SPICE MODEL of IDB06S60C (Professional Model) in SPICE PARK

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SPICE MODEL of IDB06S60C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

Device Modeling Report

COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDB06S60C
MANUFACTURER: Infineon
REMARK: Professional Model

Bee Technologies Inc.

All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1

Circuit Configuration

U1
IDB06S60C

All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2

DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
3

Forward Current Characteristics

Circuit Simulation result

10A

8A

6A

4A

2A

0A
0V 1.0V 2.0V 3.0V 4.0V
I(R1)
V_V1

Evaluation circuit

R1

0.01m

V1 U1
IDB06S60C

0

All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
4

Comparison Graph

Circuit Simulation result

Comparison table

VF (V)
IF (A) %Error
Measurement Simulation
0.5 0.929 0.974 4.84
1 1.000 1.031 3.10
2 1.133 1.127 -0.53
5 1.400 1.386 -1.00
10 1.800 1.796 -0.22

All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
5

Reverse Current Characteristic

Circuit Simulation result

10uA

1.0uA

100nA

10nA

1.0nA
100V 200V 300V 400V 500V 600V
I(U1:K)
V_V1

Evaluation circuit

V2

0
V1 U1
IDB06S60C

0

All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
6

Comparison Graph

Circuit Simulation result

Comparison table

IR (A)
VR (V) %Error
Measurement Simulation
100 1.200E-03 1.166E-03 -2.83
200 5.000E-03 5.134E-03 2.68
400 1.020E-01 1.061E-01 3.97
600 2.300E+00 2.260E+00 -1.76

All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
7

Junction Capacitance Characteristic

Circuit Simulation result

400p

300p

200p

100p

0
100mV 1.0V 10V 100V 1.0KV
I(V2)/(600V/1u)
V(R)

Evaluation circuit

V2
R

0

V1 = 0 V1 U1
V2 = 600 IDB06S60C
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m

0

All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
8

Comparison Graph

Circuit Simulation result

Comparison table

C (pF)
VR (V) %Error
Measurement Simulation
0.5 294 295.505 0.51
1 267 268.126 0.42
2 230 231.492 0.65
5 175 173.193 -1.03
10 133 132.062 -0.71
20 102 99.194 -2.75
50 68 69.129 1.66
100 52 54.527 4.86
200 43 44.800 4.19
500 38 36.862 -2.99

All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
9

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SPICE MODEL of IDB06S60C (Professional Model) in SPICE PARK

1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: IDB06S60C MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1

3. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3

4. Forward Current Characteristics Circuit Simulation result 10A 8A 6A 4A 2A 0A 0V 1.0V 2.0V 3.0V 4.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 IDB06S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4

5. Comparison Graph Circuit Simulation result Comparison table VF (V) IF (A) %Error Measurement Simulation 0.5 0.929 0.974 4.84 1 1.000 1.031 3.10 2 1.133 1.127 -0.53 5 1.400 1.386 -1.00 10 1.800 1.796 -0.22 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5

6. Reverse Current Characteristic Circuit Simulation result 10uA 1.0uA 100nA 10nA 1.0nA 100V 200V 300V 400V 500V 600V I(U1:K) V_V1 Evaluation circuit V2 0 V1 U1 IDB06S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6

7. Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) %Error Measurement Simulation 100 1.200E-03 1.166E-03 -2.83 200 5.000E-03 5.134E-03 2.68 400 1.020E-01 1.061E-01 3.97 600 2.300E+00 2.260E+00 -1.76 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7

8. Junction Capacitance Characteristic Circuit Simulation result 400p 300p 200p 100p 0 100mV 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 U1 V2 = 600 IDB06S60C TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8

9. Comparison Graph Circuit Simulation result Comparison table C (pF) VR (V) %Error Measurement Simulation 0.5 294 295.505 0.51 1 267 268.126 0.42 2 230 231.492 0.65 5 175 173.193 -1.03 10 133 132.062 -0.71 20 102 99.194 -2.75 50 68 69.129 1.66 100 52 54.527 4.86 200 43 44.800 4.19 500 38 36.862 -2.99 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9

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