The document is a device modeling report for a MOSFET component (TK15A50D) by Bee Technologies, detailing various electrical parameters and characteristics. It includes simulation results and comparisons with measurement data on different performance metrics such as transconductance, output characteristics, and switching times. The report also presents graphs and results on capacitance, forward current, and reverse recovery characteristics of the device.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: TK15A50D
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
3
0
4
8
12
16
0 5 10 15 20
gfs(S)
Drain Current ID (A)
Measurement
Simulation
Transconductance Characteristic
Circuit Simulation Result
Comparison table
Id(A)
gfs (s)
Error (%)
Measurement Simulation
1.0 3.380 3.513 3.93
2.0 4.750 4.897 3.09
5.0 7.350 7.529 2.44
10.0 10.150 10.326 1.73
20.0 13.850 14.004 1.11

4. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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0
V2
20
V1
0Vdc
V3
0Vdc
U1
TK15A50D
V_V1
0V 2V 4V 6V 8V 10V 12V
I(V3)
0A
10A
20A
30A
40A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit

5. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
5
0
10
20
30
40
0 2 4 6 8 10 12
DrainCurrentID(A)
Gate - Source Voltage VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
ID(A)
VGS(V)
Error (%)
Measurement Simulation
1 5.200 5.198 -0.04
2 5.470 5.436 -0.62
5 5.960 5.917 -0.72
10 6.520 6.476 -0.67
20 7.250 7.295 0.62
30 7.885 7.947 0.79
40 8.450 8.513 0.75

6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
6
0
V3
0Vdc
VDS
0Vdc
V1
10
U1
TK15A50D
V_VDS
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(V3)
0A
2.0A
4.0A
6.0A
8.0A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID = 7.5A, VGS = 10V Measurement Simulation Error (%)
RDS (on)  0.240 0.240 0.00

7. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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VDD
400I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n -
+
W1
ION = 0uA
IOFF = 1mA
W
I2
15
0
D2
Dbreak
U1
TK15A50D
Time*1mA
0 10n 20n 30n 40n 50n 60n 70n 80n
V(W1:3)
0V
4V
8V
12V
16V
20V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=400V, ID=15A,
VGS=10V
Measurement Simulation Error (%)
Qgs nC 15.000 14.931 -0.46
Qgd nC 15.000 15.069 0.46
Qg nC 40.000 39.952 -0.12

8. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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Capacitance Characteristic
Simulation Result
VDS (V)
Cbd (pF)
Error (%)
Measurement Simulation
20 278.000 279.000 0.36
40 192.000 193.500 0.78
60 156.250 155.000 -0.80
80 132.500 133.000 0.38
100 118.750 118.000 -0.63
Simulation
Measurement

9. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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0
VDD
200VdcV2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 20
U1
TK15A50D
L2
50nH
R2
50
R1
50
L1
30nH
RL
26
Time
0.6us 0.8us 1.0us 1.2us 1.4us 1.6us
1 V(U1:G) 2 V(U1:D)
0V
2V
4V
6V
8V
10V
12V
1
0V
80V
160V
240V
2
>>
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=7.5A, VDD=200V
VGS=0/10V
Measurement Simulation Error(%)
ton ns 100.000 100.017 0.02

10. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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V2
50
V1
0
0
V3
0Vdc
U1
TK15A50D
V_V2
0V 10V 20V 30V 40V 50V
I(V3)
0A
10A
20A
30A
40A
50A
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS=6V
7.5
6.5
8.510
8
7
9

11. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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VSD
0
U1
TK15A50D
Vsense
0Vdc
V_VSD
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(Vsense)
100mA
1.0A
10A
100A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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0.1
1.0
10.0
100.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
DrainreversecurrentIDR(A)
Source - Drain voltage VSD (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
VSD (V)
%Error
Measurement Simulation
0.1 0.615 0.615 0.00
0.2 0.640 0.638 -0.31
0.5 0.675 0.674 -0.15
1.0 0.705 0.707 0.28
2.0 0.750 0.751 0.13
5.0 0.840 0.838 -0.24
10.0 0.940 0.939 -0.11
20.0 1.100 1.101 0.09

13. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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V1TD = 1.8us
TF = 10ns
PW = 20us
PER = 200us
V1 = -9.45v
TR = 10ns
V2 = 10.65v
R1
50
0
U1
DTK15A50D_P
Time
8.0us 16.0us 24.0us 32.0us 40.0us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj us 0.900 0.891 -1.00
trb us 1.200 1.215 1.25
trr us 2.100 2.106 0.29

14. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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Reverse Recovery Characteristic Reference
Trj= 0.9 (us)
Trb= 1.2 (us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement