The document presents a comprehensive device modeling report for the Fuji Electric insulated gate bipolar transistor (IGBT) part number 1MB05D-120, detailing various electrical characteristics through circuit simulation results. It includes evaluations for transfer characteristics, gate charge, saturation, forward current, and reverse recovery properties, along with comparison tables that highlight measurement errors. The report emphasizes key parameters under specified test conditions, including voltage and current levels, accompanied by graphical representations of the simulation data.

1. Device Modeling Report
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: 1MB05D-120
MANUFACTURER: Fuji Electric
* REMARK: Free-Wheeling Diode (Standard Model)
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
1

2. Transfer Characteristics
Circuit Simulation result
14A
12A
10A
8A
6A
4A
2A
0A
0V 4V 8V 12V 16V 20V
I(U1:C)
V_VGE
Evaluation circuit
U1 D1
1MB05D-120 D1MB05D-120
VCE
5Vdc
VGE
15Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
2

3. Comparison Graph
Simulation result
Comparison table
Test condition: VCE =5 (V)
VGE (V)
IC (A) %Error
Measurement Simulation
0.350 8.000 8.082 1.02
6.600 10.000 9.970 -0.30
13.400 12.000 12.037 0.31
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
3

4. Fall Time Characteristics
Circuit Simulation result
5.0A
4.5A
4.0A
3.5A
3.0A
2.5A
2.0A
1.5A
1.0A
0.5A
0A
2.0us 3.0us 4.0us 5.0us 6.0us
I(RL)
Time
Evaluation circuit
RL
Rg U1 D1 119.5
1MB05D-120 D1MB05D-120
V1 = -15
V2 = 15 330
TD = 0 V1
TR = 10n VCE
TF = 10n 600Vdc
PW = 3u
PER = 20u
0
Test condition: IC=5 (A), VCC=600 (V)
Parameter Unit Measurement Simulation %Error
tf us 0.200 0.200 0.022
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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5. Gate Charge Characteristics
Circuit Simulation result
25V
20V
15V
10V
5V
0V
0 20n 40n 60n 80n 100n
V(W1:1)
Time*1mA
Evaluation circuit
V2
0
U1 D3 I1
1MB05D-120 D1MB05D-120 D2
Dbreak 5
I1 = 0 W1
I2 = 1m +
TF = 10n V3
TR = 10n -
TD = 0 I2 W
PER = 500m IOFF = 100uA 600
PW = 5m ION = 0A
0
Test condition: VCC=600 (V), IC=5 (A), VGE=15 (V)
Parameter Unit Measurement Simulation %Error
Qge nc 12.000 12.000 0.000
Qgc nc 26.000 25.565 -1.673
Qg nc 55.000 55.622 1.131
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
5

6. Saturation Characteristics
Circuit Simulation result
10A
8A
6A
4A
2A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V
I(IC)
V(IC:-)
Evaluation circuit
U1 D1
1MB05D-120 D1MB05D-120
IC
0Adc
VGE
15Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
6

7. Comparison Graph
Simulation result
Comparison table
Test condition: VGE =15 (V)
VCE (V)
Ic(A) %Error
Measurement Simulation
2.0 2.00 2.01 0.35
4.0 2.43 2.41 -0.71
6.0 2.80 2.81 0.35
8.0 3.20 3.20 0.12
10.0 3.60 3.60 -0.09
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7

8. Output Characteristics
Circuit Simulation result
10A
20V 15V 12V
8A
10V
6A
4A
2A
VGE=8V
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(U1:C)
V_VCE
Evaluation circuit
U1 D1 VCE
1MB05D-120 5Vdc
D1MB05D-120
15Vdc VGE
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
8

9. FWD Forward Current Characteristics
Circuit Simulation result
10A
8A
6A
4A
2A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(Vsense)
V(EC)
Evaluation circuit
Vsense
EC
V1
0Vdc
V2 D1 0Vdc
D1MB05D-120
U1
1MB05D-120
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
9

10. Comparison Graph
Simulation result
Comparison table
VF (V)
IF(A) %Error
Measurement Simulation
0.4 1.200 1.202 0.20
2 1.600 1.616 1.01
4 1.900 1.891 -0.49
6 2.120 2.104 -0.75
8 2.300 2.292 -0.34
10 2.450 2.466 0.66
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11. Reverse Recovery Characteristics
Circuit Simulation result
5.0A
4.0A
3.0A
2.0A
1.0A
0A
-1.0A
-2.0A
-3.0A
-4.0A
5.2us 5.6us 6.0us 6.4us 6.8us 7.2us
I(FWD)
Time
Evaluation circuit
L2
1 2
33.3uH
U2 D1
1MB05D-120 D1MB05D-120
IC = 5
1500uH
FWD 2 1
C L1 VCE
600
Rg U1 D2
1MB05D-120 D1MB05D-120
V1 = -15
V2 = 15 330
TD = 5u V1
TR = 10n
TF = 10n
PW = 4.998u
PER = 100u
0
Test condition: VCC=600 (V) ,IC=5 (A) ,-di/dt=15A/usec.
Parameter Unit Measurement Simulation %Error
trr nsec 280.000 198.247 -29.20
Irr A 2.000 2.034 1.70
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