This document summarizes a study on the morphological changes of cobalt-silicon (CoxSi1-x) binary mixtures under low energy argon ion bombardment. Cobalt-silicon thin films with varying stoichiometries were sputtered onto silicon substrates and bombarded with argon ions at energies between 500-1200 eV and fluences up to 1019 ions/cm2. Well-ordered nanoscale ripples formed at 500-700 eV, which transformed into larger ellipsoidal structures at higher energies. Ripple wavelength increased with fluence. Samples with higher cobalt content developed hierarchical "bug-like" structures. Increasing ion energy and cobalt content resulted in less ordered nanopatterns.
Investigation of Effect Ion Refocusing From the GaP(001)<110> Surface at the ...ijtsrd
The effect ion refocusing at the small angle scattering Ne+ ions from the GaP(001) surface have been studied by the computer simulation method. The characteristic trajectories refocusing ions have been studied. Kutliev UchkunOtoboevich | Tangriberganov Ismoil Urazboyevich | Karimov Muxtor Karimberganovich | Otaboeva Kamola Uchqun qizi"Investigation of Effect Ion Refocusing From the GaP(001) Surface at the Grazing Incidence Ne+ Ions" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-1 | Issue-5 , August 2017, URL: http://www.ijtsrd.com/papers/ijtsrd2397.pdf http://www.ijtsrd.com/physics/computational-physics/2397/investigation-of-effect-ion-refocusing-from-the-gap001110-surface--at-the-grazing-incidence-ne-ions/kutliev-uchkunotoboevich
Investigation of Effect Ion Refocusing From the GaP(001)<110> Surface at the ...ijtsrd
The effect ion refocusing at the small angle scattering Ne+ ions from the GaP(001) surface have been studied by the computer simulation method. The characteristic trajectories refocusing ions have been studied. Kutliev UchkunOtoboevich | Tangriberganov Ismoil Urazboyevich | Karimov Muxtor Karimberganovich | Otaboeva Kamola Uchqun qizi"Investigation of Effect Ion Refocusing From the GaP(001) Surface at the Grazing Incidence Ne+ Ions" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-1 | Issue-5 , August 2017, URL: http://www.ijtsrd.com/papers/ijtsrd2397.pdf http://www.ijtsrd.com/physics/computational-physics/2397/investigation-of-effect-ion-refocusing-from-the-gap001110-surface--at-the-grazing-incidence-ne-ions/kutliev-uchkunotoboevich
1-D Electrical Resistivity Survey For Groundwater In Ketu-Adie Owe, Ogun Stat...iosrjce
This research involved the use of 1-D electrical resistivity survey method for groundwater
investigation in Ketu-Adie Owe, Ogun State. Seven (7) vertical electrical resistivity soundings (VES) using
Schlumberger array were carried out at different locations. The Schlumberger resistivity soundings were
executed with half-spacing in the range of 1.00 – 100.00 metres. The curve types are AAK, AAK, KHAK, AKQ,
KQH, AK. The study shows that viable aquifer is within 17.30 – 52.90 metres square.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
The Evaluation of p-type doping in ZnO taking Co as dopantIOSR Journals
P-type doping is excessively difficult in wide-band gap semiconductors, such as GaN, ZnSe, and
indeed ZnO. Practically it is very difficult to obtain stable and true p-type ZnO. Under standard conditions there
are reports on decaying or even completely absent p-type conductivity. Several hypotheses have been
formulated to explain this unusual behaviour. The commonly accepted theory is that the elements assume
undesired (non-substitutional) positions or form complexes, resulting in self-compensation of the p-type
conductivity. Note that p-dopants can be compensated by low energy native defects, such as Zni or VO, or
background impurities, such as aforementioned H. Deep impurity levels can cause significant resistance to the
formation of a shallow acceptor level. In this work the p-type doped Zno based samples are prepared where
incorporation of Co into the ZnO crystal lattice is done and various measurements like Sheet resistivity, Hall
Voltage, Hall mobility and 2d hole concentration are made. From the results it has been clearly found that the
p-type doping takes place successfully and can be used for various future applications
Electron Diffusion and Phonon Drag Thermopower in Silicon NanowiresAI Publications
The field of thermoelectric research has undergone a renaissance and boom in the fast two decades, largely fueled by the prospect of engineering electronic and phononic properties in nanostructures, among which semiconductor nanowires (NWs) have served both as an important platform to investigate fundamental thermoelectric transport phenomena and as a promising route for high thermoelectric performance for device applications. In this report we theoretical studied the carrier diffusion and phonon-drag contribution to thermoelectric performance of silicon nanowires and compared with the existing experimental data. We observed a good agreement between theoretical data and experimental observations in the overall temperature range from 50 – 350 K. Electron diffusion thermopower is found to be dominant mechanism in the low temperature range and shows linear dependence with temperature.
Accurate Dielectric Capacitance Determination from MetalInsulator-Semiconduct...IOSRJEEE
: A model for MIS device in accumulation is proposed which includes a bias and frequency dependent conductance in parallel with the insulator capacitance due to the leakage current. The model is validated by experimental results on MOS structures fabricated on n<100>Si having about 9 nm dry thermal oxide. The real and imaginary impedance versus frequency plots of such MOS device having large conductance can be used to determine accurately the oxide capacitance and consequently the oxide thickness without the use of ellipsometer. Greatly reduced MIS dot area can assist in avoiding frequency dispersion in accumulation capacitance, particularly at small-signal frequency of 1 MHz which is commonly used for generating high frequency C-V plots.
Rosa alejandra lukaszew tests of the gurenvich odel toward larger field gra...thinfilmsworkshop
SRF properties are inherently a surface phenomenon involving a material thickness of a few microns thus opening up the possibility of using thin film coatings to achieve a desired performance. I will describe our experimental attempts to test the superconducting/insulating/superconducting (SIS) multilayer model proposed by A. Gurevich [1] to shield the bulk of the cavity from vortex penetration and hence enable larger accelerating fields than presently possible.
The Albedo of Metallic Nanoparticles Computed from FDTDAI Publications
This manuscript presents the albedo, a measure of a nanoparticles light retention capability, for silver, aluminum, gold, chromium, copper, nickel and titanium throughout the visible spectrum. Lumerical’s finite-difference time-domain Maxwell’s equation solver was employed to analyze how light of various angles and polarizations interacts with such materials in three dimensions. All of the particles in this study are 50 nm in radius.
