A Planar Magic-T Structure Using Substrate Integrated Circuits Concept and Its Mixer Applications

72 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 59, NO. 1, JANUARY 2011
A Planar Magic-T Structure Using Substrate
Integrated Circuits Concept and
Its Mixer Applications
Fan Fan He, Ke Wu, Fellow, IEEE, Wei Hong, Senior Member, IEEE,
Liang Han, Student Member, IEEE, and Xiaoping Chen
Abstract—In this paper, a planar 180 phase-reversal T-junc-
tion and a modified magic-T using substrate integrated waveguide
(SIW) and slotline are proposed and developed for RF/microwave
applications on the basis of the substrate integrated circuits con-
cept. In this case, slotline is used to generate the odd-symmetric
field pattern of the SIW in the phase-reverse T-junction. Measured
results indicate that 0.3-dB amplitude imbalance and 3 phase
imbalance can be achieved for the proposed 180 phase-reversal
T-junction over the entire -band. The modified narrowband
and optimized wideband magic-T are developed and fabricated,
respectively. Measured results of all those circuits agree well with
their simulated ones. Finally, as an application demonstration
of our proposed magic-T, a singly balanced mixer based on this
structure is designed and measured with good performances.
Index Terms—Magic-T, 180 phase-reverse T-junction, slotline,
substrate integrated circuits (SICs), substrate integrated wave-
guide (SIW).
I. INTRODUCTION
ASLOTINE presents advantages in the design of mi-
crowave and millimeter-wave integrated circuits, espe-
cially when solid-state active devices are involved. Recently,
the substrate integrated circuits (SICs) concept, involving the
substrate integrated waveguide (SIW) technique and other
synthesized nonplanar structures in planar form with planar
circuits, has been demonstrated as a very promising scheme for
low-cost, small size, relatively high power, low radiation loss,
and high-density integrated microwave and millimeter-wave
Manuscript received December 22, 2009; revised May 21, 2010; accepted
September 08, 2010. Date of publication December 03, 2010; date of current
version January 12, 2011. This work was supported in part by the Natural Sci-
ences and Engineering Research Council of Canada (NSERC), in part by the
National 973 Project of China under Grant 2010CB327400 and in part by the
National Nature Science Foundation of China (NSFC) under Grant 60921063.
F. F. He is with the Poly-Grames Research Center, Department of Electrical
Engineering, École Polytechnique de Montreal, Montreal, QC, Canada H3C
3A7, and also with the State Key Laboraotry of Millimeter Waves, College of
Information Science and Engineering, Southeast University, Nanjing 210096,
China (e-mail: fanfan.he@polymtl.ca).
K. Wu, L. Han, and X. Chen are with the Poly-Grames Research Center, De-
partment of Electrical Engineering, École Polytechnique de Montreal, Montreal,
QC, Canada H3C 3A7 (e-mail: ke.wu@ieee.org).
W. Hong is with the State Key Laboratory of Millimeter Waves, College of
Information Science and Engineering, Southeast University, Nanjing 210096,
China (e-mail: weihong@seu.edu.cn).
Color versions of one or more of the figures in this paper are available online
at http://ieeexplore.ieee.org.
Digital Object Identifier 10.1109/TMTT.2010.2091195
components and systems [1]–[6]. Alternatively named inte-
grated waveguide structures of the SIW, such as laminated
waveguide or post-wall waveguide, can be found in [7] and [8].
The transitions from the SIW to slotline [9] have already been
investigated theoretically and experimentally, which provide a
design base to integrate SIW circuits with slotline circuits.
As a fundamental and important component, the magic-T has
widely been used in microwave and millimeter-wave circuits
such as balanced mixers, power combiners or dividers, balance
amplifiers, frequency discriminators, and feeding networks of
antenna array [10], [11]. Following intensive investigations
of SIW components and systems in the past ten years, more
and more attention is being paid to integrate the conventional
magic-T based on SIW technology. Some SIW-based magic-T
structures have been proposed and studied [9], [12], [13].
