1) The document summarizes research on using low-energy ion beams to induce morphological transitions in binary mixtures.
2) Experiments were conducted on CoxSi1-x mixtures using argon ion irradiation. Different energies, fluences, compositions, and angles of incidence resulted in transitions between nano- to microscale patterns including dots, ripples, and hierarchical structures.
3) Compositional variations were also observed, with cobalt enrichment occurring at pattern peaks. This showed that ion irradiation can induce stoichiometric rearrangements in the bulk of binary materials.
1) Ion beam irradiation was used to nanopattern a Co-Si binary mixture, producing nanoripples that transitioned to mounds at higher fluence. Swinging the substrate during irradiation led to the formation of cauliflower-like structures.
2) Current-voltage measurements on the patterns showed diode-like behavior. Resistance increased with pattern ordering and decreased with larger macro roughness at higher fluence.
3) Swinging speed was found to have an optimum value that roughened the surface more than no swinging or very slow/fast swinging, due to anisotropic mass transport induced by the swinging motion.
This document summarizes research on using ion beam sputtering to pattern the surfaces of binary compound materials. It presents equations to model the topographic and compositional changes that occur due to differential sputtering yields and diffusion rates between the two materials. The research uses a cobalt-silicon system as a test case and studies how the surface morphology transitions as the ion beam energy is varied from 500eV to 1200eV. Ordered ripples or dots can be produced by choosing the appropriate ion species, energy, and angle of incidence.
Low energy ion beam nanopatterning of CoxSi1-x Surfaces -Thesis Defense seminarDr. Basanta Kumar Parida
The document summarizes a defense seminar presentation on low energy ion beam nanopatterning of CoxSi1-x surfaces. It discusses various topics related to ion beam nanopatterning including experimental aspects, the effect of ion energy and fluence on morphology, the influence of ion species and incidence angle, and theoretical modeling. It provides details on the deposition of CoxSi1-x films, the ion irradiation experimental setup using different ion sources, and characterization techniques. Morphological transitions from ripples to dots are observed with increasing ion energy or decreasing fluence. Ion species and incidence angle are also found to influence pattern morphology.
Perovskites-based Solar Cells: The challenge of material choice for p-i-n per...Akinola Oyedele
Perovskite-based PV have triggered widespread interest in the scientific community because these materials offer the attractive combinations of low cost and theoretically high efficiency. However, several challenges must be overcome for these relatively new PV materials. Among the many important challenges, one is the choice of materials to be used in thin film PV devices..
Based on fundamental principles of solar photovoltaics, this problem focuses on two aspects of the perovskite system:
1) Based on a planar p-i-n device structure, a potential list of p- and n-type charge collecting layers as well as the conductive contacts that could be used with a promising perovskite absorber material was identified, and a proper justification for the selection of each material in the device was given.
2) Three theoretical p-i-n type solar cells were made with the chosen materials and appropriate conductive contacts.
Ion implantation allows for precise introduction of dopants into semiconductors. It involves ionizing and accelerating ions before injecting them into the target wafer. This creates a dopant profile under the surface. The profile characteristics like peak concentration and depth depend on implantation energy and dose. Implantation causes lattice damage but annealing restores the crystal structure and activates dopants. Implantation offers advantages over diffusion like independent control of concentration and depth with low temperature processing.
1) Ion beam irradiation was used to nanopattern a Co-Si binary mixture, producing nanoripples that transitioned to mounds at higher fluence. Swinging the substrate during irradiation led to the formation of cauliflower-like structures.
2) Current-voltage measurements on the patterns showed diode-like behavior. Resistance increased with pattern ordering and decreased with larger macro roughness at higher fluence.
3) Swinging speed was found to have an optimum value that roughened the surface more than no swinging or very slow/fast swinging, due to anisotropic mass transport induced by the swinging motion.
This document summarizes research on using ion beam sputtering to pattern the surfaces of binary compound materials. It presents equations to model the topographic and compositional changes that occur due to differential sputtering yields and diffusion rates between the two materials. The research uses a cobalt-silicon system as a test case and studies how the surface morphology transitions as the ion beam energy is varied from 500eV to 1200eV. Ordered ripples or dots can be produced by choosing the appropriate ion species, energy, and angle of incidence.
Low energy ion beam nanopatterning of CoxSi1-x Surfaces -Thesis Defense seminarDr. Basanta Kumar Parida
The document summarizes a defense seminar presentation on low energy ion beam nanopatterning of CoxSi1-x surfaces. It discusses various topics related to ion beam nanopatterning including experimental aspects, the effect of ion energy and fluence on morphology, the influence of ion species and incidence angle, and theoretical modeling. It provides details on the deposition of CoxSi1-x films, the ion irradiation experimental setup using different ion sources, and characterization techniques. Morphological transitions from ripples to dots are observed with increasing ion energy or decreasing fluence. Ion species and incidence angle are also found to influence pattern morphology.