1-D Electrical Resistivity Survey For Groundwater In Ketu-Adie Owe, Ogun Stat...iosrjce
This research involved the use of 1-D electrical resistivity survey method for groundwater
investigation in Ketu-Adie Owe, Ogun State. Seven (7) vertical electrical resistivity soundings (VES) using
Schlumberger array were carried out at different locations. The Schlumberger resistivity soundings were
executed with half-spacing in the range of 1.00 – 100.00 metres. The curve types are AAK, AAK, KHAK, AKQ,
KQH, AK. The study shows that viable aquifer is within 17.30 – 52.90 metres square.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
The Evaluation of p-type doping in ZnO taking Co as dopantIOSR Journals
P-type doping is excessively difficult in wide-band gap semiconductors, such as GaN, ZnSe, and
indeed ZnO. Practically it is very difficult to obtain stable and true p-type ZnO. Under standard conditions there
are reports on decaying or even completely absent p-type conductivity. Several hypotheses have been
formulated to explain this unusual behaviour. The commonly accepted theory is that the elements assume
undesired (non-substitutional) positions or form complexes, resulting in self-compensation of the p-type
conductivity. Note that p-dopants can be compensated by low energy native defects, such as Zni or VO, or
background impurities, such as aforementioned H. Deep impurity levels can cause significant resistance to the
formation of a shallow acceptor level. In this work the p-type doped Zno based samples are prepared where
incorporation of Co into the ZnO crystal lattice is done and various measurements like Sheet resistivity, Hall
Voltage, Hall mobility and 2d hole concentration are made. From the results it has been clearly found that the
p-type doping takes place successfully and can be used for various future applications
Electron Diffusion and Phonon Drag Thermopower in Silicon NanowiresAI Publications
The field of thermoelectric research has undergone a renaissance and boom in the fast two decades, largely fueled by the prospect of engineering electronic and phononic properties in nanostructures, among which semiconductor nanowires (NWs) have served both as an important platform to investigate fundamental thermoelectric transport phenomena and as a promising route for high thermoelectric performance for device applications. In this report we theoretical studied the carrier diffusion and phonon-drag contribution to thermoelectric performance of silicon nanowires and compared with the existing experimental data. We observed a good agreement between theoretical data and experimental observations in the overall temperature range from 50 – 350 K. Electron diffusion thermopower is found to be dominant mechanism in the low temperature range and shows linear dependence with temperature.
Accurate Dielectric Capacitance Determination from MetalInsulator-Semiconduct...IOSRJEEE
: A model for MIS device in accumulation is proposed which includes a bias and frequency dependent conductance in parallel with the insulator capacitance due to the leakage current. The model is validated by experimental results on MOS structures fabricated on n<100>Si having about 9 nm dry thermal oxide. The real and imaginary impedance versus frequency plots of such MOS device having large conductance can be used to determine accurately the oxide capacitance and consequently the oxide thickness without the use of ellipsometer. Greatly reduced MIS dot area can assist in avoiding frequency dispersion in accumulation capacitance, particularly at small-signal frequency of 1 MHz which is commonly used for generating high frequency C-V plots.
Rosa alejandra lukaszew tests of the gurenvich odel toward larger field gra...thinfilmsworkshop
SRF properties are inherently a surface phenomenon involving a material thickness of a few microns thus opening up the possibility of using thin film coatings to achieve a desired performance. I will describe our experimental attempts to test the superconducting/insulating/superconducting (SIS) multilayer model proposed by A. Gurevich [1] to shield the bulk of the cavity from vortex penetration and hence enable larger accelerating fields than presently possible.
The Albedo of Metallic Nanoparticles Computed from FDTDAI Publications
This manuscript presents the albedo, a measure of a nanoparticles light retention capability, for silver, aluminum, gold, chromium, copper, nickel and titanium throughout the visible spectrum. Lumerical’s finite-difference time-domain Maxwell’s equation solver was employed to analyze how light of various angles and polarizations interacts with such materials in three dimensions. All of the particles in this study are 50 nm in radius.
Study of Microstructural, Electrical and Dielectric Properties of La0.9Pb0.1M...Scientific Review SR
The present work studies the microstructural and electrical properties of La0.9Pb0.1MnO3 and La0.8Y0.1Pb0.1MnO3 ceramics synthesized by solid-state route method. Microstructure and elemental analysis of both samples were carried out by field emission scanning electron microscope (FESEM) and energy dispersive spectroscopy (EDS) method, respectively. Phase analysis by X-ray diffraction (XRD) indicated formation of single phase distorted structure. The XRD data were further analyzed by Rietveld refinement technique. Raman analysis reveals that Y atom substitutes La site into the LPMO with shifting of phonon modes. The temperature variation of resistivity of undoped and Y-doped La0.9Pb0.1MnO3 samples have been investigated. The electrical resistivity as a function of temperature showed that all samples undergo an metal-insulator (M-I) transition having a peak at transition temperature TMI. Y-doping increases the resistivity and the metal-insulator transition temperature (TMI) shifts to lower temperature. The temperature-dependent resistivity for temperatures less than metal-insulator transition is explained in terms the quadratic temperature dependence and for T > TMI, thermally activated conduction (TAC) is appropriate. Variation of frequency dispersion in permittivity and loss pattern due to La-site substitution in LPMO was observed in the dielectric response curve.
the effect of nickel incorporation on some physical properties of epoxy resinINFOGAIN PUBLICATION
The J-E characteristics of samples of epoxy resins mixed with nickel powder in different concentrations have been tested and a log-log straight line behaviour in both the low- and high field regions is observed. Ni-concentration has significant influence on the calculated constants of the J-E relationship. The d.c. electrical resistivity (ρ) of the samples are measured from the room temperature up to about 400 K. The variation of ρ with T obeys the exponential relation of ordinary dielectrics in three temperature regions. The parameters characterizing the ρ -T dependence change considerably with Ni-concentration. Due to the existence of nickel in different concentration a "true" compensation effect is observed with three characteristic compensation temperatures. The mechanical hardness of the samples was investigated as a function of Ni-concentration.
Study the effect of Mn2+ ions on the ac electrical properties of some iron do...IJRES Journal
Oxide glasses doped with transition metal ions are of high interest because of their variant applications in both science and technology fields. However, the normal melt quench method have used to prepared some iron doped phosphate glasses according the following molecular formula: (65-x) mol% P2O5 - 20 mol% Na2O - 15 mol% Fe2O3 - x mol% MnO, Where x= 0, 5,10, 20, 25. The room temperature Mössbauer Effect ME Spectra used to characterized the glassy state homogeneity of these glasses. ME spectra show, for all glasses, no magnetic field participate which mean good glassy state formation. The ac electrical transport properties were also measured, as function of temperature up to 500k. It was found that the ac conductivity increased with the gradual increase of Mn2+ cations, while the electrical activation energy decreased.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
High Efficiency Organic Solar Cells Achieved by the Simultaneous Plasmon‐Opti...xingangahu
High Efficiency Organic Solar Cells Achieved by the Simultaneous Plasmon‐Optical and Plasmon‐Electrical Effects from Plasmonic Asymmetric Modes of Gold Nanostars
Optical and Impedance Spectroscopy Study of ZnS NanoparticlesIJMER
International Journal of Modern Engineering Research (IJMER) is Peer reviewed, online Journal. It serves as an international archival forum of scholarly research related to engineering and science education.
