Original N-Channel IGBT GIB10B60KD1 GIB10B60KDI 10A 600V TO-220F New IR

1. INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
2/27/04
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175°C
Benefits
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• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
IRGIB10B60KD1
E
G
n-channel
C
VCES = 600V
IC = 10A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.7V
TO-220
Full-PakAbsolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 16
IC @ TC = 100°C Continuous Collector Current 10 A
ICM Pulse Collector Current (Ref.Fig.C.T.5) 32
ILM Clamped Inductive Load current c 32
IF @ TC = 25°C Diode Continuous Forward Current 16
IF @ TC = 100°C Diode Continuous Forward Current 10
IFM Diode Maximum Forward Current 32
VISOL RMS Isolation Voltage, Terminal to Case, t = 1 min 2500 V
VGE Gate-to-Emitter Voltage ±20
PD @ TC = 25°C Maximum Power Dissipation 44 W
PD @ TC = 100°C Maximum Power Dissipation 22
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf.in (1.1N.m)
Thermal / Mechanical Characteristics
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case- IGBT ––– ––– 3.4
RθJC Junction-to-Case- Diode ––– ––– 5.3 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.50 –––
RθJA Junction-to-Ambient, typical socket mount ––– ––– 62
Wt Weight ––– 2.0 ––– g
PD-94576A
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2. IRGIB10B60KD1
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 Vcc =80% (VCES), VGE = 20V, L =100µH, RG = 50Ω. ‚ Energy losses include "tail" and diode reverse recovery.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.99 — V/°C VGE = 0V, IC = 1mA (25°C-150°C)
1.50 1.70 2.10 IC = 10A, VGE = 15V, TJ = 25°C
VCE(on) Collector-to-Emitter Voltage — 2.05 2.35 V IC = 10A, VGE = 15V, TJ = 150°C
— 2.06 2.35 IC = 10A, VGE = 15V, TJ = 175°C
VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -10 — mV/°C VCE = VGE, IC = 1mA (25°C-150°C)
gfe Forward Transconductance — 5.0 — S VCE = 50V, IC = 10A, PW = 80µs
— 1.0 150 VGE = 0V, VCE = 600V
ICES Zero Gate Voltage Collector Current — 90 250 µA VGE = 0V, VCE = 600V, TJ = 150°C
— 150 400 VGE = 0V, VCE = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop — 1.80 2.40 V IF = 5.0A, VGE = 0V
— 1.32 1.74 IF = 5.0A, VGE = 0V, TJ = 150°C
— 1.23 1.62 IF = 5.0A, VGE = 0V, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V, VCE = 0V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 41 62 IC = 10A
Qge Gate-to-Emitter Charge (turn-on) — 4.6 6.9 nC VCC = 400V
Qgc Gate-to-Collector Charge (turn-on) — 19 29 VGE = 15V
Eon Turn-On Switching Loss — 156 264 IC = 10A, VCC = 400V
Eoff Turn-Off Switching Loss — 165 273 µJ VGE = 15V, RG = 50Ω, L = 1.07mH
Etot Total Switching Loss — 321 434 Ls= 150nH, TJ = 25°C d
td(on) Turn-On delay time — 25 33 IC = 10A, VCC = 400V
tr Rise time — 24 34 ns VGE = 15V, RG = 50Ω, L = 1.1mH
td(off) Turn-Off delay time — 180 250 Ls= 150nH, TJ = 25°C
tf Fall time — 62 87
Eon Turn-On Switching Loss — 261 372 IC = 10A, VCC = 400V
Eoff Turn-Off Switching Loss — 313 425 µJ VGE = 15V, RG = 50Ω, L = 1.07mH
Etot Total Switching Loss — 574 694 Ls= 150nH, TJ = 150°C d
td(on) Turn-On delay time — 22 31 IC = 8.0A, VCC = 400V
tr Rise time — 24 34 ns VGE = 15V, RG = 50Ω, L = 1.07mH
td(off) Turn-Off delay time — 240 340 Ls= 150nH, TJ = 150°C
tf Fall time — 48 67
LE Internal Emitter Inductance — 7.5 — nH Measured 5 mm from package
Cies Input Capacitance — 610 915 VGE = 0V
Coes Output Capacitance — 66 99 pF VCC = 30V
Cres Reverse Transfer Capacitance — 23 35 f = 1.0MHz
