This document discusses the fabrication and simulation of nmos and pmos transistors using MicroWind software. It describes creating layouts of 3 transistors - two nmos with different sizes and one pmos. The layout and analog simulation of each transistor is shown. The conclusions are that nmos transistors accurately transmit logic 0 but not 1, while pmos accurately transmit logic 1 but not 0. Input frequency to each transistor must be less than the maximum frequency determined by the gate on/off time to avoid faulty output.

1. Class No 03 & 09
Lab No. 08
Introduction To Micro wind Software
Or
Introduction To Layout & Fabrication
Aim:
 Fabrication of nmos & pmos transistors.
 Making 2 or 3 transistor (nmos or pmos) of different sizes & then define different rise/fall
time and high/low for each of the transistor and analyze the transistor characteristics.
 By considering high/low time limit the frequency.
Software Background:
The software includes the following portions:
Main Menu: In Main menu we have
From file menu we can select new file, insert layout, save as, colors etc
From view menu we can select refresh, select all, zoom in , zoom out etc
From view menu we can select copy, paste, protect all, unprotect all etc.
From simulate menu we can select run simulation, simulation parameters etc
From compile menu we can select compile one line, compile verilog file.
From analysis menu we can select design rule checker, parametric analysis etc
In help we can get help about rules, micro wind etc.
File View Edit Simulate
1
Micro-Electronics Technologies

2. Class No 03 & 09
Icon Menu:
In icon menu we have number of useful operations:
Open file , Save , Draw Box , Delete , Copy , Paste , Zoom in , Zoom
out , 2D view , 3D view etc
Layout Window:
Use to create layouts:
Palette Bar:
We have number of components for making the layouts:
Metal Layers.
Diffusion Layers.
Polysilicon Layers.
Connectors.
Clock Signals.
Vdd.
2
Micro-Electronics Technologies

3. Class No 03 & 09
Cmos Technology:
In cmos technology the combination of P-mosfets & N-mosfets is used for the better results. As
it is understood that n-mosfets completely transmits logic 0 but partially logic 1 while p-mosfets
completely transmits logic 1 but transmit logic 0 with error. So to overcome this problem p & n
mosfets are used in combination called Complementary Mosfets (cmos)
There are certain advantages of cmos technology.
o High noise immunity property is possessed by cmos.
o CMOS has relatively less number of transistors where as TTL has a number of transistors
and a number of resistors to perform the same function. Therefore CMOS has low static
power consumption.
o Due to less number of components CMOS devices are also cheaper & affordable.
o It enables chips that are small in size to have features like high operating speeds and
efficient usage of energy.
Apparatus:
 Microwindv2-7 installed PC.
Procedure:
 First of all open the software by clicking on-to the icon .
 For the specific gate select the required components by clicking the icon palette
.
 Microwind software includes a comprehensive library, from this library (palette), from
palette we can select Metal Layers, Diffusion Layers, Polysilicon Layers, Connectors,
Clock Signals, Vdd for making the device layouts.
 Draw different layers by selecting the layer & then drawing by click & drag.
 We can also see the 2D look & 3D look of the layout by clicking the required icon from
icon menu.
 The components attributes can be changed by double clicking on-to the component there
by changing the required field.
 After completing the circuit diagram simulate the circuit by clicking & the figures
window will appear.
3
Micro-Electronics Technologies

4. Class No 03 & 09
Gate 1: nmos
Components:
 Polysilicon layer for gate.
o Gate Length = 2.100 um Gate Width = 0.300 um
 Layer for nmos
o N Layer Length = 1.500 um N+ Layer Width = 1.500 um
+
 Metal 1 for connections.
 Connectors to connect N+ & metal 1
 Clock Signal as gate signal & as input at source.
o Clock Parameters For Gate:
 Rise Time: 0.025 ns
 Fall Time: 0.025 ns
 Time Low: 0.225 ns
 Time High: 0.225 ns
o Clock Parameters For Input:
 Rise Time: 0.025 ns
 Fall Time: 0.025 ns
 Time Low: 0.475ns
 Time High: 0.475ns
Layout Diagram:
4
Micro-Electronics Technologies

5. Class No 03 & 09
Analog Simulation Window:
Fig (a): For gate1 (nmos) Simulation window
Conclusion from the Figure (a):
 As nmos is strong logic zero transmitters that is why in figure the zero is transmiting to
output accurately but 1 is not transmitting accurately & providing some undetermined
state.
 As the gate on/off time is 0.225 ns so frequency will be .
 So for this transistor the signal at source must have frequency less than or equal to
.
o Input frequency to transistor must be ≤ .
 Any input to this transistor with frequency higher than this range will make the output
faulty and cannot transfer to output exactly.
Gate 2: nmos
Components:
 Polysilicon layer for gate.
o Gate Length = 2.940 um Gate Width = 0.300 um
 Layer for nmos
o N Layer Length = 2.400 um N+ Layer Width = 1.500 um
+
 Metal 1 for connections.
 Connectors to connect N+ & metal 1
5
Micro-Electronics Technologies

6. Class No 03 & 09
 Clock Signal as gate signal & as input at source.
o Clock Parameters For Gate:
 Rise Time: 0.035 ns
 Fall Time: 0.035 ns
 Time Low: 0.442ns
 Time High: 0.442ns
o Clock Parameters For Input:
 Rise Time: 0.025 ns
 Fall Time: 0.025 ns
 Time Low: 0.50ns
 Time High: 0.50ns
Layout Diagram:
6
Micro-Electronics Technologies

7. Class No 03 & 09
Analog Simulation Window:
Fig (b): For gate2 (nmos) Simulation window
Conclusion from the Figure (b):
 Again nmos is strong logic zero transmitters that is why in figure the zero is transmitting
to output accurately but 1 is not transmitting accurately & providing some undetermined
state.
 As the gate on/off time is 0.442 ns so frequency will be .
 So for this transistor the signal at source must have frequency less than or equal to
.
o Input frequency to transistor must be ≤ .
 Any input to this transistor with frequency higher than this range will make the output
faulty and cannot transfer to output exactly.
Gate 3: pmos
Components:
 Polysilicon layer for gate.
o Gate Length = 1.80 um Gate Width = 0.300 um
 Layer for pmos
o P Layer Length = 1.200 um P+ Layer Width = 0.900 um
+
 Metal 1 for connections.
 Connectors to connect P+ & metal 1
7
Micro-Electronics Technologies

8. Class No 03 & 09
 Clock Signal as gate signal & as input at source.
o Clock Parameters For Gate:
 Rise Time: 0.225ns
 Fall Time: 0.225ns
 Time Low: 0.225ns
 Time High: 0.225ns
o Clock Parameters For Input:
 Rise Time: 0.025 ns
 Fall Time: 0.025 ns
 Time Low 0.375ns
 Time High: 0.375ns
Layout Diagram:
8
Micro-Electronics Technologies

9. Class No 03 & 09
Analog Simulation Window:
Fig (c): For gate3 (pmos) Simulation window
Conclusion from the Figure ©:
 As pmos is strong logic one transmitters that is why in figure the one(i-e 0.5 in this case)
is transmitting to output accurately but 0 is not transmitting accurately & providing some
undetermined state.
 As the gate on/off time is 0.225 ns so frequency will be .
 So for this transistor the signal at source must have frequency less than or equal to
.
o Input frequency to transistor must be ≤ .
 Any input to this transistor with frequency higher than this range will make the output
faulty and cannot transfer to output exactly.
9
Micro-Electronics Technologies