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Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 16
IC @ TC = 100°C Continuous Collector Current 9.0
ICM Pulsed Collector Current Q 32 A
ILM Clamped Inductive Load Current R 32
IF @ TC = 100°C Diode Continuous Forward Current 7.0
IFM Diode Maximum Forward Current 32
tsc Short Circuit Withstand Time 10 µs
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 60
PD @ TC = 100°C Maximum Power Dissipation 24
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
IRG4BC20KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
FeaturesFeaturesFeaturesFeaturesFeatures
E
G
n-channel
C
VCES = 600V
VCE(on) typ. = 2.27V
@VGE = 15V, IC = 9.0A
Short Circuit Rated
UltraFast IGBT
4/24/2000
• Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-220AB package
Benefits
PD -91599A
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 2.1
RθJC Junction-to-Case - Diode ––– ––– 3.5 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.50 –––
RθJA Junction-to-Ambient, typical socket mount ––– ––– 80
Wt Weight ––– 2 (0.07) ––– g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
TO-220AB
• Latest generation 4 IGBTs offer highest power density
motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• This part replaces the IRGBC20KD2 and IRGBC20MD2
products
• For hints see design tip 97003
www.irf.com 1
IRG4BC20KD
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 34 51 IC = 9.0A
Qge Gate - Emitter Charge (turn-on) — 4.9 7.4 nC VCC = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) — 14 21 VGE = 15V
td(on) Turn-On Delay Time — 54 —
tr Rise Time — 34 — TJ = 25°C
td(off) Turn-Off Delay Time — 180 270 IC = 9.0A, VCC = 480V
tf Fall Time — 72 110 VGE = 15V, RG = 50Ω
Eon Turn-On Switching Loss — 0.34 — Energy losses include "tail"
Eoff Turn-Off Switching Loss — 0.30 — mJ and diode reverse recovery
Ets Total Switching Loss — 0.64 0.96 See Fig. 9,10,14
tsc Short Circuit Withstand Time 10 — — µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 50Ω , VCPK < 500V
td(on) Turn-On Delay Time — 51 — TJ = 150°C, See Fig. 11,14
tr Rise Time — 37 — IC = 9.0A, VCC = 480V
td(off) Turn-Off Delay Time — 220 — VGE = 15V, RG = 50Ω
tf Fall Time — 160 — Energy losses include "tail"
Ets Total Switching Loss — 0.85 — mJ and diode reverse recovery
LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Cies Input Capacitance — 450 — VGE = 0V
Coes Output Capacitance — 61 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 14 — ƒ = 1.0MHz
trr Diode Reverse Recovery Time — 37 55 ns TJ = 25°C See Fig.
— 55 90 TJ = 125°C 14 IF = 8.0A
Irr Diode Peak Reverse Recovery Current — 3.5 5.0 A TJ = 25°C See Fig.
— 4.5 8.0 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge — 65 138 nC TJ = 25°C See Fig.
— 124 360 TJ = 125°C 16 di/dt = 200Aµs
di(rec)M/dt Diode Peak Rate of Fall of Recovery — 240 — A/µs TJ = 25°C See Fig.
During tb — 210 — TJ = 125°C 17
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 600 — — V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.49 — V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage — 2.27 2.8 IC = 9.0A VGE = 15V
— 3.01 — V IC = 16A See Fig. 2, 5
— 2.43 — IC = 9.0A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -10 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance T 2.9 4.3 — S VCE = 100V, IC = 9.0A
ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop — 1.4 1.7 V IC = 8.0A See Fig. 13
— 1.3 1.6 IC = 8.0A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ns
ns
IRG4BC20KD
www.irf.com 3
0.1 1 10 100
0
2
4
6
8
10
f, Frequency (KHz)
LOADCURRENT(A)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
For both:
Duty cycle: 50%
T = 125°C
T = 90°C
Gate drive as specified
sink
J
Power Dissipation = W
60% of rated
voltage
I
Ideal diodes
Square wave:
13
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
1
10
100
1 10
V , Collector-to-Emitter Voltage (V)
I,Collector-to-EmitterCurrent(A)
CE
C
V = 15V
20µs PULSE WIDTH
GE
T = 25 CJ
o
T = 150 CJ
o
1
10
100
5 10 15 20
V , Gate-to-Emitter Voltage (V)
I,Collector-to-EmitterCurrent(A)
GE
C
V = 50V
5µs PULSE WIDTH
CC
T = 25 CJ
o
T = 150 CJ
o
IRG4BC20KD
4 www.irf.com
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
-60 -40 -20 0 20 40 60 80 100 120 140 160
1.0
2.0
3.0
4.0
5.0
T , Junction Temperature ( C)
V,Collector-to-EmitterVoltage(V)
J °
CE
V = 15V
80 us PULSE WIDTH
GE
I = A4.5C
I = A9C
I = A18C
25 50 75 100 125 150
0
5
10
15
20
T , Case Temperature ( C)
MaximumDCCollectorCurrent(A)
C °
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
ThermalResponse(Z)
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
9.0A
IRG4BC20KD
www.irf.com 5
0 10 20 30 40 50
0.5
0.6
0.7
0.8
R , Gate Resistance (Ohm)
TotalSwitchingLosses(mJ)
G

