SPICE MODEL of 1SS193 (Standard Model) in SPICE PARK. English Version is http://www.spicepark.net.Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: DIODE/ GENERAL PURPOSE
RECTIFIER/ STANDARD MODEL
PART NUMBER: 1SS193
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
D1
D1SS193
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
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4. Forward Current Characteristics
Circuit Simulation result
1.0A
100mA
10mA
1.0mA
100uA
10uA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation circuit
R1
0.001m
V1 D1
0V D1SS193
0
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5. Comparison Graph
Circuit Simulation result
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.0001 0.489 0.489 0.11
0.0002 0.522 0.523 0.18
0.0005 0.569 0.568 -0.10
0.001 0.601 0.602 0.30
0.002 0.638 0.637 -0.10
0.005 0.684 0.684 -0.05
0.01 0.722 0.722 -0.03
0.02 0.764 0.763 -0.17
0.05 0.831 0.830 -0.09
0.1 0.901 0.901 0.04
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6. Junction Capacitance Characteristic
Circuit Simulation result
1.6p
1.2p
0.8p
0.4p
0
100mV 1.0V 10V 100V
I(V2)/(80V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 D1
V2 = 80 D1 SS1 93
TD = 0
TR = 1 us
TF = 100 ns
PW = 1 00u s
PE R = 10 m
0
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7. Comparison Graph
Circuit Simulation result
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
0.1 0.888 0.884 -0.43
0.2 0.884 0.883 -0.10
0.5 0.880 0.879 -0.15
1 0.876 0.874 -0.19
2 0.860 0.864 0.44
5 0.840 0.840 0.02
10 0.802 0.812 1.31
20 0.768 0.776 1.03
50 0.724 0.722 -0.34
80 0.702 0.692 -1.51
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8. Reverse Recovery Characteristics
Circuit Simulation result
400mA
200mA
0A
-200mA
-400mA
0.97us 0.99us 1.01us 1.03us 1.05us 1.07us
I(R1)
Time
Evaluation circuit
R1
V1 = -9.4V 50
V2 = 10.99V
TD = 0ns V1
TR = 3ns D1
TF = 2.85ns D1SS193
PW = 1us
PER = 100us
0
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 5.036 4.938 -1.95
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9. Reverse Recovery Characteristics Reference
Measurement
Trj = 5.036 (ns)
Trb = 4.087 (ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Example
Relation between trj and trb
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