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Device Modeling Report




COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: GT20J321
MANUFACTURER: TOSHIBA
* REMARK: Free-Wheeling Diode Special Model




                    Bee Technologies Inc.

       All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                      1
Circuit Configuration

           Collector




    Gate




           Emitter




                  All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                 2
Transfer Characteristics

Circuit Simulation result

                 40A




                 30A




                 20A




                 10A




                     0A
                          0V               4V       8V              12V      16V     20V
                               I(U1:C)
                                                            V_VGE




Evaluation circuit




                                                              U2
                                                              DGT20J321_SP
                                                                              VCE
                                                                              5Vdc

                                         VGE     U1
                                         15Vdc   GT20J321



                                                     0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                           3
Comparison Graph

Simulation result




Comparison table


Test condition: VCE =5 (V)


                                             VGE (V)
               IC (A)                                                       %Error
                              Measurement             Simulation
                         1                6.300                 6.355              0.87
                         2                6.600                 6.551              -0.75
                         5                7.000                 6.953              -0.68
                        10                7.450                 7.427              -0.31
                        20                8.100                 8.138              0.47
                        30                8.650                 8.716              0.76
                        40                9.200                 9.226              0.28




                    All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                           4
Fall Time Characteristics

Circuit Simulation result

                 400V
                 300V
                 200V
                 100V
                   0V
                         V(U1:C)
                  20V



                 SEL>>
                    0V
                         V(U1:G)
                  24A
                  16A

                   8A
                   0A
                   9.4us      9.8us                      10.2us                     10.6us     11.0us   11.4us
                       I(U1:C)
                                                                         Time



Evaluation circuit


                                                                        D2
                                                  RG2                   DGT20J321


                                               -VGE
                                               15Vdc33   U2               L1
                                                         GT20J321       20mH
                                                                    2               1
                                                                        IC = 20
                                                                                               VCE
                                                                                               300



                                                                        D1
                                                 Rg                     DGT20J321
                            V1 = 0
                            V2 = 15
                            TD = 5u       V1     33
                            TR = 10n                     U1
                            TF = 10n                     GT20J321
                            PW = 4.998u
                            PER = 100u

                                                             0




Test condition: IC=20 (A), VCC=300 (V), VGE=15 (V), RG=33(Ω)


       Parameter         Unit             Measurement                                   Simulation        %Error
            tf           us                                0.040                               0.040             0.000
          tdoff          us                                0.240                               0.244             1.822
           toff          us                                0.340                               0.347             2.086

                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                                                         5
Gate Charge Characteristics

Circuit Simulation result

                20V




                16V




                12V




                 8V




                 4V




                 0V
                      0         20n      40n         60n            80n          100n        120n   140n
                          V(W1:1)
                                                        Time*1mA




Evaluation circuit


                                                                          V2



                                                                          0
                                                                                                    IC
                                                                               U2          D2
                                                                               DGT20J321_SPDbreak   20

                     I1 = 0
                     I2 = 1m              W1         W
                     TF = 10n              +         IOFF = 100uA    U1                             VCC
                     TR = 10n                        ION = 0A        GT20J321
                     TD = 0       I2           -                                                    300
                     PER = 700m
                     PW = 7m
                                                                      0




Test condition: VCC=300 (V), IC=20 (A), VGE=15 (V)


       Parameter           Unit        Measurement                        Simulation                %Error
           Qge              nc                      22.000                            21.858               -0.645
           Qgc              nc                      38.000                            37.195               -2.118
           Qg               nc                     105.000                          106.576                1.501

                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                                                    6
Saturation Characteristics

Circuit Simulation result

                     40A




                     30A




                     20A




                     10A




                      0A
                           0V            1.0V   2.0V             3.0V     4.0V       5.0V
                                I(IC)
                                                       V(IC:-)




Evaluation circuit




                                                           U2
                                                           DGT20J321_SP
                                                                          IC
                                                                          0Adc
                                         VGE    U1
                                 15Vdc          GT20J321




