The document provides information on STMicroelectronics' PowerMESH IGBT product family including the STGB6NC60HDT4, STGF6NC60HD, and STGP6NC60HD devices. The devices are 600V, 7A very fast IGBTs optimized for high-frequency applications with low switching times and low voltage drop. Electrical characteristics, switching performance curves, package details, and application information are included.
Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 N...AUTHELECTRONIC
Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 New ST
https://authelectronic.com/original-n-channel-mosfet-fqd10n60c-std10nm60n-10nm60-10n60-10a-600v-to-252-new-st
Original N-channel 650 V 0.230 Ohm 12 A MDmesh V Power MOSFET in DPAK DPAK ST...AUTHELECTRONIC
Original N-channel 650 V 0.230 Ohm 12 A MDmesh V Power MOSFET in DPAK DPAK STF16N65M5 16N65M5 16N65 710V 12A TO-220FP New STMicroelectronics
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Original Mosfet N 8N80C 8N80 FQPF8N80C FQPF8N80 8A 800V TO-220 New FairchildAUTHELECTRONIC
Original Mosfet N 8N80C 8N80 FQPF8N80C FQPF8N80 8A 800V TO-220 New Fairchild
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Original Mosfet IRFB18N50KPBF IRFB18N50K FB18N50K 18N50K 500V 17A TO-220 New ...AUTHELECTRONIC
Original Mosfet IRFB18N50KPBF IRFB18N50K FB18N50K 18N50K 500V 17A TO-220 New International Rectifier
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Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 N...AUTHELECTRONIC
Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 New ST
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Original N-channel 650 V 0.230 Ohm 12 A MDmesh V Power MOSFET in DPAK DPAK ST...AUTHELECTRONIC
Original N-channel 650 V 0.230 Ohm 12 A MDmesh V Power MOSFET in DPAK DPAK STF16N65M5 16N65M5 16N65 710V 12A TO-220FP New STMicroelectronics
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Original Mosfet N 8N80C 8N80 FQPF8N80C FQPF8N80 8A 800V TO-220 New FairchildAUTHELECTRONIC
Original Mosfet N 8N80C 8N80 FQPF8N80C FQPF8N80 8A 800V TO-220 New Fairchild
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Original Mosfet IRFB18N50KPBF IRFB18N50K FB18N50K 18N50K 500V 17A TO-220 New ...AUTHELECTRONIC
Original Mosfet IRFB18N50KPBF IRFB18N50K FB18N50K 18N50K 500V 17A TO-220 New International Rectifier
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Immunizing Image Classifiers Against Localized Adversary Attacksgerogepatton
This paper addresses the vulnerability of deep learning models, particularly convolutional neural networks
(CNN)s, to adversarial attacks and presents a proactive training technique designed to counter them. We
introduce a novel volumization algorithm, which transforms 2D images into 3D volumetric representations.
When combined with 3D convolution and deep curriculum learning optimization (CLO), itsignificantly improves
the immunity of models against localized universal attacks by up to 40%. We evaluate our proposed approach
using contemporary CNN architectures and the modified Canadian Institute for Advanced Research (CIFAR-10
and CIFAR-100) and ImageNet Large Scale Visual Recognition Challenge (ILSVRC12) datasets, showcasing
accuracy improvements over previous techniques. The results indicate that the combination of the volumetric
input and curriculum learning holds significant promise for mitigating adversarial attacks without necessitating
adversary training.
Student information management system project report ii.pdfKamal Acharya
Our project explains about the student management. This project mainly explains the various actions related to student details. This project shows some ease in adding, editing and deleting the student details. It also provides a less time consuming process for viewing, adding, editing and deleting the marks of the students.
Hybrid optimization of pumped hydro system and solar- Engr. Abdul-Azeez.pdffxintegritypublishin
Advancements in technology unveil a myriad of electrical and electronic breakthroughs geared towards efficiently harnessing limited resources to meet human energy demands. The optimization of hybrid solar PV panels and pumped hydro energy supply systems plays a pivotal role in utilizing natural resources effectively. This initiative not only benefits humanity but also fosters environmental sustainability. The study investigated the design optimization of these hybrid systems, focusing on understanding solar radiation patterns, identifying geographical influences on solar radiation, formulating a mathematical model for system optimization, and determining the optimal configuration of PV panels and pumped hydro storage. Through a comparative analysis approach and eight weeks of data collection, the study addressed key research questions related to solar radiation patterns and optimal system design. The findings highlighted regions with heightened solar radiation levels, showcasing substantial potential for power generation and emphasizing the system's efficiency. Optimizing system design significantly boosted power generation, promoted renewable energy utilization, and enhanced energy storage capacity. The study underscored the benefits of optimizing hybrid solar PV panels and pumped hydro energy supply systems for sustainable energy usage. Optimizing the design of solar PV panels and pumped hydro energy supply systems as examined across diverse climatic conditions in a developing country, not only enhances power generation but also improves the integration of renewable energy sources and boosts energy storage capacities, particularly beneficial for less economically prosperous regions. Additionally, the study provides valuable insights for advancing energy research in economically viable areas. Recommendations included conducting site-specific assessments, utilizing advanced modeling tools, implementing regular maintenance protocols, and enhancing communication among system components.
