SPICE MODEL of GT15J321 (Professional+FWDP LTspice Model) in SPICE PARK
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SPICE MODEL of GT15J321 (Professional+FWDP LTspice Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of GT15J321 (Professional+FWDP LTspice Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: GT15J321 MANUFACTURER: TOSHIBA *REMARK: Free-Wheeling Diode Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
- 2. Circuit Configuration All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
- 3. IGBT Subcircuit Transfer Characteristics Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
- 4. Comparison Graph Simulation result Comparison table Test condition: VCE =5 (V) VGE (V) IC (A) %Error Measurement Simulation 1 6.700 6.769 1.02 2 6.900 6.969 1.01 5 7.280 7.380 1.37 10 7.800 7.863 0.81 15 8.200 8.248 0.58 20 8.550 8.582 0.38 25 8.800 8.885 0.96 30 9.050 9.165 1.27 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
- 5. Fall Time Characteristics Circuit Simulation result Time Evaluation circuit Test condition: IC=15 (A), VCC=300 (V), VGE= 15 (V), RG=43(Ω) Parameter Unit Measurement Simulation %Error tf us 0.030 0.030 -1.072 toff us 0.340 0.345 1.353 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
- 6. Gate Charge Characteristics Circuit Simulation result Evaluation circuit Test condition: VCC=300 (V), IC=15(A), VGE=15 (V) Parameter Unit Measurement Simulation %Error Qge nc 20.000 20.000 0.000 Qgc nc 30.000 30.000 0.000 Qg nc 85.000 88.070 3.612 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
- 7. Saturation Characteristics Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
- 8. Comparison Graph Simulation result Comparison table Test condition: VGE =15 (V) VCE (V) Ic(A) %Error Measurement Simulation 1 0.915 0.956 4.51 2 1.050 1.060 0.96 5 1.330 1.314 -1.23 10 1.650 1.648 -0.13 15 1.900 1.916 0.85 20 2.150 2.148 -0.09 25 2.380 2.369 -0.45 30 2.600 2.605 0.19 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
- 9. Output Characteristics Circuit Simulation result 20V 15V 9V 8V VGE=7V Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9
- 10. FWD Forward Current Characteristics Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 10
- 11. Comparison Graph Simulation result Comparison table VF (V) IF(A) %Error Measurement Simulation 1 1.090 1.093 0.23 2 1.170 1.162 -0.71 5 1.260 1.269 0.73 10 1.375 1.377 0.11 15 1.460 1.459 -0.08 20 1.538 1.531 -0.46 25 1.600 1.598 -0.15 30 1.655 1.661 0.34 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 11
- 12. Reverse Recovery Characteristics Circuit Simulation result Time Evaluation circuit Test condition: VCC=300 (V), IF=15 (A), –di/dt=100 A/usec Parameter Unit Measurement Simulation %Error trr ns 110.000 108.821 -1.072 Irr A 4.200 4.077 -2.94 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 12