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Device Modeling Report




COMPONENTS: DIODE/ GENERAL PURPOSE
RECTIFIER/ STANDARD MODEL
PART NUMBER: 1SS184
MANUFACTURER: TOSHIBA




                Bee Technologies Inc.




   All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                  1
Circuit Configuration


          D1
          D1SS184




             All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                            2
DIODE MODEL PARAMETERS
  PSpice
   model                                Model description
 parameter
     IS         Saturation Current
     N          Emission Coefficient
     RS         Series Resistance
    IKF         High-injection Knee Current
    CJO         Zero-bias Junction Capacitance
     M          Junction Grading Coefficient
     VJ         Junction Potential
    ISR         Recombination Current Saturation Value
     BV         Reverse Breakdown Voltage(a positive value)
    IBV         Reverse Breakdown Current(a positive value)
     TT         Transit Time
    EG          Energy-band Gap




             All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                            3
Forward Current Characteristics

Circuit Simulation result



               1.0A




              100mA




               10mA




              1.0mA




              100uA




               10uA
                      0V           0.2V    0.4V       0.6V      0.8V      1.0V       1.2V
                           I(R1)
                                                      V_V1



Evaluation circuit

                                              R1


                                             0.001m

                                      V1
                            0V                                      D1
                                                                    D1SS184




                                      0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                            4
Comparison Graph

Circuit Simulation result




Comparison table


                                             VF (V)
               IF (A)                                                       %Error
                               Measurement            Simulation
                   0.0001                0.493                 0.492              -0.09
                   0.0002                0.528                 0.526              -0.40
                   0.0005                0.571                 0.571              0.09
                    0.001                0.607                 0.605              -0.35
                    0.002                0.641                 0.640              -0.25
                    0.005                0.685                 0.686              0.23
                        0.01             0.724                 0.724              0.06
                        0.02             0.765                 0.766              0.13
                        0.05             0.833                 0.834              0.17
                         0.1             0.909                 0.908              -0.08




                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                          5
Junction Capacitance Characteristic

Circuit Simulation result



              2.0p




              1.6p




              1.2p




              0.8p




              0.4p




                  0
                 100mV             1.0V                       10V             100V
                     I(V2)/(85V/1u)
                                                       V(R)



Evaluation circuit

                                                  V2

                                          R

                                                   0


                             V1 = 0       V1                        D1
                             V2 = 85                                D1SS184
                             TD = 0
                             TR = 1us
                             TF = 100ns
                             PW = 100us
                             PER = 10m


                                              0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                     6
Comparison Graph

Circuit Simulation result




Comparison table


                                             C (pF)
              VR (V)                                                        %Error
                                Measurement           Simulation
                       0.1               0.902                 0.898              -0.51
                       0.2               0.898                 0.896              -0.17
                       0.5               0.889                 0.892              0.34
                            1            0.884                 0.884              -0.03
                            2            0.867                 0.873              0.70
                            5            0.844                 0.847              0.31
                       10                0.818                 0.817              -0.15
                       20                0.784                 0.781              -0.46
                       50                0.733                 0.727              -0.81
                       80                0.693                 0.700              1.01




                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                          7
Reverse Recovery Characteristics

Circuit Simulation result

                      400mA




                      200mA




                         0A




                     -200mA




                     -400mA
                         0.96us     0.98us        1.00us          1.02us      1.04us 1.06us
                              I(R1)
                                                           Time



Evaluation circuit

                                                    R1



                               V1 = -9.4V           50
                               V2 = 10.99V
                               TD = 0ns      V1
                               TR = 3ns                                    D1
                               TF = 2.85ns                                 D1SS184
                               PW = 1us
                               PER = 100us




                                             0



    Comparison Measurement vs. Simulation
       Parameter          Unit        Measurement                 Simulation           %Error
             trj              ns                  8.640                     8.643             0.03




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                                     8
Reverse Recovery Characteristics                                                Reference




                                                     Measurement




Trj = 8.64(ns)
Trb = 5.28(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50




                                                        Example




                               Relation between trj and trb




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                        9

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SPICE MODEL of 1SS184 (Standard Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD MODEL PART NUMBER: 1SS184 MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
  • 2. Circuit Configuration D1 D1SS184 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
  • 3. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
  • 4. Forward Current Characteristics Circuit Simulation result 1.0A 100mA 10mA 1.0mA 100uA 10uA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(R1) V_V1 Evaluation circuit R1 0.001m V1 0V D1 D1SS184 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
  • 5. Comparison Graph Circuit Simulation result Comparison table VF (V) IF (A) %Error Measurement Simulation 0.0001 0.493 0.492 -0.09 0.0002 0.528 0.526 -0.40 0.0005 0.571 0.571 0.09 0.001 0.607 0.605 -0.35 0.002 0.641 0.640 -0.25 0.005 0.685 0.686 0.23 0.01 0.724 0.724 0.06 0.02 0.765 0.766 0.13 0.05 0.833 0.834 0.17 0.1 0.909 0.908 -0.08 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
  • 6. Junction Capacitance Characteristic Circuit Simulation result 2.0p 1.6p 1.2p 0.8p 0.4p 0 100mV 1.0V 10V 100V I(V2)/(85V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 D1 V2 = 85 D1SS184 TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
  • 7. Comparison Graph Circuit Simulation result Comparison table C (pF) VR (V) %Error Measurement Simulation 0.1 0.902 0.898 -0.51 0.2 0.898 0.896 -0.17 0.5 0.889 0.892 0.34 1 0.884 0.884 -0.03 2 0.867 0.873 0.70 5 0.844 0.847 0.31 10 0.818 0.817 -0.15 20 0.784 0.781 -0.46 50 0.733 0.727 -0.81 80 0.693 0.700 1.01 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
  • 8. Reverse Recovery Characteristics Circuit Simulation result 400mA 200mA 0A -200mA -400mA 0.96us 0.98us 1.00us 1.02us 1.04us 1.06us I(R1) Time Evaluation circuit R1 V1 = -9.4V 50 V2 = 10.99V TD = 0ns V1 TR = 3ns D1 TF = 2.85ns D1SS184 PW = 1us PER = 100us 0 Comparison Measurement vs. Simulation Parameter Unit Measurement Simulation %Error trj ns 8.640 8.643 0.03 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
  • 9. Reverse Recovery Characteristics Reference Measurement Trj = 8.64(ns) Trb = 5.28(ns) Conditions: Ifwd = lrev = 0.2(A), Rl = 50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9