CNTFET, FinFET and MESFET

CNTFET, FinFET and MESFET
Md. Rakibul Karim Akanda
University of California Riverside, California, USA

M. R. K. Akanda and Q. D. M. Khosru, "FEM Model of Wraparound CNTFET With Multi-CNT and Its Capacitance
Modeling," in IEEE Transactions on Electron Devices, vol. 60, no. 1, pp. 97-102, Jan. 2013.
doi: 10.1109/TED.2012.2227968
Fig. 1. Schematic cross-sectional view of the wraparound gate multi-CNTchannel FET.
Finite Element Model of Wraparound CNTFET Using Comsol

doi: 10.1109/TED.2012.2227968
Fig. 2. Approximate cross-sectional view of the CNTFET with gate-tochannel capacitance for the end CNT
channel (Cgc,e) and the middle CNT channel (Cgc,m).

doi: 10.1109/TED.2012.2227968
Fig. 3. Conceptual representation of the wraparound gate CNTFET illustrating
the image charge distribution of the CNT channel.

doi: 10.1109/TED.2012.2227968
Fig. 4. Schematic of screening effect due to parallel conducting channels in
the wraparound CNTFET with multi-CNT channels.

doi: 10.1109/TED.2012.2227968
Fig. 5. Schematic presentation of fringing capacitance and associated device parameters of the CNTFET.

doi: 10.1109/TED.2012.2227968
Fig. 6. Conceptual illustration of gate-to-drain/source capacitance of the CNTFET.

doi: 10.1109/TED.2012.2227968
Fig. 7. Model of the CNTFET with multi-CNT channels created by COMSOL and used in 3-D simulation.

doi: 10.1109/TED.2012.2227968
Fig. 8. Variation of voltage in the wraparound gate CNTFET with multi-CNT having 25-nm pitch as
obtained from 3-D simulation using the FEM.

doi: 10.1109/TED.2012.2227968
Fig. 9. Three-dimensional simulation result of voltage variation in the CNTFET
having 15-nm pitch using FEM.

doi: 10.1109/TED.2012.2227968
Fig. 10. Gate-to-channel capacitance of end CNT for a different gate dielectric.
The proposed FEM model is in excellent agreement with the analytical model.

doi: 10.1109/TED.2012.2227968
Fig. 11. Gate-to-channel capacitance of mid CNT for a different gate dielectric.
The proposed FEM model is in excellent agreement with the analytical model.

doi: 10.1109/TED.2012.2227968
Fig. 12. Gate-to-channel capacitance of end CNT as a function of pitch. Improvement over the
top-gate device and agreement between the FEM and analytical models is apparent.

doi: 10.1109/TED.2012.2227968
Fig. 13. Gate-to-channel capacitance of mid CNT as a function of pitch. Improvement
over the top-gate device and agreement between the FEM and analytical models is apparent.

doi: 10.1109/TED.2012.2227968
Fig. 14. Variation of gate outer fringe capacitance of end CNT with S/D
extension length.

doi: 10.1109/TED.2012.2227968
Fig. 15. Variation of gate outer fringe capacitance of mid CNT with S/D
extension length.

doi: 10.1109/TED.2012.2227968
Fig. 16. Variation of gate-to-S/D capacitance with S/D extension length.

M. R. K. Akanda and Q. D. M. Khosru, "Analysis of output transconductance of FinFETs incorporating quantum mechanical and
temperature effects with 3D temperature distribution," 2011 International Semiconductor Device Research Symposium (ISDRS),
College Park, MD, 2011, pp. 1-2.
doi: 10.1109/ISDRS.2011.6135292
FinFET Transconductance Including Temperature and Quantum Mechanical Effect

M. R. K. Akanda, R. Islam and Q. D. M. Khosru, "A physically based compact model for FinFETs on-resistance incorporating quantum
mechanical effects," International Conference on Electrical & Computer Engineering (ICECE 2010), Dhaka, 2010, pp. 203-205.
doi: 10.1109/ICELCE.2010.5700663
Fig. 18. Different planes (A and B) for contact
resistance
Fig. 17. Different parts of on resistance in FinFET
FinFET On-Resistance

M. S. Islam and M. R. K. Akanda, "3D temperature distribution of SiC MESFET using Green's function," International Conference
on Electrical & Computer Engineering (ICECE 2010), Dhaka, 2010, pp. 13-16.
doi: 10.1109/ICELCE.2010.5700541
Fig. 19. Cross section of SiC MESFET (side view) Fig. 20. Mobility versus temperature curve
Temperature Effect in SiC MESEFET

M. S. Islam, M. R. K. Akanda, S. Anwar and A. Shahriar, "Analysis of resistances and transconductance of SiC MESFET considering
fabrication parameters and mobility as a function of temperature," International Conference on Electrical & Computer Engineering
(ICECE 2010), Dhaka, 2010, pp. 5-8.
doi: 10.1109/ICELCE.2010.5700539
Fig. 21. Specific on-resistance (approximated) versus channel
doping concentration without considering (Dashed Line) and
considering (solid line) temperature effect
Fig. 22. The I-V Characteristics of 4H-SiC
MESFET with W=150 mm and L=1mm at T=300K
for Ideal condition (Solid Line), Channel Length
Modulation Effect (Dash Dot Line) and Self
Heating effect (Dashed Line)
Change in Mobility and Resistance of SiC MESFET with Temperature and Doping

M. S. Islam, M. R. K. Akanda, S. Anwar and A. Shahriar, "Analysis of resistances and transconductance of SiC MESFET considering
fabrication parameters and mobility as a function of temperature," International Conference on Electrical & Computer Engineering
(ICECE 2010), Dhaka, 2010, pp. 5-8.
doi: 10.1109/ICELCE.2010.5700539
Fig. 23. The Drain to source resistance, Rds versus Drain
voltage Vds at T=300K for Ideal condition (Solid Line),
Channel Length Modulation Effect (Dash Dot Line) and Self
Heating effect (Dashed Line)
Fig. 24. The Source-Drain Resistance for
different Physical and fabrication
parameters for T=300K (Dashed Line) and
T=340K (Solid Line)
Change in Mobility and Resistance of SiC MESFET with Temperature and Doping

CNTFET, FinFET and MESFET

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