In [12] and [13], magic-T techniques were developed using
multilayer low-temperature co-fired ceramic (LTCC) or printed
circuit board (PCB) processes. An SIW planar magic-T was
successfully designed with relatively narrowband character-
istics in [9]. This magic-T consisting of an SIW T-junction,
a slotline T-junction, and two phase-reverse slotline-to-SIW
T-junctions, and it has an 8% bandwidth centered at 9 GHz with
0.2-dB amplitude and 1.5 phase imbalances. In this paper, a
modified version of a planar SIW magic-T, which only consists
of a phase-reverse slotline-to-SIW T-junction and an -plane
SIW T-junction, is proposed and presented, as shown in Fig. 1,
which has smaller size and wider bandwidth than its previous
version [9].
Described in Section II are the analysis and discussions of the
proposed 180 phase-reversal slotline-to-SIW T-junction with
its simulated and measured results. In Section III, the modified
planar magic-T structures with direct design and with further
optimization are discussed with their transmission line models.
Measured results agree with simulated results very well. Ad-
ditional wideband slotline-to-microstrip and SIW-to-microstrip
transitions are designed for port-to-port measurements of mi-
crostrip line in support of experimental characterization of the
proposed structures. In the end, a singly balanced mixer based
on our modified wideband magic-T is developed. All the struc-
tures in this paper are simulated with means of the full-wave
simulation tool Ansoft HFSS, designed and fabricated on an
RT/Duroid 6010 substrate with a dielectric constant of 10.2 and
a thickness of 0.635 mm.
0018-9480/$26.00 © 2010 IEEE

HE et al.: PLANAR MAGIC-T STRUCTURE USING SICs CONCEPT AND ITS MIXER APPLICATIONS 73
Fig. 1. Physical 3-D configurations of the modified magic-T.
II. PHASE-REVERSAL SLOTLINE-TO-SIW T-JUNCTION
Here, the slotline-to-SIW T-junction acts as a mode converter
between the slotline and SIW. Fig. 2(a) depicts the physical 3-D
configuration of the slotline-to-SIW T-junction, where is
the width of metallic slot, is the SIW width, and
is the slotline width. The yellow (in online version) and dark
layers are the top metal cover and bottom metal cover. The light
gray area means substrate. The slotline and SIW structures in-
tersect with each other in which the slotline extends length
into the metallic cover of the SIW with a short-circuited termina-
tion. Two via-posts with the diameter of are used to optimize
the return loss of the T-junction. Fig. 2(b) shows the cross sec-
tion at the A–A plane, where the orientation of electric fields
is sketched. When the signal is coupled from the slotline into
the SIW at the A–A plane, the electric fields of the slotline
mode are converted to those of the half-mode SIW (or HMSIW)
mode [14] because of overlapped metallic covers on the top and
bottom of the SIW. As such, two phase-reverse waves come out
of ports P2 and P3.
Fig. 2(c) shows the equivalent circuit model of the T-junction.
The model is similar to that of an -plane waveguide T-junc-
tion due to their similar electric field conversion. and are
the characteristic admittances of the slotline and HMSIW, re-
spectively. In the equivalent circuit, is used instead of the
SIW characteristic admittance because both of them have al-
most the same value. Based on the above principle, parameters
, , and are mainly dependent on slotline’s length
, width , and at the slotline port (port 1), and
mainly depends on the SIW width . Therefore, the rela-
tionship between parameters of the equivalent circuit and return
loss at port 1 is replaced by that between parameters of phys-
ical configuration and return loss at port 1. In order to minimize
any potential radiation loss while transmitting signal from the
slotline to the SIW, a possible minimum width of the slot line is
chosen as mm.
Fig. 2. (a) Physical description and parameters of the slotline-to-SIW T-junc-
tion. W = 0:2 mm, W = 7:3 mm, D = 0:6 mm, L = 4:6 mm,
L = 4 mm, and W = 8 mm. (b) Electric field distribution at cross section
A–A plane. (c) Equivalent circuit for the slotline-to-SIW T-junction.
Fig. 3 shows simulated and measured frequency responses of
power dividing and return loss of the 180 phase-reversal slot-
line-to-SIW T-junction. The imbalance in amplitude and phase
are, respectively, 0.3 dB and 3 , as shown in Fig. 4. These results
suggest that the junction has broadband characteristics. Fig. 5
presents a photograph of the T-junction.
