SPICE MODEL of PC829 in SPICE PARK

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SPICE MODEL of PC829 in SPICE PARK

2. DIODE MODEL Pspice model Model description Parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time BIPOLAR JUNCTION TRANSISTOR MODEL Pspice model Model description parameter NR Reverse Emission Coefficient RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance CJC Zero-bias Collector-Base Junction Capacitance TF Forward Transit Time TR Reverse Transit Time VOLTAGE CONTROLLED VOLTAGE SOURCE MODEL(VCVS) E<Name><(+)Node><(－)Node>VALUE={Expression} E<Name><(+)Node><(－)Node>TABLE={Expression} All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. VOLTAGE CONTROLLED CURRENT SOURCE MODEL(VCCS) E<Name><(+)Node><(－)Node>VALUE={Expression} CURRENT CONTROLLED MODEL(W) Pspice model Model description parameter IOFF Controlling current to Off state ION Controlling current to On state ROFF Off Resistance RON On Resistance All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Input Device Forward Current Characteristics Measurement Simulation Input Device Junction Capacitance Characteristics Measurement Simulation All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Input Device Reverse Recovery Characteristics Measurement trj=196n(s) trb=60n(s) Conditions:Ifwd=Irev=0.04(A),Rl=50 Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. LED IV Curve Characteristics Simulation result 500mA Simulation 100mA 10mA 1.0mA 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V I(I1) V(U6:1) Evaluation Circuit U6 1 8 N00044 open V1 50mAdc I1 2 7 2Vdc R1 3 6 open open 1k 4 5 0 open open PC829 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Comparison Graph Comparison Table Ifwd(A) Vfwd(V) % Error Measurement Simulation 0.001 1.050 1.047 -0.286 0.002 1.080 1.078 -0.185 0.005 1.120 1.126 0.536 0.01 1.170 1.176 0.513 0.02 1.250 1.238 -0.960 0.05 1.350 1.352 0.148 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Transistor Saturation Characteristics Simulation result 160mV Simulation 120mV 80mV 40mV 0s 50ms 100ms V(I2:-) Time Evaluation Circuit U6 open 1 8 N00044 I1 I2 R1 20mAdc 2 7 1mAdc 1k 3 6 open open 0 4 5 open 0 open 0 PC829 Comparison Table Measurement Simulation % Error Vce(sat) (V) 0.100 0.100 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. CTR(Current Transfer Ratio) Characteristics Simulation result Simulation 200 180 160 140 120 100 80 60 40 20 0 1.0mA 10mA 50mA IC(X_U1.X_U1.Q_Q1)/ I(X_U1.X_U1.D_D1)*100 I_I1 Evaluation Circuit V2 V3 0Vdc 0Vdc open U1 1 8 V1 R1 5Vdc I1 2 7 1k 20mAdc 3 6 open open 0 4 5 open open PC829 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Rise Curve Table CTR(%) If(mA) % Error Measurement Simulation 1.000 77.000 76.993 -0.009 2.000 94.000 91.228 -2.949 5.000 115.000 110.149 -4.218 10.000 128.000 124.382 -2.827 14.000 130.000 130.955 0.735 Fall Curve Table CTR(%) If(mA) % Error Measurement Simulation 14.000 130.000 130.955 0.735 20.000 128.000 123.214 -3.739 30.000 120.000 114.436 -4.637 40.000 107.000 104.994 -1.875 47.000 101.000 98.619 -2.357 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. Switching Time Characteristics Simulation result 3.0V 20mA 1 2 2.0V Simulation 10mA 1.0V >> 0V 0A 0s 20us 40us 60us 80us 1 V(U1:7) 2 I(V1) Time Evaluation Circuit V1 0Vdc U1 TD = 0 1 8 RL TF = 10n PW = 20u IF 100 PER = 500u open I1 = 0 2 7 I2 = 20m V2 TR = 10n 3 6 open open 2Vdc R1 1k 4 5 open open 0 PC829 0 0 Comparison Table Vce=2V,RL=100 Measurement Simulation % Error ts (us) 0.210 0.209 -0.476 tf (us) 3.200 3.195 -0.156 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

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