SPICE MODEL of TPC6108 (Professional+BDP Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPC6108
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

MOSFET MODEL

Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Transconductance Characteristic

Circuit Simulation Result

12

11

10

9

8
gfs

7

6

5

4 Measurement
Simulation
3
0 1 2 3 4
- ID - Drain Current - A

Comparison table

gfs
Id(A) Error(%)
Measurement Simulation
-0.500 3.333 3.260 -2.190
-1.000 4.878 4.850 -0.574
-2.000 6.061 6.135 1.221
-4.000 8.000 8.140 1.750


Vgs-Id Characteristic

Circuit Simulation result
-15A

-10A

-5A

0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V1
Evaluation circuit

V3

0Vdc

U1
TPC6108

V2
-10Vdc

V1
-10Vdc

0


Comparison Graph


15
Measurement
BeeTech
MoDech

10
- ID - Drain Current - A

5

0
0.0 1.0 2.0 3.0 4.0 5.0
- VGS - Gate to Source Voltage - V

Simulation Result

-VGS(V)
ID(A) Error (%)
-0.500 1.900 1.930 1.579
-1.000 2.030 2.078 2.365
-2.000 2.250 2.269 0.844
-5.000 2.600 2.669 2.654
-10.000 3.090 3.128 1.230
-15.000 3.550 3.496 -1.521


Rds(on) Characteristic


-2.0A

-1.0A

0A
0V -500mV
I(V3)
V_V2

Evaluation circuit

V3

0Vdc

U1
TPC6108

V2
-10Vdc

V1
-10Vdc

0

Simulation Result

ID=-2.2A, VGS=-10V Measurement Simulation Error (%)
R DS (on) 50.000 m 50.000 m 0.000


Gate Charge Characteristic

-16V

VDD=-24V
-12V

-6.0V
-12V
-8V

-4V

0V
0 4n 8n 12n 16n 20n
V(W1:2)
Time*1ms
Evaluation circuit

V2

0Vdc

D1

TPC6108 I2
Dbreak

-4.5Adc

ION = 0uA
I1 = 0 IOFF = 1m V1
I1 W -24Vdc
I2 = 1m -
TD = 0 +
TR = 10n
TF = 10n W1
PW = 600u
PER = 1000u

0

Simulation Result

VDD=-24V,ID=-4.5A Measurement Simulation Error (%)
,VGS=-10V
Qgs 1.800 nC 1.798 nC -0.111
Qgd 2.500 nC 2.494 nC -0.240
Qg 13.000 nC 13.011 nC 0.085


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(nF)
VDS(V) Error(%)
-0.200 80.000 79.800 -0.250
-0.500 60.000 60.300 0.500
-1.000 47.000 46.550 -0.957
-2.000 35.000 35.030 0.086
-5.000 24.000 23.800 -0.833
-10.000 18.000 17.970 -0.167
-20.000 13.000 12.700 -2.308


Switching Time Characteristic


-14V

-12V

-10V

-8V

-6V

-4V

-2V

0V
1.957us 2.000us 2.050us 2.087us
V(U1:3) V(U1:1)/2
Time
Evaluation circuit

L3
3
30nH
V3
0Vdc

RL
6.8
U1
TPC6108 VDD

R1 L2 -15.05
2

30nH
V1 = 0 4.7
V1 R2
V2 = -20
TD = 5u 4.7
TR = 6n
TF = 6n
PW = 5u
PER = 10u
0 0 0 0

Simulation Result

ID=-2.2A, VDD=-15V
Measurement Simulation Error(%)
VGS=0/10V
ton 12.000 ns 11.996 ns 0.033


Output Characteristic


-10A
-10V
-3.5V
-4.0V
-8A
-4.5V -3.0V

-6A
-2.8V

-4A
-2.6V

-2A -2.4V

VGS=-2.2V

0A
0V -1.0V -2.0V -3.0V -4.0V
I(V3)
V_V2

Evaluation circuit

V3

0Vdc

U1
TPC6108

V2
-10Vdc

V1
-10Vdc

0


Forward Current Characteristic


-100A

-100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

V1
DC = 0
AC = U1
TRAN = TPC6108

0


Comparison Graph


10.00
MoDech
BeeTech
Measurement
Drain reverse current IDR(A)

1.00

0.10
0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60

Source-Drain voltage VSD(V)

Simulation Result

VDS(V) VDS(V)
IDR(A) Measurement Simulation %Error
0.100 0.650 0.649 -0.154
0.200 0.677 0.677 0.000
0.500 0.723 0.722 -0.138
1.000 0.765 0.764 -0.131
2.000 0.815 0.814 -0.123
5.000 0.900 0.900 0.000


Reverse Recovery Characteristic


400mA

0A

-400mA
15.14us 15.18us 15.22us 15.26us 15.30us
I(R1)
Time

Evaluation Circuit

R1

V1 = {-9.5}
50
V2 = {10.6}
U2
TD = 203n
D6108_PRO
V1
TR = 10n

TF = 10n

PW = 15u

PER = 100u

0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
trj 6.400 ns 6.405 ns 0.078
trb 15.200 ns 15.172 ns -0.184
trr 21.800 ns 21.577 ns -1.023


Reverse Recovery Characteristic Reference

Trj=6.4(ns)
Trb=15.2(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


Zener Voltage Characteristic


10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V
I(R1)
V_V1

Evaluation Circuit

OPEN

OPEN
R2

U1 1MEG
TPC6108
0
R1

0.01m

V1
0Vdc

0


Zener Voltage Characteristic Reference


SPICE MODEL of TPC6108 (Professional+BDP Model) in SPICE PARK

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