This document provides information about the "Raman and Luminescence Submicron Spectroscopy" Laboratory located at the V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science, Ukraine. The laboratory contains several lasers, spectrometers, microscopes, and temperature control equipment used to perform Raman and luminescence spectroscopy and mapping on semiconductor nanostructures with submicron spatial resolution. The laboratory studies properties such as chemical composition, strain, temperature, carrier mobility and concentration in nanostructures for applications in microelectronics and optoelectronics. Team members and their areas of research interest are also listed.
Raman Spectroscopy - Principle, Criteria, Instrumentation and ApplicationsPrabha Nagarajan
Basic principle of Raman scattering- Difference between Rayleigh and Raman Scattering- Major criteria for Raman active in compounds,-Stroke's lines and Anti-stoke lines- Difference and between IR and Raman spectroscopy- Wide applications of Raman spectroscopy.
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Raman Spectroscopy - Principle, Criteria, Instrumentation and ApplicationsPrabha Nagarajan
Basic principle of Raman scattering- Difference between Rayleigh and Raman Scattering- Major criteria for Raman active in compounds,-Stroke's lines and Anti-stoke lines- Difference and between IR and Raman spectroscopy- Wide applications of Raman spectroscopy.
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Tema:
*Introducción a la espectroscopía, realizado por el Dr. Carlos Saffe
Presentación del sexto encuentro del Taller Astro Divulgadores.
Mas información:
Web: www.astrodivulgadores.wordpress.com
Mail: astrodivulgadores@gmail.com
Bayesian modelling and computation for Raman spectroscopyMatt Moores
Raman spectroscopy can be used to identify molecules by the characteristic scattering of light from a laser. Each Raman-active dye label has a unique spectral signature, comprised by the locations and amplitudes of the peaks. The Raman spectrum is discretised into a multivariate observation that is highly collinear, hence it lends itself to a reduced-rank representation. We introduce a sequential Monte Carlo (SMC) algorithm to separate this signal into a series of peaks plus a smoothly-varying baseline, corrupted by additive white noise. By incorporating this representation into a Bayesian functional regression, we can quantify the relationship between dye concentration and peak intensity. We also estimate the model evidence using SMC to investigate long-range dependence between peaks. These methods have been implemented as an R package, using RcppEigen and OpenMP.
X- Rays were discovered by Wilhelm Roentgen, so x-rays are also called Roentgen rays.
X-ray diffraction in crystals was discovered by Max von Laue. The wavelength range is 10-7 to about 10-15 m.
The penetrating power of x-rays depends on energy-
Hard x-rays: High frequency & More energy
Soft x-rays: Less penetrating & Low energy
X-rays are short-wavelength electromagnetic radiations produced by the deceleration of high energy electrons or by electronic transitions of electrons in the inner orbital of atoms.
X-ray region- 0.1-100 A˚
Analytical purpose- 0.7-2 A˚
Properties: Highly penetrating invisible rays
Liberate minute amounts of heat on passing through matter
Not deflected by electric and magnetic fields
Poly energetic, having widespread energies and wavelengths
Cause ionization (adding or removing electrons in atoms and molecules)
Transmitted by (pass-through) healthy body tissue
Principle: X-ray diffraction is based on constructive interference of monochromatic x-rays and a crystalline sample.
The interaction of incident rays with the sample produces constructive interference when conditions satisfy Bragg’s law.
Production of x rays: X- Rays are generated when the high velocity of electrons impinge on a metal target.
1% of total energy of the electron beam is converted into X –radiation.
In mineral science, there are several analytical instruments used for various purpose, viz…
Scanning electron microscopy
X-ray diffraction
Transmission electron microscopy
X-ray fluorescence
Flame atomic absorption spectroscopy
Electron microprobe analysis
Secondary ion mass spectrometry
Atomic force microscopy
Dr. Toma Susi (University of Vienna, Austria) invited talk at the MRS Spring Meeting 2018 in Phoenix, AZ titled "Towards atomically precise manipulation of 2D nanostructures in the
electron microscope".
The public trial lecture presented by Mohammadreza Nematollahi on 8th of October 2014 at Norwegian University of Science and Technology. The theoretical models and the experimental progress of highly mismatched alloys, as well as their optoelectronic applications are covered.
Tra Trieste e Nova Gorica per lo studio dei fenomeni ultraveloci / Between Trieste and Nova Gorica for the study of ultra-fast phenomena - by Cesare Grazioli
El Centro Nacional de Aceleradores (CNA - US/CSIC/JA) es una de las infraestructuras Científico y Técnicas Singulares – ICTS en España, abiertas al uso por parte de instituciones públicas y empresas. Se hará una presentación de las instalaciones disponibles en el Centro, dando una visión global de las aplicaciones. Nos centraremos más detenidamente en los laboratorios disponibles para llevar a cabo ensayos de irradiación tanto en materiales como en dispositivos electrónicos.
