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Device Modeling Report




COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: CM200HA-24H
MANUFACTURER: MITSUBISHI
*REMARK: Free-Wheeling Diode (Professional Model)




                     Bee Technologies Inc.




       All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Transfer Characteristics

Circuit Simulation result


          400A




          320A




          240A




          160A




           80A




            0A
          0.05V              4.00V      8.00V           12.00V      16.00V   20.00V
                   I(U1:C)
                                                V_VGE


Evaluation circuit




                                                                 VCE
                                       U1                        10Vdc
                              VGE      CM200HA-24H
                              15Vdc




                                           0




                  All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Comparison Graph

Circuit Simulation Result


                                      400
                                                      Measurement
                                                      Simulation
         COLLECTOR CURRENT, IC, (A)




                                      320



                                      240



                                      160



                                       80



                                        0
                                            0           4             8        12            16          20

                                                       GATE-EMITTER VOLTAGE, VGE, (V)

Simulation Result


Test condition: VCE = 10 V


                                                                     VGE (V)
                                      IC (A)                                                      Error (%)
                                                      Measurement          Simulation
                                                 10                7.400             7.628              3.08
                                                 20                7.900             7.912              0.15
                                                 50                8.500             8.503              0.03
                                                100                9.250             9.215              -0.37
                                                200            10.400               10.309              -0.88
                                                400            12.000               12.032              0.27




                                         All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Fall Time Characteristics

Circuit Simulation result


               200A




               150A




               100A




                50A




                 0A
                  2us     3us    4us         5us   6us   7us        8us   9us    10us 11us
                        I(RL)
                                                         Time


Evaluation circuit




                                                                                   RL
                                       Rg                      U2                  2.99

                  V1 = 0                                      DCM200HA-24H_P
                  V2 = 15              1.6           U1
                  TD = 0        V1                   CM200HA-24H
                  TR = 10n                                                          VCE
                  TF = 10n                                                          600Vdc
                  PW = 3u
                  PER = 20u

                                                         0




Test condition        IC=200 (A), VCC=600(V)


     Parameter          Unit         Measurement                     Simulation              Error
          tf             ns                        350.000                      351.600         0.457


                  All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Gate Charge Characteristics

Circuit Simulation result

              20V




              16V




              12V




                 8V




                 4V




                 0V
                      0                     0.4u                    0.8u                 1.2u             1.6u
                           V(W1:1)
                                                                  Time*1mA

Evaluation circuit

                                                                                    V2



                                                                                    0

                                                                                                    I1
                                                                               U2          D2
                                                                                           Dbreak   200
                                                                               DCM200HA-24H_P
                          I1 = 0                   W1                 U1
                          I2 = 1m                    +                CM200HA-24H
                          TF = 10n                                                                  V3
                          TR = 10n                   -
                          TD = 0       I2          W
                          PER = 500m               IOFF = 100uA                                     600
                          PW = 5m                  ION = 0A


                                                                           0




Test condition: VCC=600 (V), IC=200(A) ,VGE=15(V)


        Parameter              Unit         Measurement                             Simulation             Error(%)
           Qge                   nc                        360.000                          358.864              -0.316
           Qgc                   nc                        470.000                          460.717              -1.975
            Qg                   nc                      1000.000                         1002.700               0.270


                  All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Saturation Characteristics

Circuit Simulation result

            5.0V




            4.0V




            3.0V




            2.0V




            1.0V




              0V
                   0A             80A       160A          240A        320A        400A
                        V(U1:C)
                                                   I_IC


Evaluation circuit




                                                                    IC
                                                                    0Adc
                                         U1
                                  VGE    CM200HA-24H
                         15Vdc




                                               0




                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Comparison Graph

Circuit Simulation Result


                                                5
                                                           Measurement
         SATURATION VOLTAGE, VCE(sat), (V)




                                                           Simulation
                                                4
               COLLECTOR-EMITTER




                                                3



                                                2



                                                1



                                                0
                                                     0       80          160         240           320          400

                                                                COLLECTOR-CURRE NT, IC, (A)

