This document summarizes key topics from a lecture on CMOS circuits and layout. It discusses the history of integrated circuits from the first transistor in 1958 to today's multi-billion transistor chips. CMOS gate design using nMOS and pMOS transistors is covered, along with pass transistors, latches, flip-flops, and multiplexers. Standard cell layout methodology is introduced along with examples of inverter and NAND gate layouts using stick diagrams. Wiring tracks and well spacing rules are also summarized.
Introduction to cmos in vlsi to seek for knowledgeRAviTiwaRi537420
This document outlines the key concepts covered in the first lecture of an introduction to CMOS VLSI design course, including:
1) The design of basic CMOS logic gates using nMOS pull-down and pMOS pull-up networks along with the concept of conduction complements.
2) The use of pass transistors and transmission gates to implement multiplexers and tristate buffers.
3) The design and operation of basic latches and flip-flops using D latches and a master-slave flip-flop configuration to prevent race conditions between clock signals.
This document provides an overview of the topics that will be covered in the EC6601 VLSI Design course taught by Mrs. R. Chitra at Ramco Institute of Technology in Rajapalayam. The topics include an introduction to integrated circuits and CMOS circuits, MOS transistor theory and processing technology, and how to build a simple CMOS chip. It also outlines the CMOS fabrication process which involves growing oxide layers, patterning polysilicon, and diffusing dopants to form transistors on a silicon wafer through multiple photolithography steps. The document includes diagrams of CMOS inverter structures and transistor operation.
This document discusses CMOS VLSI design and transistor theory. It begins with an introduction to VLSI and the different scales of integration. It then covers MOSFET operation and I-V characteristics in cutoff, linear, and saturation regions. The document discusses capacitance components of MOS transistors including gate, diffusion, overlap, and channel capacitances. It also summarizes non-ideal transistor effects such as mobility degradation, velocity saturation, channel length modulation, and threshold voltage variations.
This document discusses CMOS VLSI digital design. It covers physical principles of CMOS including dopants, nMOS and pMOS transistor operation, and CMOS inverters. It then discusses circuit-level CMOS design including combinational logic, sequential logic, datapaths, and memories. Fabrication steps for building CMOS circuits are outlined including oxidation, photolithography, etching, and diffusion. Circuit performance factors like capacitance, RC delay models, and crosstalk are also covered. Different circuit styles like dynamic logic and pass transistor logic are introduced. Finally, sequencing elements like latches and flip-flops used for sequential logic are discussed.
This document summarizes power in CMOS VLSI circuits. It discusses different sources of power consumption including dynamic power from switching capacitances and static power from leakage currents. Dynamic power is proportional to the activity factor, capacitance, supply voltage, and frequency. Static power comes from subthreshold leakage, gate leakage, junction leakage, and other leakage currents. The document provides examples of estimating power consumption and discusses techniques for reducing both dynamic and static power, such as clock gating, multi-threshold voltage techniques, and power gating.
This document provides an overview of topics that will be covered in the CSCE 613: Fundamentals of VLSI Chip Design course, including:
- Semiconductor theory and how doping creates n-type and p-type materials.
- How MOSFETs work as switches using voltage to control current flow. The basic structures of NMOS, PMOS, and CMOS logic gates.
- Logic gate design and transistor-level implementations of common gates like AND, OR, NAND, NOR.
- IC fabrication process which uses photolithography and multiple masking steps to build transistor layers on a silicon wafer.
- Design rules that define minimum feature sizes to avoid shorts or
This document provides an overview of the CSE460: VLSI Design course. It discusses the history of transistors and integrated circuits. The transistor was invented in 1947 and acted as an electrically controlled switch. The first integrated circuit was developed in 1959, combining multiple transistors on a single chip. Moore's law, proposed in 1965, observed that the number of transistors on a chip doubles every two years. The document outlines different chip types, the chip design and fabrication process, and design methodologies like the top-down and bottom-up approaches.
Introduction to cmos in vlsi to seek for knowledgeRAviTiwaRi537420
This document outlines the key concepts covered in the first lecture of an introduction to CMOS VLSI design course, including:
1) The design of basic CMOS logic gates using nMOS pull-down and pMOS pull-up networks along with the concept of conduction complements.
2) The use of pass transistors and transmission gates to implement multiplexers and tristate buffers.
3) The design and operation of basic latches and flip-flops using D latches and a master-slave flip-flop configuration to prevent race conditions between clock signals.
This document provides an overview of the topics that will be covered in the EC6601 VLSI Design course taught by Mrs. R. Chitra at Ramco Institute of Technology in Rajapalayam. The topics include an introduction to integrated circuits and CMOS circuits, MOS transistor theory and processing technology, and how to build a simple CMOS chip. It also outlines the CMOS fabrication process which involves growing oxide layers, patterning polysilicon, and diffusing dopants to form transistors on a silicon wafer through multiple photolithography steps. The document includes diagrams of CMOS inverter structures and transistor operation.
