SPICE MODEL of GT10Q301 (Professional+FWDS LTspice Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: GT10Q301
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
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3. Transfer Characteristics
Circuit Simulation result
Evaluation circuit
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4. Comparison Graph
Simulation result
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Measurement
Simulation
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COLLECTOR CURRENT, IC, (A)
12
8
4
0
0.0 4.0 8.0 12.0 16.0 20.0
GATE-EMITTER VOLTAGE, VGE, (V)
Comparison table
Test condition: VCE =5 (V)
VGE (V)
IC (A) %Error
Measurement Simulation
0.5 7.350 7.684 4.55
1 7.800 7.978 2.28
2 8.300 8.404 1.25
4 8.950 9.027 0.86
8 9.900 9.953 0.54
12 10.650 10.698 0.45
16 11.350 11.372 0.19
20 12.050 12.058 0.07
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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5. Fall Time Characteristics
Circuit Simulation result
Time
Evaluation circuit
Test condition: IC=10 (A), VCC=600 (V), VGE= ±15 (V), RG=75(Ω)
Parameter Unit Measurement Simulation %Error
tf us 0.160 0.159 -0.491
toff us 0.500 0.496 -0.849
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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6. Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VCC=600 (V), IC=10 (A), VGE=15 (V)
Parameter Unit Measurement Simulation %Error
Qge nc 13.000 12.522 -3.677
Qgc nc 50.000 48.000 -4.000
Qg nc 82.000 85.048 3.717
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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7. Saturation Characteristics
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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8. Comparison Graph
Simulation result
Comparison table
Test condition: VGE =15 (V)
VCE (V)
Ic(A) %Error
Measurement Simulation
1 1.080 1.035 -4.14
2 1.230 1.197 -2.67
4 1.480 1.474 -0.40
8 1.900 1.925 1.32
12 2.300 2.296 -0.16
16 2.650 2.640 -0.38
20 3.000 3.005 0.16
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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9. Output Characteristics
Circuit Simulation result
15 13 12V
20 V V
V
VGE=10V
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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10. FWD Forward Current Characteristics
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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11. Comparison Graph
Simulation result
Comparison table
VF (V)
IF(A) %Error
Measurement Simulation
0.5 0.900 0.932 3.55
1 1.100 1.117 1.50
2 1.350 1.347 -0.21
4 1.650 1.643 -0.41
8 2.080 2.059 -1.03
12 2.430 2.399 -1.28
16 2.700 2.709 0.32
19.3 2.930 2.951 0.72
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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12. Reverse Recovery Characteristics
Circuit Simulation result
Time
Evaluation circuit
Test condition: VCC=600 (V), IF=10 (A) –di/dt=200 A/usec
Parameter Unit Measurement Simulation %Error
trr ns 140.000 154.257 10.184
Irr A 7.000 7.250 3.57
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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