International Journal of Modern Engineering Research (IJMER) covers all the fields of engineering and science: Electrical Engineering, Mechanical Engineering, Civil Engineering, Chemical Engineering, Computer Engineering, Agricultural Engineering, Aerospace Engineering, Thermodynamics, Structural Engineering, Control Engineering, Robotics, Mechatronics, Fluid Mechanics, Nanotechnology, Simulators, Web-based Learning, Remote Laboratories, Engineering Design Methods, Education Research, Students' Satisfaction and Motivation, Global Projects, and Assessment…. And many more.
FERROMAGNETIC-FERROELECTRIC COMPOSITE 1D NANOSTRUCTURE IN THE PURSUIT OF MAGN...ijrap
Nanocomposites of linear chain of ferroelectric-ferromagnetic crystal structure is considered. It is analyzed
theoretically in the motion equation method on the pursuit of magnonic excitations,lattice vibration
excitations and their interactions leading to a new collective mode of excitations,the electormagnons. In
this particular work, it is observed that the magnetizations and polarizations are tunable in a given temperature ranges for some specific values of the coupling order parameter.
Ferromagnetic-Ferroelectric Composite 1D Nanostructure in the Pursuit of Magn...ijrap
Nanocomposites of linear chain of ferroelectric-ferromagnetic crystal structure is considered. It is analyzed
theoretically in the motion equation method on the pursuit of magnonic excitations,lattice vibration
excitations and their interactions leading to a new collective mode of excitations,the electormagnons. In
this particular work, it is observed that the magnetizations and polarizations are tunable in a given
temperature ranges for some specific values of the coupling order parameter
Potentiostatic Deposition of ZnO Nanowires: Effect of Applied Potential and Z...IJRES Journal
In this work we report on potentiostatic deposition of Zinc oxide (ZnO) nanowires on fluorine-doped tin oxide (FTO) covered glass substrates from electroreduction of molecular oxygen. The influence of applied deposition potential, and the concentrations of zinc precursor (ZnCl2) on the properties of ZnO nanowires was investigated.SEM results revealed that ZnO nanowires electrodeposited at applied potential -0.85Vhave high density and good alignment. The diameters and densities of the electrodeposited ZnO nanowires are strongly dependent on the zinc ion concentrations and well aligned nanowires with uniform diameter can be obtained when the concentration of zinc ions is between 0.5 mM and 1 mM.
Sputtering yield and nanopattern formation study of BNSiO2 (Borosil) at eleva...Dr. Basanta Kumar Parida
Lower sputtering yield of the discharge wall material is a crucial parameter for the performance of Hall Effect Thruster (HET) [1, 2]. In this article, we report the sputtering yield of HET wall
material BNSiO2 (borosil) at elevated temperature ~600 °C using quartz crystal microbalance (QCM). We observe a linear increase in the sputtering yield with temperature and it remains stable during long duration experiments using Xe ions. Two different crystallographic orientations of borosil give a
slight variation in the yield. The higher yields for higher operating temperatures is proposed to be due to the thermal spike nature. Microscopic surface morphology shows only different grains of BNSiO2, however high resolution nanoscopic view reveals the formation of nanoripple like structures over different grains [3]. The periodicity of such features increases with ion dose (sputtering time) and temperature in the range of 70-190 nm. Local curvature dependent erosion plays crucial role in such pattern formation [4].
Reference:
1. D.M. Goebel, I. Katz, Fundamentals of Electric Propulsion, Ion and Hall Thrusters, 2008.
2. M. Ranjan, A. Sharma, A. Vaid, T. Bhatt, V. Nandalan, M.G. James, H. Revathi, S. Mukherjee, AIP
Adv. 6 (2016) 95224
3. R. M. Bradley, J.M.E. Harper, J. Vac. Sci. Technol. A 6 (1988) 2390
4. B. K. Parida, Sooraj K P, S. Hans, V. Pachchigar, S. Augustine, Remyamol T, M. R. Ajith, M. Ranjan;
Nucl. Inst and Methods B, 514 (2022) 1-7
THE IMPORTANCE OF MARTIAN ATMOSPHERE SAMPLE RETURN.Sérgio Sacani
The return of a sample of near-surface atmosphere from Mars would facilitate answers to several first-order science questions surrounding the formation and evolution of the planet. One of the important aspects of terrestrial planet formation in general is the role that primary atmospheres played in influencing the chemistry and structure of the planets and their antecedents. Studies of the martian atmosphere can be used to investigate the role of a primary atmosphere in its history. Atmosphere samples would also inform our understanding of the near-surface chemistry of the planet, and ultimately the prospects for life. High-precision isotopic analyses of constituent gases are needed to address these questions, requiring that the analyses are made on returned samples rather than in situ.
Richard's entangled aventures in wonderlandRichard Gill
Since the loophole-free Bell experiments of 2020 and the Nobel prizes in physics of 2022, critics of Bell's work have retreated to the fortress of super-determinism. Now, super-determinism is a derogatory word - it just means "determinism". Palmer, Hance and Hossenfelder argue that quantum mechanics and determinism are not incompatible, using a sophisticated mathematical construction based on a subtle thinning of allowed states and measurements in quantum mechanics, such that what is left appears to make Bell's argument fail, without altering the empirical predictions of quantum mechanics. I think however that it is a smoke screen, and the slogan "lost in math" comes to my mind. I will discuss some other recent disproofs of Bell's theorem using the language of causality based on causal graphs. Causal thinking is also central to law and justice. I will mention surprising connections to my work on serial killer nurse cases, in particular the Dutch case of Lucia de Berk and the current UK case of Lucy Letby.
This pdf is about the Schizophrenia.
For more details visit on YouTube; @SELF-EXPLANATORY;
https://www.youtube.com/channel/UCAiarMZDNhe1A3Rnpr_WkzA/videos
Thanks...!
The increased availability of biomedical data, particularly in the public domain, offers the opportunity to better understand human health and to develop effective therapeutics for a wide range of unmet medical needs. However, data scientists remain stymied by the fact that data remain hard to find and to productively reuse because data and their metadata i) are wholly inaccessible, ii) are in non-standard or incompatible representations, iii) do not conform to community standards, and iv) have unclear or highly restricted terms and conditions that preclude legitimate reuse. These limitations require a rethink on data can be made machine and AI-ready - the key motivation behind the FAIR Guiding Principles. Concurrently, while recent efforts have explored the use of deep learning to fuse disparate data into predictive models for a wide range of biomedical applications, these models often fail even when the correct answer is already known, and fail to explain individual predictions in terms that data scientists can appreciate. These limitations suggest that new methods to produce practical artificial intelligence are still needed.