Perovskites-based Solar Cells: The challenge of material choice for p-i-n per...Akinola Oyedele
Perovskite-based PV have triggered widespread interest in the scientific community because these materials offer the attractive combinations of low cost and theoretically high efficiency. However, several challenges must be overcome for these relatively new PV materials. Among the many important challenges, one is the choice of materials to be used in thin film PV devices..
Based on fundamental principles of solar photovoltaics, this problem focuses on two aspects of the perovskite system:
1) Based on a planar p-i-n device structure, a potential list of p- and n-type charge collecting layers as well as the conductive contacts that could be used with a promising perovskite absorber material was identified, and a proper justification for the selection of each material in the device was given.
2) Three theoretical p-i-n type solar cells were made with the chosen materials and appropriate conductive contacts.
Ion implantation allows for precise introduction of dopants into semiconductors. It involves ionizing and accelerating ions before injecting them into the target wafer. This creates a dopant profile under the surface. The profile characteristics like peak concentration and depth depend on implantation energy and dose. Implantation causes lattice damage but annealing restores the crystal structure and activates dopants. Implantation offers advantages over diffusion like independent control of concentration and depth with low temperature processing.
The document summarizes research on ion beam nanostructuring of CoxSi1-x binary surfaces and the role of stoichiometry and sample swinging. It discusses (1) how the initial stoichiometry affects pattern evolution, with ripples forming within a narrow stoichiometric window, (2) how substrate swinging introduces anisotropic surface modification and lateral mass transport, affecting morphology. Future work is proposed to better understand mobility effects, silicide formation roles, and potential magnetic and electrical applications of patterned binary surfaces.
Influence of obliquely incident primary ion species on patterning of CoSi bin...Dr. Basanta Kumar Parida
The document summarizes an experimental study on the influence of obliquely incident primary ion species on patterning of CoSi binary mixtures. Specifically, it investigates nanostructure formation during low energy ion erosion of CoxSi1-x mixtures with Ar+ and Xe+ ions at different angles of incidence. For Ar+ irradiation near normal incidence, smoothening is observed, while ripple formation occurs at higher angles, transforming to spherical humps at grazing incidence. In contrast, periodic structures are hardly observed for Xe+ irradiation across incidence angles studied. Surface roughness increases more notably for Xe+ than Ar+ ions with increasing incidence angle. The results demonstrate how low energy oblique incidence ions can generate varied nanostructures
Sputtering yield and nanopattern formation study of BNSiO2 (Borosil) at eleva...Dr. Basanta Kumar Parida
Lower sputtering yield of the discharge wall material is a crucial parameter for the performance of Hall Effect Thruster (HET) [1, 2]. In this article, we report the sputtering yield of HET wall
material BNSiO2 (borosil) at elevated temperature ~600 °C using quartz crystal microbalance (QCM). We observe a linear increase in the sputtering yield with temperature and it remains stable during long duration experiments using Xe ions. Two different crystallographic orientations of borosil give a
slight variation in the yield. The higher yields for higher operating temperatures is proposed to be due to the thermal spike nature. Microscopic surface morphology shows only different grains of BNSiO2, however high resolution nanoscopic view reveals the formation of nanoripple like structures over different grains [3]. The periodicity of such features increases with ion dose (sputtering time) and temperature in the range of 70-190 nm. Local curvature dependent erosion plays crucial role in such pattern formation [4].
Reference:
1. D.M. Goebel, I. Katz, Fundamentals of Electric Propulsion, Ion and Hall Thrusters, 2008.
2. M. Ranjan, A. Sharma, A. Vaid, T. Bhatt, V. Nandalan, M.G. James, H. Revathi, S. Mukherjee, AIP
Adv. 6 (2016) 95224
3. R. M. Bradley, J.M.E. Harper, J. Vac. Sci. Technol. A 6 (1988) 2390
4. B. K. Parida, Sooraj K P, S. Hans, V. Pachchigar, S. Augustine, Remyamol T, M. R. Ajith, M. Ranjan;
Nucl. Inst and Methods B, 514 (2022) 1-7
This document discusses two key materials issues in semiconductor quantum dots: 1) The local nano-chemistry of quantum dot molecules (QDMs), specifically that pit bases within QDMs have the highest germanium concentration at 58% germanium based on auger electron spectroscopy measurements. 2) The structural damage and recovery from focused ion beam (FIB) implantation in silicon, finding that FIB implantation causes more damage than broad beam implantation but allows for better recovery upon annealing.
Arquivo do seminário apresentado pelo professor Fernando Alvarez, pesquisador da seção Unicamp do Instituto Nacional de Engenharia de Superfícies, no dia 20 de agosto de 2013, na seção UCS do Instituto, para um público de 30 estudantes e professores de cursos de graduação e pós-graduação.