V = 480V
V = 15V
T = 25 C
I = 9.0A
CC
GE
J
C
°
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0 10 20 30 40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V,Gate-to-EmitterVoltage(V)
G
GE
V = 400V
I = 9.0A
CC
C
1 10 100
0
200
400
600
800
V , Collector-to-Emitter Voltage (V)
C,Capacitance(pF)
CE

V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies ge gc , ce
res gc
oes ce gc
Cies
Coes
Cres
RG , Gate Resistance ( Ω )
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
TotalSwitchingLosses(mJ)
J °

R = Ohm
V = 15V
V = 480V
G
GE
CC
I = A18C
I = A9C
I = A4.5C
50Ω
9.0A
IRG4BC20KD
6 www.irf.com
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
1
10
100
1 10 100 1000
V = 20V
T = 125 C
GE
J
o
V , Collector-to-Emitter Voltage (V)I,Collector-to-EmitterCurrent(A) CEC
SAFE OPERATING AREA
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
0.1
1
10
100
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
FM
FInstantaneousForwardCurrent-I(A)
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
0 4 8 12 16 20
0.0
1.0
2.0
3.0
I , Collector-to-emitter Current (A)
TotalSwitchingLosses(mJ)
C

R = Ohm
T = 150 C
V = 480V
V = 15V
G
J
CC
GE
°
50Ω
IRG4BC20KD
www.irf.com 7
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt
0
100
200
300
400
500
100 1000
fdi /dt - (A/µs)
RRQ-(nC)
I = 16A
I = 8.0A
I = 4.0AF
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
100
1000
10000
100 1000
fdi /dt - (A/µs)
di(rec)M/dt-(A/µs)
I = 16A
I = 8.0A
I = 4.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
0
20
40
60
80
100
100 1000
fdi /dt - (A/µs)
t-(ns)rr
I = 16A
I = 8.0A
I = 4.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
1
10
100
100 1000
fdi /dt - (A/µs)
I-(A)IRRM
I = 16A
I = 8.0A
I = 4.0AF
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
IRG4BC20KD
8 www.irf.com
Same type
device as
D.U.T.
D.U.T.
430µF
80%
of Vce
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
Ic
Vce
t1 t2
90% Ic
10% Vce
td(off) tf
Ic
5% Ic
t1+5µS
Vce ic dt
90% Vge
+Vge
∫Eoff =
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
∫Vce ie dt
t2
t1
5% Vce
Ic
IpkVcc
10% Ic
Vce
t1 t2
D UT VO LTAGE
AN D CU RRE NT
GATE VOLTA GE D .U .T.
+Vg
10% +Vg
90% Ic
trtd(on)
DIO DE REVE RSE
REC OVERY ENER GY
tx
E on =
∫Erec =
t4
t3
Vd id dt
t4t3
DIODE RE COV ERY
W AVEFO RMS
Ic
V pk
10% Vcc
Irr
10% Irr
Vcc
trr
∫Q rr =
trr
tx
id dt
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Vd Ic dt
Vce Ic dt
Ic dt
Vce Ic dt
IRG4BC20KD
www.irf.com 9
Vg GATE SIG NAL
DEVICE U NDE R TEST
CUR REN T D .U .T.
VOLTAGE IN D.U.T.
CUR REN T IN D1
t0 t1 t2
D.U.T.
V *c
50V
L
1000V
6000µF
100V
Figure 19. Clamped Inductive Load Test
Circuit
Figure 20. Pulsed Collector Current
Test Circuit
RL=
480V
4 X IC @25°C
0 - 480V
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
IRG4BC20KD
10 www.irf.com
Notes:
QRepetitiverating:VGE=20V;pulsewidthlimitedbymaximumjunctiontemperature
(figure20)
RVCC=80%(VCES),VGE=20V,L=10µH,RG=50Ω(figure19)
SPulsewidth≤80µs;dutyfactor≤0.1%.
TPulsewidth5.0µs,singleshot.
Case Outline — TO-220AB
0.55 (.022)
0.46 (.018)
3 X
2.92 (.115)
2.64 (.104)
1.32 (.052)
1.22 (.048)
- B -
4.69 (.185)
4.20 (.165)
3.78 (.149)
3.54 (.139)
- A -
6.47 (.255)
6.10 (.240)
1.15 (.045)
MIN
4.06 (.160)
3.55 (.140)
3 X
3.96 (.160)
3.55 (.140)
3 X
0.93 (.037)
0.69 (.027)
0.36 (.014) M B A M
10.54 (.415)
10.29 (.405)2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
1.40 (.055)
1.15 (.045)3 X
2.54 (.100)
2X
1 2 3
4
CONFORMS TO JEDEC OUTLINE TO-220AB
Dim ensions in M illim eters and (Inches)
LEAD ASSIGNM ENT S
1 - GATE
2 - COLLE CTO R
3 - EM IT TER
4 - COLLE CTO R
NO TES:
1 DIM ENSIONS  T OLERANCING
PER ANSI Y14.5M , 1982.
2 CO NTR OLLIN G DIM ENSION : INCH.
3 DIM ENSIONS ARE SHO W N
M ILLIM ETER S (IN CHES ).
4 CO NFO RM S TO JEDEC OU TLINE
T O-220AB.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: KH Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/

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Original IGBT FGP20N60 20N60 FGP20N60UFD 20A 600V TO-220 New
 
Original N-Channel IGBT GIB10B60KD1 GIB10B60KDI 10A 600V TO-220F New IR
Original N-Channel IGBT GIB10B60KD1 GIB10B60KDI 10A 600V TO-220F New IROriginal N-Channel IGBT GIB10B60KD1 GIB10B60KDI 10A 600V TO-220F New IR
Original N-Channel IGBT GIB10B60KD1 GIB10B60KDI 10A 600V TO-220F New IR
 
Original Mosfet AOD5B60D D5B60D 600V 5A TO-252 New
Original Mosfet AOD5B60D D5B60D 600V 5A TO-252 NewOriginal Mosfet AOD5B60D D5B60D 600V 5A TO-252 New
Original Mosfet AOD5B60D D5B60D 600V 5A TO-252 New
 
Original IGBT STGP6NC60HD GP6NC60 6N60 600V 15A TO-220 New STMicroelectronics
Original IGBT STGP6NC60HD GP6NC60 6N60 600V 15A TO-220 New STMicroelectronicsOriginal IGBT STGP6NC60HD GP6NC60 6N60 600V 15A TO-220 New STMicroelectronics
Original IGBT STGP6NC60HD GP6NC60 6N60 600V 15A TO-220 New STMicroelectronics
 
Original IGBT STGP6NC60HD 6N60 600V 15A TO-220 New STMicroelectronics
Original IGBT STGP6NC60HD 6N60 600V 15A TO-220 New STMicroelectronicsOriginal IGBT STGP6NC60HD 6N60 600V 15A TO-220 New STMicroelectronics
Original IGBT STGP6NC60HD 6N60 600V 15A TO-220 New STMicroelectronics
 
CM1000E4C-66R Datasheet (English)
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CM1000E4C-66R Datasheet (English)
 
Original N-CHANNEL IGBT IRGS4B60KD1TRRP GS4B60KD1 600V 7.6A TO-263-3 New IR
Original N-CHANNEL IGBT IRGS4B60KD1TRRP GS4B60KD1 600V 7.6A TO-263-3 New IROriginal N-CHANNEL IGBT IRGS4B60KD1TRRP GS4B60KD1 600V 7.6A TO-263-3 New IR
Original N-CHANNEL IGBT IRGS4B60KD1TRRP GS4B60KD1 600V 7.6A TO-263-3 New IR
 