This document discusses CMOS VLSI design and transistor theory. It begins with an introduction to VLSI and the different scales of integration. It then covers MOSFET operation and I-V characteristics in cutoff, linear, and saturation regions. The document discusses capacitance components of MOS transistors including gate, diffusion, overlap, and channel capacitances. It also summarizes non-ideal transistor effects such as mobility degradation, velocity saturation, channel length modulation, and threshold voltage variations.
This document discusses CMOS VLSI digital design. It covers physical principles of CMOS including dopants, nMOS and pMOS transistor operation, and CMOS inverters. It then discusses circuit-level CMOS design including combinational logic, sequential logic, datapaths, and memories. Fabrication steps for building CMOS circuits are outlined including oxidation, photolithography, etching, and diffusion. Circuit performance factors like capacitance, RC delay models, and crosstalk are also covered. Different circuit styles like dynamic logic and pass transistor logic are introduced. Finally, sequencing elements like latches and flip-flops used for sequential logic are discussed.
This document summarizes power in CMOS VLSI circuits. It discusses different sources of power consumption including dynamic power from switching capacitances and static power from leakage currents. Dynamic power is proportional to the activity factor, capacitance, supply voltage, and frequency. Static power comes from subthreshold leakage, gate leakage, junction leakage, and other leakage currents. The document provides examples of estimating power consumption and discusses techniques for reducing both dynamic and static power, such as clock gating, multi-threshold voltage techniques, and power gating.
This document provides an overview of topics that will be covered in the CSCE 613: Fundamentals of VLSI Chip Design course, including:
- Semiconductor theory and how doping creates n-type and p-type materials.
- How MOSFETs work as switches using voltage to control current flow. The basic structures of NMOS, PMOS, and CMOS logic gates.
- Logic gate design and transistor-level implementations of common gates like AND, OR, NAND, NOR.
- IC fabrication process which uses photolithography and multiple masking steps to build transistor layers on a silicon wafer.
- Design rules that define minimum feature sizes to avoid shorts or
This document provides an overview of the CSE460: VLSI Design course. It discusses the history of transistors and integrated circuits. The transistor was invented in 1947 and acted as an electrically controlled switch. The first integrated circuit was developed in 1959, combining multiple transistors on a single chip. Moore's law, proposed in 1965, observed that the number of transistors on a chip doubles every two years. The document outlines different chip types, the chip design and fabrication process, and design methodologies like the top-down and bottom-up approaches.
Very Large Scale Integration (VLSI) is a solid career choice and offers job opportunities for ECE freshers pursuing core employment. In India and overseas, VLSI provides a variety of employment roles featuring outstanding professional growth and salary incentives.
This document provides an overview of CMOS VLSI design. It begins with an introduction to CMOS technology, including the basic structure and operation of NMOS and PMOS transistors. It then discusses DC characteristics such as different operating regions and I-V curves. The document covers fabrication processes like oxidation, photolithography, and etching. It also shows cross-sections and mask views for a sample CMOS inverter, highlighting steps like forming the n-well and adding contacts, polysilicon, diffusion and metal layers.
This document discusses delay modeling and analysis in CMOS VLSI circuits. It defines various delay metrics like propagation delay, rise/fall times, and contamination delay. RC delay models are presented to estimate delay where transistors are modeled as resistors and capacitances. Logical effort and parasitic delay linear models are also introduced for estimating gate delays based on their structure and fanout. Elmore delay calculations and minimizing diffusion capacitance through layout are covered as techniques for analyzing transient response and optimizing speed.
This document discusses non-ideal transistor behavior in CMOS VLSI design. It covers several effects that cause transistors to deviate from ideal behavior, including mobility degradation at high fields, velocity saturation, channel length modulation, threshold voltage variations from the body effect, drain-induced barrier lowering, and short channel effect. It also discusses various sources of leakage current such as subthreshold leakage, gate leakage, and junction leakage. Finally, it covers process and environmental variations and how different "corners" or combinations of variations are used to test circuit performance in non-ideal conditions.
This document discusses designing combinational logic circuits using static complementary CMOS design. It explains how to construct static CMOS circuits for logic gates like NAND and NOR by using pull-up and pull-down networks of PMOS and NMOS transistors respectively. Issues related to pass-transistor design like noise margins and static power consumption are also covered. The document provides details on implementing various logic functions using pass-transistor logic and differential pass-transistor logic. It discusses solutions to overcome the disadvantages of pass-transistor logic like level restoration and use of multiple threshold transistors.
The document provides an overview of an ECE5307 course on VLSI design. It discusses integrated circuits and CMOS technology. It covers the VLSI design process including behavioral, structural, and layout representations. Design approaches like full custom and semi-custom styles are compared. Fabrication process steps like oxidation, lithography, and metallization are outlined. Stick diagrams are introduced as a way to represent circuit layout using different colors or lines for layers like polysilicon and diffusion. Key rules for drawing stick diagrams are provided.
The document discusses CMOS transistor theory, including:
1) It describes the MOS capacitor structure and its operating modes of accumulation, depletion, and inversion.
2) It analyzes the I-V characteristics of nMOS and pMOS transistors in the cutoff, linear, and saturation regions based on the channel charge and carrier velocity.
3) It explains the gate, source, and drain capacitances of MOS transistors and how they impact speed. The gate capacitance contributes to channel charge while other capacitances are parasitic.
