This document summarizes the SPICE model parameters for simulating the behavior of a TLP181 photocoupler device in a circuit simulation. It includes tables describing the parameters for modeling the internal photodiode, bipolar junction transistor, controlled voltage and current sources, and LED characteristics. Simulation results are also shown for key electrical characteristics of the photocoupler component along with comparison data to actual device measurements.

1. Device Modeling Report
COMPONENTS : PHOTOCOUPLER
PART NUMBER : TLP181
MANUFACTURER : TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Corporation 2007

2. SPICE MODEL U1
TLP181
All Rights Reserved Copyright (C) Bee Technologies Corporation 2007

3. DIODE MODEL
Pspice model Model description
Parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
BIPOLAR JUNCTION TRANSISTOR MODEL
Pspice Model description
model
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
ISC Non-ideal Base-Collector Diode Saturation Current
NK Forward Beta Roll-off Slope Exponent
NR Reverse Emission Coefficient
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
CJC Zero-bias Collector-Base Junction Capacitance
TF Forward Transit Time
TR Reverse Transit Time
All Rights Reserved Copyright (C) Bee Technologies Corporation 2007

4. VOLTAGE CONTROLLED VOLTAGE SOURCE MODEL(VCVS)
E<Name><(+)Node><(－)Node>VALUE={Expression}
E<Name><(+)Node><(－)Node>TABLE={Expression}
VOLTAGE CONTROLLED CURRENT SOURCE MODEL(VCCS)
E<Name><(+)Node><(－)Node>VALUE={Expression}
CURRENT CONTROLLED MODEL(W)
Pspice Model description
model
parameter
IOFF Controlling current to Off state
ION Controlling current to On state
ROFF Off Resistance
RON On Resistance
All Rights Reserved Copyright (C) Bee Technologies Corporation 2007

5. LED IV Curve Characteristics
Simulation result
100mA
10mA
1.0mA
100uA
10uA
1.0uA
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I_I1
V(U1:A)
Evaluation Circuit
U1
I1 V1
1.6Vdc
0mAdc
TLP181
0 0
All Rights Reserved Copyright (C) Bee Technologies Corporation 2007

6. Comparison Graph
Comparison Table
Vfwd(V)
Ifwd (mA) % Error
Measurement Simulation
0.001 0.73 0.731 0.137
0.002 0.76 0.763 0.395
0.005 0.8 0.805 0.625
0.01 0.84 0.838 -0.238
0.02 0.87 0.869 -0.115
0.05 0.91 0.911 0.110
0.1 0.95 0.943 -0.737
0.2 0.98 0.975 -0.510
0.5 1.02 1.018 -0.196
1 1.05 1.051 0.095
2 1.08 1.086 0.556
5 1.13 1.136 0.531
10 1.18 1.180 0.000
20 1.24 1.237 -0.242
50 1.34 1.340 0
All Rights Reserved Copyright (C) Bee Technologies Corporation 2007

7. Transistor Saturation Characteristics
Simulation result
400mV
300mV
200mV
100mV
0s 5ms 10ms 15ms 20ms
V(I2:-)
Time
Evaluation Circuit
U1
I1
I2
8mAdc
2.4mAdc
TLP181
0 0
Comparison Table
Measurement Simulation % Error
VCE(sat) (V) 0.4 (Max) 0.203 -
All Rights Reserved Copyright (C) Bee Technologies Corporation 2007

8. CTR(Current Transfer Ratio) Characteristics
Simulation result
400
200
0
100uA 1.0mA 10mA 50mA
(I(V3)/I(V2))*100
I_I1
Evaluation Circuit
V2 V3
0Vdc 0Vdc
U1
V1
I1 5Vdc
20mAdc
TLP181
Simulation
0 0
All Rights Reserved Copyright (C) Bee Technologies Corporation 2007

9. Rise Curve Table
IO/IF
If (mA) % Error
Measurement Simulation
0.1 22 22.102 0.464
0.2 41 42.255 3.061
0.5 90 89.900 -0.111
1 140 136.297 -2.645
2 180 178.932 -0.593
5 210 204.643 -2.551
10 225 227.123 0.944
12 235 238.701 1.575
Fall Curve Table
IO/IF
If(mA) % Error
Measurement Simulation
12 235 238.701 1.575
20 175 173.328 -0.955
30 135 130.78 -3.126
40 105 105.635 0.605
50 90 88.799 -1.334
All Rights Reserved Copyright (C) Bee Technologies Corporation 2007

10. Switching Time Characteristics
Simulation result
5.0V
1 2
15mA
10mA
2.5V
5mA
>>
0A 0V
0s 40us 80us
1 I(V2) 2 V(R1:2)
Time
Evaluation Circuit
V2
0Vdc
R1
U1
I1 = 0 1.9k
I2 = 16m
TD = 0
TR = 10n I1
TF = 10n
PW = 20u
PER = 500u V1
TLP181
5Vdc
0 0
Comparison Table
IF=16mA, RL=1.9k Measurement Simulation % Error
tS (us) 25 25.126 0.504
tOFF (us) 40 40.424 1.060
All Rights Reserved Copyright (C) Bee Technologies Corporation 2007

11. Output Characteristics
Simulation result
30mA
30m 40m 50m
A A A
20mA
20mA
10mA
10mA
5mA
2mA
0A
30mA
0V 0.5V 1.0V
20mA
-I(V1)
V_V1
10mA
Evaluation Circuit
IB=1mA
U1
V1
5Vdc
I1
0
TLP181
0 0
All Rights Reserved Copyright (C) Bee Technologies Corporation 2007

12. Output Characteristics Reference
All Rights Reserved Copyright (C) Bee Technologies Corporation 2007