Original IGBT Transistor FGA15N120ANTDTU 1200V 24A TO-3P New ON Semiconductor...
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Original IGBT IC IRGIB10B60KD1P 600V 21A New Infineon IR
Original IGBT IC IRGIB10B60KD1P 600V 21A New Infineon IROriginal IGBT IC IRGIB10B60KD1P 600V 21A New Infineon IR
Original IGBT IC IRGIB10B60KD1P 600V 21A New Infineon IR
 
Original IGBT TGPF30N43P TGPF30N43 30N43 30N43P 450V 60A TO-220F New TRinno
Original IGBT TGPF30N43P TGPF30N43 30N43 30N43P 450V 60A TO-220F New TRinnoOriginal IGBT TGPF30N43P TGPF30N43 30N43 30N43P 450V 60A TO-220F New TRinno
Original IGBT TGPF30N43P TGPF30N43 30N43 30N43P 450V 60A TO-220F New TRinno
 
Original IGBT IRG4BC30FD-S 31A 600V TO-263 New IR
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Original IGBT IRG4BC30FD-S 31A 600V TO-263 New IR
 
Original IGBT Transistor IHW25N1202R2 H25R1202 25A 1200V TO-247 New Infineon ...
Original IGBT Transistor IHW25N1202R2 H25R1202 25A 1200V TO-247 New Infineon ...Original IGBT Transistor IHW25N1202R2 H25R1202 25A 1200V TO-247 New Infineon ...
Original IGBT Transistor IHW25N1202R2 H25R1202 25A 1200V TO-247 New Infineon ...
 
Original Mosfet IRFB18N50KPBF IRFB18N50K FB18N50K 18N50K 500V 17A TO-220 New ...
Original Mosfet IRFB18N50KPBF IRFB18N50K FB18N50K 18N50K 500V 17A TO-220 New ...Original Mosfet IRFB18N50KPBF IRFB18N50K FB18N50K 18N50K 500V 17A TO-220 New ...
Original Mosfet IRFB18N50KPBF IRFB18N50K FB18N50K 18N50K 500V 17A TO-220 New ...
 
Original N-Channel Mosfet IRF2907ZPBF 2907 75V 170A TO-220 New IR
Original N-Channel Mosfet IRF2907ZPBF 2907 75V 170A TO-220 New IROriginal N-Channel Mosfet IRF2907ZPBF 2907 75V 170A TO-220 New IR
Original N-Channel Mosfet IRF2907ZPBF 2907 75V 170A TO-220 New IR
 
Original Opto TLP620GB TLP620 P620 620 DIP-4 New ToshibaOriginal Opto TLP620G...
Original Opto TLP620GB TLP620 P620 620 DIP-4 New ToshibaOriginal Opto TLP620G...Original Opto TLP620GB TLP620 P620 620 DIP-4 New ToshibaOriginal Opto TLP620G...
Original Opto TLP620GB TLP620 P620 620 DIP-4 New ToshibaOriginal Opto TLP620G...
 
Original N-Channel Mosfet R6020ANX 6020 600V 20A TO-220 New ROHM Semiconductor
Original N-Channel Mosfet R6020ANX 6020 600V 20A TO-220 New ROHM SemiconductorOriginal N-Channel Mosfet R6020ANX 6020 600V 20A TO-220 New ROHM Semiconductor
Original N-Channel Mosfet R6020ANX 6020 600V 20A TO-220 New ROHM Semiconductor
 
Original N-CHANNEL IGBT GB10NC60KD STGB10NC60KDT4 10A 600V TO-263 New STMicro...
Original N-CHANNEL IGBT GB10NC60KD STGB10NC60KDT4 10A 600V TO-263 New STMicro...Original N-CHANNEL IGBT GB10NC60KD STGB10NC60KDT4 10A 600V TO-263 New STMicro...
Original N-CHANNEL IGBT GB10NC60KD STGB10NC60KDT4 10A 600V TO-263 New STMicro...
 