The document discusses CMOS combination logic design. It covers parameters like speed, power, area and noise margin for combinational logic circuits. It describes static CMOS design and its advantages like full swing output and no steady state power. It discusses transistor level implementation of logic gates like NAND, NOR, XOR and complex Boolean functions. Layout design considerations including stick diagrams, Euler paths and design rules are also covered.
VLSI affords IC designers the ability to design utilizing less space. Typically, electronic circuits incorporate a CPU, RAM, ROM, and other peripherals on a single PCBA. However, very large-scale integration (VLSI) technology affords an IC designer the ability to add all of these into one chip.
This document provides an introduction to VLSI (Very Large Scale Integration) and key concepts in computer-aided design of integrated circuits. It discusses how the number of transistors on chips has grown exponentially from just two transistors in the first integrated circuit in 1958 to billions of transistors in modern chips. It also summarizes different levels of integration from SSI to VLSI and how CMOS transistors work and have been scaled down in size over time from 10 micrometers to 0.18 micrometers.
This document provides an overview of VLSI design and MOS transistor principles. It discusses why VLSI design is important due to improvements in integration, power, speed and cost. A brief history of transistor invention and integrated circuit development is given. MOS transistor operation principles including NMOS and PMOS types are explained. CMOS logic gates like inverter, NAND and NOR are described. Electrical properties of CMOS like ideal I-V characteristics are covered.
The document provides an overview of CMOS design and fabrication. It discusses how VLSI allows many transistors to be integrated on a single chip using CMOS technology. The key aspects covered include:
- The basic operation of MOS transistors and how they function as switches in digital circuits. CMOS uses both NMOS and PMOS transistors for low power consumption.
- Common CMOS gates like inverters and how they are constructed using the pull-up PMOS and pull-down NMOS devices.
- The basic fabrication process which involves growing thin gate oxides, depositing polysilicon gates, and using lithography to pattern the transistors and interconnects layer-by-layer on a silicon wafer
This document provides an overview of VLSI design. It begins with definitions of integrated circuits, VLSI, MOS and CMOS. It then discusses the evolution of transistors from vacuum tubes to MOSFETs. Key developments included the first transistor in 1947, first integrated circuit in 1958 using bipolar junction transistors, and introduction of MOSFETs and CMOS logic in 1960-1963. The document covers Moore's Law, decreasing feature sizes, logic gates, pass transistors, multiplexers, latches, flip-flops and their implementations in CMOS technology. It provides circuit diagrams and explanations of various digital building blocks used in VLSI systems.
1) Stick diagrams are a popular method for symbolically designing VLSI layouts using colored lines to represent different layers like diffusion, metal, and polysilicon.
2) Design rules are used to communicate requirements between designers and fabricators to ensure layouts can be successfully materialized in silicon.
3) Stick diagrams convey layer information through color coding and are essentially the same as mask layouts but must show aspect ratios and dimensions between features for fabrication.
This document provides an overview of digital CMOS logic circuits. It discusses CMOS technology and how it has become the dominant technology for digital circuit implementation due to its low power dissipation and high integration density. The document then covers different logic circuit families including CMOS, bipolar, BiCMOS, and GaAs. It discusses characteristics of logic circuits like noise margins, propagation delay, power dissipation, silicon area, and fan-in/fan-out. Different digital system design styles using off-the-shelf components or custom VLSI chips are presented. The role of design abstraction and computer aids in facilitating large digital system design is also covered. Finally, the document discusses CMOS inverter circuit operation and the voltage transfer
The document describes the process for fabricating CMOS transistors on a silicon wafer. Key steps include:
1. Depositing materials and etching layers through photolithography to define transistors, wells, and wiring layers on the wafer.
2. Forming the n-well and p-substrate regions through diffusion or implantation of dopants exposed by photomasks.
3. Depositing additional layers like gate oxide and polysilicon to define the transistor gates through further photolithography and etching steps.
The document provides an introduction to CMOS VLSI design, covering MOS transistor theory and fabrication/layout. It discusses how MOS transistors are built on a silicon substrate using dopants to introduce carriers. The key modes of a MOS capacitor are described. Terminal voltages and regions of operation (cutoff, linear, saturation) for nMOS and pMOS transistors are explained. Equations are derived for channel charge, carrier velocity, and linear/saturation current-voltage characteristics. Second-order effects like channel length modulation and substrate bias are also covered.
The document provides an introduction to CMOS VLSI design, covering topics such as the fabrication of CMOS transistors using a lithography process, the operation of nMOS and pMOS transistors as switches, and how to build basic logic gates from transistors. It describes the multi-step CMOS fabrication process used to build integrated circuits on silicon wafers layer by layer, starting with doping the silicon substrate and building up the transistors, wires and interconnections between devices. The goal is to teach students the basics of designing and laying out simple CMOS chips at the transistor level.
This document provides an overview of an "Analog VLSI Design" course. The goals of the course are to introduce principles of analog integrated circuit design and CMOS technology. Students will learn about CMOS layout design using CAD tools and complete a design project. The course covers topics including CMOS technology, resistors, capacitors, MOSFETs, current mirrors, amplifiers, and data converters. Assessment includes homework, a project, and a final exam.