Similar to Laboratory Raman spectroscopy ISP NASU (20)
Cancer cell metabolism: special Reference to Lactate PathwayAADYARAJPANDEY1
Normal Cell Metabolism:
Cellular respiration describes the series of steps that cells use to break down sugar and other chemicals to get the energy we need to function.
Energy is stored in the bonds of glucose and when glucose is broken down, much of that energy is released.
Cell utilize energy in the form of ATP.
The first step of respiration is called glycolysis. In a series of steps, glycolysis breaks glucose into two smaller molecules - a chemical called pyruvate. A small amount of ATP is formed during this process.
Most healthy cells continue the breakdown in a second process, called the Kreb's cycle. The Kreb's cycle allows cells to “burn” the pyruvates made in glycolysis to get more ATP.
The last step in the breakdown of glucose is called oxidative phosphorylation (Ox-Phos).
It takes place in specialized cell structures called mitochondria. This process produces a large amount of ATP. Importantly, cells need oxygen to complete oxidative phosphorylation.
If a cell completes only glycolysis, only 2 molecules of ATP are made per glucose. However, if the cell completes the entire respiration process (glycolysis - Kreb's - oxidative phosphorylation), about 36 molecules of ATP are created, giving it much more energy to use.
IN CANCER CELL:
Unlike healthy cells that "burn" the entire molecule of sugar to capture a large amount of energy as ATP, cancer cells are wasteful.
Cancer cells only partially break down sugar molecules. They overuse the first step of respiration, glycolysis. They frequently do not complete the second step, oxidative phosphorylation.
This results in only 2 molecules of ATP per each glucose molecule instead of the 36 or so ATPs healthy cells gain. As a result, cancer cells need to use a lot more sugar molecules to get enough energy to survive.
Unlike healthy cells that "burn" the entire molecule of sugar to capture a large amount of energy as ATP, cancer cells are wasteful.
Cancer cells only partially break down sugar molecules. They overuse the first step of respiration, glycolysis. They frequently do not complete the second step, oxidative phosphorylation.
This results in only 2 molecules of ATP per each glucose molecule instead of the 36 or so ATPs healthy cells gain. As a result, cancer cells need to use a lot more sugar molecules to get enough energy to survive.
introduction to WARBERG PHENOMENA:
WARBURG EFFECT Usually, cancer cells are highly glycolytic (glucose addiction) and take up more glucose than do normal cells from outside.
Otto Heinrich Warburg (; 8 October 1883 – 1 August 1970) In 1931 was awarded the Nobel Prize in Physiology for his "discovery of the nature and mode of action of the respiratory enzyme.
WARNBURG EFFECT : cancer cells under aerobic (well-oxygenated) conditions to metabolize glucose to lactate (aerobic glycolysis) is known as the Warburg effect. Warburg made the observation that tumor slices consume glucose and secrete lactate at a higher rate than normal tissues.
Slide 1: Title Slide
Extrachromosomal Inheritance
Slide 2: Introduction to Extrachromosomal Inheritance
Definition: Extrachromosomal inheritance refers to the transmission of genetic material that is not found within the nucleus.
Key Components: Involves genes located in mitochondria, chloroplasts, and plasmids.
Slide 3: Mitochondrial Inheritance
Mitochondria: Organelles responsible for energy production.
Mitochondrial DNA (mtDNA): Circular DNA molecule found in mitochondria.
Inheritance Pattern: Maternally inherited, meaning it is passed from mothers to all their offspring.
Diseases: Examples include Leber’s hereditary optic neuropathy (LHON) and mitochondrial myopathy.
Slide 4: Chloroplast Inheritance
Chloroplasts: Organelles responsible for photosynthesis in plants.
Chloroplast DNA (cpDNA): Circular DNA molecule found in chloroplasts.
Inheritance Pattern: Often maternally inherited in most plants, but can vary in some species.
Examples: Variegation in plants, where leaf color patterns are determined by chloroplast DNA.
Slide 5: Plasmid Inheritance
Plasmids: Small, circular DNA molecules found in bacteria and some eukaryotes.
Features: Can carry antibiotic resistance genes and can be transferred between cells through processes like conjugation.
Significance: Important in biotechnology for gene cloning and genetic engineering.
Slide 6: Mechanisms of Extrachromosomal Inheritance
Non-Mendelian Patterns: Do not follow Mendel’s laws of inheritance.
Cytoplasmic Segregation: During cell division, organelles like mitochondria and chloroplasts are randomly distributed to daughter cells.
