Original IGBT TGPF30N43P TGPF30N43 30N43 30N43P 450V 60A TO-220F New TRinno

1. August 2012 : Rev0 1/6www.trinnotech.com
TGPF30N43P
Parameter Symbol Value Unit
Collector-Emitter Voltage VCES 430 V
Gate-Emitter Voltage VGES ±30 V
Continuous Current
TC = 25 ℃
Ic
60 A
TC = 100 ℃ 30 A
Pulsed Collector Current (Note 1) ICM 300 A
Power Dissipation
TC = 25 ℃
PD
20.8 W
TC = 100 ℃ 8.3 W
Operating Junction Temperature TJ -55 ~ 150 ℃
Storage Temperature Range TSTG -55 ~ 150 ℃
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
TL 300 ℃
G C E
C
Parameter Symbol Value Unit
Maximum Thermal resistance, Junction-to-Case RθJC 6.0 ℃/W
Maximum Thermal resistance, Junction-to-Ambient RθJA 62.5 ℃/W
Notes :
(1) Repetitive rating : Pulse width limited by max junction temperature, PW ≤ 10µs, duty cycle ≤ 1%.
Absolute Maximum Ratings
Thermal Characteristics
Features:
• 430V Trench Technology
• High Speed Switching
• Low Conduction Loss
• Positive Temperature Coefficient
• Easy parallel Operation
• RoHS compliant
• JEDEC Qualification
Applications :
Plasma Display Panel, Soft switching application,
Ordering Part Number Package Packaging type Marking Remark
TGPF30N43P TO-220F Tube TGPF30N43P RoHS
TGPF30N43P-R TO-220F(R-Forming) Tube TGPF30N43P RoHS
TGPF30N43P-L TO-220F(L-Forming) Tube TGPF30N43P RoHS

2. 2/6www.trinnotech.comAugust 2012 : Rev0
TGPF30N43P
Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted
Parameter Symbol Test condition Min Typ Max Units
OFF
Collector – Emitter Breakdown Voltage BVCES VGE = 0V, IC = 1mA 430 -- -- V
Zero Gate Voltage Collector Current ICES VCE = 430V, VGE = 0V -- -- 100 µA
Gate – Emitter Leakage Current IGES VCE = 0V, VGE = ±30V -- -- ± 250 nA
ON
Gate – Emitter Threshold Voltage VGE(TH) VGE = VCE, IC = 1mA 2 3.1 4.5 V
Collector – Emitter Saturation Voltage VCE(SAT)
VGE = 15V, IC = 30A, TJ = 25 oC -- 1.4 2.0 V
VGE = 15V, IC = 30A, TJ = 125 oC -- 1.52 -- V
DYNAMIC
Input Capacitance CIES
VCE = 25V,
VGE = 0V,
f = 1MHz
-- 845 -- pF
Output Capacitance COES -- 50 -- pF
Reverse Transfer Capacitance CRES -- 23 -- pF
SWITCHING
Turn-On Delay Time td(on)
VCC = 150V, IC = 30A,
RG = 5Ω, VGE = 15V,
Resistive Load, TJ = 25 oC
-- 13 -- ns
Rise Time tr -- 105 -- ns
Turn-Off Delay Time td(off) -- 35 -- ns
Fall Time tf -- 160 -- ns
Turn-On Delay Time td(on)
VCC = 150V, IC = 30A,
RG = 5Ω, VGE = 15V,
Resistive Load, TJ = 125 oC
-- 14 -- ns
Rise Time tr -- 145 -- ns
Turn-Off Delay Time td(off) -- 40 -- ns
Fall Time tf -- 240 -- ns
Total Gate Charge Qg
VCC = 150V, IC = 30A,
VGE = 15V
-- 26 -- nC
Gate-Emitter Charge Qge -- 3.1 -- nC
Gate-Collector Charge Qgc -- 9 -- nC

3. August 2012 : Rev0 3/6www.trinnotech.com
TGPF30N43P
0 2 4 6 8 10 12 14 16 18 20
0
2
4
6
8
10
12
14
16
18
30A
90A
60A
Collector-EmitterVoltage,VCE
[V]
Gate - Emitter Voltage, VGE
[V]
TC
= 125
o
C
I
C
= 15A
0.1 1 10
0
200
400
600
800
1000
1200
Common Emitter
VGE
=0V, f=1MHz
Tc
=25
o
C
Capacitance[pF]
Collector - Emitter Voltage, VCE
[V]
Cies
Coes
Cres
Fig. 1 Output characteristics Fig. 2 Saturation voltage characteristics
Fig. 3 Saturation voltage vs. collector current Fig. 4 Saturation voltage vs. gate bias
Fig. 5 Saturation voltage vs. gate bias Fig. 6 Capacitance characteristics
0 1 2 3 4 5
0
30
60
90
120
150
VGE = 15V
CollectorCurrent,Ic[A]
Collector - Emitter Voltage, VCE
[V]
-25
o
C
25
o
C 125
o
C
-25 0 25 50 75 100 125 150
0.5
1.0
1.5
2.0
2.5
IC
= 15A
IC
= 60A
Collector-EmitterVoltage,VCE
[V]
Case Temperature, TC
[
o
C]
VGE = 15V
IC
= 30A
0 2 4 6 8 10 12 14 16 18 20
0
2
4
6
8
10
12
14
16
18
30A
90A
60A
Collector-EmitterVoltage,VCE
[V]
Gate - Emitter Voltage, VGE
[V]
TC
= 25
o
C
I
C
= 15A
0 2 4 6 8 10
0
50
100
150
200
6V
7V
8V
9V
11V
15V
20V
CollectorCurrent,Ic[A]
Collector - Emitter Voltage, VCE
[V]
VGE
= 5V
10V
Tc = 25
o
C
12V

