SPICE MODEL of IDT06S60C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDT06S60C
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1

2. Circuit Configuration
U1
IDT06S60C
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2

3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
3

4. Forward Current Characteristics
Circuit Simulation result
18A
16A
14A
12A
10A
8A
6A
4A
2A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDT06S60C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
4

5. Comparison Graph
Circuit Simulation result
18
Measurement
16 Simulation
14
Forword Current, IF (A)
12
10
8
6
4
2
0
0 1 2 3 4
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.5 0.975 0.973 -0.21
1 1.040 1.032 -0.77
2 1.140 1.136 -0.35
5 1.410 1.396 -0.99
10 1.829 1.817 -0.63
18 2.480 2.478 -0.08
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
5

6. Reverse Current Characteristic
Circuit Simulation result
10uA
1.0uA
100nA
10nA
1.0nA
100V 200V 300V 400V 500V 600V
I(U1:K)
V_V1
Evaluation circuit
V2
0
V1 U1
IDT06S60C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
6

7. Comparison Graph
Circuit Simulation result
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
100 1.480E-03 1.415E-03 -4.39
200 5.000E-03 4.928E-03 -1.44
500 5.400E-01 5.177E-01 -4.13
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
7

8. Junction Capacitance Characteristic
Circuit Simulation result
400p
300p
200p
100p
0
100mV 1.0V 10V 100V 1.0KV
I(V2)/(600V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 600
TD = 0 IDT06S60C
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
8

9. Comparison Graph
Circuit Simulation result
400
Measurement
Simulation
300
Capacitance, C (pF)
200
100
0
0.1 1 10 100 1000
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
0.5 294.444 295.458 0.34
1 267.888 269.551 0.62
2 229.722 232.476 1.20
5 175.000 171.979 -1.73
10 132.500 129.250 -2.45
20 98.000 95.580 -2.47
50 66.000 65.314 -1.04
100 51.111 51.239 0.25
200 40.322 42.318 4.95
500 37.111 35.403 -4.60
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
9