This document summarizes a seminar presentation about irradiation effects in high melting oxides and the synthesis of new luminescent composite materials. The presentation covered self-introduction of the speaker, introduction to the topic, purpose of the study which was to investigate irradiation effects in oxides like MgAl2O4 and α-Al2O3 as well as synthesize luminescent composites. Experimental methods used included irradiation of samples using neutrons and electrons followed by measurement techniques like photoluminescence spectroscopy. Results showed irradiation induced defects in oxides and conversion of Sm3+ to Sm2+ in Na2SO4 under irradiation. In conclusion, irradiation was found to modify optical and structural properties of materials.
Introduction to nanoparticles and bionanomaterialsShreyaBhatt23
what is a nanoparticle, why small is good,nanoscale effect, how to make nanostructures,top down and bottom up approachs,
methods of making nanomaterials,chemical methods od making nanomaterial,bionanomaterials,
This document summarizes a study on the morphological changes of cobalt-silicon (CoxSi1-x) binary mixtures under low energy argon ion bombardment. Cobalt-silicon thin films with varying stoichiometries were sputtered onto silicon substrates and bombarded with argon ions at energies between 500-1200 eV and fluences up to 1019 ions/cm2. Well-ordered nanoscale ripples formed at 500-700 eV, which transformed into larger ellipsoidal structures at higher energies. Ripple wavelength increased with fluence. Samples with higher cobalt content developed hierarchical "bug-like" structures. Increasing ion energy and cobalt content resulted in less ordered nanopatterns.
Introduction to nanoscience and nanotechnologyaimanmukhtar1
Introduction of nanoscience/nanotechnology ,properties/potential applications of nanomaterials and electrodeposition of metal single component and alloy nanowires in AAO template
Synthesis of ZnO Nanoparticles using wet chemical method and its characteriza...Govind Soni
This is very intersting power point on ZnO NPs synthesized by me GOVIND SONI and my lab partnes KAUSHAL ,SANEHA & DINESH under the guidance of our PhD scholar Mr.SAHIL & Ms.KIRTI in the CYRSTAL LAB of DR.BINAY KUMAR in Department of Physics & Astrophysics .This presentation basically covers the Introduction to Nanoscience and Nanotechnology and synthesis of Zinc oxide nanoparticles using wet chemical method . its characterization has been done in Msc finals Nanoscience lab using X-Ray Diffraction and Particle size Analyzer.This presentation also contains an advance topic on introduction to Spintronics which is basically the study of internsic spin of electronics and its magnetic moment.I hope it will be an important tool to know about Nanoworld .
Perovskite: introduction, classification, structure of perovskite, method to synthesis, characterization by XRD and UV- vis spectroscopy , lambert beer's law, material properties and advantage and application.
Synthesis, Growth and Characterization of Nonlinear Optical Semi Organic Pota...IRJET Journal
The document summarizes the synthesis, growth, and characterization of Potassium Sulphate Formate (PSF) single crystals grown by slow evaporation method. PSF crystals were grown by dissolving equimolar ratios of Potassium Sulphate and Formic acid in water. Single crystal XRD analysis confirmed the crystals belong to the orthorhombic system with space group Pna21. Powder XRD and FTIR analysis verified the crystallinity and functional groups. UV-Vis spectroscopy determined the optical transmission range and bandgap. Thermal analysis and SHG measurements showed the crystals have good thermal stability and higher SHG efficiency than KDP.
This document summarizes a study that synthesized nanoparticles of Y3+ substituted Ni1-x Cdx Yy Fe2-y O4 using a sol-gel autocombustion method. X-ray diffraction analysis revealed the nanoparticles had an average grain size between 12.5 to 34.8 nm and a spinel cubic structure. Ultraviolet visible spectroscopy and Fourier transform infrared spectroscopy were used to investigate the optical properties. The average band gap energy calculated using the Tauc method was 1.6294 eV, indicating the materials behaved as semiconductors. Increasing the Y3+ concentration slightly increased the lattice constant and slightly decreased the band gap energy.
Effect of Milling Time on Co0.5Zn0.5Fe2O4 Microstructure and Particles Size E...Abubakar Yakubu
This document summarizes a study on the effect of milling time on the microstructure and particle size evolution of Co0.5Zn0.5Fe2O4 powder produced via mechanical alloying. Nanocrystalline CoZn-ferrite powder was fabricated by ball milling a mixture of Fe2O3, CoO, and ZnO for varying times. X-ray diffraction analysis showed the formation of a single phase CoZn-ferrite structure after 8 hours of milling with crystallite sizes ranging from 16-30 nm. Scanning electron microscopy revealed particle sizes of 19.5-24 nm after 12 hours of milling. Transmission electron microscopy images confirmed the nanosized particles produced had diameters
This document provides information about swift heavy ion irradiation and its role in materials science. It discusses the 15UD Pelletron facility at Inter University Accelerator Centre in New Delhi, India, which can produce beams of various heavy ions up to 15MV. Energetic heavy ions can modify materials through electronic and nuclear energy loss. Defect formation, amorphization, and phase transformations can occur in materials due to swift heavy ion irradiation. The document focuses on using this technique to study and modify properties of nonlinear optical materials for applications in photonics and optoelectronics.