Heteroplasmy: Presence of more than one type of organellar genome within a cell, leading to variation in expression.
Slide 7: Examples of Extrachromosomal Inheritance
Four O’clock Plant (Mirabilis jalapa): Shows variegated leaves due to different cpDNA in leaf cells.
Petite Mutants in Yeast: Result from mutations in mitochondrial DNA affecting respiration.
Slide 8: Importance of Extrachromosomal Inheritance
Evolution: Provides insight into the evolution of eukaryotic cells.
Medicine: Understanding mitochondrial inheritance helps in diagnosing and treating mitochondrial diseases.
Agriculture: Chloroplast inheritance can be used in plant breeding and genetic modification.
Slide 9: Recent Research and Advances
Gene Editing: Techniques like CRISPR-Cas9 are being used to edit mitochondrial and chloroplast DNA.
Therapies: Development of mitochondrial replacement therapy (MRT) for preventing mitochondrial diseases.
Slide 10: Conclusion
Summary: Extrachromosomal inheritance involves the transmission of genetic material outside the nucleus and plays a crucial role in genetics, medicine, and biotechnology.
Future Directions: Continued research and technological advancements hold promise for new treatments and applications.
Slide 11: Questions and Discussion
Invite Audience: Open the floor for any questions or further discussion on the topic.
THE IMPORTANCE OF MARTIAN ATMOSPHERE SAMPLE RETURN.Sérgio Sacani
The return of a sample of near-surface atmosphere from Mars would facilitate answers to several first-order science questions surrounding the formation and evolution of the planet. One of the important aspects of terrestrial planet formation in general is the role that primary atmospheres played in influencing the chemistry and structure of the planets and their antecedents. Studies of the martian atmosphere can be used to investigate the role of a primary atmosphere in its history. Atmosphere samples would also inform our understanding of the near-surface chemistry of the planet, and ultimately the prospects for life. High-precision isotopic analyses of constituent gases are needed to address these questions, requiring that the analyses are made on returned samples rather than in situ.
Richard's aventures in two entangled wonderlandsRichard Gill
Since the loophole-free Bell experiments of 2020 and the Nobel prizes in physics of 2022, critics of Bell's work have retreated to the fortress of super-determinism. Now, super-determinism is a derogatory word - it just means "determinism". Palmer, Hance and Hossenfelder argue that quantum mechanics and determinism are not incompatible, using a sophisticated mathematical construction based on a subtle thinning of allowed states and measurements in quantum mechanics, such that what is left appears to make Bell's argument fail, without altering the empirical predictions of quantum mechanics. I think however that it is a smoke screen, and the slogan "lost in math" comes to my mind. I will discuss some other recent disproofs of Bell's theorem using the language of causality based on causal graphs. Causal thinking is also central to law and justice. I will mention surprising connections to my work on serial killer nurse cases, in particular the Dutch case of Lucia de Berk and the current UK case of Lucy Letby.
Richard's entangled aventures in wonderlandRichard Gill
Since the loophole-free Bell experiments of 2020 and the Nobel prizes in physics of 2022, critics of Bell's work have retreated to the fortress of super-determinism. Now, super-determinism is a derogatory word - it just means "determinism". Palmer, Hance and Hossenfelder argue that quantum mechanics and determinism are not incompatible, using a sophisticated mathematical construction based on a subtle thinning of allowed states and measurements in quantum mechanics, such that what is left appears to make Bell's argument fail, without altering the empirical predictions of quantum mechanics. I think however that it is a smoke screen, and the slogan "lost in math" comes to my mind. I will discuss some other recent disproofs of Bell's theorem using the language of causality based on causal graphs. Causal thinking is also central to law and justice. I will mention surprising connections to my work on serial killer nurse cases, in particular the Dutch case of Lucia de Berk and the current UK case of Lucy Letby.
1. Laboratory
«Raman and Luminescence Submicron
Spectroscopy»
V. Lashkaryov Institute of Semiconductor Physics
National Academy of Science, Ukraine
41, pr. Nauky, Kyiv, Ukraine, 03028
National Academy of Science,
Ukraine www.microscopy.org.ua
2. “Raman and Luminescence submicron spectroscopy”
Laboratory
Lasers: HeCd (325 nm), Nd:YAG (355 nm) Ar-Kr
laser Stabilite 2018-RM Spectra Physics 2.5W
(USA);
Triple spectrometer Horiba
Jobin-Yvon T64000 (200÷1700
nm) (France);
Confocal microscope UV-Visible-NIR
Olympus BX41 (Japan);
XYZ motorized stage with step 0,1
mkm (Німечина);
Optical microcryostat RC102-CFM (3.5÷325К) (CIA
CRYO Industries, USA);
Microthermoelectrical cell
Linkam Sci. Instrum. THMS600
(78 ÷ 900K).