III. MODIFIED PLANAR SLOTLINE-TO-SIW MAGIC-T
A. Magic-T Circuit Configuration and Operating Principle
Fig. 1 describes the physical 3-D configuration of the pro-
posed magic-T. The yellow (in online version) and dark layers
are the top metal cover and bottom metal cover. The light gray
area means substrate. The orange areas (in online version)
are metallic slots for the SIW. This magic-T consists of an
SIW -plane T-junction and a slotline-to-SIW T-junction.
Two such T-junctions share the two common arms with 45
rotation. Metallic vias V1 and V2 with diameter are used to
construct the SIW -plane T-junction. Ports 1 ( port) and 4
( port) are sum and difference ports, respectively, while ports
2 and 3 are the power dividing arms. Without the microstrip
line-to-SIW and slotline-to-microstrip line transitions, the size
of the magic-T is about 20 mm 20 mm. A signal applied to

Fig. 3. Simulated and measured frequency responses of power dividing and
return loss for the 180 slotline-to-SIW T-junction.
Fig. 4. Measured amplitude and phase imbalances of the slotline-to-SIW
T-junction.
Fig. 5 Photograph of the slotline-to-SIW T-junction. Left and right figures are
the top view and bottom view, respectively.
port 1 is split into two in-phase components by metallic via V1.
The two components cancel each other at the slotline, while
port 4 is isolated. In this case, the four-port junction works
as an SIW -plane T-junction and the symmetrical plane
A–B becomes a virtual open plane. Otherwise, the four-port
junction works as a slotline-to-SIW T-junction and the plane
A–B becomes a virtual ground plane when a signal is applied
to port 4. The input signal is naturally split into two equal and
out-of-phase signals at ports 2 and 3, and port 1 is isolated in
this case.
Fig. 6. Corresponding equivalent circuit of the magic-T.
Fig. 7. Simplified equivalent circuits of the magic-T. (a) In-phase. (b) Out-of-
phase.
The operating principle of the modified magic-T can
also be well explained by its corresponding equivalent cir-
cuit at the working frequency shown in Fig. 6, where the
slot-to-SIW T-junction can be seen as an ideal transformer
and the SIW -plane T-junction as a divider. Parameters
, , , and stand for the characteristic
impedances, slotline, ground slotline, HMSIW, and SIW, re-
spectively. In the in-phase case, the equivalent circuit model
will further be simplified as depicted in Fig. 7(a), when
at the working frequency. In
the out-of-phase case, the simplified equivalent is shown in
Fig. 7(b), where . On the basis of the above dis-
cussion, distances and should depend on the positions
of the three metallic vias in the magic-T circuit.
B. Implementation and Results
Based on the above-stated principle, two magic-T struc-
tures are designed and fabricated on an RT/Duroid 6010LM

Fig. 8. Photograph of the modified magic-T. Left and right figures are the top
view and bottom view, respectively.
TABLE I
DIMENSIONS OF THE MODIFIED NARROWBAND MAGIC-T
substrate, respectively, with narrowband and wideband char-
acteristics. Thus, the narrowband and wideband cases of the
magic-T will be discussed separately. Fig. 8 shows the top view
and bottom views of the modified magic-T’s photograph. From
this photograph, we can estimate that the size of the magic-T is
reduced by near 50% with reference to [9].
1) Narrowband Case: The two out-of-phase signals cancel
each other at port 1 as described in Section II-A, and simulta-
neously the distance is equal to a quarter of the guide wave-
length of the SIW at the working frequency. Thus, the working
bandwidth of the return loss at port 4 should be narrow in a sim-
ilar manner to the previous design [9]. However, the working
bandwidth judging from the return loss at port 1 should be wider
because the two in-phase signals cancel each other in the slotline
at port 4. In this demonstration, the magic-T was designed at 9
GHz. All design parameters of the magic-T are listed in Table I.
Fig. 9 shows the return loss and insertion loss of the fabri-
cated narrowband magic-T. is lower than 15 dB from 8.7
to 9.4 GHz with a 7.8% bandwidth, which has validated the
above discussion. Within the frequency range of interest, the
minimum insertion loss is 0.7 dB and it is less than 0.8 dB in
both in-phase and out-of-phase cases. Simulated and measured
isolation characteristics are described in Fig. 10. The isolation
is better than 30 dB between ports 1 and 4, and better than 20 dB
between ports 2 and 3 over the entire frequency range. As shown
in Fig. 11(a) and (b), the maximum phase and amplitude imbal-
ances for both in-phase and out-of-phase cases are less than 1.5
and 0.5 dB, respectively.