4. August 2012 : Rev0 4/6www.trinnotech.com
TGPF30N43P
Fig. 7 Turn on time vs. gate resistance Fig. 8 Turn on time vs. collector current
Fig. 9 Turn on time vs. Case temperature Fig. 10 Turn off time vs. gate resistance
Fig. 11 Turn off time vs. collector current Fig. 12 Turn off time vs. Case temperature
0 20 40 60 80 100
1
10
100
1000
Common Emitter
Vcc
= 150V, VGE
= 15V, IC
= 30A
TC
25
o
C
TC
125
o
C
Td(on)
SwitchingTime[ns]
Gate Resistance, RG
[Ω]
Tr
0 20 40 60 80 100
10
100
1000
Common Emitter
Vcc
= 150V, VGE
= 15V, IC
= 30A
TC
25
o
C
TC
125
o
C
Td(off)
SwitchingTime[ns]
Gate Resistance, RG
[Ω]
Tf
10 20 30 40 50 60 70 80 90
1
10
100
1000
Collector Current, IC
[A]
Common Emitter
Vcc
= 150V, VGE
= 15V, RG
= 5Ω
TC
25
o
C
TC
125
o
C
Td(off)
SwitchingTime[ns]
Tf
40 60 80 100 120
1
10
100
Common Emitter
Vcc
= 150V, VGE
= 15V,
RG
= 5Ω, IC
= 30A
Td(on)
Tr
SwitchingTime[ns]
Case Temperature, TC
[
o
C]
40 60 80 100 120
10
100
Common Emitter
Vcc= 150V, VGE = 15V,
RG = 5Ω, IC = 30A
Tf
Td(off)
SwitchingTime[ns]
Case Temperature, TC
[
o
C]
10 20 30 40 50 60 70 80 90
1
10
100
1000
Common Emitter
Vcc
= 150V, VGE
= 15V, RG
= 5Ω
TC
25
o
C
TC
125
o
C
Td(on)
SwitchingTime[ns]
Collector Current, IC
[A]
Tr

5. August 2012 : Rev0 5/6www.trinnotech.com
TGPF30N43P
Fig. 13 Gate charge characteristics Fig. 14 SOA
Fig. 15 RBSOA Fig. 16 Transient thermal impedance
1E-5 1E-4 1E-3 0.01 0.1 1 10
0.01
0.1
1
10
Duty = 0.5
0.1
0.2
0.05
0.01
0.02
ThermalRespose[Zthjc]
Rectangular Pulse Width [sec]
single pulse
0.1 1 10 100 1000
0.01
0.1
1
10
100
1000
TC
= 25
o
C
TJ
= 150
o
C
Single Pulse
1ms
10ms
10us
100us
DC
IC
Max (pulsed)
CollectorCurrent,IC
[A]
Collector - Emitter Voltage, VCE
[V]
IC
Max (continuous)
0 5 10 15 20 25 30
0
5
10
15
VGE
= 15V,
IC
= 30A, TC
= 25
o
C
VCE
= 150V
VCE
= 200V
VCE
= 320V
Gate-EmitterVoltage,VGE
[V]
Gate Charge, QG
[nC]
1 10 100 1000
1
10
100
1000
CollectorCurrent,IC
[A]
Collector - Emitter Voltage, VCE
[V]
V
GE
= 15V, Tc = 125
o
C

6. 6/6www.trinnotech.comAugust 2012 : Rev0
TGPF30N43P
SYMBOL
INCHES MILLIMETERS
NOTES
MIN MAX MIN MAX
A 0.178 0.194 4.53 4.93
b 0.028 0.036 0.71 0.91
C 0.018 0.024 0.45 0.60
D 0.617 0.633 15.67 16.07
E 0.392 0.408 9.96 10.36
e 0.100 TYP. 2.54TYP.
H1 0.256 0.272 6.50 6.90
J1 0.101 0.117 2.56 2.96
L 0.503 0.519 12.78 13.18
φQ 0.117 0.133 2.98 3.38
b1 0.045 0.055 1.15 1.39
L1 0.114 0.130 2.9 3.3
Q1 0.122 0.138 3.10 3.50
F 0.092 0.108 2.34 2.74
TO-220F-3L MECHANICAL DATA