The document provides a detailed device modeling report for the Mitsubishi insulated gate bipolar transistor (IGBT) part number CM200HA-24H, including component specifications, circuit simulation results, and performance characteristics such as transfer, saturation, output, and reverse recovery. It features evaluation circuits, error analysis, and comparisons between measurement and simulation outcomes across various test conditions. Copyright information is included, indicating the document is by Bee Technologies Inc. from 2009.

1. Device Modeling Report
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: CM200HA-24H
MANUFACTURER: MITSUBISHI
*REMARK: Free-Wheeling Diode (Professional Model)
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

2. Transfer Characteristics
Circuit Simulation result
400A
320A
240A
160A
80A
0A
0.05V 4.00V 8.00V 12.00V 16.00V 20.00V
I(U1:C)
V_VGE
Evaluation circuit
VCE
U1 10Vdc
VGE CM200HA-24H
15Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

3. Comparison Graph
Circuit Simulation Result
400
Measurement
Simulation
COLLECTOR CURRENT, IC, (A)
320
240
160
80
0
0 4 8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (V)
Simulation Result
Test condition: VCE = 10 V
VGE (V)
IC (A) Error (%)
Measurement Simulation
10 7.400 7.628 3.08
20 7.900 7.912 0.15
50 8.500 8.503 0.03
100 9.250 9.215 -0.37
200 10.400 10.309 -0.88
400 12.000 12.032 0.27
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

4. Fall Time Characteristics
Circuit Simulation result
200A
150A
100A
50A
0A
2us 3us 4us 5us 6us 7us 8us 9us 10us 11us
I(RL)
Time
Evaluation circuit
RL
Rg U2 2.99
V1 = 0 DCM200HA-24H_P
V2 = 15 1.6 U1
TD = 0 V1 CM200HA-24H
TR = 10n VCE
TF = 10n 600Vdc
PW = 3u
PER = 20u
0
Test condition IC=200 (A), VCC=600(V)
Parameter Unit Measurement Simulation Error
tf ns 350.000 351.600 0.457
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

5. Gate Charge Characteristics
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 0.4u 0.8u 1.2u 1.6u
V(W1:1)
Time*1mA
Evaluation circuit
V2
0
I1
U2 D2
Dbreak 200
DCM200HA-24H_P
I1 = 0 W1 U1
I2 = 1m + CM200HA-24H
TF = 10n V3
TR = 10n -
TD = 0 I2 W
PER = 500m IOFF = 100uA 600
PW = 5m ION = 0A
0
Test condition: VCC=600 (V), IC=200(A) ,VGE=15(V)
Parameter Unit Measurement Simulation Error(%)
Qge nc 360.000 358.864 -0.316
Qgc nc 470.000 460.717 -1.975
Qg nc 1000.000 1002.700 0.270
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

6. Saturation Characteristics
Circuit Simulation result
5.0V
4.0V
3.0V
2.0V
1.0V
0V
0A 80A 160A 240A 320A 400A
V(U1:C)
I_IC
Evaluation circuit
IC
0Adc
U1
VGE CM200HA-24H
15Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

7. Comparison Graph
Circuit Simulation Result
5
Measurement
SATURATION VOLTAGE, VCE(sat), (V)
Simulation
4
COLLECTOR-EMITTER
3
2
1
0
0 80 160 240 320 400
COLLECTOR-CURRE NT, IC, (A)
Simulation Result
Test condition: VGE = 15 V
VCE (V)
Ic(A) Error (%)
Measurement Simulation
30 1.480 1.512 2.19
40 1.630 1.597 -2.05
80 1.900 1.893 -0.35
160 2.350 2.358 0.34
240 2.700 2.707 0.25
320 3.000 2.989 -0.36
400 3.250 3.254 0.11
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

8. Output Characteristics
Circuit Simulation result
400A
12
VGE=20 15
V
320A
11
240A
10
160A
9
80A
8
0A 7
0V 2V 4V 6V 8V 10V
I(U1:C)
V_VCE
Evaluation circuit
VCE
10Vdc
U1
CM200HA-24H
VGE
15Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

9. Forward Current Characteristic
Circuit Simulation Result
1.0KA
100A
10A
1.0V 1.5V 2.0V 2.5V 3.0V 3.5V
I(Vsense)
V_VEC
Evaluation Circuit
Vsense
0Vdc
U1
VEC DCM200HA-24H_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

10. Comparison Graph
Circuit Simulation Result
1.E+03
Measurement
Simulation
EMITTER CURRENT, IE, (A)
1.E+02
1.E+01
1 1.5 2 2.5 3 3.5
EMITTER-COLLECTOR VOLTAGE, VEC, (V)
Simulation Result
VEC(V)
IE(A) %Error
Measurement Simulation
10 1.110 1.151 3.73
20 1.260 1.320 4.76
50 1.600 1.618 1.11
100 2.000 1.939 -3.05
200 2.500 2.428 -2.89
400 3.200 3.250 1.55
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

11. Reverse Recovery Characteristics
Circuit Simulation result
300A
250A
200A
150A
100A
50A
0A
-50A
3.0us 4.0us 5.0us 6.0us
I(U3:A)
Time
Evaluation circuit
L2
1 2
643n
U3
DCM200HA-24H_P
IC = 200
500uH
VCE
2 1 600Vdc
L1
Rg U2
V1 = -15 DCM200HA-24H_P
V2 = 15 30 U1
TD = 1u V1 CM200HA-24H
TR = 10n
TF = 10n
PW = 24.998u
PER = 100u
0
Test condition: VCC=600 (V), IC=200(A) ,VGE=+15(V)
Parameter Unit Measurement Simulation Error(%)
trr nsec 130.000 130.121 0.09
Irr A 19.000 18.335 -3.50
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009