Simulation Result


Test condition: VGE = 15 V

                                                                   VCE (V)
                                             Ic(A)                                                  Error (%)
                                                          Measurement    Simulation
                                                     30          1.480          1.512                         2.19
                                                     40          1.630          1.597                        -2.05
                                                     80          1.900          1.893                        -0.35
                                                    160             2.350                  2.358             0.34
                                                    240             2.700                  2.707             0.25
                                                    320             3.000                  2.989             -0.36
                                                    400             3.250                  3.254              0.11




                                              All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Output Characteristics

Circuit Simulation result


         400A
                                                                                          12
                           VGE=20         15
                                      V
         320A

                                                                                          11

         240A




                                                                                          10
         160A




                                                                                           9
          80A


                                                                                          8
           0A                                                                             7
                0V               2V              4V               6V                 8V        10V
                     I(U1:C)
                                                          V_VCE


Evaluation circuit




                                                                               VCE
                                                                       10Vdc

                                               U1
                                               CM200HA-24H
                                 VGE
                         15Vdc




                                                      0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Forward Current Characteristic

Circuit Simulation Result

          1.0KA




           100A




            10A
              1.0V        1.5V            2.0V             2.5V           3.0V     3.5V
                  I(Vsense)
                                                   V_VEC


Evaluation Circuit


                                      Vsense


                                       0Vdc



                                                                  U1
                          VEC                                     DCM200HA-24H_P




                                               0




                  All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Comparison Graph

Circuit Simulation Result


                                    1.E+03
                                                    Measurement
                                                    Simulation
         EMITTER CURRENT, IE, (A)




                                    1.E+02




                                    1.E+01
                                             1        1.5           2         2.5           3         3.5

                                                 EMITTER-COLLECTOR VOLTAGE, VEC, (V)

Simulation Result


                                                              VEC(V)
                                    IE(A)                                                       %Error
                                                 Measurement            Simulation
                                         10                 1.110                   1.151             3.73
                                         20                 1.260                   1.320             4.76
                                         50                 1.600                   1.618             1.11
                                        100                 2.000                   1.939            -3.05
                                        200                 2.500                   2.428            -2.89
                                        400                 3.200                   3.250             1.55




                                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
Reverse Recovery Characteristics

Circuit Simulation result

                  300A


                  250A


                  200A


                  150A


                  100A


                   50A


                    0A


                  -50A
                    3.0us                          4.0us                                5.0us                 6.0us
                        I(U3:A)
                                                                       Time

Evaluation circuit

                                                                                        L2
                                                                                    1           2

                                                                                         643n

                                                           U3

                                                           DCM200HA-24H_P



                                                                     IC = 200
                                                                       500uH
                                                                                                    VCE
                                                                 2              1                   600Vdc
                                                                          L1

                                              Rg                U2

                            V1 = -15                           DCM200HA-24H_P
                            V2 = 15           30    U1
                            TD = 1u      V1         CM200HA-24H
                            TR = 10n
                            TF = 10n
                            PW = 24.998u
                            PER = 100u


                                                          0




Test condition: VCC=600 (V), IC=200(A) ,VGE=+15(V)


       Parameter          Unit                Measurement                               Simulation             Error(%)
            trr           nsec                           130.000                                    130.121           0.09
            Irr             A                                 19.000                                 18.335           -3.50


