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Device Modeling Report



COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: SF10LC40
MANUFACTURER: SHINDENGEN




                   Bee Technologies Inc.

     All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                -1-
DIODE MODEL PARAMETERS

PSpice model
                                    Model description
 parameter
     IS        Saturation Current
     N         Emission Coefficient
     RS        Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




           All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                      -2-
Forward Current Characteristic

Circuit Simulation Result

           40A




           10A




          1.0A




         100mA
              0V            0.4V        0.8V          1.2V    1.6V       2.0V     2.4V
                   I(R1)
                                                      V_V1
Evaluation Circuit

                                R1

                                0.01m
                                                   U1
                                                   SF10LC40

                           V1
                   0Vdc                                        R2
                                                               100MEG




                                               0




Comparison Graph
                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                                   -3-
Circuit Simulation Result




Simulation Result

                                          Vfwd (V)
             Ifwd (A)                                                   %Error
                            Measurement            Simulation
                     0.1           0.685                  0.676                 -1.31
                     0.2           0.724                  0.732                  1.10
                     0.5           0.812                  0.812                  0.00
                       1           0.879                  0.881                  0.23
                       2           0.976                  0.966                 -1.02
                       5           1.117                  1.124                  0.63
                      10           1.302                  1.306                  0.31
                      20           1.589                  1.579                 -0.63




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                            -4-
Capacitance Characteristic

Circuit Simulation Result

         200p




         100p




          10p
            1.0V                                        10V                     100V
                I(V2)/(400V/1u)
                                                    V(N11360)

Evaluation Circuit

                                   V2


                                            0Vdc


                 V2 = 400     V1
                 V1 = 0
                 TD = 0                                         R1
                 TR = 1us                                        10MEG
                 TF = 10ns
                 PW = 20us                         U1
                 PER = 10us                        SF10LC40




                                        0




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                                    -5-
Comparison Graph

Circuit Simulation Result




Simulation Result

                                      Cj (pF)
              Vrev (V)                                                 %Error
                            Measurement     Simulation
                       1          84.231         84.367                      0.16
                       2          68.537         68.482                     -0.08
                       5          49.954         49.494                     -0.92
                      10          37.314           37.81                     1.33
                      20          28.411         28.633                      0.78
                      50          19.421         19.614                      0.99
                     100          14.327         14.706                      2.65




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                            -6-
Reverse Recovery Characteristic

Circuit Simulation Result

                 400mA


                 300mA


                 200mA


                 100mA


                 -0mA


            -100mA


            -200mA


            -300mA


            -400mA
               19.88us             19.96us    20.04us          20.12us       20.20us    20.28us
                    I(R1)
                                                        Time
Evaluation Circuit

                                             R1

                                             50

                                                               U1
                                                               SF10LC40
                          V1 = -9.4V   V1
                          V2 = 10.7V                                         R2
                          TD = 30ns                                          10MEG
                          TR = 5ns
                          TF = 10ns
                          PW = 20us
                          PER = 50us




                                                               0



Compare Measurement vs. Simulation

                                 Measurement               Simulation                  %Error
           trj           ns                  18.00                        17.94             -0.33




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                                  -7-
Reverse Recovery Characteristic                                        Reference




Trj =18.00(ns)
Trb= 22.4(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50




                                                          Example




                               Relation between trj and trb




                All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                           -8-

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SPICE MODEL of SF10LC40 (Standard Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD PART NUMBER: SF10LC40 MANUFACTURER: SHINDENGEN Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -1-
  • 2. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -2-
  • 3. Forward Current Characteristic Circuit Simulation Result 40A 10A 1.0A 100mA 0V 0.4V 0.8V 1.2V 1.6V 2.0V 2.4V I(R1) V_V1 Evaluation Circuit R1 0.01m U1 SF10LC40 V1 0Vdc R2 100MEG 0 Comparison Graph All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -3-
  • 4. Circuit Simulation Result Simulation Result Vfwd (V) Ifwd (A) %Error Measurement Simulation 0.1 0.685 0.676 -1.31 0.2 0.724 0.732 1.10 0.5 0.812 0.812 0.00 1 0.879 0.881 0.23 2 0.976 0.966 -1.02 5 1.117 1.124 0.63 10 1.302 1.306 0.31 20 1.589 1.579 -0.63 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -4-
  • 5. Capacitance Characteristic Circuit Simulation Result 200p 100p 10p 1.0V 10V 100V I(V2)/(400V/1u) V(N11360) Evaluation Circuit V2 0Vdc V2 = 400 V1 V1 = 0 TD = 0 R1 TR = 1us 10MEG TF = 10ns PW = 20us U1 PER = 10us SF10LC40 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -5-
  • 6. Comparison Graph Circuit Simulation Result Simulation Result Cj (pF) Vrev (V) %Error Measurement Simulation 1 84.231 84.367 0.16 2 68.537 68.482 -0.08 5 49.954 49.494 -0.92 10 37.314 37.81 1.33 20 28.411 28.633 0.78 50 19.421 19.614 0.99 100 14.327 14.706 2.65 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -6-
  • 7. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 19.88us 19.96us 20.04us 20.12us 20.20us 20.28us I(R1) Time Evaluation Circuit R1 50 U1 SF10LC40 V1 = -9.4V V1 V2 = 10.7V R2 TD = 30ns 10MEG TR = 5ns TF = 10ns PW = 20us PER = 50us 0 Compare Measurement vs. Simulation Measurement Simulation %Error trj ns 18.00 17.94 -0.33 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -7-
  • 8. Reverse Recovery Characteristic Reference Trj =18.00(ns) Trb= 22.4(ns) Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -8-