IRJET - Photoluminescence Study of Rare Earth Doped ZnO NanoparticlesIRJET Journal
This document reports on a study of photoluminescence properties of rare earth doped ZnO nanoparticles. ZnO nanoparticles were synthesized using a chemical method with thiourea as a capping agent. X-ray diffraction and scanning electron microscopy were used to characterize the structural and morphological properties. The particle sizes measured from XRD were 56nm for doped samples and 66nm for undoped. SEM images showed agglomerated nanoparticles without distinct structures. Absorption spectra showed band gaps of 4.32eV for undoped and 4.28eV for doped samples. Photoluminescence excitation and emission spectra of doped samples exhibited characteristic peaks of Eu3+ ions.
Ion implantation is a process that introduces impurity atoms into a crystalline substrate by accelerating ions to high energies and allowing them to impact the surface. A typical ion implanter consists of an ion source, mass analyzer, ion accelerator, neutral beam trap, beam scanners, wafer, and Faraday cup. Ion implanters offer advantages like accurate dose control and low-temperature doping but are highly sophisticated and costly. Recent innovations in implanter technology include advanced approaches for doping and defect engineering, improved single ion implantation using scanning probes, and single wafer mechanical scan implanters. Plasma immersion ion implantation is an alternative technique that uses a plasma to envelop and implant ions into a sample using high voltage pulses
Deposition of Metal and Transition Metal Nanostructures by Galvanic Displacem...Minh Tran
Metal and transition metal nanostructures are of great interest due to their applicability in various areas such as catalysis, sensing, and optoelectronics. Here we report the formation of palladium (Pd), platinum (Pt), nickel (Ni), and cobalt (Co) nanostructures by galvanic displacement technique. The synthesis method essentially consists of immersing a silicon (Si) substrate in hydrofluoric (HF) acid for 2 min., followed by immersing the substrate in metal or transition metal precursor solution for 5 min. These steps are repeated several times to obtain the desired density of the nanostructures. A series of experiments was performed to monitor the density and morphology of the synthesized nanostructures, and the results were correlated to the number of times the above steps were repeated. Thus, a good control over the nanostructure density was obtained. Further, we investigated the effect of chemical additives, like sodium dodecyl sulfate (SDS) and cetyltrimethylammonium bromide (CTAB), on the morphology and density of the nanostructures. The characterization of all the above nanostructures was performed by using scanning electron microscope (SEM), energy dispersive x-ray spectrometer (EDS), and ultraviolet-visible spectrometer (UV-Vis).
The document reports on the results of experiments measuring the roughness of surfaces bombarded with ions at different energies. The following key results are reported:
1) Bombarding a pristine surface with a roughness of 5.35 nm with ions at energies of 500 eV, 700 eV, 1000 eV and 1200 eV resulted in reduced surface roughnesses of 13 nm, 8 nm, 20 nm, and 24 nm respectively.
2) Exposure of samples to ion bombardment for times ranging from 15 to 60 minutes led to an increase in surface roughness over time.
3) Bombardment of samples with increasing ion fluence from 2.5x1018 cm-2 to 1.0x1019 cm-
This document discusses combining magnetron sputtering plasma and ion source plasma technologies. It shows views of a system that uses both a magnetron sputtering process and ion source, as well as a full view of the combined system and a view of the combined system connected to a power controller rack.
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The document summarizes research on ion beam nanostructuring of CoxSi1-x binary surfaces and the role of stoichiometry and sample swinging. It discusses (1) how the initial stoichiometry affects pattern evolution, with ripples forming within a narrow stoichiometric window, (2) how substrate swinging introduces anisotropic surface modification and lateral mass transport, affecting morphology. Future work is proposed to better understand mobility effects, silicide formation roles, and potential magnetic and electrical applications of patterned binary surfaces.