In this talk, I will discuss our work in (1) building an integrative knowledge infrastructure to prepare FAIR and "AI-ready" data and services along with (2) neurosymbolic AI methods to improve the quality of predictions and to generate plausible explanations. Attention is given to standards, platforms, and methods to wrangle knowledge into simple, but effective semantic and latent representations, and to make these available into standards-compliant and discoverable interfaces that can be used in model building, validation, and explanation. Our work, and those of others in the field, creates a baseline for building trustworthy and easy to deploy AI models in biomedicine.
Bio
Dr. Michel Dumontier is the Distinguished Professor of Data Science at Maastricht University, founder and executive director of the Institute of Data Science, and co-founder of the FAIR (Findable, Accessible, Interoperable and Reusable) data principles. His research explores socio-technological approaches for responsible discovery science, which includes collaborative multi-modal knowledge graphs, privacy-preserving distributed data mining, and AI methods for drug discovery and personalized medicine. His work is supported through the Dutch National Research Agenda, the Netherlands Organisation for Scientific Research, Horizon Europe, the European Open Science Cloud, the US National Institutes of Health, and a Marie-Curie Innovative Training Network. He is the editor-in-chief for the journal Data Science and is internationally recognized for his contributions in bioinformatics, biomedical informatics, and semantic technologies including ontologies and linked data.
(May 29th, 2024) Advancements in Intravital Microscopy- Insights for Preclini...Scintica Instrumentation
Intravital microscopy (IVM) is a powerful tool utilized to study cellular behavior over time and space in vivo. Much of our understanding of cell biology has been accomplished using various in vitro and ex vivo methods; however, these studies do not necessarily reflect the natural dynamics of biological processes. Unlike traditional cell culture or fixed tissue imaging, IVM allows for the ultra-fast high-resolution imaging of cellular processes over time and space and were studied in its natural environment. Real-time visualization of biological processes in the context of an intact organism helps maintain physiological relevance and provide insights into the progression of disease, response to treatments or developmental processes.
In this webinar we give an overview of advanced applications of the IVM system in preclinical research. IVIM technology is a provider of all-in-one intravital microscopy systems and solutions optimized for in vivo imaging of live animal models at sub-micron resolution. The system’s unique features and user-friendly software enables researchers to probe fast dynamic biological processes such as immune cell tracking, cell-cell interaction as well as vascularization and tumor metastasis with exceptional detail. This webinar will also give an overview of IVM being utilized in drug development, offering a view into the intricate interaction between drugs/nanoparticles and tissues in vivo and allows for the evaluation of therapeutic intervention in a variety of tissues and organs. This interdisciplinary collaboration continues to drive the advancements of novel therapeutic strategies.
Richard's aventures in two entangled wonderlandsRichard Gill
Since the loophole-free Bell experiments of 2020 and the Nobel prizes in physics of 2022, critics of Bell's work have retreated to the fortress of super-determinism. Now, super-determinism is a derogatory word - it just means "determinism". Palmer, Hance and Hossenfelder argue that quantum mechanics and determinism are not incompatible, using a sophisticated mathematical construction based on a subtle thinning of allowed states and measurements in quantum mechanics, such that what is left appears to make Bell's argument fail, without altering the empirical predictions of quantum mechanics. I think however that it is a smoke screen, and the slogan "lost in math" comes to my mind. I will discuss some other recent disproofs of Bell's theorem using the language of causality based on causal graphs. Causal thinking is also central to law and justice. I will mention surprising connections to my work on serial killer nurse cases, in particular the Dutch case of Lucia de Berk and the current UK case of Lucy Letby.
Slide 1: Title Slide
Extrachromosomal Inheritance
Slide 2: Introduction to Extrachromosomal Inheritance
Definition: Extrachromosomal inheritance refers to the transmission of genetic material that is not found within the nucleus.
Key Components: Involves genes located in mitochondria, chloroplasts, and plasmids.
Slide 3: Mitochondrial Inheritance
Mitochondria: Organelles responsible for energy production.
Mitochondrial DNA (mtDNA): Circular DNA molecule found in mitochondria.
Inheritance Pattern: Maternally inherited, meaning it is passed from mothers to all their offspring.
Diseases: Examples include Leber’s hereditary optic neuropathy (LHON) and mitochondrial myopathy.
Slide 4: Chloroplast Inheritance
Chloroplasts: Organelles responsible for photosynthesis in plants.
Chloroplast DNA (cpDNA): Circular DNA molecule found in chloroplasts.
Inheritance Pattern: Often maternally inherited in most plants, but can vary in some species.
Examples: Variegation in plants, where leaf color patterns are determined by chloroplast DNA.
Slide 5: Plasmid Inheritance
Plasmids: Small, circular DNA molecules found in bacteria and some eukaryotes.
Features: Can carry antibiotic resistance genes and can be transferred between cells through processes like conjugation.
Significance: Important in biotechnology for gene cloning and genetic engineering.
Slide 6: Mechanisms of Extrachromosomal Inheritance
Non-Mendelian Patterns: Do not follow Mendel’s laws of inheritance.
Cytoplasmic Segregation: During cell division, organelles like mitochondria and chloroplasts are randomly distributed to daughter cells.
Heteroplasmy: Presence of more than one type of organellar genome within a cell, leading to variation in expression.
Slide 7: Examples of Extrachromosomal Inheritance
Four O’clock Plant (Mirabilis jalapa): Shows variegated leaves due to different cpDNA in leaf cells.
Petite Mutants in Yeast: Result from mutations in mitochondrial DNA affecting respiration.
Slide 8: Importance of Extrachromosomal Inheritance
Evolution: Provides insight into the evolution of eukaryotic cells.
Medicine: Understanding mitochondrial inheritance helps in diagnosing and treating mitochondrial diseases.
Agriculture: Chloroplast inheritance can be used in plant breeding and genetic modification.
Slide 9: Recent Research and Advances
Gene Editing: Techniques like CRISPR-Cas9 are being used to edit mitochondrial and chloroplast DNA.
Therapies: Development of mitochondrial replacement therapy (MRT) for preventing mitochondrial diseases.
Slide 10: Conclusion
Summary: Extrachromosomal inheritance involves the transmission of genetic material outside the nucleus and plays a crucial role in genetics, medicine, and biotechnology.
Future Directions: Continued research and technological advancements hold promise for new treatments and applications.
Slide 11: Questions and Discussion
Invite Audience: Open the floor for any questions or further discussion on the topic.
2. the above experimental conditions. We found that with increase of
energy, ordering of the pattern formation gets poor above 500 eV. Best
achievable ordering can be found at low energies ∼ 500 eV. We have
also studied the effect of ordering and ripple wavelength behaviour
with increasing ion fluence at 700 eV. Experiments done on samples
with varying Co content revealed hierarchical structures for higher
concentration of Co. Enrichment of Co is found to occur at the hills of
the corrugated surfaces.