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Cosmetic shop management system project report.pdfKamal Acharya
Buying new cosmetic products is difficult. It can even be scary for those who have sensitive skin and are prone to skin trouble. The information needed to alleviate this problem is on the back of each product, but it's thought to interpret those ingredient lists unless you have a background in chemistry.
Instead of buying and hoping for the best, we can use data science to help us predict which products may be good fits for us. It includes various function programs to do the above mentioned tasks.
Data file handling has been effectively used in the program.
The automated cosmetic shop management system should deal with the automation of general workflow and administration process of the shop. The main processes of the system focus on customer's request where the system is able to search the most appropriate products and deliver it to the customers. It should help the employees to quickly identify the list of cosmetic product that have reached the minimum quantity and also keep a track of expired date for each cosmetic product. It should help the employees to find the rack number in which the product is placed.It is also Faster and more efficient way.
Final project report on grocery store management system..pdfKamal Acharya
In today’s fast-changing business environment, it’s extremely important to be able to respond to client needs in the most effective and timely manner. If your customers wish to see your business online and have instant access to your products or services.
Online Grocery Store is an e-commerce website, which retails various grocery products. This project allows viewing various products available enables registered users to purchase desired products instantly using Paytm, UPI payment processor (Instant Pay) and also can place order by using Cash on Delivery (Pay Later) option. This project provides an easy access to Administrators and Managers to view orders placed using Pay Later and Instant Pay options.
In order to develop an e-commerce website, a number of Technologies must be studied and understood. These include multi-tiered architecture, server and client-side scripting techniques, implementation technologies, programming language (such as PHP, HTML, CSS, JavaScript) and MySQL relational databases. This is a project with the objective to develop a basic website where a consumer is provided with a shopping cart website and also to know about the technologies used to develop such a website.
This document will discuss each of the underlying technologies to create and implement an e- commerce website.
Welcome to WIPAC Monthly the magazine brought to you by the LinkedIn Group Water Industry Process Automation & Control.
In this month's edition, along with this month's industry news to celebrate the 13 years since the group was created we have articles including
A case study of the used of Advanced Process Control at the Wastewater Treatment works at Lleida in Spain
A look back on an article on smart wastewater networks in order to see how the industry has measured up in the interim around the adoption of Digital Transformation in the Water Industry.
Original IGBT STGP6NC60HD GP6NC60 6N60 600V 15A TO-220 New STMicroelectronics
1. 1
2
3
TO-220
TAB
1
2
3
TO-220FP
1
3
TAB
D PAK2
C(2, TAB)
E(3)
NG1E3C2T
G(1)
Features
• Low VCE(sat)
• Low CRES/CIES ratio (no cross-conduction susceptibility)
• Very soft ultra fast recovery antiparallel diode
• High-frequency operation
Applications
• High-frequency inverters
• SMPS and PFC in both hard switch and resonant topologies
• Motor drivers
Description
Using the latest high-voltage technology based on a patented strip layout,
STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™
IGBTs characterized by an outstanding performance. The “H” suffix identifies a family
optimized for high-frequency applications which achieve very high switching
performances (reduced tfall) while mantaining a low voltage drop.
Product status link
STGB6NC60HDT4
STGF6NC60HD
STGP6NC60HD
N-channel 600 V, 7 A, very fast IGBT
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
Datasheet
DS4324 - Rev 6 - October 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
2. 1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value
Unit
D2PAK, TO-220 TO-220FP
VCES Collector-emitter voltage (VGE = 0 V) 600 V
IC
Continuous collector current at TC = 25 °C 15 6
AContinuous collector current at
TC = 100 °C
7 3
ICM
(1)
Collector current (pulsed) 21 A
VGE Gate-emitter voltage ±20 V
IF Diode RMS forward current at TC = 25 °C 10 A
PTOT Total power dissipation at TC = 25 °C 62.5 25 W
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink (t = 1
s; TC = 25 °C)