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The document summarizes an experimental study on the influence of obliquely incident primary ion species on patterning of CoSi binary mixtures. Specifically, it investigates nanostructure formation during low energy ion erosion of CoxSi1-x mixtures with Ar+ and Xe+ ions at different angles of incidence. For Ar+ irradiation near normal incidence, smoothening is observed, while ripple formation occurs at higher angles, transforming to spherical humps at grazing incidence. In contrast, periodic structures are hardly observed for Xe+ irradiation across incidence angles studied. Surface roughness increases more notably for Xe+ than Ar+ ions with increasing incidence angle. The results demonstrate how low energy oblique incidence ions can generate varied nanostructures
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Reference:
1. D.M. Goebel, I. Katz, Fundamentals of Electric Propulsion, Ion and Hall Thrusters, 2008.
2. M. Ranjan, A. Sharma, A. Vaid, T. Bhatt, V. Nandalan, M.G. James, H. Revathi, S. Mukherjee, AIP
Adv. 6 (2016) 95224
3. R. M. Bradley, J.M.E. Harper, J. Vac. Sci. Technol. A 6 (1988) 2390
4. B. K. Parida, Sooraj K P, S. Hans, V. Pachchigar, S. Augustine, Remyamol T, M. R. Ajith, M. Ranjan;
Nucl. Inst and Methods B, 514 (2022) 1-7
This document discusses two key materials issues in semiconductor quantum dots: 1) The local nano-chemistry of quantum dot molecules (QDMs), specifically that pit bases within QDMs have the highest germanium concentration at 58% germanium based on auger electron spectroscopy measurements. 2) The structural damage and recovery from focused ion beam (FIB) implantation in silicon, finding that FIB implantation causes more damage than broad beam implantation but allows for better recovery upon annealing.
Arquivo do seminário apresentado pelo professor Fernando Alvarez, pesquisador da seção Unicamp do Instituto Nacional de Engenharia de Superfícies, no dia 20 de agosto de 2013, na seção UCS do Instituto, para um público de 30 estudantes e professores de cursos de graduação e pós-graduação.
This document summarizes a seminar presentation about irradiation effects in high melting oxides and the synthesis of new luminescent composite materials. The presentation covered self-introduction of the speaker, introduction to the topic, purpose of the study which was to investigate irradiation effects in oxides like MgAl2O4 and α-Al2O3 as well as synthesize luminescent composites. Experimental methods used included irradiation of samples using neutrons and electrons followed by measurement techniques like photoluminescence spectroscopy. Results showed irradiation induced defects in oxides and conversion of Sm3+ to Sm2+ in Na2SO4 under irradiation. In conclusion, irradiation was found to modify optical and structural properties of materials.
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By understanding inductive bias, you can gain valuable insights into how machine learning models work and make informed decisions when building and deploying them.
Advanced control scheme of doubly fed induction generator for wind turbine us...IJECEIAES
This paper describes a speed control device for generating electrical energy on an electricity network based on the doubly fed induction generator (DFIG) used for wind power conversion systems. At first, a double-fed induction generator model was constructed. A control law is formulated to govern the flow of energy between the stator of a DFIG and the energy network using three types of controllers: proportional integral (PI), sliding mode controller (SMC) and second order sliding mode controller (SOSMC). Their different results in terms of power reference tracking, reaction to unexpected speed fluctuations, sensitivity to perturbations, and resilience against machine parameter alterations are compared. MATLAB/Simulink was used to conduct the simulations for the preceding study. Multiple simulations have shown very satisfying results, and the investigations demonstrate the efficacy and power-enhancing capabilities of the suggested control system.
Presentation of IEEE Slovenia CIS (Computational Intelligence Society) Chapte...University of Maribor
Slides from talk presenting:
Aleš Zamuda: Presentation of IEEE Slovenia CIS (Computational Intelligence Society) Chapter and Networking.
Presentation at IcETRAN 2024 session:
"Inter-Society Networking Panel GRSS/MTT-S/CIS
Panel Session: Promoting Connection and Cooperation"
IEEE Slovenia GRSS
IEEE Serbia and Montenegro MTT-S
IEEE Slovenia CIS
11TH INTERNATIONAL CONFERENCE ON ELECTRICAL, ELECTRONIC AND COMPUTING ENGINEERING
3-6 June 2024, Niš, Serbia
CHINA’S GEO-ECONOMIC OUTREACH IN CENTRAL ASIAN COUNTRIES AND FUTURE PROSPECTjpsjournal1
The rivalry between prominent international actors for dominance over Central Asia's hydrocarbon
reserves and the ancient silk trade route, along with China's diplomatic endeavours in the area, has been
referred to as the "New Great Game." This research centres on the power struggle, considering
geopolitical, geostrategic, and geoeconomic variables. Topics including trade, political hegemony, oil
politics, and conventional and nontraditional security are all explored and explained by the researcher.
Using Mackinder's Heartland, Spykman Rimland, and Hegemonic Stability theories, examines China's role
in Central Asia. This study adheres to the empirical epistemological method and has taken care of
objectivity. This study analyze primary and secondary research documents critically to elaborate role of
china’s geo economic outreach in central Asian countries and its future prospect. China is thriving in trade,
pipeline politics, and winning states, according to this study, thanks to important instruments like the
Shanghai Cooperation Organisation and the Belt and Road Economic Initiative. According to this study,
China is seeing significant success in commerce, pipeline politics, and gaining influence on other
governments. This success may be attributed to the effective utilisation of key tools such as the Shanghai
Cooperation Organisation and the Belt and Road Economic Initiative.