                    All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

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SPICE MODEL of CM200HA-24H (Professional+FWDP Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: CM200HA-24H MANUFACTURER: MITSUBISHI *REMARK: Free-Wheeling Diode (Professional Model) Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 2. Transfer Characteristics Circuit Simulation result 400A 320A 240A 160A 80A 0A 0.05V 4.00V 8.00V 12.00V 16.00V 20.00V I(U1:C) V_VGE Evaluation circuit VCE U1 10Vdc VGE CM200HA-24H 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 3. Comparison Graph Circuit Simulation Result 400 Measurement Simulation COLLECTOR CURRENT, IC, (A) 320 240 160 80 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (V) Simulation Result Test condition: VCE = 10 V VGE (V) IC (A) Error (%) Measurement Simulation 10 7.400 7.628 3.08 20 7.900 7.912 0.15 50 8.500 8.503 0.03 100 9.250 9.215 -0.37 200 10.400 10.309 -0.88 400 12.000 12.032 0.27 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 4. Fall Time Characteristics Circuit Simulation result 200A 150A 100A 50A 0A 2us 3us 4us 5us 6us 7us 8us 9us 10us 11us I(RL) Time Evaluation circuit RL Rg U2 2.99 V1 = 0 DCM200HA-24H_P V2 = 15 1.6 U1 TD = 0 V1 CM200HA-24H TR = 10n VCE TF = 10n 600Vdc PW = 3u PER = 20u 0 Test condition IC=200 (A), VCC=600(V) Parameter Unit Measurement Simulation Error tf ns 350.000 351.600 0.457 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 5. Gate Charge Characteristics Circuit Simulation result 20V 16V 12V 8V 4V 0V 0 0.4u 0.8u 1.2u 1.6u V(W1:1) Time*1mA Evaluation circuit V2 0 I1 U2 D2 Dbreak 200 DCM200HA-24H_P I1 = 0 W1 U1 I2 = 1m + CM200HA-24H TF = 10n V3 TR = 10n - TD = 0 I2 W PER = 500m IOFF = 100uA 600 PW = 5m ION = 0A 0 Test condition: VCC=600 (V), IC=200(A) ,VGE=15(V) Parameter Unit Measurement Simulation Error(%) Qge nc 360.000 358.864 -0.316 Qgc nc 470.000 460.717 -1.975 Qg nc 1000.000 1002.700 0.270 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 6. Saturation Characteristics Circuit Simulation result 5.0V 4.0V 3.0V 2.0V 1.0V 0V 0A 80A 160A 240A 320A 400A V(U1:C) I_IC Evaluation circuit IC 0Adc U1 VGE CM200HA-24H 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 7. Comparison Graph Circuit Simulation Result 5 Measurement SATURATION VOLTAGE, VCE(sat), (V) Simulation 4 COLLECTOR-EMITTER 3 2 1 0 0 80 160 240 320 400 COLLECTOR-CURRE NT, IC, (A) Simulation Result Test condition: VGE = 15 V VCE (V) Ic(A) Error (%) Measurement Simulation 30 1.480 1.512 2.19 40 1.630 1.597 -2.05 80 1.900 1.893 -0.35 160 2.350 2.358 0.34 240 2.700 2.707 0.25 320 3.000 2.989 -0.36 400 3.250 3.254 0.11 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 8. Output Characteristics Circuit Simulation result 400A 12 VGE=20 15 V 320A 11 240A 10 160A 9 80A 8 0A 7 0V 2V 4V 6V 8V 10V I(U1:C) V_VCE Evaluation circuit VCE 10Vdc U1 CM200HA-24H VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 9. Forward Current Characteristic Circuit Simulation Result 1.0KA 100A 10A 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V I(Vsense) V_VEC Evaluation Circuit Vsense 0Vdc U1 VEC DCM200HA-24H_P 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 10. Comparison Graph Circuit Simulation Result 1.E+03 Measurement Simulation EMITTER CURRENT, IE, (A) 1.E+02 1.E+01 1 1.5 2 2.5 3 3.5 EMITTER-COLLECTOR VOLTAGE, VEC, (V) Simulation Result VEC(V) IE(A) %Error Measurement Simulation 10 1.110 1.151 3.73 20 1.260 1.320 4.76 50 1.600 1.618 1.11 100 2.000 1.939 -3.05 200 2.500 2.428 -2.89 400 3.200 3.250 1.55 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
  • 11. Reverse Recovery Characteristics Circuit Simulation result 300A 250A 200A 150A 100A 50A 0A -50A 3.0us 4.0us 5.0us 6.0us I(U3:A) Time Evaluation circuit L2 1 2 643n U3 DCM200HA-24H_P IC = 200 500uH VCE 2 1 600Vdc L1 Rg U2 V1 = -15 DCM200HA-24H_P V2 = 15 30 U1 TD = 1u V1 CM200HA-24H TR = 10n TF = 10n PW = 24.998u PER = 100u 0 Test condition: VCC=600 (V), IC=200(A) ,VGE=+15(V) Parameter Unit Measurement Simulation Error(%) trr nsec 130.000 130.121 0.09 Irr A 19.000 18.335 -3.50 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009