2) Wideband Case: The narrowband characteristics of this
magic-T have well been confirmed in the above discussion.
However, an interesting outcome can be observed in that the re-
turn-loss defined bandwidth can be broadened by optimizing the
parameter values of , , , and . When the signal
flows into the SIW from the slotline in this slotline-to-SIW
structure, it would be split into two components and each of
them will propagate along line at the working frequency, as
Fig. 9. Simulated and measured frequency responses of the magic-T. (a) Return
loss. (b) Insertion loss.
Fig. 10. Simulated and measured isolation characteristics of the magic-T.
shown in Fig. 1. Nevertheless, the propagating directions being
different slightly at different frequencies provide a possibility
of broadening the bandwidth of the magic-T. In other words,
it is possible for the magic-T to simultaneously realize ,
and , at two
different frequencies. In our proposed broadband design, these
two frequencies are set at 8.7 and 9.8 GHz. Through optimiza-
tion, some geometrical parameters of magic-T are changed

Fig. 11. Measured results of amplitude and phase imbalance characteristics of
the magic-T. (a) Amplitude. (b) Phase.
such that mm, mm, mm,
and mm.
Fig. 12(a) shows the newly designed magic-T’s simulated and
measured return losses at each port. Among the results, simu-
lated indicates that the above two geometrical conditions
for achieving broadband performances are readily satisﬁed at
8.7 and 9.8 GHz. Measured return loss is better than 15 dB from
8.4 to 10.6 GHz with 23.2% bandwidth. In this broadband fre-
quency range, the insertion loss is less than 0.9 dB and the min-
imum insertion loss is 0.7 dB in both in-phase and out-of-phase
cases, as shown in Fig. 12(b). Measured and simulated isola-
tion curves between port 1 and port 4 or port 2 and port 3 are
plotted in Fig. 13. In addition, the amplitude and phase imbal-
ances of the magic-T are 2 and 0.5 dB, respectively, as shown
in Fig. 14(a) and (b). Measured results of all circuits agree well
with their simulated counterparts.
IV. MODIFIED MAGIC-T’s APPLICATION IN MIXER DESIGN
As a practical and straightforward demonstration of our
modiﬁed magic-T applications, a singly balanced mixer is
designed, as shown in Fig. 15. Fig. 16 shows the photograph
of the practical mixer. An antiparallel pair of series connected
Fig. 12 Simulated and measured frequency responses of the magic-T. (a) Re-
turn loss. (b) Insertion loss.
Fig. 13. Simulated and measured isolation characteristics of the magic-T.
diodes (SMS7630-006LF from Skyworks Inc., Woburn, MA)
is adopted. Generally, a quarter-wavelength short stub in the
matching circuit is need for providing a dc return and good
IF-to-RF and IF-to-local oscillator (LO) isolations. However,
a matching circuit is designed between the diode and SIW
without using a quarter-wavelength short stub because the SIW
is grounded inherently. Two open-circuited stubs on

Fig. 14. Measured results of amplitude and phase imbalance characteristics of
the magic-T. (a) Amplitude. (b) Phase.
Fig. 15. Circuit topology of the proposed mixer.
the right side of the diodes pair are used to provide a terminal
virtual grounding point for LO frequency and RF frequency
simultaneously. In addition, a low-pass filter is designed to
suppress LO and RF signals at IF port. The mixer designed and
simulated by the harmonic balance (HB) method in Agilent
ADS software combined with measured -parameters of the
wideband magic-T structure.
Fig. 17 depicts the measured conversion loss versus LO input
power level when the IF signal is fixed at 1 GHz with an input
power level of 30 dBm and LO frequency is fixed at 10.2 GHz.
When the LO input power level is larger than 13 dBm, the con-
version loss almost is about 7.4 dB. Fig. 18 shows the measured
conversion loss versus IF frequency when the IF signal is swept
Fig. 16. Photograph of the mixer.
Fig. 17. Measured conversion loss versus LO input power.