Original 40V N-Channel MOSFET AOD4184 AOD4184L 4184 50A 40V TO-252 New Alpha ...
Original 40V N-Channel MOSFET AOD4184 AOD4184L 4184 50A 40V TO-252 New Alpha ...Original 40V N-Channel MOSFET AOD4184 AOD4184L 4184 50A 40V TO-252 New Alpha ...
Original 40V N-Channel MOSFET AOD4184 AOD4184L 4184 50A 40V TO-252 New Alpha ...
 
Original N-CHANNEL MOSFET SPP20N60C3 20N60C3 20N60 20A 600V TO-220 New Infine...
Original N-CHANNEL MOSFET SPP20N60C3 20N60C3 20N60 20A 600V TO-220 New Infine...Original N-CHANNEL MOSFET SPP20N60C3 20N60C3 20N60 20A 600V TO-220 New Infine...
Original N-CHANNEL MOSFET SPP20N60C3 20N60C3 20N60 20A 600V TO-220 New Infine...
 

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Original IGBT IKB06N60T K06T60 06T60 06N60 6N60 TO-263 New Infineon
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Original IGBT IKA10N60T K10T60 10T60 600V 10A TO-220 New Infineon
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Original N-Channel Mosfet IRFB3077PBF IRFB3077 3077 75V 120A TO-220 New IR
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Original IGBT N-CHANNEL IRG7R313U 7R313U 330V 160A TO-252 New
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Original Mosfet IRF7493TRPBF IRF7493 F7493 7493 SOP-8 New IR
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Original N - Channel Mosfet IRLR120NTRPBF LR120 LR120N 100V TO-252 New IR
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Original Mosfet N-Channel SVF740T 740 400V 10A TO-220 New
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Original IGBT N-CHANNEL STGP7NC60HD GP7NC60HD 7NC60 14A 600V TO-220 New
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Original IGBT STGF14NC60KD STGF14NC60 14NC60 14A 600V TO-220 New STmicroelect...Original IGBT STGF14NC60KD STGF14NC60 14NC60 14A 600V TO-220 New STmicroelect...
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Original IGBT IRG4BC20KD G4BC20KD 600V 9A TO-220 New

