SPICE MODEL of GT20J321 (Professional+FWDS LTspice Model) in SPICE PARK
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SPICE MODEL of GT20J321 (Professional+FWDS LTspice Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of GT20J321 (Professional+FWDS LTspice Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: GT20J321 MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
- 2. Circuit Configuration All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
- 3. Transfer Characteristics Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
- 4. Comparison Graph Simulation result Comparison table Test condition: VCE =5 (V) VGE (V) IC (A) %Error Measurement Simulation 1 6.300 6.355 0.87 2 6.600 6.551 -0.75 5 7.000 6.953 -0.68 10 7.450 7.427 -0.31 20 8.100 8.138 0.47 30 8.650 8.716 0.76 40 9.200 9.226 0.28 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
- 5. Fall Time Characteristics Circuit Simulation result Time Evaluation circuit Test condition: IC=20 (A), VCC=300 (V), VGE=15 (V), RG=33(Ω) Parameter Unit Measurement Simulation %Error tf us 0.040 0.040 -0.497 tdoff us 0.240 0.245 2.266 toff us 0.340 0.347 1.941 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
- 6. Gate Charge Characteristics Circuit Simulation result Evaluation circuit Test condition: VCC=300 (V), IC=20 (A), VGE=15 (V) Parameter Unit Measurement Simulation %Error Qge nc 22.000 21.585 -1.886 Qgc nc 38.000 37.274 -1.911 Qg nc 105.000 106.578 1.503 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
- 7. Saturation Characteristics Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
- 8. Comparison Graph Simulation result Comparison table Test condition: VGE =15 (V) VCE (V) Ic(A) %Error Measurement Simulation 1 0.950 0.997 4.98 2 1.050 1.086 3.38 5 1.300 1.301 0.10 10 1.600 1.597 -0.18 20 2.050 2.053 0.14 30 2.400 2.398 -0.07 40 2.700 2.700 0.01 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
- 9. Output Characteristics Circuit Simulation result 20V 15V 9V 8V VGE=7V Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9
- 10. FWD Forward Current Characteristics Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 10
- 11. Comparison Graph Simulation result Comparison table VF (V) IF(A) %Error Measurement Simulation 1 0.850 0.850 0.00 2 0.950 0.947 -0.29 5 1.110 1.115 0.47 10 1.300 1.298 -0.14 20 1.560 1.562 0.12 30 1.780 1.774 -0.33 40 1.960 1.963 0.17 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 11
- 12. Reverse Recovery Characteristics Circuit Simulation result Time Evaluation circuit Test condition: VCC=300 (V), IF=20 (A) –di/dt=100 A/usec Parameter Unit Measurement Simulation %Error trr ns 110.000 130.585 18.714 Irr A 4.300 4.243 -1.328 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 12