The document provides a modeling report for the 1SS412 diode manufactured by Toshiba. It includes detailed simulation results for forward current characteristics, capacitance characteristics, and reverse recovery characteristics, with comparisons of measurement data to simulation data. Key parameters such as saturation current and breakdown voltage are defined, and errors in measurements are quantified.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: 1SS412
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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2. DIODE MODEL PARAMETERS
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
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3. Forward Current Characteristic
Circuit Simulation Result
100mA
10mA
1.0mA
100uA
10uA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc 1SS412 R2
100MEG
0
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4. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.00001 0.655 0.658 0.40
0.00002 0.682 0.680 -0.22
0.00005 0.710 0.710 0.00
0.0001 0.735 0.733 -0.29
0.0002 0.757 0.756 -0.19
0.0005 0.785 0.786 0.08
0.001 0.812 0.809 -0.41
0.002 0.831 0.832 0.09
0.005 0.861 0.863 0.22
0.01 0.889 0.888 -0.15
0.02 0.912 0.914 0.27
0.05 0.957 0.957 0.00
0.1 1.003 1.001 -0.24
0.2 1.064 1.065 0.08
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5. Capacitance Characteristic
Circuit Simulation Result
3.5p
3.0p
2.0p
1.0p
0
100mV 1.0V 10V 50V
I(V2)/(80V/1u)
V(N11503)
Evaluation Circuit
V2
0Vdc
V1 = 0 V1
V2 = 80 U1
TD = 0 1SS412 R1
TR = 1u
TF = 50ns 100MEG
PW = 5us
PER = 10us
0
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6. Comparison Graph
Circuit Simulation Result
Simulation Result
Ct (pF)
Vrev (V) %Error
Measurement Simulation
0.1 2.797 2.802 0.16
0.2 2.664 2.670 0.23
0.5 2.387 2.381 -0.26
1 2.094 2.080 -0.69
2 1.767 1.744 -1.32
5 1.280 1.314 2.66
10 1.008 1.039 3.08
20 0.802 0.814 1.50
50 0.603 0.583 -3.32
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7. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
19.4us 19.8us 20.2us 20.6us 21.0us 21.4us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9V
V2 = 11.1V
TD = 100ns V1
TR = 10ns R2
TF = 9ns U1
PER = 50us 100MEG
1SS412
PW = 20us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 92.00 91.379 -0.67
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8. Reverse Recovery Characteristic Reference
Measurement
Trj =92(ns)
Trb= 220(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Example
Relation between trj and trb
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