The document provides detailed simulation results and characteristics for the insulated gate bipolar transistor (IGBT) part number 1MBH10D-120 manufactured by Fuji Electric. It includes transfer characteristics, fall time, gate charge, output characteristics, forward current characteristics, and reverse recovery characteristics, along with comparison tables and graphs that show measurement against simulation data with small error percentages. All data and analyses are copyrighted by Bee Technologies Inc. in 2010.

1. Device Modeling Report
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: 1MBH10D-120
MANUFACTURER: FUJI ELECTRIC
* REMARK: Free-Wheeling Diode (Special Model)
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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2. Transfer Characteristics
Circuit Simulation result
20A
15A
10A
5A
0A
0V 4V 8V 12V 16V 20V
I(U1:C)
V_VGE
Evaluation circuit
U1
1MBH10D-120
U2 VCE
D1MBH10D-120_SP 5Vdc
VGE
15Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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3. Comparison Graph
Simulation result
Comparison table
Test condition: VCE =5 (V)
VGE (V)
IC (A) %Error
Measurement Simulation
0.000 8.000 8.194 2.43
7.500 10.000 10.000 0.00
20.000 11.600 11.567 -0.28
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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4. Fall Time Characteristics
Circuit Simulation result
10A
5A
0A
4.0us 4.5us 5.0us 5.5us 6.0us 6.5us 7.0us
I(RL)
Time
Evaluation circuit
RL
Rg U1 59.8
1MBH10D-120
V1 = -15 U2
V2 = 15 16 D1MBH10D-120_SP
TD = 0.5u V1
TR = 10n VCE
TF = 1n 600Vdc
PW = 4u
PER = 20u
0
Test condition: IC=10 (A), VCC=600 (V)
Parameter Unit Measurement Simulation %Error
tf us 280.000 288.069 2.88
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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5. Gate Charge Characteristics
Circuit Simulation result
20V
15V
10V
5V
0V
0 20n 40n 60n 80n 100n 120n 140n
V(W1:1)
Time*1mA
Evaluation circuit
V2
0
IC
D2
U1 Dbreak 10
1MBH10D-120
U2
I1 = 0 D1MBH10D-120_SP
I2 = 1m W1 W
TF = 10n + IOFF = 100uA
TR = 10n ION = 0A VCC
TD = 0 I2 -
PER = 700m 600
PW = 7m
0
Test condition: VCC=600 (V), IC=10 (A), VGE=15 (V)
Parameter Unit Measurement Simulation %Error
Qge nc 18.000 18.293 1.63
Qgc nc 53.000 51.707 -2.44
Qg nc 100.000 100.006 0.01
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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6. Saturation Characteristics
Circuit Simulation result
20A
15A
10A
5A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
I(IC)
V(IC:-)
Evaluation circuit
U1
1MBH10D-120 IC
U2 0Adc
D1MBH10D-120_SP
VGE
15Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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7. Comparison Graph
Simulation result
Comparison table
Test condition: VGE =15 (V)
VCE (V)
IC (A) %Error
Measurement Simulation
1 1.375 1.381 0.44
2 1.575 1.566 -0.60
5 2.000 2.005 0.23
10 2.525 2.524 -0.04
20 3.400 3.400 0.00
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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8. Output Characteristics
Circuit Simulation result
20A
20V 15V 12V
15A
10A
10V
5A
VGE=8V
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
I(R1)
V_VCE
Evaluation circuit
R1
0.001m
U1
1MBH10D-120 VCE
U2 5Vdc
D1MBH10D-120_SP
VGE
0
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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9. FWD Forward Current Characteristics
Circuit Simulation result
20A
15A
10A
5A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(Vsense)
V(EC)
Evaluation circuit
Vsense
V1
EC
0Vdc
0Vdc
V2
U1
1MBH10D-120
U2
D1MBH10D-120_SP
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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10. Comparison Graph
Simulation result
Comparison table
VF (V)
IF(A) %Error
Measurement Simulation
1 1.220 1.221 0.07
2 1.375 1.381 0.41
5 1.670 1.669 -0.05
10 2.010 1.993 -0.83
15 2.265 2.262 -0.13
20 2.500 2.507 0.27
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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11. Reverse Recovery Characteristics
Circuit Simulation result
10A
8A
6A
4A
2A
0A
-2A
-4A
-6A
5.24us 5.32us 5.40us 5.48us 5.56us 5.64us
I(Vsense)
Time
Evaluation circuit
R1 Vsense
PARAMETERS:
V1 = -1200V TR = 0.2u
120
V2 = 1200V
TD = 5.37us U1
D1MBH10D-120_SP
TR = {TR}
TF = 10n V1
VPULSE
PW = 10u
PER = 1ms
0
Test condition: VCC=1200 (V), IC=10 (A), -di/dt=100 (A/us)
Parameter Unit Measurement Simulation %Error
trr nsec 88.000 88.568 0.65
Irr A 5.000 4.982 -0.36
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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