Applications of artificial Intelligence in Mechanical Engineering.pdfAtif Razi
Historically, mechanical engineering has relied heavily on human expertise and empirical methods to solve complex problems. With the introduction of computer-aided design (CAD) and finite element analysis (FEA), the field took its first steps towards digitization. These tools allowed engineers to simulate and analyze mechanical systems with greater accuracy and efficiency. However, the sheer volume of data generated by modern engineering systems and the increasing complexity of these systems have necessitated more advanced analytical tools, paving the way for AI.
AI offers the capability to process vast amounts of data, identify patterns, and make predictions with a level of speed and accuracy unattainable by traditional methods. This has profound implications for mechanical engineering, enabling more efficient design processes, predictive maintenance strategies, and optimized manufacturing operations. AI-driven tools can learn from historical data, adapt to new information, and continuously improve their performance, making them invaluable in tackling the multifaceted challenges of modern mechanical engineering.
Very Large Scale Integration (VLSI) is a solid career choice and offers job opportunities for ECE freshers pursuing core employment. In India and overseas, VLSI provides a variety of employment roles featuring outstanding professional growth and salary incentives.
This document provides an overview of CMOS VLSI design. It begins with an introduction to CMOS technology, including the basic structure and operation of NMOS and PMOS transistors. It then discusses DC characteristics such as different operating regions and I-V curves. The document covers fabrication processes like oxidation, photolithography, and etching. It also shows cross-sections and mask views for a sample CMOS inverter, highlighting steps like forming the n-well and adding contacts, polysilicon, diffusion and metal layers.
This document discusses delay modeling and analysis in CMOS VLSI circuits. It defines various delay metrics like propagation delay, rise/fall times, and contamination delay. RC delay models are presented to estimate delay where transistors are modeled as resistors and capacitances. Logical effort and parasitic delay linear models are also introduced for estimating gate delays based on their structure and fanout. Elmore delay calculations and minimizing diffusion capacitance through layout are covered as techniques for analyzing transient response and optimizing speed.
This document discusses non-ideal transistor behavior in CMOS VLSI design. It covers several effects that cause transistors to deviate from ideal behavior, including mobility degradation at high fields, velocity saturation, channel length modulation, threshold voltage variations from the body effect, drain-induced barrier lowering, and short channel effect. It also discusses various sources of leakage current such as subthreshold leakage, gate leakage, and junction leakage. Finally, it covers process and environmental variations and how different "corners" or combinations of variations are used to test circuit performance in non-ideal conditions.
This document discusses designing combinational logic circuits using static complementary CMOS design. It explains how to construct static CMOS circuits for logic gates like NAND and NOR by using pull-up and pull-down networks of PMOS and NMOS transistors respectively. Issues related to pass-transistor design like noise margins and static power consumption are also covered. The document provides details on implementing various logic functions using pass-transistor logic and differential pass-transistor logic. It discusses solutions to overcome the disadvantages of pass-transistor logic like level restoration and use of multiple threshold transistors.
The document provides an overview of an ECE5307 course on VLSI design. It discusses integrated circuits and CMOS technology. It covers the VLSI design process including behavioral, structural, and layout representations. Design approaches like full custom and semi-custom styles are compared. Fabrication process steps like oxidation, lithography, and metallization are outlined. Stick diagrams are introduced as a way to represent circuit layout using different colors or lines for layers like polysilicon and diffusion. Key rules for drawing stick diagrams are provided.
The document discusses CMOS transistor theory, including:
1) It describes the MOS capacitor structure and its operating modes of accumulation, depletion, and inversion.
2) It analyzes the I-V characteristics of nMOS and pMOS transistors in the cutoff, linear, and saturation regions based on the channel charge and carrier velocity.
3) It explains the gate, source, and drain capacitances of MOS transistors and how they impact speed. The gate capacitance contributes to channel charge while other capacitances are parasitic.
The document discusses CMOS combination logic design. It covers parameters like speed, power, area and noise margin for combinational logic circuits. It describes static CMOS design and its advantages like full swing output and no steady state power. It discusses transistor level implementation of logic gates like NAND, NOR, XOR and complex Boolean functions. Layout design considerations including stick diagrams, Euler paths and design rules are also covered.
VLSI affords IC designers the ability to design utilizing less space. Typically, electronic circuits incorporate a CPU, RAM, ROM, and other peripherals on a single PCBA. However, very large-scale integration (VLSI) technology affords an IC designer the ability to add all of these into one chip.
This document provides an introduction to VLSI (Very Large Scale Integration) and key concepts in computer-aided design of integrated circuits. It discusses how the number of transistors on chips has grown exponentially from just two transistors in the first integrated circuit in 1958 to billions of transistors in modern chips. It also summarizes different levels of integration from SSI to VLSI and how CMOS transistors work and have been scaled down in size over time from 10 micrometers to 0.18 micrometers.