2. Experimental details
Commercially available Si (100) substrates were cut into ×1 1 cm2
pieces and ultrasonicated in ethanol for 30 min. CoxSi1−x( < <x0 1)
binary mixture thin films of different stoichiometric ratios were grown
over silicon substrates in a confocal magnetron sputtering chamber at a
base pressure of × −1 10 6 Torr and a working pressure of × −5 10 2 Torr
at room temperature. Sample rotation was performed during deposition
to ensure uniform growth. Argon with a flow rate of 50 sccm was used
as a sputter gas. Scanning electron microscopy-energy dispersive x-ray
analysis was used to get the surface composition of the pre-bombarded
samples from which the stoichiometries of the samples were de-
termined.
The thicknesses of the thin films (∼ 2 μm) were chosen such that
they would not be eroded away at specific energies of ion bombard-
ment. Fig. 1 shows the scanning electron microscopy (SEM) image of
the remnant film after irradiation at 1200 eV, which is the maximum
bombarding energy for our case. The thin films were characterized by x-
ray diffraction (XRD) and atomic force microscopy (AFM) before sub-
jecting them to ion bombardment. Ion irradiation was performed with a
Kaufman ion source in a specially designed vacuum chamber having a
base pressure of × −7.5 10 8 Torr and a working pressure of × −7.5 10 5
Torr. The beam flux for Ar+
ion was ×2.8 1015
ions cm−2
s−1
and the
energy was varied from 500 to 1200 eV. Keeping the angle of incidence
fixed at ∘67 with the sample surface normal, the fluence was varied from
× − ×2.5 10 1 1018 19 ions cm−2
corresponding to 15–60 min of irra-
diation. All the experiments were carried out at room temperature and
all samples were bombarded without rotation. Table 1 gives a summary
of the samples deposited and the bombardment experiments done
under different parameters. The samples have been named accordingly
for reference in the subsequent text. Ex-situ AFM (MultiMode 8, Bruker,
USA) characterization of the irradiated samples was performed in tap-
ping mode using a silicon tip having an approximate radius of 10 nm.
Data analyses of the acquired AFM images were performed using Na-
noScope Analysis software (v1.40).
3. Results
Fig. 2 shows AFM images of post-irradiated samples bombarded at
different ion energies between 500 eV and 1200 eV for the set of sam-
ples SE with a common Co content of 27%. The arrow in the picture
indicates the ion beam direction. Fig. 2(a) refers to the sample irra-
diated at 500 eV. Self-organized nanoscale ripples are observed for this
energy. With increase in the ion energy (700 eV), the ripple structures
gradually lose their distinctive character and defects start arising along
the ripple lengths. In contrast, with further increase of ion energy (1000
and 1200 eV), a distinctive change from nanoripple structures to el-
lipsoidal ones are clearly observed from the images. Thus a clear
morphology shift is observed in the present case. It must be noted here
that the images for 500 and 700 eV are on ×μm μm1 1 scale while those
for 1000 and 1200 eV are on a scale. Hence, the structures for the latter
two energies have large sizes as compared to the former ones. For all
the above cases, the structures are aligned perpendicular to the ion
beam direction i.e. the wave vector lies along the direction of the ion
beam.
Ion fluence variation studies were done on the set of samples SFs
with 16% Co composition keeping the energy at 700 eV and angle at
∘67 . Fig. 3 shows AFM images of these irradiated samples. Self-orga-
nized nanoscale ripples with defects are observed for these sets of
samples. Similar kind of ripples are observed on samples for fluences of
×2.5 1018 ions cm−2
and ×5 1018 ions cm−2
. Gradual change in mor-
phology was observed for a fluence of ×7.5 1018 ions cm−2
. Finally, for
a fluence of ×1 1019 ions cm−2
the ripples exhibit a better ordering. It is
evident from the images that the defect densities of the ripples for these
samples are much higher than the former ones (Fig. 2). However,
within the range of ion fluences studied, the defect density is seen to be
the lowest for the highest ion fluence.
For different stoichiometric set of samples (SE2, SF3, SA1) which
were irradiated with identical ion beam parameters (700 eV, ∘67 ,
×7.5 1018 ions cm−2
), AFM images are shown in Fig. 4. It is observed
that with increasing initial Co content the ordering of ripple patterns
change. For almost equal or high Co and Si contents rippled bug-like
hierarchical structures appear on the surface. The hierarchical nature is
evident from the line profile of one such bug-like structure.
Fig. 1. (a) SEM image of the sample irradiated at an energy of 1200 eV, incident
angle 67∘
and ion fluence ×7.5 1018 ions cm−2
. The arrow refers to the remnant
part of binary mixture thin film after erosion.
Table 1
Summary of the deposited samples along with their corresponding sputter
parameters.
Cobalt % Parameter Parameter
value
Other
parameters
Sample
name
27 Energy (eV) 500 eV Fluence = ×7.5 1018
ions cm−2
Angle = ∘67
SE-1
700 eV SE-2
1000 ev SE-3
1200 eV SE-4
16 Fluence (ions cm−2
) ×2.5 1018 Angle = ∘67
Energy = 700 eV
SF-1
×5.0 1018 SF-2
×7.5 1018 SF-3
×1.0 1019 SF-4
53 Angle (degree) 67∘
Energy = 700 eV
Fluence = ×7.5 1018 ions
cm−2
SA-1
B.K. Parida et al. Current Applied Physics 18 (2018) 993–1000
994
3. 4. Discussions
The deposited films were first analysed using x-ray diffraction to
check for possible silicide formation. No such evidence was found from
the data. Findings from the XRD results have been discussed towards
the end. The rms roughness of the as-deposited samples were ∼ 5 nm.
AFM results show that the roughness of the irradiated surfaces is less
than the as-grown one thereby implying smoothening during irradia-
tion. It was observed from Fig. 2 that there is a clear morphological
change of the irradiated surfaces from 500 eV to 1200 eV at an angle of
incidence ∘67 and ion fluence of ×7.5 1018 ions cm−2
. Ripple char-
acteristics obtained for the different energies are plotted in Fig. 5.
The ripple structures for 500 eV are self-organized with approxi-
mately −25 30 defects per μm2 (Fig. 2 (a) shows three defects as re-
presentative cases). The average wavelength and amplitude of these
ripples are found to be 41 nm and 1.7 nm respectively. The average
length of the ripples is about 344 nm. The average wavelength of the
ripples for the 700 eV case is about 47 nm. When compared with the
previous image for 500 eV, the ripple structure for this case gradually
starts disappearing as evident from the AFM images (Fig. 2) thereby
resulting in a lower roughness (Fig. 5). In addition, several defects arise
in the ripple morphology for this case. Above this energy, the roughness
again starts increasing with ion energy. Thus the morphology under-
goes a smoothening process up to 700 eV and roughens thereafter. A
similar trend is noticed for the ripple amplitudes which increases after
an initial decreasing trend up to 700 eV. At 1000 eV, the ripples com-
pletely disappear giving rise to ellipsoidal mound-like structures
aligned in the direction perpendicular to the ion beam. The sizes of
these structures are order of magnitude larger than the ripple structures
which are clearly evident from the AFM scan sizes. Similar structures
are also observed for the 1200 eV case as well. The ellipsoidal mounds
are regularly arranged with number densities of approximately 0.6 and
0.5 −μm 2 for 1000 and 1200 eV respectively. These structures become
more elongated and possess a higher amplitude when the energy of the
ion beam increases to 1200 eV (Fig. 5). Also comparing Fig. 2(c) and
(d), it is clear that these ellipsoidal structures are larger than the pre-
vious ones and the inter-ellipsoidal distance increases with energy. Fi-
nally, the aspect ratio (width/length) of the nanostructures is noticed to
decrease almost linearly with energy up to 1000 eV after which the
decrease rate slows down to a considerable extent. It is important to
note in this context that majority of the studies done at bombarding
energies around 1 keV or less on binary materials have been performed
on III-V semiconductors for fluences less than 1018 ions cm−2
[34–38].
