tends to turn ON(even when gate is open)
- 11. Thermal Triggering Thewidth of depletion layer of SCR decreases with increase in junction temperature. when anode voltage is very near its breakdown voltage, the device is triggered by increasing the junction temperature. By increasing the junction temperature the reverse biased junction collapses thus the device starts to conduct.
- 12. Light Triggering Forlight triggered SCRs a special terminal niche is made inside the inner P layer instead of gate terminal When light is allowed to strike this terminal, free charge carriers are generated. When intensity of light becomes more than a normal value, thyristor starts conducting This type of SCRs are called as LASCR
- 13. dv/dt Triggering Whenthe device is forward biased, J1 and J3 are forward biased, J2 is reverse biased. Junction J2 behaves as a capacitor, due to the charges existing across the junction. If voltage across the device is V, the charge by Q and capacitance by C then, ic = dQ/dt , Q = CV ic = d(CV) / dt = C. dV/dt + V. dC/dt ( as dC/dt = 0) ic = C.dV/dt Therefore when the rate of change of voltage across the device becomes large, the device may turn ON, even if the voltage across the device is small.
- 14. Gate Triggering Method Most widely used SCR triggering method Applying a positive voltage between gate and cathode can Turn ON a forward biased thyristor When a positive voltage is applied at the gate terminal, charge carriers are injected in the inner P-layer, thereby reducing the depletion layer thickness As the applied voltage increases, the carrier injection increases, therefore the voltage at which forward break-over occurs decreases
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- 16. Thyristor Protection Forreliable operation of SCR, it should be operated within the specific ratings SCRs are very delicate devices and so they must be protected against abnormal operating conditions. Various protection of SCR are di/dt Protection dv/dt Protection Over voltage Protection Over Current Protection Gate Protection
- 17. di/dt Protection localhot spots is created near the gate due to increased current density. This localised heating may damage the device. This is done by means of connecting an inductor in series with the thyristor.
- 18. dv/dt Protection Weknow that iC=C.dv/dt. ie, when dv/dt is high, iC is high. This high current(iC) may turn ON SCR even when gate current is zero. This is called as dv/dt turn ON or false turn ON of SCR To protect the thyristor against false turn ON or against high dv/dt a "Snubber Circuit" is used.
- 19. Overvoltage & OverCurrentProtection Overvoltage may result in false turn ON of the device (or) damage the device. The effect of overvoltage is reduced by using Snubber circuits and Non-Linear Resistors called Voltage Clamping Devices In an SCR due to over-current, the junction temperature exceeds the rated value and the device gets damaged. Over-current is interrupted by conventional fuses and circuit breakers
- 20. Gate Protection o Gatecircuit should be protected against Overvoltage & Overcurrent o Protection against overvoltage is achieved by connecting Zener Diode across it o A resistance is connected in series with Gate Circuit used to protect against Overcurrent o Protection against Noise is done by connecting R-C across it.
- 21. Applications Traction Controlof Electric Vehicles Switching Purpose HVDC Transmission Lines Excitation System Textile Miles Evevators Aerospace Trolley Bus etc ..
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