  • 1. Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 16 IC @ TC = 100°C Continuous Collector Current 9.0 ICM Pulsed Collector Current Q 32 A ILM Clamped Inductive Load Current R 32 IF @ TC = 100°C Diode Continuous Forward Current 7.0 IFM Diode Maximum Forward Current 32 tsc Short Circuit Withstand Time 10 µs VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 60 PD @ TC = 100°C Maximum Power Dissipation 24 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m) IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE FeaturesFeaturesFeaturesFeaturesFeatures E G n-channel C VCES = 600V VCE(on) typ. = 2.27V @VGE = 15V, IC = 9.0A Short Circuit Rated UltraFast IGBT 4/24/2000 • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package Benefits PD -91599A Parameter Min. Typ. Max. Units RθJC Junction-to-Case - IGBT ––– ––– 2.1 RθJC Junction-to-Case - Diode ––– ––– 3.5 °C/W RθCS Case-to-Sink, flat, greased surface ––– 0.50 ––– RθJA Junction-to-Ambient, typical socket mount ––– ––– 80 Wt Weight ––– 2 (0.07) ––– g (oz) Thermal Resistance Absolute Maximum Ratings W TO-220AB • Latest generation 4 IGBTs offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses • This part replaces the IRGBC20KD2 and IRGBC20MD2 products • For hints see design tip 97003 www.irf.com 1
  • 2. IRG4BC20KD 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 34 51 IC = 9.0A Qge Gate - Emitter Charge (turn-on) — 4.9 7.4 nC VCC = 400V See Fig.8 Qgc Gate - Collector Charge (turn-on) — 14 21 VGE = 15V td(on) Turn-On Delay Time — 54 — tr Rise Time — 34 — TJ = 25°C td(off) Turn-Off Delay Time — 180 270 IC = 9.0A, VCC = 480V tf Fall Time — 72 110 VGE = 15V, RG = 50Ω Eon Turn-On Switching Loss — 0.34 — Energy losses include "tail" Eoff Turn-Off Switching Loss — 0.30 — mJ and diode reverse recovery Ets Total Switching Loss — 0.64 0.96 See Fig. 9,10,14 tsc Short Circuit Withstand Time 10 — — µs VCC = 360V, TJ = 125°C VGE = 15V, RG = 50Ω , VCPK < 500V td(on) Turn-On Delay Time — 51 — TJ = 150°C, See Fig. 11,14 tr Rise Time — 37 — IC = 9.0A, VCC = 480V td(off) Turn-Off Delay Time — 220 — VGE = 15V, RG = 50Ω tf Fall Time — 160 — Energy losses include "tail" Ets Total Switching Loss — 0.85 — mJ and diode reverse recovery LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package Cies Input Capacitance — 450 — VGE = 0V Coes Output Capacitance — 61 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 14 — ƒ = 1.0MHz trr Diode Reverse Recovery Time — 37 55 ns TJ = 25°C See Fig. — 55 90 TJ = 125°C 14 IF = 8.0A Irr Diode Peak Reverse Recovery Current — 3.5 5.0 A TJ = 25°C See Fig. — 4.5 8.0 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge — 65 138 nC TJ = 25°C See Fig. — 124 360 TJ = 125°C 16 di/dt = 200Aµs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 240 — A/µs TJ = 25°C See Fig. During tb — 210 — TJ = 125°C 17 Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown VoltageS 600 — — V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.49 — V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 2.27 2.8 IC = 9.0A VGE = 15V — 3.01 — V IC = 16A See Fig. 2, 5 — 2.43 — IC = 9.0A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -10 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance T 2.9 4.3 — S VCE = 100V, IC = 9.0A ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V — — 1000 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop — 1.4 1.7 V IC = 8.0A See Fig. 13 — 1.3 1.6 IC = 8.0A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ns ns
  • 3. IRG4BC20KD www.irf.com 3 0.1 1 10 100 0 2 4 6 8 10 f, Frequency (KHz) LOADCURRENT(A) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) For both: Duty cycle: 50% T = 125°C T = 90°C Gate drive as specified sink J Power Dissipation = W 60% of rated voltage I Ideal diodes Square wave: 13 Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 1 10 100 1 10 V , Collector-to-Emitter Voltage (V) I,Collector-to-EmitterCurrent(A) CE C V = 15V 20µs PULSE WIDTH GE T = 25 CJ o T = 150 CJ o 1 10 100 5 10 15 20 V , Gate-to-Emitter Voltage (V) I,Collector-to-EmitterCurrent(A) GE C V = 50V 5µs PULSE WIDTH CC T = 25 CJ o T = 150 CJ o
