FREE SPICE MODEL of 1SS412 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: 1SS412
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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2. SPICE MODEL
*$
* P ART NUMBER: 1SS412
* M ANUF ACTURER: TOSHIB A
* All Rights Reserved Copyright ( C) Bee Technologies Inc. 2008
.SUBCKT 1SS412 1 2 3
D1 1 3 D1SS412
D2 3 2 D1SS412
.MODEL D1SS412 D
+ IS=18.216E-15
+ N=1.2640
+ RS=.41027
+ IKF=2.6752
+ CJO=2.9583E-12
+ M=.36962
+ VJ=.62677
+ BV=80
+ IBV=100.00E-12
+ TT=260.12E-9
+ ISR=0
.ENDS
*$
Circuit Configuration
(1)
(3)
(2)
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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3. DIODE MODEL PARAMETERS
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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4. Forward Current Characteristic
Circuit Simulation Result
100mA
10mA
1.0mA
100uA
10uA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc 1SS412 R2
100MEG
0
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5. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.00001 0.655 0.658 0.40
0.00002 0.682 0.680 -0.22
0.00005 0.710 0.710 0.00
0.0001 0.735 0.733 -0.29
0.0002 0.757 0.756 -0.19
0.0005 0.785 0.786 0.08
0.001 0.812 0.809 -0.41
0.002 0.831 0.832 0.09
0.005 0.861 0.863 0.22
0.01 0.889 0.888 -0.15
0.02 0.912 0.914 0.27
0.05 0.957 0.957 0.00
0.1 1.003 1.001 -0.24
0.2 1.064 1.065 0.08
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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6. Capacitance Characteristic
Circuit Simulation Result
3.5p
3.0p
2.0p
1.0p
0
100mV 1.0V 10V 50V
I(V2)/(80V/1u)
V(N11503)
Evaluation Circuit
V2
0Vdc
V1 = 0 V1
V2 = 80 U1
TD = 0 1SS412 R1
TR = 1u
TF = 50ns 100MEG
PW = 5us
PER = 10us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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7. Comparison Graph
Circuit Simulation Result
Simulation Result
Ct (pF)
Vrev (V) %Error
Measurement Simulation
0.1 2.797 2.802 0.16
0.2 2.664 2.670 0.23
0.5 2.387 2.381 -0.26
1 2.094 2.080 -0.69
2 1.767 1.744 -1.32
5 1.280 1.314 2.66
10 1.008 1.039 3.08
20 0.802 0.814 1.50
50 0.603 0.583 -3.32
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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8. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
19.4us 19.8us 20.2us 20.6us 21.0us 21.4us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9V
V2 = 11.1V
TD = 100ns V1
TR = 10ns R2
TF = 9ns U1
PER = 50us 100MEG
1SS412
PW = 20us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 92.00 91.379 -0.67
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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9. Reverse Recovery Characteristic Reference
Measurement
Trj =92(ns)
Trb= 220(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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