• Raman and luminescence microanalysis of emission and structural
properties, chemical composition of the semiconductor nanostructures
for micro- and optoelectronics with submicron spatial resolution.
• Raman and luminescence 2D-3D spatial mapping: strains, chemical
composition, temperature (thermography); concentration and carrier
mobility; optical emission of nanostructures;
• Low temperature investigations of the phonon, plasmon-phonon and
electron excitations.
We perform studies :
www.microscopy.org.ua
4. Kolomys Oleksandr
Senior Researcher, Ph.D.
e-mail: kolomys@isp.kiev.ua
Scientific interests: Raman and PL spectroscopy of А3В5, А3N and ZnO nanostructures.
Andrii Nikolenko
Senior Researcher, Ph.D.
e-mail:Nikolenko_mail@ukr.net
Scientific interests: phonon and emision properties of Si, SiGe, SiOx, nc-Si and carbon
nanostructures.
Kateryna Avramenko
Researcher, Ph.D.
e-mail: yessss@yandex.ru
Scientific interests: Spectroscopy of wide-bandgap GaN, Al(In)GaN, ZnO
semiconductor nanostructures.
Yurii Naseka
Researcher, Ph.D.
e-mail: naseka@isp.kiev.ua
Viktor Strelchuk
Head of Laboratory of Raman and Luminescence submicron spectroscopy
Leading Researcher, Doctor of Sciences,
Phone/FAX.: +38(044)525 64 73, int.: 4-45
e-mail: strelch@isp.kiev.ua
Artem Romanyuk
Ph.D. student
e-mail: cinjko89@ukr.net
5. InGaAs QD
Areas of interests
Semiconductor
nanomaterials
Carbon nanostructures
(nanotubes, graphene,
diamond, poly-diamond,
DLC, fullerenes, TiC, SiC)
Bionanomaterials
(cancer, SERS)
Chemical synthesis
Si, Ge, SiGe
(nanowires, quantum dots)
nano
Nitrides
(GaN, InGaN, AlN)
A3B5
(AlGaAs, InAs/InGaAs)
Si nanowires
Colloidal quantum dots
A2B6 nanostructures
(colloidal quantum dots)
Polycrystalline diamond films
Energy,eV
Intensity,arb.un.
LED InGaN
multilayered structures
6. In Cooperation with:
Ecole Superieure de Physique et de Chimie Industrielles,
CNRS, Paris, France
P.Tronc
Centre de Recherches sur l’Heteroepitaxie et ses Applications,
CNRS, Valbone, France
C. Deparis, Christian Morhain
Institute of microstructure physics RAS
Z.F. Krasilnik, A.V. Novikov
University of Arkansas, USA
G.J. Salamo,Yu.I. Mazur, Zh.M. Wang
Institute of Physics of Semiconductors, RAS
T. Shamirzaev
7. Raman scattering - (combination light scattering) – nonelastic (with
frequency change) light scattering on environment phonon vibrations.
Was experimentally discovered
in February 1928г. in Calcutta
(India) by Sir Chandrasekhara
Venkata Rāman (Nature, 31
march 1928).
1930 г. – Raman was awarded by
Nobel Prize.
What is Raman scattering?
Electronstate
n = 0
n = 1
= 0
= 1
= 3
Vibrational
state
IR
absorption
Relay
Raman
Stokes
Raman
AntiStokes
Resonant
Raman
Virtual state
Was simultaneously experimentally
discovered and theoretically
explained in February
1928г. in Moscow (USSR)
by L.I. Mandelshtam and
G.S. Landsberg
(Naturwissenschaften, 13
june 1928).
8. What can Raman Spectra tell us?
Band position:
Chemical
species,
symmetry Frequency Shift:
Strain,
temperature
Wavenumber or
Energy
Intensity:
Concentration
Width:
Structural
disorder
• Vibrational frequencies are characteristic of
chemical bonds or groups of bonds in a specific
molecule: normal modes
• Shifts of Vibrational frequencies are sensitive
to local environment of a molecule, such as
crystal phase, local strain, and degree of
crystallinity
=> A Raman spectrum provides a fingerprint
representing the set of bonds present in the
material
• Relative intensities within a spectrum can
quantify the orientation of a bond w.r.t. the
incoming laser polarization. The concentration of
a substance.
• Raman spectroscopy is complementary to IR.