RBSOA Reverse Bias Safe Operating Area FULL SQUARE TJ = 150°C, IC = 32A, Vp = 600V
VCC=500V,VGE = +15V to 0V,RG = 50Ω
SCSOA Short Circuit Safe Operating Area 10 — — µs TJ = 150°C, Vp = 600V, RG = 50Ω
VCC=360V,VGE = +15V to 0V
ISC (PEAK) Peak Short Circuit Collector Current — 100 — A
Erec Reverse Recovery Energy of the Diode — 99 128 µJ TJ = 150°C
trr Diode Reverse Recovery Time — 79 103 ns VCC = 400V, IF = 10A, L = 1.07mH
Irr Peak Reverse Recovery Current — 14 18 A VGE = 15V, RG = 50Ω
Qrr Diode Reverse Recovery Charge — 553 719 nC di/dt = 500A/µs
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3. IRGIB10B60KD1
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Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 175°C
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
10 100 1000
VCE (V)
1
10
100
ICA)
0 20 40 60 80 100 120 140 160 180
TC (°C)
0
4
8
12
16
20
IC(A)
0 20 40 60 80 100 120 140 160 180
TC (°C)
0
5
10
15
20
25
30
35
40
45
50
Ptot(W)
1 10 100 1000 10000
VCE (V)
0.01
0.1
1
10
100
IC(A)
10 µs
100 µs
1ms
DC
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4. IRGIB10B60KD1
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Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80µs
0 2 4 6
VCE (V)
0
2
4
6
8
10
12
14
16
18
20
ICE(A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0 2 4 6
VCE (V)
0
2
4
6
8
10
12
14
16
18
20
ICE(A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0 2 4 6
VCE (V)
0
2
4
6
8
10
12
14
16
18
20
ICE(A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VF (V)
0
5
10
15
20
25
30
35
40
IF(A)
-40°C
25°C
150°C
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5. IRGIB10B60KD1
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Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
5 10 15 20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE(V)
ICE = 5.0A
ICE = 10A
ICE = 20A
5 10 15 20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE(V)
ICE = 5.0A
ICE = 10A
ICE = 20A
5 10 15 20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE(V)
ICE = 5.0A
ICE = 10A
ICE = 20A
0 5 10 15 20
VGE (V)
0
10
20
30
40
50
60
70
80
90
100
ICE(A)
TJ = 25°C
TJ = 150°C
TJ = 150°C
TJ = 25°C
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6. IRGIB10B60KD1
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Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=1.07mH; VCE= 400V
RG= 50Ω; VGE= 15V
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L=1.07mH; VCE= 400V
RG= 50Ω; VGE= 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=1.07mH; VCE= 400V
ICE= 10A; VGE= 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L=1.07mH; VCE= 400V
ICE= 10A; VGE= 15V
0 5 10 15 20
IC (A)
0
100
200
300
400
500
600
700
Energy(µJ)
EOFF
EON
0 100 200 300 400 500
RG (Ω)
0
200
400
600
800
1000
Energy(µJ)
EON
EOFF
0 5 10 15 20
IC (A)
1
10
100
1000
SwichingTime(ns)
tR
tdOFF
tF
tdON
0 100 200 300 400 500
RG (Ω)
10
100
1000
10000
SwichingTime(ns)
tR
tdOFF
tF
tdON
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7. IRGIB10B60KD1
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Fig. 17 - Typical Diode IRR vs. IF
TJ = 150°C
Fig. 18 - Typical Diode IRR vs. RG
TJ = 150°C; IF = 10A
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V;TJ = 150°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
ICE= 10A; TJ = 150°C
0 100 200 300 400 500
RG (Ω)
0
2
4
6
8
10
12
14
16
IRR(A)
0 200 400 600
diF /dt (A/µs)
0
2
4
6
8
10
12
14
16
IRR(A)
0 5 10 15 20
IF (A)
0
5
10
15
IRR(A)
RG = 470 Ω
RG =50 Ω
RG =150 Ω
RG =270 Ω
0 100 200 300 400 500 600
diF /dt (A/µs)
0
200
400