This document provides an overview of VLSI design and MOS transistor principles. It discusses why VLSI design is important due to improvements in integration, power, speed and cost. A brief history of transistor invention and integrated circuit development is given. MOS transistor operation principles including NMOS and PMOS types are explained. CMOS logic gates like inverter, NAND and NOR are described. Electrical properties of CMOS like ideal I-V characteristics are covered.
The document provides an overview of CMOS design and fabrication. It discusses how VLSI allows many transistors to be integrated on a single chip using CMOS technology. The key aspects covered include:
- The basic operation of MOS transistors and how they function as switches in digital circuits. CMOS uses both NMOS and PMOS transistors for low power consumption.
- Common CMOS gates like inverters and how they are constructed using the pull-up PMOS and pull-down NMOS devices.
- The basic fabrication process which involves growing thin gate oxides, depositing polysilicon gates, and using lithography to pattern the transistors and interconnects layer-by-layer on a silicon wafer
This document provides an overview of VLSI design. It begins with definitions of integrated circuits, VLSI, MOS and CMOS. It then discusses the evolution of transistors from vacuum tubes to MOSFETs. Key developments included the first transistor in 1947, first integrated circuit in 1958 using bipolar junction transistors, and introduction of MOSFETs and CMOS logic in 1960-1963. The document covers Moore's Law, decreasing feature sizes, logic gates, pass transistors, multiplexers, latches, flip-flops and their implementations in CMOS technology. It provides circuit diagrams and explanations of various digital building blocks used in VLSI systems.
1) Stick diagrams are a popular method for symbolically designing VLSI layouts using colored lines to represent different layers like diffusion, metal, and polysilicon.
2) Design rules are used to communicate requirements between designers and fabricators to ensure layouts can be successfully materialized in silicon.
3) Stick diagrams convey layer information through color coding and are essentially the same as mask layouts but must show aspect ratios and dimensions between features for fabrication.
This document provides an overview of digital CMOS logic circuits. It discusses CMOS technology and how it has become the dominant technology for digital circuit implementation due to its low power dissipation and high integration density. The document then covers different logic circuit families including CMOS, bipolar, BiCMOS, and GaAs. It discusses characteristics of logic circuits like noise margins, propagation delay, power dissipation, silicon area, and fan-in/fan-out. Different digital system design styles using off-the-shelf components or custom VLSI chips are presented. The role of design abstraction and computer aids in facilitating large digital system design is also covered. Finally, the document discusses CMOS inverter circuit operation and the voltage transfer
The document describes the process for fabricating CMOS transistors on a silicon wafer. Key steps include:
1. Depositing materials and etching layers through photolithography to define transistors, wells, and wiring layers on the wafer.
2. Forming the n-well and p-substrate regions through diffusion or implantation of dopants exposed by photomasks.
3. Depositing additional layers like gate oxide and polysilicon to define the transistor gates through further photolithography and etching steps.
The document provides an introduction to CMOS VLSI design, covering MOS transistor theory and fabrication/layout. It discusses how MOS transistors are built on a silicon substrate using dopants to introduce carriers. The key modes of a MOS capacitor are described. Terminal voltages and regions of operation (cutoff, linear, saturation) for nMOS and pMOS transistors are explained. Equations are derived for channel charge, carrier velocity, and linear/saturation current-voltage characteristics. Second-order effects like channel length modulation and substrate bias are also covered.
The document provides an introduction to CMOS VLSI design, covering topics such as the fabrication of CMOS transistors using a lithography process, the operation of nMOS and pMOS transistors as switches, and how to build basic logic gates from transistors. It describes the multi-step CMOS fabrication process used to build integrated circuits on silicon wafers layer by layer, starting with doping the silicon substrate and building up the transistors, wires and interconnections between devices. The goal is to teach students the basics of designing and laying out simple CMOS chips at the transistor level.
This document provides an overview of an "Analog VLSI Design" course. The goals of the course are to introduce principles of analog integrated circuit design and CMOS technology. Students will learn about CMOS layout design using CAD tools and complete a design project. The course covers topics including CMOS technology, resistors, capacitors, MOSFETs, current mirrors, amplifiers, and data converters. Assessment includes homework, a project, and a final exam.
Applications of artificial Intelligence in Mechanical Engineering.pdfAtif Razi
Historically, mechanical engineering has relied heavily on human expertise and empirical methods to solve complex problems. With the introduction of computer-aided design (CAD) and finite element analysis (FEA), the field took its first steps towards digitization. These tools allowed engineers to simulate and analyze mechanical systems with greater accuracy and efficiency. However, the sheer volume of data generated by modern engineering systems and the increasing complexity of these systems have necessitated more advanced analytical tools, paving the way for AI.
AI offers the capability to process vast amounts of data, identify patterns, and make predictions with a level of speed and accuracy unattainable by traditional methods. This has profound implications for mechanical engineering, enabling more efficient design processes, predictive maintenance strategies, and optimized manufacturing operations. AI-driven tools can learn from historical data, adapt to new information, and continuously improve their performance, making them invaluable in tackling the multifaceted challenges of modern mechanical engineering.
Mechatronics is a multidisciplinary field that refers to the skill sets needed in the contemporary, advanced automated manufacturing industry. At the intersection of mechanics, electronics, and computing, mechatronics specialists create simpler, smarter systems. Mechatronics is an essential foundation for the expected growth in automation and manufacturing.