9. What can confocal microspectroscopy give us?
o
2
Laser beam is focused to spot diameter d :
0.61
;
0.61 Relaycriterion
0.89
Focusdepth :
( )
od
NA
k
L
NA
For objective with
NA = 0.90; exc = 488 nm
d0 = 0.33 mm; L = 0.54 mm
Higher spatial resolution!XYZ – submicron spatial Raman mapping
10. Examples of confocal Raman and luminescence spectroscopy application
(spatial resolution 100 ÷ 500 nm)
Strain distribution in micro- and
nanoelectronics structures
Compression
Tension
-100
-50
0
-50
-100
-100
MPa
2x2 mm
Lipid, protein and starch content
in wheat grain
Photoluminescence control of laser
diode composition fluctuations
Phase distribution in
nanodiamond film
3000
2500
2000
1500
2800
2600
2400
2200
2000
1800
Intensity(counts/s)
30.5 31.0 31.5 32.0
Length X (µm)
350
nm
250
nm
3D Raman map intensity
distribution of Si-phonon band
SiO2 on Si (001)
11. In cooperation with:
• Ecole Superieure de Physique et de Chimie Industrielles, CNRS, Paris, France;
• Centre de Recherches sur l’Heteroepitaxie et ses Applications, CNRS, Valbone, France
=-40 K
=-200K
Strong magnetic anisotropy: H//c, Hc
easy-plane magnetization Hc (H//c)
expect at 5К (300K)
This work supported by NATO science programme, 2010-2011, NATO CLG 983878
Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural
studies V.V. Strelchuk, V.P. Bryksa, K.A. Avramenko, P.M. Lytvyn, M.Ya. Valakh, V.O. Pashchenko, O.M. Bludov, C. Deparis, C.
Morhain, P. Tronc // Semiconductor Physics, Quantum Electronics & Optoelectronics 14, 1, 31-40 (2011).
12. French-Ukrainian science and technology cooperation program «Dnipro» on 2011 -2012 .
Submicron Raman and Photoluminescence Topography of InAs/Al(Ga)As
quantum dots structures O.F. Kolomys, V.V. Strelchuk, T.S. Shamirzaev, A.S.
Romanyuk, P. Tronc // Applied Surface Science 260, 47-50 (2012).
Molecule of dye
cyanine C29H33N2IFörster resonance energy transfer (FRET)
Eabsorp
PL
Eexc
PL
Donor Acceptor
Eabsorp
PL
AlAs
barrier
Indirect
InAs QD
GaAs substrate
In cooperation with:
• Ecole Superieure de Physique et de Chimie Industrielles, CNRS, Paris, France;
• Institute of Physics of Semiconductors, RAS, Novosibirsk, Russia
13. 210
240
270
300
330
360
390
420
Raman shift (cm -1
)
AlAs-like group
InAs-like group
GaAs-like group
Substrate
Surface
Raman and photoluminescence InAs/Al(Ga)As structures
for sensor devices
Resonant Raman is the sensitive
method for study very thin (~ 10-20
nm) layers of heterostructure!
direct band QDs
AlGaAs
AlAs
InAs QDs
indirect band QDs
Substrate GaAs
Buffer GaAs
170 nm GaAs
45 nm AlAs
InAs QD
7 nm AlAs
1 nm Al0,3Ga0,7As
InAs QD
35 nm Al0,3Ga0,7As
200 250 300 350 400
LO(InAs)
LOInAlAs
(InAs)-like
LOInAlGaAs
(GaAs)-like
LOAlGaAs
(GaAs)-like
LOInAlAs
(AlAs)-like
Surface
LOAlGaAs
(AlAs)-like
LO(AlAs)
LO(GaAs)
Substrate
3
2
TO(AlAs)
1
4
6
7
8
9
Intensity(arb.un.)
Raman shift (cm
-1
)
5
Cap GaAs
1.6 1.7 1.8 1.9
1,92 eV
3,81 eV
1,92 eV
Intensity(arb.un.)
QD2
QD1 (b)
Energy (eV)
Sample B
3,81 eV
d = 8 nm
d = 30 nm
(a)
QD1
QD2
Sample A
QD1
QD2
3.81 еВ 1.91 еВ
14. )(104)( 91
Пасм
Scanning confocal Raman spectroscopy of silicon phase distribution in individual Si nanowires A. Nikolenko, V. Strelchuk, A. Klimovskaya,
P. Lytvyn, M. Valakh, Yu. Pedchenko, A. Voroschenko, D. Hourlier // Physica Status Solidi C 8, No. 3, 1012–1016 (2011).
In cooperation with:
• Institute of Electronics, Microelectronics and
Nanotechnology, Avenue Henri Poincare, BP
60069, 59652 Villeneuve d'Ascq Cedex,
France
Si-IV
Si-I
Si-ISi-IV
AFM image
R =80 nm
15. X-ray diffraction analysis and scanning
micro-Raman spectroscopy of
structural irregularities and strains
deep inside the multilayered
InGaN/GaN heterostructure
V. V. Strelchuk, V. P. Kladko, E. A.
Avramenko, O. F. Kolomys and N. V.