Fig. 18. Measured conversion loss versus IF frequency.
from 0.1 to 4 GHz (RF is from 10.1 to 6.2 GHz) with a constant
input power level of 30 dBm, and the LO signal is fixed at the
frequency of 10.2 GHz with a 13-dBm power level. The mea-
sured conversion loss is about 8 0.6 dB over the IF frequency
range of 0.1–3 GHz (RF is from 7.2 to 10.1 GHz). Fig. 19
plots the measured conversion loss versus input RF power level,
where RF frequency is set at 9.2 GHz and LO frequency is at
10.2 GHz with a power level of 13 dBm, input RF power level
is swept from 30 to 5 dBm. The output IF power almost in-
creases with the RF power linearly when the RF power level is
less than 3 dBm. On the other hand, when the RF power level
is larger than 0 dBm, the mixer is driven into the nonlinearity
region. From this figure, it can also be seen that the input 1-dB

Fig. 19. Measured IF output power versus RF input power
compression point is around 3 dBm. Moreover, the LO-to-IF
isolation is about 40 dB. All the measurement results dictate
that this mixer is suitable for wideband applications.
V. CONCLUSION
The slotline-to-SIW 180 reversal T-junction with its simple
equivalent circuit model has been presented. The modified SIW
magic-Ts were then developed with narrowband and wideband
cases, respectively. The operating principles and transmission
line models for both cases have also been presented. Good per-
formances related to the insertion loss, isolation, and balance
were observed for our fabricated prototypes designed over the
entire -band. Finally, a singly balanced mixer based on the
modified magic-T was designed to validate the magic-T. Those
novel structures are key components for designing integrated
microwave and millimeter-wave circuits and systems such as
the antenna feed network and mono-pulse radar.
ACKNOWLEDGMENT
The authors would like to thank the Rogers Corporation,
Rogers, CT, for providing the free samples of the RT/Duroid
6010LM substrate and to S. Dubé and A. Traian, both with
the Poly-Grames Research Center, Montreal, QC, Canada, for
the fabrication of the experimental prototypes. The authors
also thank the anonymous reviewers for their comments and
suggestions on this paper.
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Fan Fan He was born in Nanjing, China. He received
the M.S. degree in mechanical–electrical engineering
from Xidian University, Xi’an, China, in 2005, and
is currently working toward the Ph.D. degree in elec-
trical engineering both at Southeast University, Nan-
jing, China, and the École Polytechnique de Mon-
tréal, Montréal, QC, Canada, as an exchange student.
His current research interests include advanced
microwave and millimeter-wave components and
systems.
Ke Wu (M’87–SM’92–F’01) is currently a Professor
of electrical engineering and Tier-I Canada Research
Chair in RF and millimeter-wave engineering with
the École Polytechnique de Montreal, Montreal,
QC, Canada. He also holds the first Cheung Kong
endowed chair professorship (visiting) with South-
east University, the first Sir Yue-Kong Pao chair
professorship (visiting) with Ningbo University,
and an honorary professorship with the Nanjing
University of Science and Technology and the City
University of Hong Kong. He has been the Director
of the Poly-Grames Research Center and the Director of the Center for
Radiofrequency Electronics Research of Quebec (Regroupement stratégique of
FRQNT). He has authored or coauthored over 630 referred papers and a number
of books/book chapters. He holds numerous patents. He has served on the
Editorial/Review Boards of many technical journals, transactions and letters,
as well as scientific encyclopedia as both an editor and guest editor. His current
research interests involve SICs, antenna arrays, advanced computer-aided
design (CAD) and modeling techniques, and development of low-cost RF and
millimeter-wave transceivers and sensors for wireless systems and biomedical
applications. He is also interested in the modeling and design of microwave
photonic circuits and systems.

