This document summarizes the specifications and characteristics of the 2SK3047 silicon N-channel power F-MOS FET. Key features include an avalanche energy capacity of over 15mJ, gate-source voltage rating of ±30V, and fast switching time of 25ns. The FET can be used in applications such as contactless relays, solenoid driving circuits, motor driving circuits, and switching power supplies. Electrical characteristics including breakdown voltage, threshold voltage, on-resistance, and input/output capacitances are provided.

1. 1
Power F-MOS FETs
unit: mm
2SK3047
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 15mJ
q VGSS = ±30V guaranteed
q High-speed switching: tf = 25ns
q No secondary breakdown
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Electrical Characteristics (TC = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Symbol
IDSS
IGSS
VDSS
Vth
RDS(on)
| Yfs |
VDSF
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
VDS = 640V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 1A
VDS = 25V, ID = 1A
IDR = 2A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VGS = 10V, ID = 1A
VDD = 200V, RL = 200Ω
min
800
2
0.7
typ
4.8
1.1
350
60
25
15
20
60
25
max
0.1
±1
5
7
−1.3
Unit
mA
µA
V
V
Ω
S
V
pF
pF
pF
ns
ns
ns
ns
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
TC = 25°C
Ta = 25°C
Symbol
VDSS
VGSS
ID
IDP
EAS*
PD
Tch
Tstg
Ratings
800
±30
±2
±4
15
30
2
150
−55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
* L = 5mH, IL = 2.45A, VDD = 50V, 1 pulse
1
9.9±0.3
15.0±0.513.7±0.2
4.2±0.2
4.6±0.2
2.9±0.2
0.8±0.1
1.4±0.2
2 3
φ3.2±0.1
2.6±0.1
0.55±0.15
2.54±0.3
5.08±0.5
3.0±0.5
1.6±0.2
1: Gate
2: Drain
3: Source
TO-220D Package

2. 2
Power F-MOS FETs 2SK3047
Area of safe operation (ASO) PD  Ta EAS  Tj
ID  VDS ID  VGS Vth  TC
RDS(on)  ID | Yfs |  ID Ciss, Coss, Crss  VDS
1 10 100 10003 30 300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
TC=25˚C
t =10µs
100µs
DC
1ms
10ms
100ms
Drain to source voltage VDS
(V)
DraincurrentID
(A)
0 16040 12080 14020 10060
0
60
50
40
30
20
10
(1) TC=Ta
(2) Without heat sink
(1)
(2)
Ambient temperature Ta (˚C)
AllowablepowerdissipationPD
(W)
25 50 75 100 125 150 175
0
5
10
15
20
25
30
VDD=50V
ID=2A
Junction temperature Tj
(˚C)
AvalancheenergycapacityEAS(mJ)
0 10 20 30 40 50 60
0
1
2
3
4
VGS=15V
10V
6V
7V
5.5V
6.5V
5V
TC=25˚C
Drain to source voltage VDS
(V)
DraincurrentID
(A)
0 121082 64
0
1
2
3
4
5
TC=0˚C
25˚C
100˚C
125˚C
VDS=25V
Gate to source voltage VGS
(V)
DraincurrentID
(A)
0 25 50 75 100 125 150
0
1
2
3
4
5
6
VDS=25V
ID=1mA
Case temperature TC
(˚C)
GatethresholdvoltageVth
(V)
0 1 2 3 4 5
0
12
10
8
6
4
2
VGS=10V
15V
Drain current ID
(A)
DraintosourceON-resistanceRDS(on)
(Ω)
30 1 2 4
0
0.5
1.0
1.5
2.0
VDS=25V
TC=25˚C
Drain current ID
(A)
Forwardtransferadmittance|Yfs|(S)
0 50 100 150 200
1
10
100
1000
10000
Ciss
Coss
Crss
f=1MHz
TC=25˚C
Drain to source voltage VDS
(V)
Inputcapacitance(Commonsource),Outputcapacitance(Commonsource),
Reversetransfercapacitance(Commonsource)Ciss,Coss,Crss
(pF)

3. 3
Power F-MOS FETs 2SK3047
VDS, VGS  Qg td(on), tr, tf, td(off)  ID
Rth(t)  t
10–4 1010–3 10–110–2 1 103102 104
10–2
10–1
1
10
102
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
(2)
Time t (s)
ThermalresistanceRth(t)(˚C/W)
0 4 8 12 16 20 24
0
100
200
300
400
500
600
700
800
0
4
8
12
16
2
6
10
14
VGSVDS
ID=2A
TC=25˚C
GatetosourcevoltageVGS
(V)
Gate charge amount Qg
(nC)
DraintosourcevoltageVDS
(V)
0 0.5 1.0 1.5 2.0 2.5
0
20
40
60
80
100
120
td(off)
tf
tr
td(on)
VDD=200V
VGS=10V
TC=25˚C
Drain current ID
(A)
Switchingtimetd(on),tr,tf,td(off)
(ns)