In all of the above, nanodot formation was observed on the surfaces.
Fig. 2. AFM images of bombarded samples with Ar ion energies of (a) 500, (b) 700, (c) 1000 and (d) 1200 eV. White arrow indicates the ion beam direction. The z
value indicates the maximum height for each image. Representative defects are pointed out in (a) by white circles. Inset of (c): Schematic side view of an ellipsoidal
mound like structure, where the lower part is Si wafer containing the white colored patterned thin film.
B.K. Parida et al. Current Applied Physics 18 (2018) 993–1000
995
4. Again, experiments performed at lower fluences as compared to the
present case, on oxide surfaces have yielded hexagonally arranged na-
nodots and ripples [39–43]. In comparison, studies on impurity sput-
tering show ripple formation at energies comparable to the present case
for fluences below 1018 ions cm−2
[28,44,45]. A recent study by Gago
et al. showed both ripple and dot formation at higher fluences when Fe
and Mo impurities are added to Si surfaces during Ar ion bombardment
[46]. Majority of the experiments have thus been performed at fluences
less than ∼ 1018 ions cm−2
. To the best of our knowledge, ripple for-
mation at sub-keV energies and at fluences higher than ∼1018
ions
cm−2
for bulk metal-semiconductor binary systems have not been re-
ported till date.
The power spectral density (PSD) curves for the above cases are
plotted in Fig. 6. The prominent peak for the 500 eV case corresponds to
a wavelength of 41.6 nm which tallies well with our calculated value.
The additional peak refers to high lateral ordering of the ripple struc-
tures [5,47]. The PSD for the 700 eV case shows a broader peak shifted
slightly towards lower spatial frequency or higher ripple wavelength.
The broadness signifies loss of ripple regularity when compared with
those for the 500 eV case. The inter-ellipsoidal distance as obtained
from the PSDs are about ∼540 nm and ∼ 1 μm for 1000 eV and
1200 eV respectively. The variation of wavelength of nanostructures for
binary systems formed during ion bombardment has been studied by
few groups [18,34]. According to their results, the characteristic wa-
velengths of the ripples increase with ion energy which is in contra-
diction to the linear instability mechanism where thermal diffusion is
the primary relaxation process. According to this mechanism, the wa-
velength decreases with energy following a power law ∼λ Ep
, where p
is negative [6]. Several other studies have also pointed out that p could
also be positive thereby indicating a different relaxation mechanism
during the bombardment process [6] which corroborated very well
with the findings of Facsko et al. [18,34]. Under such a scenario, ion
induced surface diffusion (IISD) process dominates and the wavelength
of the structures are found to increase with energy. IISD corresponds to
the diffusion due to the direct transfer of momentum and energy from
ion to individual atoms of the binary mixture in ion-atom collisions,
which depends upon difference between the activation energy of sur-
face diffusion and ion-to atom energy transfer [48]. The increase in
wavelength with energy was taken care of by the fact that lateral
straggling of the incoming ions depends upon the energy deposited as a
power law ∼λ E m2 , where m is positive (∼ 0.25) and is dependent on
the interatomic potential within the low energy limits [34]. Thus, the
Fig. 3. AFM images of irradiated samples under varying ion fluence but identical beam energy of 700 eV and angle of incidence 67∘
. Arrows indicate the ion beam
direction. The z values indicate the maximum height for each image.
B.K. Parida et al. Current Applied Physics 18 (2018) 993–1000
996
5. surface diffusion comprises of contributions from thermally activated
diffusion (TD) and IISD [48]. The thermal diffusion term dominates at
higher temperatures while the effective ion induced diffusion term
dominates at higher energies. p can also be positive under beam scan-
ning over the sample wherein ion-induced effects eventually dominate
over thermal effects [49]. In the present case, the variation in
wavelength with the ion energy cannot be mapped or compared ac-
cording to this power law since the surface structures altogether suffer a
change in their shape within the energy range studied.
The wavelength and roughness variations of the ripple structures
with respect to ion fluence variation are shown in Fig. 7 for the set of
samples SFs. The wavelength is seen to increase monotonically with the
Fig. 4. (a)–(c) AFM images of samples having varied Co content irradiated under identical ion beam parameters (700eV, ×7.5 1018 ions cm−2
, ∘67 ), The Co/Si content
is indicated at the top left corner of each image. (Inset of (a) shows an enlarged area). (d) Typical line profile of a bug-like structure as observed in (c). (e) Roughness
variation as a function of Co/Si composition ratio. White arrow indicates the ion beam direction w.r.t. the surface. Schematic of bug like structure is shown beside fig
(e).
B.K. Parida et al. Current Applied Physics 18 (2018) 993–1000
997
6. ion fluence until the range studied following a power law given by d0.123
where d is the fluence. The average wavelength of the ripples is about
42 nm for a fluence of ×2.5 1018 ions cm−2
. Interestingly, this pertains
to the surface where the defects are more but the overall roughness is
smaller than the other cases as observed from Fig. 3. The roughness of
the films increases exponentially in the ion fluence range studied as
evident from the graph (Fig. 7). Bobek et al. had found that the
roughness increases quite abruptly and saturates thereafter for the case
of GaSb binary system [36]. Compared to their low fluence regime, the
present case pertains to a scenario of higher fluence where a consistent
exponential increase of the roughness is observed within the conditions
investigated. In general, the ripples are found to coarsen with time as
evident from Figs. 3 and 7. Nanostructure coarsening has been ad-
dressed by several groups in the literature for elemental as well as
binary compounds [13,18]. For binary systems, the individual sput-
tering rates, diffusivities, and surface viscous flow can together play a
significant role in the coarsening phenomenon. However, such
considerations have not been considered in any of the experimental
studies on such systems [18,36]. In both of the above cases, experi-
ments were performed under normal incidence and nanostructure or-
dering was found to improve with ion fluence. In the present one,
bombardment was carried out under oblique incidence. Still we observe
a progressively better ordering of the ripple structures within the ion
fluence range under consideration. We have also performed the ex-
periment at varying fluence for samples having 27% Co. Ripples are not
found to be well-formed at lower fluences as compared to higher ones
as evident from Fig. 7 (c).
