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Device Modeling Report




COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: GT15J321
MANUFACTURER: TOSHIBA
* REMARK: Free-Wheeling Diode Special Model




                    Bee Technologies Inc.

       All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                      1
Circuit Configuration




             All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                            2
Transfer Characteristics

Circuit Simulation result




Evaluation circuit




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                    3
Comparison Graph

Simulation result




Comparison table


Test condition: VCE =5 (V)


                                             VGE (V)
               IC (A)                                                       %Error
                              Measurement             Simulation
                         1                6.700                 6.769              1.02
                         2                6.900                 6.969              1.01
                         5                7.280                 7.380              1.37
                        10                7.800                 7.863              0.81
                        15                8.200                 8.248              0.58
                        20                8.550                 8.582              0.38
                        25                8.800                 8.885              0.96
                        30                9.050                 9.165              1.27




                    All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                          4
Fall Time Characteristics

Circuit Simulation result




                                                Time


Evaluation circuit




Test condition: IC=15 (A), VCC=300 (V), VGE= 15 (V), RG=43(Ω)


       Parameter        Unit     Measurement               Simulation               %Error
            tf           us                   0.030                  0.030             -1.072
           toff          us                   0.340                  0.346             1.838

                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                                5
Gate Charge Characteristics

Circuit Simulation result




Evaluation circuit




Test condition: VCC=300 (V), IC=15 (A), VGE=15 (V)


       Parameter        Unit     Measurement               Simulation               %Error
           Qge           nc                 20.000                  20.000             0.000
           Qgc           nc                 30.000                  30.000             0.000
           Qg            nc                 85.000                  88.038             3.574

                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                               6
Saturation Characteristics

Circuit Simulation result




Evaluation circuit




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                    7
Comparison Graph

Simulation result




Comparison table


Test condition: VGE =15 (V)


                                             VCE (V)
               Ic(A)                                                        %Error
                              Measurement             Simulation
                         1                0.915                 0.956              4.51
                         2                1.050                 1.060              0.96
                         5                1.330                 1.314              -1.23
                        10                1.650                 1.648              -0.13
                        15                1.900                 1.916              0.85
                        20                2.150                 2.148              -0.09
                        25                2.380                 2.369              -0.45
                        30                2.600                 2.605              0.19




                    All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                           8
Output Characteristics

Circuit Simulation result



                                              20V   15V                         9V




                                                                                8V




                                                                          VGE=7V




Evaluation circuit




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                     9
FWD Forward Current Characteristics

Circuit Simulation result




Evaluation circuit




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                    10
Comparison Graph

Simulation result




Comparison table


                                              VF (V)
               IF(A)                                                        %Error
                              Measurement              Simulation
                         1                1.090                 1.093              0.23
                         2                1.170                 1.162              -0.71
                         5                1.260                 1.269              0.73
                        10                1.375                 1.377              0.11
                        15                1.460                 1.459              -0.08
                        20                1.538                 1.531              -0.46
                        25                1.600                 1.598              -0.15
                        30                1.655                 1.661              0.34




                    All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                           11
Reverse Recovery Characteristics

Circuit Simulation result




                                                Time


Evaluation circuit




Test condition: VCC=300 (V), IF=15 (A), –di/dt=100 A/usec

       Parameter        Unit     Measurement               Simulation               %Error
            trr          ns                110.000                 109.810             -0.173
            Irr             A                 4.200                  4.208             0.185



                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                                12

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SPICE MODEL of GT15J321 (Professional+FWD+SP LTspice Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: GT15J321 MANUFACTURER: TOSHIBA * REMARK: Free-Wheeling Diode Special Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
  • 2. Circuit Configuration All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
  • 3. Transfer Characteristics Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
  • 4. Comparison Graph Simulation result Comparison table Test condition: VCE =5 (V) VGE (V) IC (A) %Error Measurement Simulation 1 6.700 6.769 1.02 2 6.900 6.969 1.01 5 7.280 7.380 1.37 10 7.800 7.863 0.81 15 8.200 8.248 0.58 20 8.550 8.582 0.38 25 8.800 8.885 0.96 30 9.050 9.165 1.27 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
  • 5. Fall Time Characteristics Circuit Simulation result Time Evaluation circuit Test condition: IC=15 (A), VCC=300 (V), VGE= 15 (V), RG=43(Ω) Parameter Unit Measurement Simulation %Error tf us 0.030 0.030 -1.072 toff us 0.340 0.346 1.838 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
  • 6. Gate Charge Characteristics Circuit Simulation result Evaluation circuit Test condition: VCC=300 (V), IC=15 (A), VGE=15 (V) Parameter Unit Measurement Simulation %Error Qge nc 20.000 20.000 0.000 Qgc nc 30.000 30.000 0.000 Qg nc 85.000 88.038 3.574 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
  • 7. Saturation Characteristics Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
  • 8. Comparison Graph Simulation result Comparison table Test condition: VGE =15 (V) VCE (V) Ic(A) %Error Measurement Simulation 1 0.915 0.956 4.51 2 1.050 1.060 0.96 5 1.330 1.314 -1.23 10 1.650 1.648 -0.13 15 1.900 1.916 0.85 20 2.150 2.148 -0.09 25 2.380 2.369 -0.45 30 2.600 2.605 0.19 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
  • 9. Output Characteristics Circuit Simulation result 20V 15V 9V 8V VGE=7V Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9
  • 10. FWD Forward Current Characteristics Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 10
  • 11. Comparison Graph Simulation result Comparison table VF (V) IF(A) %Error Measurement Simulation 1 1.090 1.093 0.23 2 1.170 1.162 -0.71 5 1.260 1.269 0.73 10 1.375 1.377 0.11 15 1.460 1.459 -0.08 20 1.538 1.531 -0.46 25 1.600 1.598 -0.15 30 1.655 1.661 0.34 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 11
  • 12. Reverse Recovery Characteristics Circuit Simulation result Time Evaluation circuit Test condition: VCC=300 (V), IF=15 (A), –di/dt=100 A/usec Parameter Unit Measurement Simulation %Error trr ns 110.000 109.810 -0.173 Irr A 4.200 4.208 0.185 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 12