This document provides the electrical characteristics, maximum ratings, and package dimensions for the S TM4433A P-channel enhancement mode field effect transistor. Key specifications include: - Drain-source voltage rating of -30V - Continuous drain current of 2.5A and pulsed drain current of 6A - On-resistance of 35mOhm at VGS=-10V and 55mOhm at VGS=-4.5V - Surface mount SO-8 package with a junction-to-ambient thermal resistance of 50°C/W

1. -30
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS V
Gate-Source Voltage VGS V
Drain Current-Continuous @ TJ=25 C
-Pulsed
ID
-30
-1.7
2.5
A
A
A
W
IDM
Drain-Source Diode Forward Current IS
Maximum Power Dissipation PD
Operating Junction and Storage
Temperature Range
TJ, TSTG -55 to 150 C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient R JA 50 /W
C
S TM4433A
a
a
a
a
b
1 2 3 4
8 7 6 5
S S S G
D D D D
5
1
S amHop Microelectronics Corp.
Surface Mount Package.
PR ODUCT S UMMAR Y
VDS S ID R DS (ON) ( m W ) Max
-6A
35 @ VGS = -10V
55 @ VGS = -4.5V
FE ATUR E S
Super high dense cell design for low RDS(ON).
Rugged and reliable.
S O-8
1
-30V
20
-6
Jan.25 2005
P-Channel Enhancement Mode Field Effect Transistor

2. S TM4433A
ELECTRICAL CHARACTERISTICS (TA 25 C unless otherwise noted)
=
Parameter Symbol Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS =
VGS 0V, ID -250uA
= -30 V
Zero Gate Voltage Drain Current IDSS VDS -24V, VGS 0V
= = -1 uA
Gate-Body Leakage IGSS VGS 20V, VDS 0V
= = 100 nA
ON CHARACTERISTICS b
Gate Threshold Voltage VGS(th) VDS VGS, ID = -250uA
= -1 -3.0 V
Drain-Source On-State Resistance RDS(ON)
VGS -10V, ID -5.8A 35
VGS -4.5V, ID -2.0A 55
On-State Drain Current ID(ON) VDS = -5V, VGS = -10V -20 A
S
Forward Transconductance FS
g VDS -15V, ID - 5.8A
DYNAMIC CHARACTERISTICS
c
InputCapacitance CISS
CRSS
COSS
OutputCapacitance
Reverse Transfer Capacitance
VDS =-15V, VGS = 0V
f =1.0MHZ
PF
PF
PF
SWITCHING CHARACTERISTICS
c
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
VD = -15V,
ID = -1A,
VGEN = - 10V,
RGEN = 6 -ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =-15V, ID = -5.8A,
VGS =-10V
nC
nC
nC
C
Fall Time
=
=
=
=
= =
5
2
m-ohm
m-ohm
nC
VDS=-15V, ID=-5.8A,VGS=-10V
VDS=-15V, ID=-5.8A,VGS=-4.5V
8.5
920
270
170
8.6
35.3
36.9
36.3
17.5
9.4
2.9
4.8
-1.9
21
40

3. S TM4433A
Parameter Symbol Condition Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
C
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage VSD VGS = 0V, Is =-1.7A -0.77 -1.2 V
b
Notes
a.Surface Mounted on FR4 Board, t<=10sec.
c.Guaranteed by design, notsubjectto production testing.
b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%.
Figure 1. Output Characteristics Figure 2. Transfer Characteristics
Figure 3. Capacitance
-VDS , Drain-to S ource Voltage (V)
-VGS , Gate-to-S ource Voltage (V)
-VDS , Drain-to-S ource Voltage (V)
C
,
C
apacitance
(pF
)
-I
D
,
Drain
C
urrent
(A)
-I
D
,
Drain
C
urrent
(A)
20
16
12
8
4
0
0 0.5 1.0 1.5 2.0 2.5 3.0
3
Figure 4. On-R esistance Variation with
Temperature
On-R
es
is
tance
R
DS
(ON)
,
Tj, J unction Temperature ( C )
(Normalized)
0 5 10 15 20 25 30
Ciss
Coss
1500
1250
1000
750
500
250
0
Crss
25 C
25
20
15
10
5
0
0
-55 C
125 C
1.8
1.6
1.2
0.8
1.4
1.0
0.6
0 25 75 125
50
-25
-55 100
VG S =-10V
ID=-5.8A
0.8 4.8
4.0
3.2
2.4
1.6
-VGS =2V
-VGS =3V
-VGS =3.5V
-VGS =4V
-VGS =4.5V
-VGS =10V