                                                       0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                            7
Comparison Graph

Simulation result




Comparison table


Test condition: VGE =15 (V)


                                             VCE (V)
               Ic(A)                                                        %Error
                              Measurement             Simulation
                         1                0.950                 0.997              4.99
                         2                1.050                 1.086              3.38
                         5                1.300                 1.301              0.10
                        10                1.600                 1.597              -0.18
                        20                2.050                 2.052              0.11
                        30                2.400                 2.398              -0.07
                        40                2.700                 2.700              0.01




                    All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                           8
Output Characteristics

Circuit Simulation result


                 40A

                                                        20V        15V                9V

                 30A




                 20A
                                                                                      8V


                 10A

                                                                                  VGE=7V

                     0A
                          0V                 1.0V     2.0V             3.0V    4.0V   5.0V
                               I(R1)
                                                               V_VCE




Evaluation circuit

                                                                       R1

                                                                   0.001m



                                                                U2
                                                                DGT20J321_SP   VCE
                                                                               5Vdc


                                       VGE          U1
                                       0            GT20J321




                                                        0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                             9
FWD Forward Current Characteristics

Circuit Simulation result

                     40A




                     30A




                     20A




                     10A




                      0A
                           0V         0.5V    1.0V         1.5V    2.0V        2.5V   3.0V
                                I(Vsense)
                                                           V(EC)




Evaluation circuit

                                             Vsense
                                                                          V1
                                    EC
                                             0Vdc

                                                                           0Vdc
                                                             U2
                                    V2              DGT20J321_SP          U1
                                                                          GT20J321




                                                       0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                             10
Comparison Graph

Simulation result




Comparison table


                                              VF (V)
               IF(A)                                                        %Error
                              Measurement              Simulation
                         1                0.850                 0.850              0.00
                         2                0.950                 0.947              -0.29
                         5                1.110                 1.115              0.47
                        10                1.300                 1.298              -0.14
                        20                1.560                 1.562              0.12
                        30                1.780                 1.774              -0.33
                        40                1.960                 1.963              0.17




                    All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                           11
Reverse Recovery Characteristics

Circuit Simulation result

              20A


              16A


              12A


                  8A


                  4A


                  0A


              -4A


              -8A
               5.0us      5.2us               5.4us            5.6us               5.8us   6.0us
                   I(Vsense)
                                                      Time



Evaluation circuit

                                              R1      Vsense
                                                                       PARAMETERS:
                            V1 = -300V                                 TR = 0.4u
                                            14.9
                            V2 = 300V

                            TD = 5.15us                                 U1
                                                                        DGT20J321_SP
                            TR = {TR}

                            TF = 10n      V1
                                          VPULSE
                            PW = 10u

                            PER = 1ms

                                                      0




Test condition: VCC=300 (V), IF=20 (A) –di/dt=100 A/usec

       Parameter          Unit          Measurement              Simulation                 %Error
            trr            ns                  110.000                      109.974                -0.024
            Irr             A                      4.300                           4.309           0.207



                       All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                                            12

