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Elektronische Bauelemente
2SC3199
0.15 A , 50 V
NPN Plastic-Encapsulated Transistor
22-Aug-2013 Rev. E Page 1 of 3
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

Base

Emitter
Collector

RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 High Current Capability
 High DC Current Gain
 Small Package
APPLICATIONS
 Audio Amplifier Applications
 AM Amplifier Applications
CLASSIFICATION OF hFE
Product-Rank 2SC3199-O 2SC3199-Y 2SC3199-GR
Range 70~140 120~240 200~400
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 50 V
Collector to Emitter Voltage VCEO 50 V
Emitter to Base Voltage VEBO 5 V
Collector Current - Continuous IC 150 mA
Collector Power Dissipation PC 400 mW
Thermal Resistance From Junction To Ambient RθJA 312 °C / W
Junction, Storage Temperature TJ, TSTG 150, -55~150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Test Condition
Collector to Base Breakdown Voltage V(BR)CBO 50 - - V IC=0.1mA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO 50 - - V IC=1mA, IB=0
Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=0.1mA, IC=0
Collector Cut – Off Current ICBO - - 0.1 μA VCB=50V, IE=0
Emitter Cut – Off Current IEBO - - 0.1 μA VEB=5V, IC=0
DC Current Gain hFE 70 - 400 VCE=6V, IC=2mA
Collector to Emitter Saturation Voltage VCE(sat) - - 0.25 V IC=100mA, IB=10mA
Collector Output Capacitance Cob - - 3.5 pF VCB=10V, IE=0, f=1MHz
Transition Frequency fT 80 - - MHz VCE=10V, IC=1mA
TO-92S
MillimeterREF.
Min. Max.
A 3.90 4.10
B 3.05 3.25
C 1.42 1.62
D 15.1 15.5
E 2.97 3.27
F 0.66 0.86
G 2.44 2.64
H 1.27 REF.
J 0.36 0.48
K 0.36 0.51
L 45°
Elektronische Bauelemente
2SC3199
0.15 A , 50 V
NPN Plastic-Encapsulated Transistor
22-Aug-2013 Rev. E Page 2 of 3
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
CHARACTERISTIC CURVES
Elektronische Bauelemente
2SC3199
0.15 A , 50 V
NPN Plastic-Encapsulated Transistor
22-Aug-2013 Rev. E Page 3 of 3
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
CHARACTERISTIC CURVES

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Original NPN Transistor 2SC3199 C3199 3199 TO-92 New Secos

  • 1. Elektronische Bauelemente 2SC3199 0.15 A , 50 V NPN Plastic-Encapsulated Transistor 22-Aug-2013 Rev. E Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.  Base  Emitter Collector  RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  High Current Capability  High DC Current Gain  Small Package APPLICATIONS  Audio Amplifier Applications  AM Amplifier Applications CLASSIFICATION OF hFE Product-Rank 2SC3199-O 2SC3199-Y 2SC3199-GR Range 70~140 120~240 200~400 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 150 mA Collector Power Dissipation PC 400 mW Thermal Resistance From Junction To Ambient RθJA 312 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Collector to Base Breakdown Voltage V(BR)CBO 50 - - V IC=0.1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 50 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=0.1mA, IC=0 Collector Cut – Off Current ICBO - - 0.1 μA VCB=50V, IE=0 Emitter Cut – Off Current IEBO - - 0.1 μA VEB=5V, IC=0 DC Current Gain hFE 70 - 400 VCE=6V, IC=2mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.25 V IC=100mA, IB=10mA Collector Output Capacitance Cob - - 3.5 pF VCB=10V, IE=0, f=1MHz Transition Frequency fT 80 - - MHz VCE=10V, IC=1mA TO-92S MillimeterREF. Min. Max. A 3.90 4.10 B 3.05 3.25 C 1.42 1.62 D 15.1 15.5 E 2.97 3.27 F 0.66 0.86 G 2.44 2.64 H 1.27 REF. J 0.36 0.48 K 0.36 0.51 L 45°
  • 2. Elektronische Bauelemente 2SC3199 0.15 A , 50 V NPN Plastic-Encapsulated Transistor 22-Aug-2013 Rev. E Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
  • 3. Elektronische Bauelemente 2SC3199 0.15 A , 50 V NPN Plastic-Encapsulated Transistor 22-Aug-2013 Rev. E Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES