SPICE MODEL of GT15M321 (Professional+FWDP LTspice Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: GT15M321
MANUFACTURER: TOSHIBA
*REMARK: Free-Wheeling Diode Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
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3. Transfer Characteristics
Circuit Simulation result
Evaluation circuit
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4. Comparison Graph
Simulation result
Comparison table
Test condition: VCE =5 (V)
VGE (V)
IC (A) %Error
Measurement Simulation
1 4.700 4.755 1.18
2 4.900 4.951 1.05
5 5.350 5.353 0.06
10 5.850 5.828 -0.38
15 6.250 6.207 -0.68
20 6.600 6.538 -0.94
25 6.950 6.838 -1.62
30 7.250 7.115 -1.86
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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5. Fall Time Characteristics
Circuit Simulation result
Time
Evaluation circuit
Test condition: IC=15 (A), VCC=600 (V), VGE=±15 (V), RG=100(Ω)
Parameter Unit Measurement Simulation %Error
tf us 0.200 0.207 3.391
toff us 0.500 0.496 -0.744
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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6. Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VCC=150 (V), IC=15 (A), VGE=15 (V)
Parameter Unit Measurement Simulation %Error
Qge nc 11.000 10.957 -0.391
Qgc nc 27.000 26.783 -0.804
Qg nc 71.000 73.266 3.192
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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7. Saturation Characteristics
Circuit Simulation result
Evaluation circuit
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8. Comparison Graph
Simulation result
Comparison table
Test condition: VGE =15 (V)
VCE (V)
Ic(A) %Error
Measurement Simulation
1 1.350 1.360 0.71
2 1.430 1.425 -0.37
5 1.580 1.570 -0.61
10 1.750 1.750 0.00
15 1.880 1.890 0.52
20 2.010 2.013 0.13
25 2.150 2.138 -0.55
30 2.280 2.285 0.21
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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9. Output Characteristics
Circuit Simulation result
20V 15V
10V 8V
VGE=7V
Evaluation circuit
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10. FWD Forward Current Characteristics
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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11. Comparison Graph
Simulation result
Comparison table
VF (V)
IF(A) %Error
Measurement Simulation
1 0.800 0.799 -0.11
2 0.850 0.852 0.27
5 0.940 0.942 0.22
10 1.040 1.034 -0.54
20 1.170 1.169 -0.06
50 1.485 1.490 0.32
100 1.965 1.963 -0.09
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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12. Reverse Recovery Characteristics
Circuit Simulation result
Time
Evaluation circuit
Test condition: VCC=600 (V), IF=15 (A) –di/dt=20 A/usec
Parameter Unit Measurement Simulation %Error
trr us 0.700 0.699 -0.130
Irr A 9.500 9.413 -0.921
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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