Safryuk, et al. Semiconductor, 2010,
Volume 44, Number 9, Pages 1199-1210.
Eexc = 2,54 eV
T = 300 K
Supported by the State Program of Ukraine “Nanotechnologies and Nanomaterials”
16. -1 0 1 2 3 4 5 6 7
2
3
4
568
569
570
-1 0 1 2 3 4 5 6 7
FWHM,cm
-1
position (mm)
Ramanshift,cm
-1
unstrained GaN
z-scan
clevage scan
E
high
2
Intensity,arb.un.
templaten
++
- GaNn0
-GaNsurface
n
++
-
GaN
2
4
6
8
compresivestrain,GPa
zxxz ),(
yxxy ),( Supported by the State Program of
Ukraine “Nanotechnologies and
Nanomaterials”
Confocal Raman depth-profile
analysis of the electrical and
structural properties in III-nitride
structures Strelchuk V.V., Bryksa V.P.,
Avramenko K.A., Valakh M.Ya.,
Belyaev A.E., Mazur Yu.I., Ware M.E.,
DeCuir E.A., Jr., and Salamo G. J. //
Physica status solidi (c) 8, 7-8, pages
2188–2190 (2011).
In cooperation with:
University of Arkansas, USA
17. 2600 2650 2700 2750 2800
1500 1750 2000 2250 2500 2750
SWCNT
2D
bulk graphite
two-layer graphene
Ramanintensity,arb.un.
Raman shift, cm
-1
one-layer graphene
exc
= 514 nm
G
Diamond Graphite Graphene Nanotube Phulerene
Low-frequency two-phonon modes step-like dispersion in resonance raman scattering of single-walled carbon nanotubes
V.O. Gubanov, M.M. Biliy, O.V. Rozhylo,V.V. Strelchuk, A.S. Nikolenko,M.Y.Valakh,Y.I. Prylutskyy, U. Ritter, P. Scharff //
Materialwissenschaft und Werkstofftechnik (Materials Science and Engineering Technology) 42, No. 1, p.33-36 (2011).
In cooperation with:
Ilmenau University of Technology, Institute of Physics, Department of Chemistry, Ilmenau, Germany
18. 0
200
400
600
800
1000
1200
1400
1600
1800
oTA
iTA
iLA
oTO
iTO
K
Frequency(cm
-1
)
iLO
200 300 400 500 600 700 800 900 1000 1100 1200
+
low IFM
-
low IFM
+
high IFM
oTO() oTO(M), iTA() iLO(), iTO(), iLA()
2.34
Ramanintensity,arb.un.
Raman shift, cm
-1
1.92
2.18
2.38
2.41
2.47
2.49
2.54
2.60
2.71
Excitationenergy,eV
oTO()
-
high IFM
oTAoTOIFMlow
iAiOIFMhigh
)(27
)(
204 1
cm
nmd
RBM
Intermediate frequency modes (IFM)
In cooperation with:
Ilmenau University of Technology, Institute of Physics, Department of Chemistry,
Ilmenau, Germany
Low-frequency two-phonon modes step-like dispersion in resonance raman scattering of
single-walled carbon nanotubes V.O. Gubanov, M.M. Biliy, O.V. Rozhylo,V.V. Strelchuk, A.S.
Nikolenko,M.Y.Valakh,Y.I. Prylutskyy, U. Ritter, P. Scharff // Materialwissenschaft und
Werkstofftechnik (Materials Science and Engineering Technology) 42, No. 1, p.33-36 (2011).
Supported by the State Program of Ukraine “Nanotechnologies and Nanomaterials”
19. 1 mm AFM
[001]
[011]
1 2
[011]
~80-85 nm
Self-assembled InGaAs/GaAs
quantum chain structure
For nanoelectronic
E0Eg
Ec
Ev
е2
е1
е0
h0
h1
h2
d
х
E1E2
Growth and characterization
of bilayer InAs/GaAs quantum dot
structuresB. L. Liang, Zh. M. Wang,
Yu. I. Mazur, V. V. Strelchuk, and G.
J. Salamo // Phys. stat. sol. (a) 203
(10) (2006) 2403
In cooperation with:
University of Arkansas, USA
Supported by the State
Program of Ukraine
“Nanotechnologies and
Nanomaterials”
Energy , eV
20. Recent Publications:
• Effect of erbium fluoride doping on the photoluminescence of SiOx films N. A.
