This document is Device Modeling Report of S3L60 in SPICE PARK.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: S3L60
MANUFACTURER: SHINDENGEN
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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2. SPICE MODEL
*$
* P ART NUMBER: S3L60
* M ANUF ACTURER: SHINDENGEN
* VRRM=600,I0=1.8A
* All Rights Reserved Copyright ( C) Bee Technologies Inc. 2008
.MODEL DS3L60 D
+ IS=390.87E-6
+ N=4.9950
+ RS=37.378E- 3
+ IKF=.99321
+ CJO=116.57E-12
+ M=.45565
+ VJ=.72461
+ ISR=0
+ BV=600
+ IBV=10.000E-6
+ TT=30.783E-9
*$
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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3. DIODE MODEL PARAMETERS
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
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4. Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
0V 0.4V 0.8V 1.2V 1.6V 2.0V 2.4V 2.8V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc D1
DS3L60
0
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5. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.1 0.732 0.727 -0.69
0.2 0.825 0.826 0.12
0.5 0.968 0.975 0.72
1 1.117 1.114 -0.30
2 1.294 1.293 -0.11
5 1.621 1.622 0.08
10 1.985 1.985 -0.02
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6. Capacitance Characteristic
Circuit Simulation Result
200p
100p
10p
2.0p
500mV 1.0V 10V 100V
I(V2)/(600V/1u)
V(N11503)
Evaluation Circuit
V2
0Vdc
V1 = 0 V1
V2 = 600V D1
TD = 0 DS3L60
TR = 1u
TF = 50ns
PW = 5us
PER = 10us
0
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7. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj (pF)
Vrev (V) %Error
Measurement Simulation
0.5 91.820 94.506 2.93
1 78.510 79.309 1.02
2 63.500 64.459 1.51
5 46.100 46.117 0.04
10 33.900 34.803 2.66
20 25.140 25.931 3.15
50 16.800 17.485 4.08
100 12.500 12.958 3.66
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8. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
19.96us 20.00us 20.04us 20.08us 20.12us
I(R1)
Evaluation Circuit Time
R1
50
V1 = -9.1V
V2 = 10.8V
TD = 12ns V1
TR = 10ns D1
TF = 12ns DS3L60
PER = 50us
PW = 20us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 18.00 17.59 -2.29
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9. Reverse Recovery Characteristic Reference
Measurement
Trj =18.00(ns)
Trb= 16.00(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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