  • 4. IRG4BC20KD 4 www.irf.com Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 4.0 5.0 T , Junction Temperature ( C) V,Collector-to-EmitterVoltage(V) J ° CE V = 15V 80 us PULSE WIDTH GE I = A4.5C I = A9C I = A18C 25 50 75 100 125 150 0 5 10 15 20 T , Case Temperature ( C) MaximumDCCollectorCurrent(A) C ° 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C P t t DM 1 2 t , Rectangular Pulse Duration (sec) ThermalResponse(Z) 1 thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE) 9.0A
  • 5. IRG4BC20KD www.irf.com 5 0 10 20 30 40 50 0.5 0.6 0.7 0.8 R , Gate Resistance (Ohm) TotalSwitchingLosses(mJ) G V = 480V V = 15V T = 25 C I = 9.0A CC GE J C ° Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature 0 10 20 30 40 0 4 8 12 16 20 Q , Total Gate Charge (nC) V,Gate-to-EmitterVoltage(V) G GE V = 400V I = 9.0A CC C 1 10 100 0 200 400 600 800 V , Collector-to-Emitter Voltage (V) C,Capacitance(pF) CE V C C C = = = = 0V, C C C f = 1MHz + C + C C SHORTED GE ies ge gc , ce res gc oes ce gc Cies Coes Cres RG , Gate Resistance ( Ω ) -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 T , Junction Temperature ( C ) TotalSwitchingLosses(mJ) J ° R = Ohm V = 15V V = 480V G GE CC I = A18C I = A9C I = A4.5C 50Ω 9.0A
  • 6. IRG4BC20KD 6 www.irf.com Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 1 10 100 1 10 100 1000 V = 20V T = 125 C GE J o V , Collector-to-Emitter Voltage (V)I,Collector-to-EmitterCurrent(A) CEC SAFE OPERATING AREA Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 0.1 1 10 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 FM FInstantaneousForwardCurrent-I(A) Forward Voltage Drop - V (V) T = 150°C T = 125°C T = 25°C J J J 0 4 8 12 16 20 0.0 1.0 2.0 3.0 I , Collector-to-emitter Current (A) TotalSwitchingLosses(mJ) C R = Ohm T = 150 C V = 480V V = 15V G J CC GE ° 50Ω
  • 7. IRG4BC20KD www.irf.com 7 Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt 0 100 200 300 400 500 100 1000 fdi /dt - (A/µs) RRQ-(nC) I = 16A I = 8.0A I = 4.0AF F F V = 200V T = 125°C T = 25°C R J J 100 1000 10000 100 1000 fdi /dt - (A/µs) di(rec)M/dt-(A/µs) I = 16A I = 8.0A I = 4.0A F F F V = 200V T = 125°C T = 25°C R J J 0 20 40 60 80 100 100 1000 fdi /dt - (A/µs) t-(ns)rr I = 16A I = 8.0A I = 4.0A F F F V = 200V T = 125°C T = 25°C R J J 1 10 100 100 1000 fdi /dt - (A/µs) I-(A)IRRM I = 16A I = 8.0A I = 4.0AF F F V = 200V T = 125°C T = 25°C R J J
  • 8. IRG4BC20KD 8 www.irf.com Same type device as D.U.T. D.U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 Ic Vce t1 t2 90% Ic 10% Vce td(off) tf Ic 5% Ic t1+5µS Vce ic dt 90% Vge +Vge ∫Eoff = Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf ∫Vce ie dt t2 t1 5% Vce Ic IpkVcc 10% Ic Vce t1 t2 D UT VO LTAGE AN D CU RRE NT GATE VOLTA GE D .U .T. +Vg 10% +Vg 90% Ic trtd(on) DIO DE REVE RSE REC OVERY ENER GY tx E on = ∫Erec = t4 t3 Vd id dt t4t3 DIODE RE COV ERY W AVEFO RMS Ic V pk 10% Vcc Irr 10% Irr Vcc trr ∫Q rr = trr tx id dt Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr Vd Ic dt Vce Ic dt Ic dt Vce Ic dt
  • 9. IRG4BC20KD www.irf.com 9 Vg GATE SIG NAL DEVICE U NDE R TEST CUR REN T D .U .T. VOLTAGE IN D.U.T. CUR REN T IN D1 t0 t1 t2 D.U.T. V *c 50V L 1000V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit RL= 480V 4 X IC @25°C 0 - 480V Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
  • 10. IRG4BC20KD 10 www.irf.com Notes: QRepetitiverating:VGE=20V;pulsewidthlimitedbymaximumjunctiontemperature (figure20) RVCC=80%(VCES),VGE=20V,L=10µH,RG=50Ω(figure19) SPulsewidth≤80µs;dutyfactor≤0.1%. TPulsewidth5.0µs,singleshot. Case Outline — TO-220AB 0.55 (.022) 0.46 (.018) 3 X 2.92 (.115) 2.64 (.104) 1.32 (.052) 1.22 (.048) - B - 4.69 (.185) 4.20 (.165) 3.78 (.149) 3.54 (.139) - A - 6.47 (.255) 6.10 (.240) 1.15 (.045) MIN 4.06 (.160) 3.55 (.140) 3 X 3.96 (.160) 3.55 (.140) 3 X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 10.54 (.415) 10.29 (.405)2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 1.40 (.055) 1.15 (.045)3 X 2.54 (.100) 2X 1 2 3 4 CONFORMS TO JEDEC OUTLINE TO-220AB Dim ensions in M illim eters and (Inches) LEAD ASSIGNM ENT S 1 - GATE 2 - COLLE CTO R 3 - EM IT TER 4 - COLLE CTO R NO TES: 1 DIM ENSIONS T OLERANCING PER ANSI Y14.5M , 1982. 2 CO NTR OLLIN G DIM ENSION : INCH. 3 DIM ENSIONS ARE SHO W N M ILLIM ETER S (IN CHES ). 4 CO NFO RM S TO JEDEC OU TLINE T O-220AB. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: KH Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00
  • 11. Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/