Experiments done with varying Co content reveal that the roughness
increases linearly with the Co concentration in the sputtered binary
mixture samples (Fig. 4). Ripple structures are noticed to exist for Co
concentrations of 16% and 27% but with an increasing roughness. For
an increased Co concentration of 53%, the simple ripple structure is
seen to be replaced with rippled bug-like structures having higher
amplitudes as compared to the earlier ones. The bug-like hierarchical
structures are seen to be oriented along the ion beam direction. They
seem to arise in groups due to a pile up of a few ripple structures along
the beam direction.
We observe that with increase in Co concentration sputtering yield
becomes comparable for both the constituents as evident from Table 2.
Under this condition, the extent of phase separation tends to be less
than that for low concentrations of Co.
Macko et al. [25] had reported growth of similar structures resulting
out of shadowing and silicide formation but with co-deposition of Fe
under Kr+
bombardment. On the other hand, Zhang et al. [26] ob-
served evolution of ripples and dots for Fe surfactant atoms with 5 keV
Xe ion at normal incidence over silicon substrate. The formation of
these structures depends upon the Fe concentration on the surface. For
a higher iron composition, dots and ripple patterns are observed and
surfaces remain flat for lower composition. The above studies suggested
that silicide formation appeared to be a necessary but not a sufficient
condition for pattern formation. However, a recent study by Moon et al.
[30] has suggested that instability can set in for different stoichiome-
tries even if silicide formation is absent. Fig. 8 compares the XRD
profiles for different energies, fluences and compositions with that of
the pristine film. Silicide phases appear for different energies and
Fig. 5. Plots showing variations of (a) wavelength, (b) roughness, (c) amplitude and (d) aspect ratio of the surface patterns as a function of energy of the ion beam.
For amplitude and wavelength, the line profile is shown as inset in (c). The as-grown sample roughness is indicated in (b).
Fig. 6. Power spectral densities of the surface heights for samples irradiated at
different energies.
B.K. Parida et al. Current Applied Physics 18 (2018) 993–1000
998
7. fluences of irradiation that takes over the place of the pristine film.
Silicide formation seems to dominate for films having higher Co com-
position. It has been reported that silicides form at elevated tempera-
tures on clean Si surfaces with no native oxide [50]. For the present
case, the sample temperature is expected to rise with increase in ion
energy and fluence. The native oxide layer would be eroded upon ion
irradiation thereby leading to the formation of silicides. This is corro-
borated from the XRD data.
Finally, Fig. 9 summarizes the fate of the nanostructures formed via
Ar+
bombardment on various CoSi binary systems. The different kinds
of structures formed are shown as a function of ion energy in the dia-
gram. This suggests, focussing future research on systematic studies
covering the entire parameter space in such binary mixture systems
which would unravel promising routes to nanotechnology.
5. Conclusion
In conclusion, we have studied the morphology evolution of dif-
ferent stoichiometric CoxSi1−x ( < <x0 1) binary mixture thin films
under low energy (500–1200 eV) ion irradiation at oblique incidence.
The stoichiometric ratios of the samples investigated were far from the
theoretically assumed maximum coupling regime (i.e., 50:50) of topo-
graphy and stoichiometric instabilities. We have reported ripple for-
mation at sub-keV energies and at fluences higher than ∼ 1018 ions
cm−2
for such bulk metal-semiconductor binary systems which have
not been reported till date. There is a clear morphological change of the
irradiated binary surfaces when the incident energy varies from 500 eV
to 1200 eV. The surface undergoes a smoothening process up to 700 eV
and roughens thereafter. Complete disappearance of well-ordered na-
noscale ripples and appearance of large scale semi-ellipsoidal mound
like structures occur at 1000 eV which are aligned perpendicular to the
direction of ion beam. Inter structural distances also increase with
bombarding energy. The aspect ratio (width/length) of the nanos-
tructures decreases linearly up to 1000 eV after which the rate slows
down to a considerable extent. From the fluence study, it is found that
the wavelength of the nanostructures increases with fluence (d) fol-
lowing a power law d0.123, whereas the roughness increase is ex-
ponential. Substantial morphological changes are also observed as one
goes to higher Co content when the ripple structures are replaced by
hierarchical bug-like structures.
Acknowledgement
The work has been supported by Department of Science and
Technology, India by the proposal grant no. SR/S2/CMP-112/2012.
The authors also acknowledge the experimental assistance of Mr. H.
Singh, Mr. A. Kaushal, and Mr. A. K. Kar of IIT Ropar and Mr A. Sharma
of FCIPT/IPR, Gandhinagar.
Fig. 7. Plots showing variations of (a) wavelength and (b) roughness of surface structures for different fluences (Energy = 700 eV, Incident angle = 67∘
) (c) AFM
image of Ar ion irradiated Co27Si73 sample at an incident angle of 67∘
and fluence of ×2.5 1018 ions cm−2
.
Table 2
Sputtering yields of Co and Si for films of different stoichiometries obtained
from TRIM for 700eV Ar at 67∘
incidence.
Co content (%) 16 27 53
YCo 0.51 0.87 1.78
YSi 2.61 2.31 1.48
B.K. Parida et al. Current Applied Physics 18 (2018) 993–1000
999
8. References
[1] R. Gago, L. Vázquez, O. Plantevin, T.H. Metzger, J.M. García, R. Cuerno, M. Castro,
Appl. Phys. Lett. 89 (2006) 233101.
[2] P. Kumar, P. Jain, I. Sulania, Surf. Interface Anal. 48 (2016) 196–201.
[3] T. Kumar, A. Kumar, N. Lalla, S. Hooda, S. Ojha, S. Verma, D. Kanjilal, Appl. Surf.
Sci. 283 (2013) 417–421.
[4] S.P. Patel, D. Kanjilal, L. Kumar, Surf. Coat. Technol. 206 (2011) 487–491.
[5] B. Ziberi, M. Cornejo, F. Frost, B. Rauschenbach, J. Phys. Condens. Matter 21 (2009)
224003.
[6] W.L. Chan, E. Chason, J. Appl. Phys. 101 (2007) 121301.
[7] S. Habenicht, W. Bolse, K.P. Lieb, K. Reimann, U. Geyer, Phys. Rev. B 60 (4) (1999)
R2200–R2203.
[8] D. Babonneau, E. Vandenhecke, S. Camelio, Phys. Rev. B 95 (8) (2017) 085412.
[9] V. Mussi, F. Granone, C. Boragno, F.B. de Mongeot, U. Valbusa, T. Marolo,
R.M. Montereali, Appl. Phys. Lett. 88 (2006) 103116.