A SYSTEMATIC RISK ASSESSMENT APPROACH FOR SECURING THE SMART IRRIGATION SYSTEMSIJNSA Journal
The smart irrigation system represents an innovative approach to optimize water usage in agricultural and landscaping practices. The integration of cutting-edge technologies, including sensors, actuators, and data analysis, empowers this system to provide accurate monitoring and control of irrigation processes by leveraging real-time environmental conditions. The main objective of a smart irrigation system is to optimize water efficiency, minimize expenses, and foster the adoption of sustainable water management methods. This paper conducts a systematic risk assessment by exploring the key components/assets and their functionalities in the smart irrigation system. The crucial role of sensors in gathering data on soil moisture, weather patterns, and plant well-being is emphasized in this system. These sensors enable intelligent decision-making in irrigation scheduling and water distribution, leading to enhanced water efficiency and sustainable water management practices. Actuators enable automated control of irrigation devices, ensuring precise and targeted water delivery to plants. Additionally, the paper addresses the potential threat and vulnerabilities associated with smart irrigation systems. It discusses limitations of the system, such as power constraints and computational capabilities, and calculates the potential security risks. The paper suggests possible risk treatment methods for effective secure system operation. In conclusion, the paper emphasizes the significant benefits of implementing smart irrigation systems, including improved water conservation, increased crop yield, and reduced environmental impact. Additionally, based on the security analysis conducted, the paper recommends the implementation of countermeasures and security approaches to address vulnerabilities and ensure the integrity and reliability of the system. By incorporating these measures, smart irrigation technology can revolutionize water management practices in agriculture, promoting sustainability, resource efficiency, and safeguarding against potential security threats.
Embedded machine learning-based road conditions and driving behavior monitoringIJECEIAES
Car accident rates have increased in recent years, resulting in losses in human lives, properties, and other financial costs. An embedded machine learning-based system is developed to address this critical issue. The system can monitor road conditions, detect driving patterns, and identify aggressive driving behaviors. The system is based on neural networks trained on a comprehensive dataset of driving events, driving styles, and road conditions. The system effectively detects potential risks and helps mitigate the frequency and impact of accidents. The primary goal is to ensure the safety of drivers and vehicles. Collecting data involved gathering information on three key road events: normal street and normal drive, speed bumps, circular yellow speed bumps, and three aggressive driving actions: sudden start, sudden stop, and sudden entry. The gathered data is processed and analyzed using a machine learning system designed for limited power and memory devices. The developed system resulted in 91.9% accuracy, 93.6% precision, and 92% recall. The achieved inference time on an Arduino Nano 33 BLE Sense with a 32-bit CPU running at 64 MHz is 34 ms and requires 2.6 kB peak RAM and 139.9 kB program flash memory, making it suitable for resource-constrained embedded systems.
A review on techniques and modelling methodologies used for checking electrom...nooriasukmaningtyas
The proper function of the integrated circuit (IC) in an inhibiting electromagnetic environment has always been a serious concern throughout the decades of revolution in the world of electronics, from disjunct devices to today’s integrated circuit technology, where billions of transistors are combined on a single chip. The automotive industry and smart vehicles in particular, are confronting design issues such as being prone to electromagnetic interference (EMI). Electronic control devices calculate incorrect outputs because of EMI and sensors give misleading values which can prove fatal in case of automotives. In this paper, the authors have non exhaustively tried to review research work concerned with the investigation of EMI in ICs and prediction of this EMI using various modelling methodologies and measurement setups.