Mechatronics deals with robotics, control systems, and electro-mechanical systems.
Tools & Techniques for Commissioning and Maintaining PV Systems W-Animations ...Transcat
Join us for this solutions-based webinar on the tools and techniques for commissioning and maintaining PV Systems. In this session, we'll review the process of building and maintaining a solar array, starting with installation and commissioning, then reviewing operations and maintenance of the system. This course will review insulation resistance testing, I-V curve testing, earth-bond continuity, ground resistance testing, performance tests, visual inspections, ground and arc fault testing procedures, and power quality analysis.
Fluke Solar Application Specialist Will White is presenting on this engaging topic:
Will has worked in the renewable energy industry since 2005, first as an installer for a small east coast solar integrator before adding sales, design, and project management to his skillset. In 2022, Will joined Fluke as a solar application specialist, where he supports their renewable energy testing equipment like IV-curve tracers, electrical meters, and thermal imaging cameras. Experienced in wind power, solar thermal, energy storage, and all scales of PV, Will has primarily focused on residential and small commercial systems. He is passionate about implementing high-quality, code-compliant installation techniques.
Prediction of Electrical Energy Efficiency Using Information on Consumer's Ac...PriyankaKilaniya
Energy efficiency has been important since the latter part of the last century. The main object of this survey is to determine the energy efficiency knowledge among consumers. Two separate districts in Bangladesh are selected to conduct the survey on households and showrooms about the energy and seller also. The survey uses the data to find some regression equations from which it is easy to predict energy efficiency knowledge. The data is analyzed and calculated based on five important criteria. The initial target was to find some factors that help predict a person's energy efficiency knowledge. From the survey, it is found that the energy efficiency awareness among the people of our country is very low. Relationships between household energy use behaviors are estimated using a unique dataset of about 40 households and 20 showrooms in Bangladesh's Chapainawabganj and Bagerhat districts. Knowledge of energy consumption and energy efficiency technology options is found to be associated with household use of energy conservation practices. Household characteristics also influence household energy use behavior. Younger household cohorts are more likely to adopt energy-efficient technologies and energy conservation practices and place primary importance on energy saving for environmental reasons. Education also influences attitudes toward energy conservation in Bangladesh. Low-education households indicate they primarily save electricity for the environment while high-education households indicate they are motivated by environmental concerns.
Null Bangalore | Pentesters Approach to AWS IAMDivyanshu
#Abstract:
- Learn more about the real-world methods for auditing AWS IAM (Identity and Access Management) as a pentester. So let us proceed with a brief discussion of IAM as well as some typical misconfigurations and their potential exploits in order to reinforce the understanding of IAM security best practices.
- Gain actionable insights into AWS IAM policies and roles, using hands on approach.
#Prerequisites:
- Basic understanding of AWS services and architecture
- Familiarity with cloud security concepts
- Experience using the AWS Management Console or AWS CLI.
- For hands on lab create account on [killercoda.com](https://killercoda.com/cloudsecurity-scenario/)
# Scenario Covered:
- Basics of IAM in AWS
- Implementing IAM Policies with Least Privilege to Manage S3 Bucket
- Objective: Create an S3 bucket with least privilege IAM policy and validate access.
- Steps:
- Create S3 bucket.
- Attach least privilege policy to IAM user.
- Validate access.
- Exploiting IAM PassRole Misconfiguration
-Allows a user to pass a specific IAM role to an AWS service (ec2), typically used for service access delegation. Then exploit PassRole Misconfiguration granting unauthorized access to sensitive resources.
- Objective: Demonstrate how a PassRole misconfiguration can grant unauthorized access.
- Steps:
- Allow user to pass IAM role to EC2.
- Exploit misconfiguration for unauthorized access.
- Access sensitive resources.
- Exploiting IAM AssumeRole Misconfiguration with Overly Permissive Role
- An overly permissive IAM role configuration can lead to privilege escalation by creating a role with administrative privileges and allow a user to assume this role.
- Objective: Show how overly permissive IAM roles can lead to privilege escalation.
- Steps:
- Create role with administrative privileges.
- Allow user to assume the role.
- Perform administrative actions.
- Differentiation between PassRole vs AssumeRole
Try at [killercoda.com](https://killercoda.com/cloudsecurity-scenario/)
Supermarket Management System Project Report.pdfKamal Acharya
Supermarket management is a stand-alone J2EE using Eclipse Juno program.
This project contains all the necessary required information about maintaining
the supermarket billing system.
The core idea of this project to minimize the paper work and centralize the
data. Here all the communication is taken in secure manner. That is, in this
application the information will be stored in client itself. For further security the
data base is stored in the back-end oracle and so no intruders can access it.
Digital Twins Computer Networking Paper Presentation.pptxaryanpankaj78
A Digital Twin in computer networking is a virtual representation of a physical network, used to simulate, analyze, and optimize network performance and reliability. It leverages real-time data to enhance network management, predict issues, and improve decision-making processes.