[10] J. Fassbender, T. Strache, M.O. Liedke, D. Mark, S. Wintz, K. Lenz, A. Keller,
S. Facsko, I. Mnch, J. McCord, N. J. Phys. 11 (2009) 125002.
[11] M. Ranjan, T.W.H. Oates, S. Facsko, W. Möller, Opt. Lett. 35 (2010) 2576–2578.
[12] J.M. Garcia, L. Vaźquez, M. Casrto, R. Gago, A.R. Cubero, A.M. Barrado, R. Cuerno,
Mater. Sci. Eng. R 86 (2014) 1–44.
[13] R. Gago, L. Vázquez, R. Cuerno, M. Varela, C. Ballesteros, J.M. Albella, Appl. Phys.
Lett. 78 (2001) 3316–3318.
[14] M. Castro, R. Gago, L. Vázquez, J. Muñoz García, R. Cuerno, Phys. Rev. B 86 (21)
(2012) 214107.
[15] A. Moreno-Barrado, R. Gago, A. Redondo-Cubero, L. Vázquez, J.M. García,
R. Cuerno, K. Lorenz, M. Castro, Europhys. Lett. 109 (2015) 48003.
[16] T. Basu, T. Som, Appl. Surf. Sci. 310 (2014) 142–146.
[17] A. Karen, Y. Nakagawa, M. Hatada, K. Okuno, F. Soeda, A. Ishitani, Surf. Interface
Anal. 23 (1995) 506–513.
[18] S. Facsko, T. Dekorsky, C. Koerdt, C. Trappe, H. Kurz, A. Vogt, H.L. Hartnagel,
Science 285 (1999) 1551.
[19] F. Frost, A. Schindler, F. Bigl, Phys. Rev. Lett. 85 (19) (2000) 4116–4119.
[20] S. Tan, R. Liu, C. Sow, A. Wee, Nucl. Instrum. Meth. Phys. Res. B 248 (2006) 83–89.
[21] O. El-Atwani, J.P. Allain, A. Cimaroli, A. Suslova, S. Ortoleva, J. Appl. Phys. 110
(2011) 074301.
[22] T. Kumar, S. Khan, U. Singh, S. Verma, D. Kanjilal, Appl. Surf. Sci. 258 (2012)
4148–4151.
[23] J.R. Mohanty, T. Basu, D. Kanjilal, T. Som, Appl. Surf. Sci. 258 (2012) 4139–4143.
[24] H. Hofsass, K. Zhang, Appl. Phys. A 92 (2008) 517–524.
[25] S. Macko, F. Frost, M. Engler, D. Hirsch, T. Hche, J. Grenzer, T. Michely, N. J. Phys.
13 (2011) 073017.
[26] K. Zhang, M. Brtzmann, H. Hofsss, N. J. Phys. 13 (2011) 013033.
[27] J. Zhou, S. Facsko, M. Lu, W. Möller, J. Appl. Phys. 109 (2011) 104315(pages 6).
[28] G. Ozaydin, A.S. zcan, Y. Wang, K.F. Ludwig, H. Zhou, R.L. Headrick, D.P. Siddons,
Appl. Phys. Lett. 87 (2005) 163104.
[29] M. Engler, F. Frost, S. Muller, S. Macko, M. Will, R. Feder, D. Spemann, R. Hubner,
S. Facsko, T. Michely, Nanotechnology 25 (2014) 115303.
[30] B. Moon, S. Yoo, J.S. Kim, S.J. Kang, J. Muñoz García, R. Cuerno, Phys. Rev. B 93
(11) (2016) 115430.
[31] S.A. Norris, J. Appl. Phys. 114 (2013) 204303.
[32] V.B. Shenoy, W.L. Chan, E. Chason, Phys. Rev. Lett. 98 (2007) 256101.
[33] P.D. Shipman, R.M. Bradley, Phys. Rev. B 84 (8) (2011) 085420.
[34] S. Facsko, H. Kurz, T. Dekorsy, Phys. Rev. B 63 (2001) 165329.
[35] S. Facsko, T. Bobek, A. Stahl, H. Kurz, T. Dekorsy, Phys. Rev. B 69 (2004) 153412.
[36] T. Bobek, S. Facsko, H. Kurz, T. Dekorsy, M. Xu, C. Teichert, Phys. Rev. B 68 (2003)
085324.
[37] N. Benito, C. Palacio, Appl. Surf. Sci. 351 (2015) 753–759.
[38] A. Keller, A. Biermanns, G. Carbone, J. Grenzer, S. Facsko, O. Plantevin, R. Gago,
T.H. Metzger, Appl. Phys. Lett. 94 (2009) 193103.
[39] H. Zhou, Y. Wang, L. Zhou, R.L. Headrick, A.S. Özcan, Y. Wang, G. Özaydin,
K.F. Ludwig, D.P. Siddons, Phys. Rev. B 75 (15) (2007) 155416.
[40] H. Zhou, L. Zhou, G. Özaydin, K.F. Ludwig, R.L. Headrick, Phys. Rev. B 78 (16)
(2008) 165404.
[41] T.M. Mayer, E. Chason, A.J. Howard, J. Appl. Phys. 76 (1994) 1633–1643.
[42] T. Luttrell, M. Batzill, Phys. Rev. B 82 (3) (2010) 035408.
[43] T. Luttrell, W.K. Li, X.Q. Gong, M. Batzill, Phys. Rev. Lett. 102 (16) (2009) 166103.
[44] O. El-Atwani, A. Suslova, A. DeMasi, S. Gonderman, J. Fowler, M. El-Atwani,
K. Ludwig, J.P. Allain, Appl. Phys. Lett. 101 (2012) 263104.
[45] O. El-Atwani, S. Gonderman, A. DeMasi, A. Suslova, J. Fowler, M. El-Atwani,
K. Ludwig, J.P. Allain, J. Appl. Phys. 113 (2013) 124305.
[46] R. Gago, A. Redondo-Cubero, F.J. Palomares, L. Vzquez, Nanotechnol 25 (2014)
415301.
[47] B. Ziberi, F. Frost, T. Höche, B. Rauschenbach, Phys. Rev. B 72 (23) (2005) 235310.
[48] M.A. Makeev, A.L. Barabasi, Appl. Phys. Lett. 71 (1997) 2800.
[49] T.K. Chini, M.K. Sanyal, S.R. Bhattacharyya, Phys. Rev. B 66 (15) (2002) 153404.
[50] J. Shi, T. Irie, F. Takahashi, M. Hashimoto, Thin Solid Films 375 (2000) 37.
Fig. 8. Comparision of XRD profiles for different fluences, energies, and com-
position with pristine film. The description of the samples is as given in Table 1.
Fluences of ×1.0 1019, ×7.5 1018, ×5.0 1018 and ×2.5 1018 shown in the middle
panel are in units of ions cm−2
for 60, 45, 30 and 15 min of ion irradiation
respectively.
Fig. 9. Phase diagram for pattern formation in the case of CoSi systems at
different energies.
B.K. Parida et al. Current Applied Physics 18 (2018) 993–1000
1000