1. Transitional morphology in
binary mixtures via low
energy ion beams
By
Basanta Kumar Parida
Indian Institute of Technology Ropar, Punjab, India
4th International Conference on Nanostructuring by Ion Beam
ICNIB-2017 October 11-13, 2017 DAVV, Indore
2. Outline
• Introduction (Typical patterns formed)
• Theoretical background for ion beam nanopatterns
• Our region of interest
• Our results
• Summary
2
3. Ion induced patterns for elements and compounds
Nanoripples
Monoelemental
Nanodots
3
https://www.hzdr.de/db/Cms?pOid=24344&pNid=2707
Ar→GaSb
500 eV, 30 min, 0o
Ar→Si
500 eV, 30 min, 67o
Binary compound
Oblique Incidence Normal Incidence Oblique Incidence
with rotation
Ar→InP
500 eV, 2 min, 10o
Frost et.al. Phys. Rev. Lett(2000)
4. Theoretical background
• Competition between two processes
– Roughening due to sputtering
– Smoothening due to diffusion
4
𝝏𝒉
𝝏𝒕
= −𝒗𝟎 + 𝜸(𝜽)
𝝏𝒉
𝝏𝒙
+ 𝝂𝒙
𝝏𝟐
𝒉
𝝏𝒙𝟐
+ 𝝂𝒚
𝝏𝟐
𝒉
𝝏𝒚𝟐
− 𝑲𝜵𝟒
𝒉
Sputter
roughening
Diffusion
smoothing
Bradley-Harper Model
Monoelemental Binary compound
• Differential sputtering yield and
Differential diffusivity
– Results altered topography and
composition
A
B
Shenoy et.al., Phys. Rev. Lett., 98, 256101 (2007)
5. Binary alloy sputtering
• Normal incidence over a binary compound leads arrays of nanodots
• Coupling between topography and altered composition
• For AB alloy sputtering yield and composition
𝐹𝐴 = 𝐹𝑌
𝐴𝑐𝑠 , 𝐹𝐵 = 𝐹𝑌𝐵(1 − 𝑐𝑠)
• For steady state bulk composition
𝑭𝑨
𝑭𝑩
=
𝒄𝒃
𝟏−𝒄𝒃
𝒄𝒔=
𝒀𝑩𝒄𝒃
𝒀𝑨(𝟏 − 𝒄𝒃) + 𝒀𝑩𝒄𝒃
5
Shenoy et.al., Phys. Rev. Lett., 98, 256101 (2007) Shipman et.al., Phys. Rev. B, 84, 085420 (2011)
6. Ar+ GaSb(001)
Studies on binary materials (Low energy)
6
Plantevin et al. Appl. Phys. Lett.91, 113105 (2007) S.K. Tan et al. NIMB 248 ,83 (2006)
1 keV O2
+ InP(100)
Facsko et, al. Appl. Phys. Lett., 80,1 (2002)
Ar+ GaSb(100) Ar+ GaSb(111) Ar+ amorphous
GaSb
100 eV Ar+ GaSb
El-Atwani et al. J. Appl. Phys.110, 074301 (2011)
7. Studies on surfactant sputtering - impurity
addition
• Impurity addition has a deterministic role in pattern formation
• Co-deposition of small amounts of metallic atoms, e.g. Fe, Mo has tremendous
impact on pattern
7
Without Mo seeding With Mo seeding
Ar+(1 keV)Si
Ozadyn et. al. Appl. Phys. Lett.87, 163104 (2005) Hofsass et. Al. Appl Phys A 111:653(2013)
8. Our domain of study
• Mixtures containing initially well-mixed species (bulk composition)
• Metal-semiconductor system
• Widely different diffusivities - Deciding factor
• Far from strongest coupling (50-50) composition
• For impurity addition, surface or near-surface layer has a penetration
depth of sub-nanometer
• Sputtering can induce stoichiometric rearrangements in the bulk as
well, which affect the surface concentration
• Ion induced diffusivity is primarily confined to the surface
8
CoxSi1-x is chosen as the binary material
9. Experimental details
• CoxSi1-x is chosen as binary material
• Deposited over Si(100) with variable stoichiometries
• Irradiated with different energies, fluence, stoichiometry and angles
• Initial roughness – 5 nm
9
Si(100)
CoxSi1-x
After Ar ion irradiation
at 1200 eV
Unirradiated CoxSi1-x
12. Compositional variations and MFM study
12
Compositional variation Topographical changes
Enrichment of cobalt at the peaks
Hierarchical(bug-like) structures
14. Summary
• Morphological transition at higher energies – nano to micro
• Power law behavior for fluence variations
• Heirarchical structures for higher Co concentrations
• Enrichment of cobalt at crests
• Formation of conical structures at higher angles. Lower angles give
extremely smooth surfaces
14
Acknowledgement
Supervisor - Dr. Subhendu Sarkar
Dr. Mukesh Ranjan, FCIPT, IPR
CRF, IIT Ropar
MHRD, India
16. Nanopatterning using ion beam
16
Advantages
• Single step Faster and cheaper process for large area patterning
• Nanoripples, dots, holes etc.
• Easy to tune the parameters(ion energy, angle, flux,)
Applications
• Quantum dots in optoeletronic devices
• Nanoripples for optical interference grating, plasmonic applications
• Templates for functionalized surfaces
S. Facsko et.al., Science, 285, 1551
(1999)
CoSi
500 eV, 67o,45 min
GaSb
500 eV, 0o,400Sec
Ar ion flux IPR
Our Work
18. Angle variation Xe ion on CoxSi1-x
18
Xe+ Co64Si36
θ=30o
z=11 nm
θ=0o
z=16 nm
θ=50o
z=28 nm
θ=67o
z=31 nm
Irregular dot structures to triangular structures
10
-3
10
-2
10
-2
10
-1
10
0
10
1
10
2
10
3
PSD(nm
4
)
Frequency(nm
-1
)
0 deg
30 deg
50 deg
67 deg
-10 0 10 20 30 40 50 60 70
1.0
1.5
2.0
2.5
3.0
3.5
Roughness
(nm)
Angle of incidence (degree)
ion = Xe+
time = 45 min
energy = 500 eV
19. I-V characteristic study
19
-20 -10 0 10 20
-0.08
-0.06
-0.04
-0.02
0.00
0.02
0.04
0.06
0.08
ion beam direction XX'
pristine
60 min
45 min
30 min
15 min
I
(amp)
V (volt)
pristine
10 min
15 min
30 min
45 min
60 min
10 min
X
Y
Editor's Notes
Typical patterns formed as I have explained earlier are nanoripples and dots.
