SPICE MODEL of GT10Q301 (Professional+FWDS PSpice Model) in SPICE PARK
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SPICE MODEL of GT10Q301 (Professional+FWDS PSpice Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of GT10Q301 (Professional+FWDS PSpice Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: GT10Q301 MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
- 2. Circuit Configuration Collector Gate Emitter All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
- 3. IGBT Subcircuit Transfer Characteristics Circuit Simulation result 20A 16A 12A 8A 4A 0A 0V 4V 8V 12V 16V 20V I(U1:C) V_VGE Evaluation circuit D1 DGT10Q301 VCE 5Vdc VGE U1 15Vdc GT10Q301 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
- 4. Comparison Graph Simulation result 20 Measurement Simulation 16 COLLECTOR CURRENT, IC, (A) 12 8 4 0 0.0 4.0 8.0 12.0 16.0 20.0 GATE-EMITTER VOLTAGE, VGE, (V) Comparison table Test condition: VCE =5 (V) VGE (V) IC (A) %Error Measurement Simulation 0.5 7.350 7.684 4.55 1 7.800 7.978 2.28 2 8.300 8.404 1.25 4 8.950 9.027 0.86 8 9.900 9.953 0.54 12 10.650 10.698 0.45 16 11.350 11.372 0.19 20 12.050 12.058 0.07 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
- 5. Fall Time Characteristics Circuit Simulation result 20V 0V SEL>> -20V V(U1:G) 15A 10A 5A 0A -5A 9.4us 9.6us 9.8us 10.2us 10.6us 11.0us 11.4us I(U1:C) Time Evaluation circuit D2 RG2 U2 DGT10Q301 GT10Q301 -VGE 15Vdc75 L1 20mH 2 1 IC = 10 VCE 600 D1 Rg DGT10Q301 V1 = -15 V2 = 15 TD = 5u V1 75 TR = 10n U1 TF = 10n GT10Q301 PW = 4.998u PER = 100u 0 Test condition: IC=10 (A), VCC=600 (V), VGE= ±15 (V), RG=75(Ω) Parameter Unit Measurement Simulation %Error tf us 0.160 0.159 -0.491 toff us 0.500 0.496 -0.849 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
- 6. Gate Charge Characteristics Circuit Simulation result 20V 16V 12V 8V 4V 0V 0 20n 40n 60n 80n 100n V(W1:1) Time*1mA Evaluation circuit V2 0 IC D3 D2 DGT10Q301 Dbreak 10 I1 = 0 I2 = 1m W1 W TF = 10n + IOFF = 100uA U1 VCC TR = 10n ION = 0A GT10Q301 TD = 0 I2 - 600 PER = 700m PW = 7m 0 Test condition: VCC=600 (V), IC=10 (A), VGE=15 (V) Parameter Unit Measurement Simulation %Error Qge nc 13.000 12.522 -3.677 Qgc nc 50.000 48.000 -4.000 Qg nc 82.000 85.048 3.717 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
- 7. Saturation Characteristics Circuit Simulation result 20A 16A 12A 8A 4A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(IC) V(IC:-) Evaluation circuit D1 DGT10Q301 IC 0Adc VGE U1 15Vdc GT10Q301 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
- 8. Comparison Graph Simulation result Comparison table Test condition: VGE =15 (V) VCE (V) Ic(A) %Error Measurement Simulation 1 1.080 1.035 -4.14 2 1.230 1.197 -2.67 4 1.480 1.474 -0.40 8 1.900 1.925 1.32 12 2.300 2.296 -0.16 16 2.650 2.640 -0.38 20 3.000 3.005 0.16 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
- 9. Output Characteristics Circuit Simulation result 20A 15 13 12V 20 V V 16A V 12A VGE=10V 8A 4A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(R1) V_VCE Evaluation circuit R1 0.001m D1 DGT10Q301 VCE 5Vdc VGE U1 0 GT10Q301 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9
- 10. FWD Forward Current Characteristics Circuit Simulation result 20A 16A 12A 8A 4A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(Vsense) V(EC) Evaluation circuit Vsense V1 EC 0Vdc D1 0Vdc DGT10Q301 V2 U1 GT10Q301 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 10
- 11. Comparison Graph Simulation result Comparison table VF (V) IF(A) %Error Measurement Simulation 0.5 0.900 0.932 3.55 1 1.100 1.117 1.50 2 1.350 1.347 -0.21 4 1.650 1.643 -0.41 8 2.080 2.059 -1.03 12 2.430 2.399 -1.28 16 2.700 2.709 0.32 19.3 2.930 2.951 0.72 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 11
- 12. Reverse Recovery Characteristics Circuit Simulation result 10A 0A -10A 5.12us 5.20us 5.28us 5.36us 5.44us 5.52us I(FWD) Time Evaluation circuit L2 1 2 1.1uH D2 R1 U2 DGT10Q301 GT10Q301 75 -VGE 15 L1 20mH FWD 2 1 IC = 10 C VCE 600 D1 Rg U1 DGT10Q301 V1 = -15 GT10Q301 V2 = 15 TD = 5u V1 75 TR = 10n TF = 10n PW = 4.998u PER = 100u 0 Test condition: VCC=600 (V), IF=10 (A) –di/dt=200 A/usec Parameter Unit Measurement Simulation %Error trr ns 140.000 134.165 -4.168 Irr A 7.000 6.963 -0.524 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 12