Vlasenko, N. V. Sopinskii, E. G. Gule, V. V. Strelchuk, P. F. Oleksenko, L. I. Veligura,
A. S. Nikolenko and M. A. Mukhlyo // Semiconductors 46, 3, p. 338-343 (2012).
• Defect driven ferroelectricity and magnetism in nanocrystalline KTaO3 I.S. Golovina,
S.P. Kolesnik, V.P. Bryksa, V.V. Strelchuk , I.B. Yanchuk, I.N. Geifman, S.A.
Khainakov, S.V. Svechnikov, A.N. Morozovska // Physica B 407, 614–623 (2012).
• The effect of bio-conjugation on aging of the photoluminescence in CdSeTe–ZnS
core–shell quantum dots T.G. Kryshtab, L.V. Borkovska, O.F. Kolomys, N.O.
Korsunska, V.V. Strelchuk, L.P. Germash, R.Yu. Pechers’ka, G. Chornokur, S.S.
Ostapenko, C.M. Phelan, O.L. Stroyuk // Superlattices and Microstructures 51 (2012)
353–362.
• Raman study of Si nanoparticles formation in the annealed SiOx and SiOx:Er,F films
on sapphire substrate A.S. Nikolenko, M.V. Sopinskyy, V.V. Strelchuk, L.I. Veligura,
V.V. Gomonovych // Journal of Optoelectronics and Advanced Materials 14, 1-2, p.
120 - 124 (2012).
• Effects of the Lateral Ordering of Self-Assembled SiGe Nanoislands Grown on
Strained Si1 – xGex Buffer Layers V.V. Strelchuk, A. S. Nikolenko, P. M. Lytvyn, V. P.
Kladko, A. I. Gudymenko, M. Ya. Valakh, Z. F. Krasilnik, D. N. Lobanov, and A. V.
Novikov // Semiconductors 46, 5, pp. 647–654 (2012).
• Transformation of a SiC/por-SiC/TiO2 structure during rapid thermal annealing R. V.
Konakova, O. F. Kolomys, O. S. Lytvyn, O. B. Okhrimenko, V. V. Strelchuk, A. M.
Svetlichnyi and L. G. Linets // Semiconductors 46, 9, с. 1244-1247 (2012).
• Changes in the fractal and electronic structures of activated carbons produced by
ultrasonic radiation and the effect on their performance in supercapacitors B.Ya.
Venhryn, I.I. Grygorchak, Z.A. Stotsko, Yu.O. Kulyk, S.I. Mudry, V.V. Strelchuk, S.I.
Budzulyak, G.I. Dovbeshko, O.M. Fesenko // Archives of Materials Science and
Engineering 57, 1, 28-37 (2012).
• Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures D. S.
Abramkin, M. A. Putyato, S. A. Budennyy, A. K. Gutakovskii, B. R. Semyagin, V. V.
Preobrazhenskii, O. F. Kolomys, V. V. Strelchuk, and T. S. Shamirzaev // Journal of
Applied Physics 112, 083713 (2012).
• Submicron Raman and Photoluminescence Topography of InAs/Al(Ga)As quantum
dots structures O.F. Kolomys, V.V. Strelchuk, T.S. Shamirzaev, A.S. Romanyuk, P.
Tronc // Applied Surface Science 260, 47-50 (2012).
• Confocal Raman depth-profile analysis of the electrical and structural properties in III-
nitride structures Strelchuk V.V., Bryksa V.P., Avramenko K.A., Valakh M.Ya.,
Belyaev A.E., Mazur Yu.I., Ware M.E., DeCuir E.A., Jr., and Salamo G. J. // Physica
status solidi (c) 8, 7-8, pages 2188–2190 (2011).
• Confocal Raman depth-scanning spectroscopic study of phonon-plasmon modes in
GaN epilayers Strelchuk V.V., Bryksa V.P., Avramenko K.A., Valakh M.Ya., Belyaev
A.E., Mazur Yu.I., Ware M.E., DeCuir E.A., Jr., and Salamo G. J. // Journal of Applied
Physics 109, 123528 (2011).
• Scanning confocal Raman spectroscopy of silicon phase distribution in individual Si
nanowires A. Nikolenko, V. Strelchuk, A. Klimovskaya, P. Lytvyn, M. Valakh, Yu.
Pedchenko, A. Voroschenko, D. Hourlier // Physica Status Solidi C 8, No. 3, 1012–
1016 (2011).
• Low-frequency two-phonon modes step-like dispersion in resonance raman scattering
of single-walled carbon nanotubes V.O. Gubanov, M.M. Biliy, O.V. Rozhylo,V.V.
Strelchuk, A.S. Nikolenko,M.Y.Valakh,Y.I. Prylutskyy, U. Ritter, P. Scharff //
Materialwissenschaft und Werkstofftechnik (Materials Science and Engineering
Technology) 42, No. 1, p.33-36 (2011).