For monoelemental surfaces like Si, Ge and metals etc, IBS at oblique incidence create nanoripples, where as for binary compound cases like III-V semiconductors (GaSb, GaAs, InP etc) there is the formation of hexagonally ordered nanodots which are mostly crystalline nature for few minutes of sputtering. As referred in the fig. The two cases are normal incidence or oblique incidence ion beam with rotating substrate can create these nanodots.
(1)Ar→Si 500 eV, 67o (2)Ar→GaSb 500 eV, 67o both for 30 min (3)Ar→InP 500 eV, 2 min, 10o
Representative patterns for different cases
As energetic ion enters into the substance there forms a disturbed region inside the substance called Collison cascade. Few atoms get sufficient energy to come out of the surface due to these which can be explained by an instability theory of Bradley and Harper. The irregularities over the surface(like crests or trough) lead to instability due to which trough erodes faster than the crest. Hence the instability creates roughening of the surface which competes with the thermal surface diffusion where matters flow to the crests to the tough leads to the smoothening. Hence Formation of nanopattern are due to the competition between two processes. One is the roughening due to the surface curvature and other smoothening due to thermal diffusion. Both effect combinly result nanoripples.
Our group basically works on binary compound which is….
Height modulations lead to gradient in composition by colour composition
Flux of surface eroded atoms due to ion beam
Bulk composition surface composition phenomena
Will you write the last line?
These are AFM images for the Ar ion irradiated Co27Si73 surfaces with different energies. There is morphology change has been observed from 500 -1200 eV energy. Nanoscale ripples for 500 eV case.
Peculiar semi-ellipsoidal structures have been observed for 1000 and 1200 eV cases. Variations like roughness, wavelength, amplitudes, aspect ratio are depicted in the diagrams.
These are our results which confirms the compositional changes. Left side indicates the AFM images of various x values where we found linear dependence of roughness with cobalt /silicon composition. And pill bug like structures for higher cobalt stoichiometries.
2- Right side refers to the MFM images of the topographical images (left) and the cobalt enriched part in the MFM phase images which confirms the compositional change as in theory.
Nanoscale surface ripples generated by oblique-incidence ion bombardment of a solid are generally full of defects, and this has prevented the widespread adoption of ion bombardment as a nanofabrication tool. We advance a theory that predicts that remarkably defect-free ripples can be produced by ion bombardment of a binary material if the ion species, energy and angle of incidence are appropriately chosen. This high degree of order results from the coupling between the surface height and composition, and cannot be achieved by bombarding an elemental material.
surface ripples with an exceptionally low density of defects have already been generated by OIIB of silicon (ziberi jpcm 09)
Over the past few decades, techniques to produce submicron and nanoscale features on surfaces have emerged. Recent innovations in the area of micro- and nanofabrication have created a unique opportunity for patterning surfaces with features with lateral dimensions over the nano- to millimeter range. The microelectronics industry and need for smaller and faster computing systems have pushed this development during the last two decades.
Nanopatterns are nothing but patterns at nanoscale, which are used in various applications.
The important part here is to discuss a cheaper way of creation of nanopattern, which is ion beam sputtering(IBS). Irradiating or bombarding the solid surface using the ion beam can create long range ordered nanopatterns(nanoripples, nanodots-few nanometer ) within a few second to few minute of irradiation. The main importance of this process is we can pattern upto few cm^2 area using this technique by suitably adjusting the ion beam parameters(like ion energy, incident angle, ion fluence means total ions/cm2). Easily tunable parameters are the main advantage of this method. Other importance of this method are any type of ion beam can be used for any type of material over (semiconductors, insulators, metals). Also space selectivity the main advantage-we can choose space where to be patterned according to our own way. It is a maskless process unlike the case of photolithography and other patterning techniques.
Applications
Quantum dots in optoeletronic devices, Nanoripples for optical interference grating, Templates for functionalized surfaces, also these surfaces can be used for plasmonics application which I will come later . In optical grating and other application these nm-scale patterns are useful.
Diffusive surface current Ji
u is a slowly varying function Alpha= is positive leading to surface instability beta term=slope dependence sputtering yield Del- is a characteristic length order of penetration depth