600
800
1000
QRR(nC)
50Ω
150Ω
270 Ω
470Ω
20A
10A
5.0A
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8. IRGIB10B60KD1
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Fig. 21 - Typical Diode ERR vs. IF
TJ = 150°C
Fig. 23 - Typical Gate Charge vs. VGE
ICE = 10A; L = 2500µH
Fig. 22- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
0 5 10 15 20 25
IF (A)
40
80
120
160
200
Energy(µJ)
470 Ω
270 Ω
150 Ω
50 Ω
1 10 100
VCE (V)
10
100
1000
Capacitance(pF)
Cies
Coes
Cres
0 10 20 30 40 50
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE(V)
300V
400V
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9. IRGIB10B60KD1
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Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
ThermalResponse(ZthJC)
0.20
0.10
D = 0.50
0.01
0.02
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τJ
τJ
τ1
τ1
τ2
τ2
τ3
τ3
R1
R1
R2
R2
R3
R3
Ci i/Ri
Ci= τi/Ri
τ
τC
τ4
τ4
R4
R4 Ri (°C/W) τi (sec)
0.3628 0.00018
0.2582 0.000695
1.1008 0.075305
1.6973 1.781
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
ThermalResponse(ZthJC)
0.20
0.10
D = 0.50
0.01
0.02
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τJ
τJ
τ1
τ1
τ2
τ2
τ3
τ3
R1
R1
R2
R2
R3
R3
Ci i/Ri
Ci= τi/Ri
τ
τC
τ4
τ4
R4
R4 Ri (°C/W) τi (sec)
0.9004 0.000103
1.3642 0.000693
1.4540 0.033978
1.5805 1.6699
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10. IRGIB10B60KD1
10 www.irf.com
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
1K
VCC
DUT
0
L
Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
L
Rg
VCC
diode clamp /
DUT
DUT /
DRIVER
- 5V
Rg
VCCDUT
R =
VCC
ICM
L
Rg
80 V DUT
480V
+
-
DC
Driver
DUT
360V
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11. IRGIB10B60KD1
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Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF4- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
0
100
200
300
400
0.00 10.00 20.00 30.00 40.00 50.00
Time (uS)
Vce(V)
0
50
100
150
200
Ice(A)
-200
-100
0
100
200
300
400
500
600
0.4 0.6 0.8 1 1.2
Time (uS)
Vce(V)
-5
-2.5
0
2.5
5
7.5
10
12.5
15
Ice(A)
tf
Eoff Loss
90% Ice
5% Vce
5% Ice
Vce
Ice
-100
0
100
200
300
400
500
600
0.05 0.15 0.25 0.35
Time (uS)
Vce(V)
-5
0
5
10
15
20
25
30
Ice(A)
Ice(A)
Eon
Loss
tr
90% Ice
10% Ice
5% Vce
Vce
Ice
-600
-500
-400
-300
-200
-100
0
100
0.20 0.30 0.40 0.50 0.60
Time (uS)
Vf(V)
-20
-15
-10
-5
0
5
10
15
If(A)
QRR
tRR
Peak
IRR
10% Peak
IRR
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12. IRGIB10B60KD1
12 www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.2/04
TO-220 Full-Pak Part Marking Information
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
NOTES:
1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982
2 CONTROLLING DIMENSION: INCH.
D
C
A
B
MINIMUM CREEPAGE
DISTANCE BETWEEN
A-B-C-D = 4.80 (.189)
3X
2.85 (.112)
2.65 (.104)
2.80 (.110)
2.60 (.102)
4.80 (.189)
4.60 (.181)
7.10 (.280)
6.70 (.263)
3.40 (.133)
3.10 (.123)
ø
- A -
3.70 (.145)
3.20 (.126)
1.15 (.045)
MIN.
3.30 (.130)
3.10 (.122)
- B -
0.90 (.035)
0.70 (.028)3X
0.25 (.010) M A M B
2.54 (.100)
2X
3X
13.70 (.540)
13.50 (.530)
16.00 (.630)
15.80 (.622)
1 2 3
10.60 (.417)
10.40 (.409)
1.40 (.055)
1.05 (.042)
0.48 (.019)
0.44 (.017)
IRFI840G
34 32
924K
EXAMPLE: THIS IS AN IRFI840G
WITH ASSEMBLY PART NUMBER
LOGO
RECTIFIER
INTERNATIONAL
ASSEMBLY
LOT CODE WEEK 24
LINE K
YEAR 9 = 1999
DATE CODEIN THE ASSEMBLY LINE "K"
ASSEMBLED ON WW 24 1999
LOT CODE 3432
TO-220 Full-Pak package is not recommended for Surface Mount Application
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