This document provides specifications for the TOSHIBA Transistor 2SC2705. It is an NPN epitaxial transistor intended for audio frequency amplifier applications. Key specifications include a small collector output capacitance of 1.8 pF typical, a high transition frequency of 200 MHz typical, and compatibility with the complementary transistor 2SA1145. The document provides maximum ratings, electrical characteristics, characteristic curves, and packaging information for the 2SC2705 transistor.

1. 2SC2705
2004-07-071
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2705
Audio Frequency Amplifier Applications
• Small collector output capacitance: Cob = 1.8 pF (typ.)
• High transition frequency: fT = 200 MHz (typ.)
• Complementary to 2SA1145.
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 150 V
Collector-emitter voltage VCEO 150 V
Emitter-base voltage VEBO 5 V
Collector current IC 50 mA
Base current IB 5 mA
Collector power dissipation PC 800 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 150 V, IE = 0 ― ― 0.1 µA
Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 0.1 µA
Collector-emitter breakdown voltage V (BR) CEO IC = 1 mA, IB = 0 150 ― ― V
DC current gain
hFE
(Note)
VCE = 5 V, IC = 10 mA 80 ― 240
Collector-emitter saturation voltage VCE (sat) IC = 10 mA, IB = 1 mA ― ― 1.0 V
Base-emitter voltage VBE (sat) VCE = 5 V, IC = 10 mA ― ― 0.8 V
Transition frequency fT VCE = 5 V, IC = 10 mA ― 200 ― MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 1.8 ― pF
Note: hFE classification O: 80 to 160, Y: 120 to 240
Marking
Unit: mm
JEDEC TO-92MOD
JEITA ―
TOSHIBA 2-5J1A
Weight: 0.36 g (typ.)
C2705
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics
indicator
Part No. (or abbreviation code)

2. 2SC2705
2004-07-072
Collector-emittersaturationvoltage
VCE(sat)(V)
Collector-emitter voltage VCE (V)
CollectorcurrentIC(mA)
Base-emitter voltage VBE (V)
CollectorcurrentIC(mA)
Collector current IC (mA)
Collector current IC (mA) Collector-base voltage VCB (V)
CollectoroutputcapacitanceCob(pF)
Collector current IC (mA)
DCcurrentgainhFETransitionfrequencyfT(MHz) IC – VCE IC – VBE
hFE – IC VCE (sat) – IC
fT – IC Cob – VCB
56
0
0
48
40
32
16
2 4 6 8 10 12
Common emitter
Ta = 25°C
0
IB = 0.1 mA
24
8
14 16
0.5
0.4
0.3
0.2
48
0
0
32
16
0.4
Common emitter
VCE = 5 V
Ta = 100°C
0.8
25 −25
1.2 1.6
0.3 3 101 30 50
0.03
0.05
0.1
0.3
0.5
0.01
1
Ta = 100°C
25
−25
Common emitter
IC/IB = 10
0.3 3 101 30 50
30
50
100
300
500
10
1000
Common emitter
VCE = 5 V
Ta = 100°C
25
−25
10.5 3 10 30
500
10
100
300
100
Common emitter
Ta = 25°C
VCE = 10 V
5
50
30
1000
10.5 3 10 30
5
0.3
3
100
1
10
IE = 0
f = 1 MHz
Ta = 25°C
30
0.5

3. 2SC2705
2004-07-073
Ambient temperature Ta (°C)
CollectorpowerdissipationPC(mW)
PC – Ta
200 40 60 100 120
1000
0
200
400
600
80 140 160
800

4. 2SC2705
2004-07-074
• The information contained herein is subject to change without notice.
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responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
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Handbook” etc..
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030619EAA
RESTRICTIONS ON PRODUCT USE