- The document summarizes key concepts about intrinsic and extrinsic semiconductors. - It defines intrinsic semiconductors as undoped semiconductors where the number of electrons and holes are equal. Current in intrinsic semiconductors is caused by both electron and hole flow. - Extrinsic semiconductors are doped, causing an imbalance between electrons and holes. N-type are doped with donor atoms, increasing free electrons. P-type are doped with acceptor atoms, increasing holes.

1. R.M.K COLLEGE OF ENGINEERING AND
TECHNOLOGY
DEPARTMENT OF ECE
EC8252-ELECTRONIC DEVICES
SECOND SEMESTER-I YEAR- (2020-2024 BATCH)
Faculty Handled By:
Mrs.P.Sivalakshmi AP/ECE
Section: A & B
SESSION:4
DATE: 19.04.2021

2. CONTENTS:
Intrinsic Semiconductor
Flow of charge carriers
Fermi level of Intrinsic semiconductor
Bands in Semiconductor
Fermi Level of Extrinsic semiconductor Materials
Activity Based learning

3. Intrinsic semiconductor is also called as undoped semiconductor or I-type semiconductor. In intrinsic
semiconductor the number of electrons in the conduction band is equal to the number of holes in the
valence band. Therefore the overall electric charge of a atom is neutral.
Intrinsic semiconductor
In conductors current is caused by only motion of
electrons but in semiconductors current is caused by both
electrons in conduction band and holes in valence band.
Current that is caused by electron motion is called
electron current and current that is caused by hole
motion is called hole current. Electron is a negative
charge carrier whereas hole is a positive charge carrier.
At absolute zero temperature intrinsic semiconductor
behaves as insulator
The total current in intrinsic semiconductor is the sum of hole and
electron current.
Total current = Electron current + Hole current
I = Ihole+ Ielectron

5. • The electric current that flows from positive terminal of battery to the negative terminal of battery is called
conventional current. The conventional current direction is in the same direction of flow of holes but opposite
to the direction of flow of free electrons.
• When Ben Franklin started experimenting with the electricity, he assumed that electric current (positive
charge carriers) flow from positive to negative. But later world realized that it was wrong. Actually electric
current flows from negative terminal to positive terminal of battery.
The flow of charge carriers is called current.
• The number of electrons per unit volume in the conduction band
or the number of holes per unit volume in the valence band is
called intrinsic carrier concentration.
• The number of electrons per unit volume in the conduction band
is called electron-carrier concentration and the number of
holes per unit volume in the valence band is called as hole-
carrier concentration.
• In an intrinsic semiconductor, the number of electrons generated
in the conduction band is equal to the number of holes
generated in the valence band.
• Hence the electron-carrier concentration is equal to the hole-
carrier concentration.
It can be written as,
ni = n = p
Where, n = electron-carrier concentration
P = hole-carrier concentration
and ni = intrinsic carrier concentration

6. The hole concentration in the valence band is given as
The electron concentration in the conduction band is given as
Where KB is the Boltzmann constant
T is the absolute temperature of intrinsic semiconductor
Nc is the effective density of states in conduction band.
Nv is the effective density of states in valence band.
Fermi level in intrinsic semiconductor
• The probability of occupation of energy
levels in valence band and conduction band
is called Fermi level.
• The probability of occupation of energy
levels in conduction band and valence band
are equal.
The Fermi level for intrinsic semiconductor is given as,

7. Bands for Doped Semiconductors
Fermi level in extrinsic semiconductor
In extrinsic semiconductor, the number of electrons in the conduction band and the
number of holes in the valence band are not equal. Hence, the probability of occupation
of energy levels in conduction band and valence band are not equal. Therefore, the Fermi
level for the extrinsic semiconductor lies close to the conduction or valence band.
The Fermi Level is the energy
level which is occupied by the
electron orbital at temperature
equals 0 K. The level of
occupancy determines the
conductivity of different materials
Fermi level in n-type semiconductor
In n-type semiconductor pentavalent impurity is
added. Each pentavalent impurity donates a free
electron. The addition of pentavalent impurity
creates large number of free electrons in the
conduction band.

8. • At room temperature, the number of electrons in the
conduction band is greater than the number of holes in the
valence band.
• Hence, the probability of occupation of energy levels by
the electrons in the conduction band is greater than the
probability of occupation of energy levels by the holes in
the valence band.
• This probability of occupation of energy levels is
represented in terms of Fermi level.
• Therefore, the Fermi level in the n-type semiconductor
lies close to the conduction band.
The Fermi level for n-type semiconductor is given as
here EF is the Fermi level.
EC is the conduction band.
KB is the Boltzmann constant.
T is the absolute temperature.
NC is the effective density of states in the conduction band.
ND is the concentration of donar atoms.

9. Fermi level in p-type semiconductor
In p-type semiconductor trivalent impurity is added. Each trivalent
impurity creates a hole in the valence band and ready to accept an
electron. The addition of trivalent impurity creates large number of holes
in the valence band.
• At room temperature, the number of holes in the valence band is
greater than the number of electrons in the conduction band.
• Hence, the probability of occupation of energy levels by the holes in
the valence band is greater than the probability of occupation of
energy levels by the electrons in the conduction band.
• This probability of occupation of energy levels is represented in terms
of Fermi level.
• Therefore, the Fermi level in the p-type semiconductor lies close to the
valence band.
The Fermi level for p-type semiconductor is given as
Where NV is the effective density of states in the valence band.
NA is the concentration of acceptor atoms.

10. Majority & Minority Carriers
Negative charge carriers
• The negative charge carriers such as free electrons are the charge carriers that carry negative charge with
them while moving from one place to another place.
• Free electrons are the electrons that are detached from the parent atom and moves freely from one place
to another place.
Positive charge carriers
• The positive charge carriers such as holes are the charge carriers that carry positive charge with them
while moving from one place to another place.
• Holes are the vacancies in valence band that moves from one place to another place within the valence
band.
• In N-Type material:
Majority carriers=Electrons
Minority Carriers=holes
• In P-Type material:
Majority carriers= holes
Minority Carriers=Electrons
What is charge carrier?
In the similar way, particles such as free
electrons and holes carry the charge or electric
current from one place to another place.

11. Pre-Requisite Knowledge
Acquaint test
(Assessment component: A4-Quiz)
(Mode of Delivery: MD2)
Insulator
Conductor
Conductor
Insulator
Conductor
Conductor
Conductor
Insulator

12. Pre-Requisite Knowledge
Acquaint test
(Assessment component: A4-Quiz)
(Mode of Delivery: MD2)

13. Pre-Requisite Knowledge
Acquaint test
(Assessment component: A4-Quiz)
(Mode of Delivery: MD2)

14. Pre-Requisite Knowledge Acquaint test
(Assessment component: AC3- Course Seminar)
(Mode of Delivery: MD5-Seminar)
History Of Electronics

15. Quantum Theory of Solids:
https://www.youtube.com/watch?v=ny6fPSibyOo
Application of Schrodinger’s Wave equation
• Electron in Free energy Space
• The Infinite Potential Well
• Potential Barrier-Tunneling Effect
• Triangular Potential Well
• The one-Electron Atom
Donald A Neaman,
―Semiconductor Physics and
Devices‖, Fourth Edition, Tata
Mc GrawHill Inc. 2012.

16. NEXT SESSION:
Conductivity of a semiconductor
Einstein Relationship for Semiconductor
Diffusion Length.
Problems
PN Diode