The document provides a detailed report on the device modeling of the silicon carbide Schottky diode, part number IDT06S60C, from Infineon, including circuit configurations and parameters. It includes simulation results for forward current, reverse current, and junction capacitance characteristics, along with comparison tables showing measurement versus simulation data. The content is protected by copyright from Bee Technologies Inc. (2011).

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDT06S60C
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1

2. Circuit Configuration
U1
IDT06S60C
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2

3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
3

4. Forward Current Characteristics
Circuit Simulation result
18A
16A
14A
12A
10A
8A
6A
4A
2A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDT06S60C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
4

5. Comparison Graph
Circuit Simulation result
18
Measurement
16 Simulation
14
Forword Current, IF (A)
12
10
8
6
4
2
0
0 1 2 3 4
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.5 0.975 0.973 -0.21
1 1.040 1.032 -0.77
2 1.140 1.136 -0.35
5 1.410 1.396 -0.99
10 1.829 1.817 -0.63
18 2.480 2.478 -0.08
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
5

6. Reverse Current Characteristic
Circuit Simulation result
10uA
1.0uA
100nA
10nA
1.0nA
100V 200V 300V 400V 500V 600V
I(U1:K)
V_V1
Evaluation circuit
V2
0
V1 U1
IDT06S60C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
6

7. Comparison Graph
Circuit Simulation result
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
100 1.480E-03 1.415E-03 -4.39
200 5.000E-03 4.928E-03 -1.44
500 5.400E-01 5.177E-01 -4.13
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
7

8. Junction Capacitance Characteristic
Circuit Simulation result
400p
300p
200p
100p
0
100mV 1.0V 10V 100V 1.0KV
I(V2)/(600V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 600
TD = 0 IDT06S60C
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
8

9. Comparison Graph
Circuit Simulation result
400
Measurement
Simulation
300
Capacitance, C (pF)
200
100
0
0.1 1 10 100 1000
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
0.5 294.444 295.458 0.34
1 267.888 269.551 0.62
2 229.722 232.476 1.20
5 175.000 171.979 -1.73
10 132.500 129.250 -2.45
20 98.000 95.580 -2.47
50 66.000 65.314 -1.04
100 51.111 51.239 0.25
200 40.322 42.318 4.95
500 37.111 35.403 -4.60
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
9