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SPICE MODEL of GT20J321 (Professional+FWD+SP PSpice Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: GT20J321 MANUFACTURER: TOSHIBA * REMARK: Free-Wheeling Diode Special Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
  • 2. Circuit Configuration Collector Gate Emitter All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
  • 3. Transfer Characteristics Circuit Simulation result 40A 30A 20A 10A 0A 0V 4V 8V 12V 16V 20V I(U1:C) V_VGE Evaluation circuit U2 DGT20J321_SP VCE 5Vdc VGE U1 15Vdc GT20J321 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
  • 4. Comparison Graph Simulation result Comparison table Test condition: VCE =5 (V) VGE (V) IC (A) %Error Measurement Simulation 1 6.300 6.355 0.87 2 6.600 6.551 -0.75 5 7.000 6.953 -0.68 10 7.450 7.427 -0.31 20 8.100 8.138 0.47 30 8.650 8.716 0.76 40 9.200 9.226 0.28 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
  • 5. Fall Time Characteristics Circuit Simulation result 400V 300V 200V 100V 0V V(U1:C) 20V SEL>> 0V V(U1:G) 24A 16A 8A 0A 9.4us 9.8us 10.2us 10.6us 11.0us 11.4us I(U1:C) Time Evaluation circuit D2 RG2 DGT20J321 -VGE 15Vdc33 U2 L1 GT20J321 20mH 2 1 IC = 20 VCE 300 D1 Rg DGT20J321 V1 = 0 V2 = 15 TD = 5u V1 33 TR = 10n U1 TF = 10n GT20J321 PW = 4.998u PER = 100u 0 Test condition: IC=20 (A), VCC=300 (V), VGE=15 (V), RG=33(Ω) Parameter Unit Measurement Simulation %Error tf us 0.040 0.040 0.000 tdoff us 0.240 0.244 1.822 toff us 0.340 0.347 2.086 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
  • 6. Gate Charge Characteristics Circuit Simulation result 20V 16V 12V 8V 4V 0V 0 20n 40n 60n 80n 100n 120n 140n V(W1:1) Time*1mA Evaluation circuit V2 0 IC U2 D2 DGT20J321_SPDbreak 20 I1 = 0 I2 = 1m W1 W TF = 10n + IOFF = 100uA U1 VCC TR = 10n ION = 0A GT20J321 TD = 0 I2 - 300 PER = 700m PW = 7m 0 Test condition: VCC=300 (V), IC=20 (A), VGE=15 (V) Parameter Unit Measurement Simulation %Error Qge nc 22.000 21.858 -0.645 Qgc nc 38.000 37.195 -2.118 Qg nc 105.000 106.576 1.501 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
  • 7. Saturation Characteristics Circuit Simulation result 40A 30A 20A 10A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(IC) V(IC:-) Evaluation circuit U2 DGT20J321_SP IC 0Adc VGE U1 15Vdc GT20J321 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
  • 8. Comparison Graph Simulation result Comparison table Test condition: VGE =15 (V) VCE (V) Ic(A) %Error Measurement Simulation 1 0.950 0.997 4.99 2 1.050 1.086 3.38 5 1.300 1.301 0.10 10 1.600 1.597 -0.18 20 2.050 2.052 0.11 30 2.400 2.398 -0.07 40 2.700 2.700 0.01 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
  • 9. Output Characteristics Circuit Simulation result 40A 20V 15V 9V 30A 20A 8V 10A VGE=7V 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(R1) V_VCE Evaluation circuit R1 0.001m U2 DGT20J321_SP VCE 5Vdc VGE U1 0 GT20J321 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9
  • 10. FWD Forward Current Characteristics Circuit Simulation result 40A 30A 20A 10A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V I(Vsense) V(EC) Evaluation circuit Vsense V1 EC 0Vdc 0Vdc U2 V2 DGT20J321_SP U1 GT20J321 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 10
  • 11. Comparison Graph Simulation result Comparison table VF (V) IF(A) %Error Measurement Simulation 1 0.850 0.850 0.00 2 0.950 0.947 -0.29 5 1.110 1.115 0.47 10 1.300 1.298 -0.14 20 1.560 1.562 0.12 30 1.780 1.774 -0.33 40 1.960 1.963 0.17 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 11
  • 12. Reverse Recovery Characteristics Circuit Simulation result 20A 16A 12A 8A 4A 0A -4A -8A 5.0us 5.2us 5.4us 5.6us 5.8us 6.0us I(Vsense) Time Evaluation circuit R1 Vsense PARAMETERS: V1 = -300V TR = 0.4u 14.9 V2 = 300V TD = 5.15us U1 DGT20J321_SP TR = {TR} TF = 10n V1 VPULSE PW = 10u PER = 1ms 0 Test condition: VCC=300 (V), IF=20 (A) –di/dt=100 A/usec Parameter Unit Measurement Simulation %Error trr ns 110.000 109.974 -0.024 Irr A 4.300 4.309 0.207 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 12