Height and depth gauge linear metrology.pdfq30122000
Height gauges may also be used to measure the height of an object by using the underside of the scriber as the datum. The datum may be permanently fixed or the height gauge may have provision to adjust the scale, this is done by sliding the scale vertically along the body of the height gauge by turning a fine feed screw at the top of the gauge; then with the scriber set to the same level as the base, the scale can be matched to it. This adjustment allows different scribers or probes to be used, as well as adjusting for any errors in a damaged or resharpened probe.
Optimizing Gradle Builds - Gradle DPE Tour Berlin 2024Sinan KOZAK
Sinan from the Delivery Hero mobile infrastructure engineering team shares a deep dive into performance acceleration with Gradle build cache optimizations. Sinan shares their journey into solving complex build-cache problems that affect Gradle builds. By understanding the challenges and solutions found in our journey, we aim to demonstrate the possibilities for faster builds. The case study reveals how overlapping outputs and cache misconfigurations led to significant increases in build times, especially as the project scaled up with numerous modules using Paparazzi tests. The journey from diagnosing to defeating cache issues offers invaluable lessons on maintaining cache integrity without sacrificing functionality.
4. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 4
Growth Rate
53% compound annual growth rate over 50 years
– No other technology has grown so fast so long
Driven by miniaturization of transistors
– Smaller is cheaper, faster, lower in power!
– Revolutionary effects on society
[Moore65]
Electronics Magazine
5. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 5
Annual Sales
>1019 transistors manufactured in 2008
– 1 billion for every human on the planet
6. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 6
Invention of the Transistor
Vacuum tubes ruled in first half of 20th century
Large, expensive, power-hungry, unreliable
1947: first point contact transistor
– John Bardeen and Walter Brattain at Bell Labs
– See Crystal Fire
by Riordan, Hoddeson
AT&T Archives.
Reprinted with
permission.
7. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 7
Transistor Types
Bipolar transistors
– npn or pnp silicon structure
– Small current into very thin base layer controls
large currents between emitter and collector
– Base currents limit integration density
Metal Oxide Semiconductor Field Effect Transistors
– nMOS and pMOS MOSFETS
– Voltage applied to insulated gate controls current
between source and drain
– Low power allows very high integration
13. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 13
CMOS Gate Design
Activity:
– Sketch a 4-input CMOS NOR gate
A
B
C
D
Y
14. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 14
Complementary CMOS
Complementary CMOS logic gates
– nMOS pull-down network
– pMOS pull-up network
– a.k.a. static CMOS
pMOS
pull-up
network
output
inputs
nMOS
pull-down
network
Pull-up OFF Pull-up ON
Pull-down OFF Z (float) 1
Pull-down ON 0 X (crowbar)
15. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 15
Series and Parallel
nMOS: 1 = ON
pMOS: 0 = ON
Series: both must be ON
Parallel: either can be ON
(a)
a
b
a
b
g1
g2
0
0
a
b
0
1
a
b
1
0
a
b
1
1
OFF OFF OFF ON
(b)
a
b
a
b
g1
g2
0
0
a
b
0
1
a
b
1
0
a
b
1
1
ON OFF OFF OFF
(c)
a
b
a
b
g1 g2 0 0
OFF ON ON ON
(d) ON ON ON OFF
a
b
0
a
b
1
a
b
1
1 0 1
a
b
0 0
a
b
0
a
b
1
a
b
1
1 0 1
a
b
g1 g2
16. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 16
Conduction Complement
Complementary CMOS gates always produce 0 or 1
Ex: NAND gate
– Series nMOS: Y=0 when both inputs are 1
– Thus Y=1 when either input is 0
– Requires parallel pMOS
Rule of Conduction Complements
– Pull-up network is complement of pull-down
– Parallel -> series, series -> parallel
A
B
Y
17. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 17
Compound Gates
Compound gates can do any inverting function
Ex: (AND-AND-OR-INVERT, AOI22)
Y A B C D
A
B
C
D
A
B
C
D
A B C D
A B
C D
B
D
Y
A
C
A
C
A
B
C
D
B
D
Y
(a)
(c)
(e)
(b)
(d)
(f)
18. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 18
Example: O3AI
Y A B C D
A B
Y
C
D
D
C
B
A
19. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 19
Signal Strength
Strength of signal
– How close it approximates ideal voltage source
VDD and GND rails are strongest 1 and 0
nMOS pass strong 0
– But degraded or weak 1
pMOS pass strong 1
– But degraded or weak 0
Thus nMOS are best for pull-down network
20. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 20
Pass Transistors
Transistors can be used as switches
g = 0
s d
g = 1
s d
0 strong 0
Input Output
1 degraded 1
g = 0
s d
g = 1
s d
0 degraded 0
Input Output
strong 1
g = 1
g = 1
g = 0
g = 0
1
g
s d
g
s d
21. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 21
Transmission Gates
Pass transistors produce degraded outputs
Transmission gates pass both 0 and 1 well
g = 0, gb = 1
a b