• Photovoltaic properties and photoconductivity in multilayer Ge/Si heterostructures with
Ge nanoislands S. V. Kondratenko, O. V. Vakulenko, Yu. N. Kozyrev, M. Yu.
Rubezhanska, A. G. Naumovets, A. S. Nikolenko, V. S. Lysenko, V. V. Strelchuk, C.
Teichert // Journal of Materials Science, 46, p.5737-5742 (2011).
• The nanometer scaled defects induces with the dislocation motion in II-VI insulated
semiconductors V.N. Babentsov, V.A. Boyko, A.F. Kolomys, G.A. Shepelski, V.V.
Strelchuk and N.I. Tarbaev // Advanced Materials Research 276, pp 195-202 (2011).
• Influence of oxidation temperature on photoluminescence and electrical properties of
amorphous thin film SiC:H:O+Tb S. O. Gordienko, A. N. Nazarov, A. V. Rusavsky, A.
V. Vasin, Yu. V. Gomeniuk, V. S. Lysenko, V. V. Strelchuk, A. S. Nikolenko, and S.
Ashok // Physica Status Solidi C, 8, 9, 2749–2751 (2011).
• Probing plasmonic system by the simultaneous measurement of Raman and
fluorescence signals of dye molecules M.M. Dvoynenko, Z.I. Kazantseva, V.V.
Strelchuk, O.F. Kolomys, E.G. Bortshagovsky, E.F. Venger, P. Tronc //
Semiconductor Physics, Quantum Electronics & Optoelectronics 14, 2, 195-199
(2011).
• Carrier transfer effect on transport in p-i-n structures with Ge quantum dots V. S.
Lysenko, Yu. V. Gomeniuk, V. V. Strelchuk, A. S. Nikolenko, S. V. Kondratenko, Yu.
N. Kozyrev and M. Yu. Rubezhanska, C. Teichert // Physical Review B 84, 115425
(2011).
• Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic,
electrical and microstructural studies V.V. Strelchuk, V.P. Bryksa, K.A. Avramenko,
P.M. Lytvyn, M.Ya. Valakh, V.O. Pashchenko, O.M. Bludov, C. Deparis, C. Morhain,
P. Tronc // Semiconductor Physics, Quantum Electronics & Optoelectronics 14, 1, 31-
40 (2011).
• Photoluminescence and Raman light scattering in spatially inhomogeneous
heteroepitaxial InGaN layers V.N. Pavlovskii, E.V. Lutsenko, G.P. Yablonskii, O.F.
Kolomys, V.V. Strelchuk, E.A. Avramenko, M. Ya. Valakh // Journal of Applied
Spectroscopy 78, 4, 553-559 (2011).
• Vibrational Raman spectra of CdSxSe1-x magic-size nanocrystals Volodymyr
Dzhagan, Nikolai Mel'nik, Olexandra Rayevska, Galyna Grozdyuk, Viktor Strelchuk,
Olga Plyashechnik, Stepan Kuchmii, Mykhailo Valakh // Rapid Research Letters 5, 7,
250-252 (2011).
• Gigantic uphill diffusion during self-assembled growth of Ge quantum dots on strained
SiGe sublayers M.Ya.Valakh, P.M. Lytvyn, A.S. Nikolenko, V.V. Strelchuk, Z.F.
Krasilnik, D.N. Lobanov, A.V. Novikov // Applied Physics Letters 96, 141909 (2010).
• High quality ZnO films deposited by radio-frequency magnetron sputtering using layer
by layer growth method A.I. Ievtushenko, V.A. Karpyna, V.I. Lazorenko, G.V.
Lashkarev, V.D. Khranovskyy, V.A. Baturin, O.Y. Karpenko, M.M. Lunika, K.A.
Avramenko, V.V. Strelchuk, O.M. Kutsay // Thin Solid Films 518, 16, 4529-4532
(2010).
21. Quantum dots: Self-organized and self-
limiting assembly
(Dimitri D. Vvedensky)
The Oxford Handbook of Nanoscience and
Technology. Volume III Applications
Oxford University Press 2010 (Edited by A.V.
Narlikar, Y.Y. Fu) Р.205-240
Our results in press
EMRS 2010 - 2012 Spring Meeting, Strasburg, France
EMRS 2011 - 2012 Fall Meeting, Warsaw, Poland
4th International Symposium on Growth of III-Nitrides
(ISGN - 2012) St. Petersburg, Russia
The 7th International Workshop on Zinc Oxide and
Related Materials” (IWZnO - 2012), Nice, France
EMRS 2011 Spring Meeting, Nica, France
International Conference on the Physics of
Semiconductors (ICPS 2012)", Switzerland, Zurich