Device Modeling Report of C3D04060E, SiC SBD, in SPICE PARK by Bee Technologies .

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: C3D04060E
MANUFACTURER: CREE
REMARK: Professional Model
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Circuit Configuration
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
CASE
U1
C3D04060E_P
PIN1
PIN2

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
R1
0.01m
V1
0Vdc
0
U1
C3D04060E_P
V_V1
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V
I(R1)
0A
1.0A
2.0A
3.0A
4.0A
5.0A
6.0A
7.0A
8.0A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
FORWARDCURRENT:IF(A)
FORWARD VOLTAGE: VF(V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IF(A)
VF(V)
Error (%)
Measurement Simulation
0.2 0.9000 0.9009 0.10
0.6 0.9800 0.9776 -0.24
1.0 1.0350 1.0391 0.40
2.0 1.1800 1.1776 -0.20
3.0 1.3100 1.3083 -0.13
4.0 1.4400 1.4356 -0.31
5.0 1.5550 1.5607 0.37
6.0 1.6800 1.6844 0.26
7.0 1.8100 1.8071 -0.16
8.0 1.9300 1.9289 -0.06

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
0
V1
TD = 0
TF = 500ns
PW = 100us
PER = 500us
V1 = 0
TR = 500ns
V2 = 600
V2
0Vdc
U1
C3D04060E_P
V(N16614)
10V 100V5.0V 600V
I(V2)/(600V/500n)
0
20p
40p
60p
80p
100p
120p
140p
Junction Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
0
20
40
60
80
100
120
140
1 10 100 1000
CAPACITANCE:C(pF)
REVERSE VOLTAGE:VR(V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
VR(V)
C (pF)
Error (%)
Measurement Simulation
8 88.000 88.671 0.76
10 80.000 80.070 0.09
20 58.000 56.219 -3.07
50 35.000 35.838 2.39
100 27.500 28.273 2.81
200 24.000 24.696 2.90
400 23.300 23.125 -0.75
600 23.000 22.672 -1.43

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
V1
0Vdc
R1
0.01m
0
U1
C3D04060E_P
V_V1
0V 100V 200V 300V 400V 500V 600V 700V 800V
I(R1)
0A
1uA
2uA
3uA
4uA
5uA
6uA
7uA
8uA
9uA
10uA
Reverse Characteristic
Circuit Simulation Result
Evaluation Circuit

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
0
1
2
3
4
5
6
7
8
9
10
0 100 200 300 400 500 600 700 800
REVERSECURRENT:IR(uA)
REVERSE VOLTAGE：VR(V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
VR(V)
IR(uA)
Error (%)
Measurement Simulation
1 0.0110 0.0107 -2.70
100 0.0140 0.0142 1.51
200 0.0350 0.0341 -2.55
300 0.0450 0.0455 1.06
400 0.0850 0.0853 0.31
500 0.1000 0.0966 -3.37
600 0.4000 0.3979 -0.52
700 3.3000 3.2856 -0.44