g = 1, gb = 0
a b
0 strong 0
Input Output
1 strong 1
g
gb
a b
a b
g
gb
a b
g
gb
a b
g
gb
g = 1, gb = 0
g = 1, gb = 0
22. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 22
Tristates
Tristate buffer produces Z when not enabled
EN A Y
0 0 Z
0 1 Z
1 0 0
1 1 1
A Y
EN
A Y
EN
EN
23. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 23
Nonrestoring Tristate
Transmission gate acts as tristate buffer
– Only two transistors
– But nonrestoring
• Noise on A is passed on to Y
A Y
EN
EN
24. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 24
Tristate Inverter
Tristate inverter produces restored output
– Violates conduction complement rule
– Because we want a Z output
A
Y
EN
A
Y
EN = 0
Y = 'Z'
Y
EN = 1
Y = A
A
EN
25. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 25
Multiplexers
2:1 multiplexer chooses between two inputs
S D1 D0 Y
0 X 0 0
0 X 1 1
1 0 X 0
1 1 X 1
0
1
S
D0
D1
Y
26. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 26
Gate-Level Mux Design
How many transistors are needed? 20
1 0 (too many transistors)
Y SD SD
4
4
D1
D0
S Y
4
2
2
2 Y
2
D1
D0
S
27. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 27
Transmission Gate Mux
Nonrestoring mux uses two transmission gates
– Only 4 transistors
S
S
D0
D1
Y
S
28. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 28
Inverting Mux
Inverting multiplexer
– Use compound AOI22
– Or pair of tristate inverters
– Essentially the same thing
Noninverting multiplexer adds an inverter
S
D0 D1
Y
S
D0
D1
Y
0
1
S
Y
D0
D1
S
S
S
S
S
S
29. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 29
4:1 Multiplexer
4:1 mux chooses one of 4 inputs using two selects
– Two levels of 2:1 muxes
– Or four tristates
S0
D0
D1
0
1
0
1
0
1
Y
S1
D2
D3
D0
D1
D2
D3
Y
S1S0 S1S0 S1S0 S1S0
30. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 30
D Latch
When CLK = 1, latch is transparent
– D flows through to Q like a buffer
When CLK = 0, the latch is opaque
– Q holds its old value independent of D
a.k.a. transparent latch or level-sensitive latch
CLK
D Q
Latch
D
CLK
Q
31. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 31
D Latch Design
Multiplexer chooses D or old Q
1
0
D
CLK
Q
CLK
CLK
CLK
CLK
D
Q Q
Q
32. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 32
D Latch Operation
CLK = 1
D Q
Q
CLK = 0
D Q
Q
D
CLK
Q
33. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 33
D Flip-flop
When CLK rises, D is copied to Q
At all other times, Q holds its value
a.k.a. positive edge-triggered flip-flop, master-slave
flip-flop
Flop
CLK
D Q
D
CLK
Q
34. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 34
D Flip-flop Design
Built from master and slave D latches
QM
CLK
CLK
CLK
CLK
Q
CLK
CLK
CLK
CLK
D
Latch
Latch
D Q
QM
CLK
CLK
35. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 35
D Flip-flop Operation
CLK = 1
D
CLK = 0
Q
D
QM
QM
Q
D
CLK
Q
36. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 36
Race Condition
Back-to-back flops can malfunction from clock skew
– Second flip-flop fires late
– Sees first flip-flop change and captures its result
– Called hold-time failure or race condition
CLK1
D
Q1
Flop
Flop
CLK2
Q2
CLK1
CLK2
Q1
Q2
37. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 37
Nonoverlapping Clocks
Nonoverlapping clocks can prevent races
– As long as nonoverlap exceeds clock skew
We will use them in this class for safe design
– Industry manages skew more carefully instead
1
1
1
1
2
2
2
2
2
1
QM
Q
D
38. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 38
Gate Layout
Layout can be very time consuming
– Design gates to fit together nicely
– Build a library of standard cells
Standard cell design methodology
– VDD and GND should abut (standard height)
– Adjacent gates should satisfy design rules
– nMOS at bottom and pMOS at top
– All gates include well and substrate contacts
40. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 40
Example: NAND3
Horizontal N-diffusion and p-diffusion strips
Vertical polysilicon gates
Metal1 VDD rail at top
Metal1 GND rail at bottom
32 l by 40 l
41. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 41
Stick Diagrams
Stick diagrams help plan layout quickly
– Need not be to scale
– Draw with color pencils or dry-erase markers
c
A
VDD
GND
Y
A
VDD
GND
B C
Y
INV
metal1
poly
ndiff
pdiff
contact
NAND3
42. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 42
Wiring Tracks
A wiring track is the space required for a wire
– 4 l width, 4 l spacing from neighbor = 8 l pitch
Transistors also consume one wiring track
43. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 43
Well spacing
Wells must surround transistors by 6 l
– Implies 12 l between opposite transistor flavors
– Leaves room for one wire track
44. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 44
32 l
40 l
Area Estimation
Estimate area by counting wiring tracks
– Multiply by 8 to express in l
45. CMOS VLSI Design 4th Ed.
1: Circuits & Layout 45
Example: O3AI
Sketch a stick diagram for O3AI and estimate area
–
Y A B C D
A
VDD
GND
B C
Y
D
6 tracks =
48 l
5 tracks =
40 l