Dr. Wu is a member of the Electromagnetics Academy, Sigma Xi, and the
URSI. He is a Fellow of the Canadian Academy of Engineering (CAE) and the
Royal Society of Canada (The Canadian Academy of the Sciences and Human-
ities). He has held key positions in and has served on various panels and in-
ternational committees including the chair of Technical Program Committees,
International Steering Committees, and international conferences/symposia. He
will be the general chair of the 2012 IEEE Microwave Theory and Techniques
Society (IEEE MTT-S) International Microwave Symposium (IMS). He is cur-
rently the chair of the joint IEEE chapters of the IEEE MTT-S/Antennas and
Propagation Society (AP-S)/Lasers and Electro-Optics Society (LEOS), Mon-
treal, QC, Canada. He was an elected IEEE MTT-S Administrative Committee
(AdCom) member for 2006–2009. He is the chair of the IEEE MTT-S Transna-
tional Committee. He is an IEEE MTT-S Distinguished Microwave Lecturer
(2009–2011). He was the recipient of many awards and prizes including the
ﬁrst IEEE MTT-S Outstanding Young Engineer Award and the 2004 Fessenden
Medal of the IEEE Canada.
Wei Hong (M’92–SM’07) was born in Hebei
Province, China, on October 24, 1962. He received
the B.S. degree from the Zhenzhou Institute of
Technology, Zhenzhou, China, in 1982, and the
M.S. and Ph.D. degrees from Southeast University,
Nanjing, China, in 1985 and 1988, respectively, all
in radio engineering.
Since 1988, he has been with the State Key Lab-
oratory of Millimeter Waves, Southeast University,
where he is currently a Professor and the Associate
Dean of the Department of Radio Engineering.
In 1993 and from 1995 to 1998, he was a short-term Visiting Scholar with
the University of California at Berkeley and the University of Santa Cruz,
respectively. He has authored or coauthored over 200 technical publications.
He authored Principle and Application of the Method of Lines (Southeast
Univ. Press, 1993, in Chinese) and Domain Decomposition Method for EM
Boundary Value Problems (Sci. Press, 2005, in Chinese). He has been engaged
in numerical methods for electromagnetic problems, millimeter-wave theory
and technology, antennas, electromagnetic scattering and RF technology for
mobile communications, etc.
Prof. Hong is a Senior Member of the China Institute of Electronics (CIE). He
is vice-president of the Microwave Society and Antenna Society of CIE. He has
been a reviewer for many technical journals including the IEEE TRANSACTIONS
ON ANTENNAS AND PROPAGATION and is currently an associate editor for the
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. He was a
two-time recipient of the First-Class Science and Technology Progress Prize
issued by the State Education Commission in 1992 and 1994. He was a recip-
ient of the Fourth-Class National Natural Science Prize in 1991, and the First-
and Third-Class Science and Technology Progress Prize of Jiangsu Province.
He was also the recipient of the Foundations for China Distinguished Young
Investigators and the “Innovation Group” issued by the National Science Foun-
dation of China.
Liang Han (S’07) was born in Nanjing, China. He
received the B.E. (with distinction) and M.S. degrees
from Southeast University, Nanjing, China, in 2004
and 2007, respectively, both in electrical engineering.
He is currently working toward the Ph.D. degree in
electrical engineering at the École Polytechnique de
Montréal, Montréal, QC, Canada.
His current research interests include advanced
CAD and modeling techniques, and development of
multifunctional RF transceivers.
Xiaoping Chen was born in Hubei province, China.
He received the Ph.D. degree in electrical engineering
from the Huazhong University of Science and Tech-
nology, Wuhan, China, in 2003.
From 2003 to 2006, he was a Post-Doctoral
Researcher with the State Key Laboratory of Mil-
limeter-waves, Radio Engineering Department,
Southeast University, Nanjing, China, where he was
involved with the design of advanced microwave
and millimeter-wave components and circuits for
communication systems. In May 2006, he worked
as a Post-Doctoral Research Fellow with the Poly-Grames Research Center,
Department of Electrical Engineering, Ecole Polytechnique (University of
Montréal), Montréal, QC, Canada, where he is currently a Researcher Asso-
ciate. He has authored or coauthored over 30 referred journals and conference
papers and some proprietary research reports. He has been a member of the
Editorial Board of the IET Journal. He holds several patents. His current
research interests are focused on millimeter-wave components, antennas, and
subsystems for radar sensors.
Dr. Chen has been a reviewer for several IEEE publications. He was the re-
cipient of a 2004 China Postdoctoral Fellowship. He was also the recipient of
the 2005 Open Foundation of the State Key Laboratory of Millimeter-waves,
Southeast University.

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