This document summarizes a study on the effects of electron radiation on the electrical properties of commercial MOSFETs. Two types of MOSFETs were irradiated with electron beams at doses from 50-250KGy. For both MOSFET types, drain current increased after irradiation due to generated electron-hole pairs. The P-channel MOSFET exhibited negative threshold voltage shifts and the N-channel MOSFET positive shifts, attributed to increased oxide and interface traps respectively. In conclusion, ionization damage degrades MOSFET performance but helps understand failure mechanisms to improve radiation-hardened designs.

1. Dr.Nurul Fadzlin Hasbullah ,Sheik Fareed Ookar Abubakkar
Dr, Yusof Abdullah, Dr. Nor Farahidah Za’bah,
Kulliyyah of Engineering (CIE), International Islamic University Malaysia
Phone: 0361964505, Fax: 0361964488, E-mail:fareedcahcet12@gmail.com, nfadzlinh@iium.edu.my
Poster
ID:
Electron Radiation Effects on The
Electrical Properties of SI
Commercial MOSFET.
IIUM Research, Invention and Innovation Exhibition 2014
Drain current increase in the both the MOSFETs
under electron radiation.
Positive and negative Threshold Voltage shifts
obtained due to oxide traps and interface traps.
Continue to play an important role in the modern
sophisticated electronic applications.
MOSFETs are used in the medical radiotherapy, spacecraft,
military weapons and other radiation environment.
Still be prepared to built more robust in applications
technically.
Main important performance of MOSFET s is to control power
circuits.
MOSFET s performances are degraded after radiation
especially in voltage and current characteristics.
METHODOLOGY
Electrical
Measurements
Electrical
Measurements
Electron beam
Radiation Exposure
(50-250KGy)
Report
Literature Study
Comprehensive analysis of results
Experimental Setup
RESULTS & DISCUSSION
Acknowledgement To understand drain current degradation mechanism
and to built more robust and better design MOSFET
for radiation environment.
CONTRIBUTION
Part number Material Type Application
ZVN3320FTA Silicon P-Substrate Low Power
Amplifying
switching,
Power supply
circuits.
ZVP3310FTA Silicon N-Substrate Amplifying
switching
application, Power
controllers.
MOSFET Model used in the project
MOSFET s (ZVN3320FTA & ZVP3310FT) was chosen
to be irradiated with electron using ALURTRON
(Electron beam irradiation center –ANM)
Significant changes in current and voltage
characteristics were observed in the irradiated devices.
Significant negative threshold voltage shifts were
observed in the P-Channel device. Positive threshold
Voltage shifts were observed in the N-channel devices.
Drain current increased in both P-channel and N-
channel MOSFET due to electron –hole pair generation
ABSTRACT
To Investigate electron radiation effects towards electrical
characteristics of commercial MOSFET.
To analyze the difference in electrical performance on P-
channel and N channel MOSFET.
INTRODUCTION
OBJECTIVES
For Both ZVN3320FTA
& ZVP3310FTA drain
current increased after
electron radiation.
Reason:
Ionization damage
generates more number
of electron –hole pair.
Therefore density of
interface traps and oxide
traps increased .
Positive threshold
voltage shifts observed
in ZVN3320FTA and
Negative threshold
Voltage shifts observed
in ZVP3310FTA
Reason
More number of oxide
traps cause negative
threshold voltage shifts.
More number of
interface traps cause
positive threshold
voltage shifts.
CONCLUSION
I-V Characteristics of ZVN3320FTA
Voltage ( Vds)
0 2 4 6 8 10 12
Current(Ids)
1e-12
1e-11
1e-10
1e-9
1e-8
1e-7
1e-6
1e-5
1e-4
1e-3
1e-2
1e-1
1e+0
Before radiation
50KGy
100KGy
150KGy
200KGy
250KGy
I-V characeteristics of ZVP3310FTA
Voltage (Vds)
-5 -4 -3 -2 -1 0
Current(Ids)
1e-11
1e-10
1e-9
Before radiation
50 KGy
100KGy
150KGy
200KGy
250KGy
Threshold Voltage Vs Dose Level
Dose Level ( KGy)
0 50 100 150 200 250 300
Vth
-8
-6
-4
-2
0
2
4
6
8
ZVP1320FTA
ZVN3320FTA