4. S TM4433A
Figure 5. G ate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
V
th,
Normalized
G
ate-S
ource
T
hres
hold
V
oltage
g
F
S
,
T
rans
conductance
(S
)
-V
G
S
,
G
ate
to
S
ource
V
oltage
(V
)
B
V
DS
S
,
Normalized
Drain-S
ource
B
reakdown
V
oltage
-Is
,
S
ource-drain
current
(A)
Figure 7. Transconductance Variation
with Drain C urrent
-IDS , Drain-S ource C urrent (A)
Figure 9. G ate C harge
Qg, Total Gate Charge (nC)
Figure 10. Maximum S afe
Operating Area
-VDS , Drain-S ource Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with S ource C urrent
-VS D, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C ) Tj, J unction Temperature ( C )
-I
D
,
Drain
C
urrent
(A)
4
5
1.3
1.2
1.1
1.0
0.6
0.8
0.4
-50 -25 0 25 50 75 100 125 150
VDS =VGS
ID=-250uA
-50 -25 0 25 50 75 100 125 150
1.3
1.2
1.1
1.0
0.9
0.8
0.7
ID=-250uA
15
12
0
3
6
9
0 5 10 15 20
VDS =-15V
20.0
10.0
1.0
0.4 0.6 0.7 0.9 1.1 1.3
VGS =0V
8
10
6
4
2
0
0 3 6 9 12 15 18 21 24
VDS=-15V
ID=-5.8A
50
10
1
0.1
0.03
0.1 1 10 30 50
VGS=-10V
Single Pulse
TA=25 C
RDS(ON) Limit
10ms
100ms
1s
DC

5. Figure 11. S witching Test Circuit Figure 12. S witching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
td(off)
90%
10% 10%
50% 50%
90%
toff
tf
90%
PULSE WIDTH
T
ransient
T
hermal
Impedance
2
1
0.1
0.01
S quare Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
r(t),Normalized
E
ffective
5
5
S TM4433A
INVERTED
Duty Cycle=0.5
0.2
0.1
0.05
0.02
S ingle Pulse
10
-4
10
-3
10
-2
10
-1
1 10 100
PDM
t1
t2
1. R thJA (t)=r (t) * R thJA
2. R thJA=S ee Datasheet
3. TJM-TA = PDM* R thJA (t)
4. Duty Cycle, D=t1/t2
-VDD
R
D
V
V
R
S
V
G
GS
IN
GE N
OUT
L

6. PACKAGE OUTLINE DIME NS IONS
S O-8
6
S YMBOLS
MIN MIN
0.053
0.004
0.189
0.150
0.228
0.016
0°
1.35
0.10
4.80
3.81
5.79
0.41
0°
MAX MAX
0.069
0.010
0.196
0.157
0.244
0.050
8°
1.75
0.25
4.98
3.99
6.20
1.27
8°
MILLIME TE R S INCHE S
A
A1
D
E
H
L
1
e B
H
E
L
A1
A
C
D
0.05 TYP. 0.016 TYP.
0.008
TYP.
0.015X45°
S TM4433A

7. SO-8 Tape and Reel Data
SO-8 Carrier Tape
SO-8 Reel
unit:㎜
PACKAGE
SOP 8N
150㏕
A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T
6.40 5.20 2.10
ψ1.5
(MIN)
ψ1.5
+ 0.1
- 0.0
12.0
±0.3
1.75
5.5
±0.05
8.0 4.0 2.0
±0.05
0.3
±0.05
UNIT:㎜
TAPE SIZE
12 ㎜
REEL SIZE
ψ330
M N W W1 H K S G R V
330
± 1
62
±1.5
12.4
+ 0.2
16.8
- 0.4
ψ12.75
+ 0.15
2.0
±0.15
S TM4433A
7