SPICE MODEL of TK8A50D (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of TK8A50D (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of TK8A50D (Standard+BDS Model) in SPICE PARK
- 1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: MOSFET (Model Parameters) PART NUMBER: TK8A50D MANUFACTURER: TOSHIBA REMARK: Body Diode (Model Parameters)
- 2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 2 MOSFET MODEL PSpice model parameter Model description LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility
- 3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 3 0 2 4 6 8 0 2 4 6 8 10 gfs(S) Drain Current ID (A) Measurement Simulation Transconductance Characteristic Circuit Simulation Result Comparison table Id(A) gfs (s) Error (%) Measurement Simulation 1.0 1.850 1.923 3.946 2.0 2.640 2.698 2.197 5.0 4.170 4.200 0.724 10.0 5.825 5.838 0.223
- 4. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 4 V1 0Vdc V2 20 0 V3 0Vdc U1 TK8A50D V_V1 0V 2V 4V 6V 8V 10V 12V I(V3) 0A 2A 4A 6A 8A 10A 12A 14A Vgs-Id Characteristic Circuit Simulation result Evaluation circuit
- 5. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 5 0 4 8 12 0 2 4 6 8 10 12 DrainCurrentID(A) Gate - Source Voltage VGS (V) Measurement Simulation Comparison Graph Circuit Simulation Result Simulation Result ID(A) VGS(V) Error (%) Measurement Simulation 1 6.000 6.021 0.35 2 6.450 6.453 0.05 4 7.100 7.071 -0.41 6 7.587 7.549 -0.50 8 7.970 7.956 -0.18 10 8.335 8.316 -0.23 12 8.625 8.644 0.22 14 8.925 8.947 0.25
- 6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 6 0 V3 0Vdc VDS 0Vdc V1 10 U1 TK8A50D V_VDS 0V 1.0V 2.0V 2.8V I(V3) 0A 1.0A 2.0A 3.0A 4.0A Rds(on) Characteristic Circuit Simulation result Evaluation circuit Simulation Result ID = 4A, VGS = 10V Measurement Simulation Error (%) RDS (on) 0.700 0.7002 0.03
- 7. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 7 VDD 400I1TD = 0 TF = 5n PW = 600u PER = 1000u I1 = 0 I2 = 1m TR = 5n - + W1 ION = 0uA IOFF = 1mA W I2 8 0 D2 Dbreak U1 TK8A50D Time*1mA 0 5n 10n 15n 20n 25n 30n V(W1:3) 0V 4V 8V 12V 16V 20V Gate Charge Characteristic Circuit Simulation result Evaluation circuit Simulation Result VDD=400V, ID=8A, VGS=10V Measurement Simulation Error (%) Qgs nC 6.500 6.543 0.66 Qgd nC 6.000 6.049 0.82 Qg nC 16.000 14.556 -9.03
- 8. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 8 Capacitance Characteristic Simulation Result VDS (V) Cbd (pF) Error (%) Measurement Simulation 20 95.600 95.500 -0.10 40 63.800 63.900 0.16 60 50.200 50.050 -0.30 80 42.400 42.200 -0.47 100 37.000 37.200 0.54 Simulation Measurement
- 9. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 9 Time 0.9us 1.0us 1.1us 1.2us 1 V(U1:G) 2 V(U1:D) 0V 2V 4V 6V 8V 10V 12V 1 0V 40V 80V 120V 160V 200V 240V 2 >> 0 VDD 203VdcV2 TD = 1u TF = 5n PW = 10u PER = 20u V1 = 0 TR = 5n V2 = 20 U1 TK8A50D L2 50nH R2 50 R1 50 L1 30nH RL 50 Switching Time Characteristic Circuit Simulation result Evaluation circuit Simulation Result ID=4A, VDD=200V VGS=0/10V Measurement Simulation Error (%) ton ns 40.000 41.729 4.32
- 10. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 10 V2 50 V1 0 0 V3 0Vdc U1 TK8A50D V_V2 0V 2V 4V 6V 8V 10V I(V3) 0A 2A 4A 6A 8A 10A Output Characteristic Circuit Simulation result Evaluation circuit VGS=6V 7.5 6.5 7.75 10 8 7.25 7
- 11. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 11 U1 TK8A50D VDS 0 Vsense 0Vdc V_VDS 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(Vsense) 100mA 1.0A 10A Forward Current Characteristic Circuit Simulation Result Evaluation Circuit
- 12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 12 0.1 1.0 10.0 0 0.2 0.4 0.6 0.8 1 1.2 DrainreversecurrentIDR(A) Source - Drain voltage VSD (V) Measurement Simulation Comparison Graph Circuit Simulation Result Simulation Result IDR(A) VSD(V) %Error Measurement Simulation 0.1 0.645 0.644 -0.16 0.2 0.677 0.676 -0.15 0.5 0.725 0.725 0.06 1.0 0.770 0.773 0.39 2.0 0.835 0.836 0.10 5.0 0.957 0.953 -0.44 10.0 1.085 1.086 0.09
- 13. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 13 V1 TD = 1.7us TF = 10ns PW = 10us PER = 100us V1 = -9.45v TR = 10ns V2 = 10.65v R1 50 0 U1 TK8A50D Time 8us 10us 12us 14us 16us 18us I(R1) -400mA -300mA -200mA -100mA -0mA 100mA 200mA 300mA 400mA Reverse Recovery Characteristics Circuit Simulation Result Evaluation Circuit Compare Measurement vs. Simulation Measurement Simulation Error (%) trj us 0.500 0.497 -0.60
- 14. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 14 Reverse Recovery Characteristic Reference Trj= 0.5 (us) Trb= 1.52 (us) Conditions:Ifwd=lrev=0.2(A),Rl=50 Relation between trj and trb Example Measurement