2.5 kV
TSTG Storage temperature range
-55 to 150
°C
TJ Operating junction temperature range °C
1. Pulse width is limited by maximum junction temperature.
Table 2. Thermal data
Symbol Parameter
Value
Unit
D2PAK, TO-220 TO-220FP
RthJC Thermal resistance junction-case 2 5 °C/W
RthJA Thermal resistance junction-ambient 62.5 °C/W
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
Electrical ratings
DS4324 - Rev 6 page 2/24
3. 2 Electrical characteristics
TC = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)CES
Collector-emitter breakdown
voltage
VGE = 0 V, IC = 1 mA 600 V
VCE(sat)
Collector-emitter saturation
voltage
VGE = 15 V, IC = 3 A 1.9 2.5
V
VGE = 15 V, IC = 3 A, TC = 125 °C 1.7
VGE(th) Gate threshold voltage VCE = VGE, IC = 250 µA 3.75 5.75 V
ICES Collector cut-off current
VGE = 0 V, VCE = 600 V 10 µA
VGE = 0 V, VCE = 600 V, TC = 125 °C (1)
1 mA
IGES Gate-emitter leakage current VGE = ±20 V, VCE = 0 V ±100 nA
1. Defined by design, not subject to production test
Table 4. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
Cies Input capacitance
VCE = 25 V, f = 1 MHz, VGE = 0 V
- 205 -
pFCoes Output capacitance - 32 -
Cres Reverse transfer capacitance - 5.5 -
Qg Total gate charge
VCE = 390 V, IC = 3 A, VGE = 0 to 15 V
(see Figure 18. Gate charge test circuit)
- 13.6 -
nCQge Gate-emitter charge - 3 -
Qgc Gate-collector charge - 6 -
ICL
Turn-off SOA minimum
current
Vclamp = 390 V, TJ = 150 °C, RG = 10 Ω,
VGE = 15 V
- 19 - A
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
Electrical characteristics
DS4324 - Rev 6 page 3/24
4. Table 5. Switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time
VCC = 390 V, IC = 3 A, RG = 10 Ω,
VGE = 15 V (see Figure 17. Test circuit for
inductive load switching)
- 12 -
ns
tr Current rise time - 5 -
(di/dt)on Turn-on current slope - 612 - A/µs
td(on) Turn-on delay time VCC = 390 V, IC = 3 A, RG = 10 Ω,
VGE = 15 V, TJ = 125 °C
(see Figure 17. Test circuit for inductive
load switching)
- 13 -
ns
tr Current rise time - 4.3 -
(di/dt)on Turn-on current slope - 560 - A/µs
tr(Voff) Off voltage rise time
VCC = 390 V, IC = 3 A, RG = 10 Ω,
VGE = 15 V (see Figure 17. Test circuit for
inductive load switching)
- 40 -
nstd(off) Turn-off delay time - 76 -
tf Current fall time - 100 -
tr(Voff) Off voltage rise time VCC = 390 V, IC = 3 A, RG = 10 Ω,
VGE = 15 V, TJ = 125 °C
(see Figure 17. Test circuit for inductive
load switching)
- 60 -
nstd(off) Turn-off delay time - 98 -
tf Current fall time - 124 -
Table 6. Switching energy (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Eon
(1)
Turn-on switching energy
VCC = 390 V, IC = 3 A, RG = 10 Ω,
VGE = 15 V (see )Figure 17. Test circuit
for inductive load switching
- 20 -
µJEoff
(2)
Turn-off switching energy - 68 -
Ets Total switching energy - 88 -
Eon
(1)
Turn-on switching energy VCC = 390 V, IC = 3 A, RG = 10 Ω,
VGE = 15 V, TJ = 125 °C
(see )Figure 17. Test circuit for inductive
load switching
- 37 -
µJEoff
(2)
Turn-off switching energy - 93 -
Ets Total switching energy - 130 -
1. Including the reverse recovery of the diode
2. Including the tail of the collector current
Table 7. Collector-emitter diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
Vf Forward on-voltage
If = 1.5 A - 1.6 2.1
V
If = 1.5 A, Tj = 125 °C - 1.3
trr Reverse recovery time
If = 3 A ,VR = 40 V, di/dt = 100 A/μs (see
Figure 20. Diode reverse recovery
waveform)
- 21 ns
Qrr Reverse recovery charge - 14 nC
Irrm Reverse recovery current - 1.36 A
trr Reverse recovery time
If = 3 A ,VR = 40 V, Tj = 125 °C, di/dt =
100 A/μs (see Figure 20. Diode reverse
recovery waveform)
- 34 ns
Qrr Reverse recovery charge - 32 nC
Irrm Reverse recovery current - 1.88 A
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
Electrical characteristics
DS4324 - Rev 6 page 4/24
6. Figure 7. Normalized gate threshold voltage vs
temperature
Figure 8. Collector-emitter on voltage vs collector current
Figure 9. Normalized breakdown voltage vs temperature Figure 10. Switching energy vs temperature
Figure 11. Switching energy vs gate resistance Figure 12. Switching energy vs collector current
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
Electrical characteristics (curves)
DS4324 - Rev 6 page 6/24
8. 3 Test circuits
Figure 17. Test circuit for inductive load switching
A A
C
E
G
B
RG+
-
G
C 3.3
µF
1000
µF
L=100µH
VCC
E
D.U.T
B
AM01504v1
Figure 18. Gate charge test circuit
AM01505v1
k
k
k
k
k
k
Figure 19. Switching waveform
AM01506v1
90%
10%
90%
10%
VG
VCE
IC
Td(on)
Ton
Tr(Ion)
Td(off)
Toff
Tf
Tr(Voff)
Tcross
90%
10%
Figure 20. Diode reverse recovery waveform
25
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
Test circuits
DS4324 - Rev 6 page 8/24
9. 4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
Package information
DS4324 - Rev 6 page 9/24
10. 4.1 D²PAK (TO-263) type A package information
Figure 21. DPAK (TO-252) type A package outline
0068772_A_25
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
DPAK (TO-252) type A package information
DS4324 - Rev 6 page 10/24
11. Table 8. DPAK (TO-252) type A mechanical data
Dim.
mm
Min. Typ. Max.
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 4.95 5.10 5.25
E 6.40 6.60
E1 4.60 4.70 4.80
e 2.159 2.286 2.413
e1 4.445 4.572 4.699
H 9.35 10.10
L 1.00 1.50
(L1) 2.60 2.80 3.00
L2 0.65 0.80 0.95
L4 0.60 1.00
R 0.20
V2 0° 8°
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
DPAK (TO-252) type A package information
DS4324 - Rev 6 page 11/24
12. 4.2 D²PAK (TO-263) type B package information
Figure 22. D²PAK (TO-263) type B package outline
0079457_25_B
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
D²PAK (TO-263) type B package information
DS4324 - Rev 6 page 12/24
13. Table 9. D²PAK (TO-263) type B mechanical data
Dim.
mm
Min. Typ. Max.
A 4.36 4.56
A1 0 0.25
b 0.70 0.90
b1 0.51 0.89
b2 1.17 1.37
b3 1.36 1.46
c 0.38 0.694
c1 0.38 0.534
c2 1.19 1.34
D 8.60 9.00
D1 6.90 7.50
E 10.15 10.55
E1 8.10 8.70
e 2.54 BSC
H 15.00 15.60
L 1.90 2.50
L1 1.65
L2 1.78
L3 0.25
L4 4.78 5.28
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
D²PAK (TO-263) type B package information
DS4324 - Rev 6 page 13/24
14. Figure 23. D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
D²PAK (TO-263) type B package information
DS4324 - Rev 6 page 14/24
15. 4.2.1 Packing information
Figure 24. D²PAK tape outline
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
D²PAK (TO-263) type B package information
DS4324 - Rev 6 page 15/24
16. Figure 25. D²PAK reel outline
A
D
B
Full radius
Tape slot
in core for
tape start
2.5mm min.width
G measured
at hub
C
N
40mm min.
access hole
at slot location
T
AM06038v1
Table 10. D²PAK tape and reel mechanical data
Tape Reel
Dim.
mm
Dim.
mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base quantity 1000
P2 1.9 2.1 Bulk quantity 1000
R 50
T 0.25 0.35
W 23.7 24.3
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
D²PAK (TO-263) type B package information
DS4324 - Rev 6 page 16/24
18. Table 11. TO-220FP package mechanical data
Dim.
mm
Min. Typ. Max.
A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
TO-220FP package information
DS4324 - Rev 6 page 18/24
19. 4.4 TO-220 type A package information
Figure 27. TO-220 type A package outline
0015988_typeA_Rev_22
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
TO-220 type A package information
DS4324 - Rev 6 page 19/24
20. Table 12. TO-220 type A package mechanical data
Dim.
mm
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
TO-220 type A package information
DS4324 - Rev 6 page 20/24
21. 5 Ordering information
Table 13. Ordering information
Order code Marking Package Packing
STGB6NC60HDT4 GB6NC60HD D²PAK Tape and reel
STGF6NC60HD GF6NC60HD TO-220FP Tube
STGP6NC60HD GP6NC60HD TO-220 Tube
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
Ordering information
DS4324 - Rev 6 page 21/24
22. Revision history
Table 14. Document revision history
Date Revision Changes
28-Nov-2005 1 First release
07-Mar-2006 2 Complete version
31-Jul-2006 3 Modified Figure 10.
26-Apr-2007 4 Inserted package I2PAK
20-Nov-2017 5
Part number STGB6NC60HD-1 has
been moved to a separate datasheet.
Updated information on cover page.
Updated Table 2: "Absolute maximum
ratings" and Table 4: "Static
characteristics".
Updated Section 2.1: "Electrical
characteristics (curves)".
Updated Section 4: "Package
information".
Minor text changes
23-Oct-2018 6
Updated title in coverpage and
Table 4. Dynamic characteristics.
Minor text changes.
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
DS4324 - Rev 6 page 22/24