SPICE MODEL of 1SS187 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ PROFESSIONAL
PART NUMBER: 1SS187
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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2. DIODE MODEL PARAMETERS
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
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3. Forward Current Characteristic
Circuit Simulation Result
1.0A
100mA
10mA
1.0mA
100uA
10uA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc U1
1SS187_P
0
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4. Comparison Graph
Circuit Simulation Result
0.1
Measurement
Simulation
Forward current IF (A)
0.01
0.001
0.0001
0.00001
0 0.2 0.4 0.6 0.8 1 1.2
Forward voltage VF (V)
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.00001 0.372 0.362 -2.57
0.00002 0.403 0.398 -1.15
0.00005 0.442 0.446 0.84
0.0001 0.476 0.482 1.21
0.0002 0.510 0.518 1.51
0.0005 0.563 0.565 0.36
0.001 0.596 0.602 0.97
0.002 0.637 0.639 0.25
0.005 0.693 0.689 -0.62
0.01 0.735 0.729 -0.82
0.02 0.780 0.773 -0.90
0.05 0.848 0.844 -0.52
0.1 0.900 0.907 0.77
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5. Capacitance Characteristic
Circuit Simulation Result
2.5p
2.0p
1.0p
0
300mV 1.0V 10V 50V
-I(X_U1.D_D1)/(80V/1u)
V(N11360)
Evaluation Circuit
V2
0Vdc
V2 = 80 V1
V1 = 0 U1
TD = 0 1SS187_P
TR = 1us
TF = 10ns
PW = 20us
PER = 10us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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6. Comparison Graph
Circuit Simulation Result
2.5
Measurement
Simulation
Junction capacitance Ct (pF)
2
1.5
1
0.5
0
0.3 3 30
Reverse Voltage VR (V)
Simulation Result
Cj (pF)
Vrev (V) %Error
Measurement Simulation
0.3 1.967 1.969 0.08
0.5 1.868 1.867 -0.07
1 1.697 1.699 0.11
2 1.518 1.513 -0.36
5 1.271 1.269 -0.19
10 1.089 1.100 0.99
20 0.945 0.949 0.42
50 0.787 0.779 -1.05
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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7. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
19.99us 20.01us 20.03us 20.05us 20.07us 20.09us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.2V V1
V2 = 11V U1
TD = 22ns 1SS187_P
TR = 5ns
TF = 8ns
PW = 20us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 7.00 6.94 -0.86
trb ns 2.40 2.38 -0.83
trr ns 9.40 9.32 -0.85
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8. Reverse Recovery Characteristic Reference
Trj =7.00(ns)
Trb= 2.40 (ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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