The document details the device modeling report for the diode rectifier model 1SS184 produced by Toshiba Bee Technologies, focusing on key parameters and characteristics including forward current, junction capacitance, and reverse recovery. Simulation results are compared against measurements, revealing a high degree of accuracy with minor percentage errors. The report includes various circuit configurations and simulation data relevant to the diode's performance.

1. Device Modeling Report
COMPONENTS: DIODE/ GENERAL PURPOSE
RECTIFIER/ STANDARD MODEL
PART NUMBER: 1SS184
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
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2. Circuit Configuration
D1
D1SS184
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
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4. Forward Current Characteristics
Circuit Simulation result
1.0A
100mA
10mA
1.0mA
100uA
10uA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation circuit
R1
0.001m
V1
0V D1
D1SS184
0
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5. Comparison Graph
Circuit Simulation result
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.0001 0.493 0.492 -0.09
0.0002 0.528 0.526 -0.40
0.0005 0.571 0.571 0.09
0.001 0.607 0.605 -0.35
0.002 0.641 0.640 -0.25
0.005 0.685 0.686 0.23
0.01 0.724 0.724 0.06
0.02 0.765 0.766 0.13
0.05 0.833 0.834 0.17
0.1 0.909 0.908 -0.08
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6. Junction Capacitance Characteristic
Circuit Simulation result
2.0p
1.6p
1.2p
0.8p
0.4p
0
100mV 1.0V 10V 100V
I(V2)/(85V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 D1
V2 = 85 D1SS184
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
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7. Comparison Graph
Circuit Simulation result
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
0.1 0.902 0.898 -0.51
0.2 0.898 0.896 -0.17
0.5 0.889 0.892 0.34
1 0.884 0.884 -0.03
2 0.867 0.873 0.70
5 0.844 0.847 0.31
10 0.818 0.817 -0.15
20 0.784 0.781 -0.46
50 0.733 0.727 -0.81
80 0.693 0.700 1.01
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8. Reverse Recovery Characteristics
Circuit Simulation result
400mA
200mA
0A
-200mA
-400mA
0.96us 0.98us 1.00us 1.02us 1.04us 1.06us
I(R1)
Time
Evaluation circuit
R1
V1 = -9.4V 50
V2 = 10.99V
TD = 0ns V1
TR = 3ns D1
TF = 2.85ns D1SS184
PW = 1us
PER = 100us
0
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 8.640 8.643 0.03
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9. Reverse Recovery Characteristics Reference
Measurement
Trj = 8.64(ns)
Trb = 5.28(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Example
Relation between trj and trb
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